Journal of Materiomics最新文献

{"title":"Superior energy-storage density and ultrahigh efficiency in KNN-based ferroelectric ceramics via high-entropy design","authors":"","doi":"10.1016/j.jmat.2024.03.007","DOIUrl":"10.1016/j.jmat.2024.03.007","url":null,"abstract":"<div><p>The rapidly advancing energy storage performance of dielectric ceramics capacitors have garnered significant interest for applications in fast charge/discharge and high-power electronic techniques. Simultaneously improving the recoverable energy storage density <em>W</em>_rec and efficiency <em>η</em> becomes more prominent at the present time for their practical applications. Herein, a high-entropy concept is implemented on the (K_0·5Na_0.5)NbO₃ (KNN)-based ferroelectric ceramics to design the high-performance dielectric capacitors. First, the strong lattice distortion can absorb some electric energy during the electrical loading process and result in the delayed polarization saturation. Additionally, the large composition fluctuations induce the weak correlation between polar nanoregions and enhance the <em>η</em>. Finally, the high-entropy design and viscous polymer processing method reduce the grain size and improve the <em>E</em>_b. In consequence, excellent <em>W</em>_rec of 11.14 J/cm³ with high <em>η</em> of 87.1% are achieved under an electric field of 750 kV/cm in the high-entropy component. These results demonstrate that the high-entropy concept is a potential avenue to design the KNN-based high-performance dielectric energy storage capacitors.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100862"},"PeriodicalIF":8.4,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000674/pdfft?md5=c80ad82633823ed2c27d851549a9e9e1&pid=1-s2.0-S2352847824000674-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140771770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel properties of vacancy-ordered perovskite-Cs2BCl6 induced by d-orbital electrons","authors":"","doi":"10.1016/j.jmat.2024.03.006","DOIUrl":"10.1016/j.jmat.2024.03.006","url":null,"abstract":"<div><p>The all-inorganic lead-free vacancy-ordered perovskite offers a promising avenue toward nontoxic and stable optoelectronic materials. Herein, we present a first-principles study of the structural stability, optical absorption, electronic structure, and mechanical behavior of Cs₂BCl₆ compounds with B-site substitutions (B<img>Ge, Sn, Pb, Cr, Mo, W, Ti, Zr, and Hf). The structural analysis shows that the Cs₂BCl₆ perovskite with face-centered cubes has a stable chemical environment, especially Cs₂HfCl₆, Cs₂WCl₆, and Cs₂PbCl₆. Hf⁴⁺ and W⁴⁺ with high-energy d-state external electron configurations can further lower the valence band maximum position of the Cs₂BCl₆ structures and thus increase the band gap, assisting in tuning the optical absorption and emission properties of these structures in the optoelectronic application. For the light absorption properties of Cs₂BCl₆ materials, the best light absorption properties have been concluded for Ti⁴⁺, Cr⁴⁺, and Pb⁴⁺-based perovskite in the visible range due to a suitable band gap. Therefore, the excellent optical absorption and electronic properties make these vacancy-ordered perovskites promising candidates for optoelectronic applications.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100861"},"PeriodicalIF":8.4,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000662/pdfft?md5=e9a9c7dfc7d06f5558e21a92837aba7f&pid=1-s2.0-S2352847824000662-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140770135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal stability optimization of single-leg skutterudite-based thermoelectric devices based on lattice distortion effects","authors":"","doi":"10.1016/j.jmat.2024.02.015","DOIUrl":"10.1016/j.jmat.2024.02.015","url":null,"abstract":"<div><div>Skutterudite-based (SKD-based) thermoelectric materials are well-known for their high figure-of-merit (<em>zT</em> value) in the intermediate temperature region. Based on the urgent need for long-term high-temperature service, the poor interfacial thermal stability when connected with the Cu electrodes has greatly limited its industrial application. In this work, we propose a novel alloying route for the barrier layers for p-type SKDs. A Fe₈₀Cr_17.5Mo_2.5₀/p-SKD junction with matched coefficients of thermal expansion (CTE), high mechanical reliability, and low contact resistivity is obtained. The addition of large-scale Mo causes severe lattice distortion in the barrier alloy, which contributes to the sluggish elemental diffusion. Thus, after aging at 823 K for 600 h, the Fe₈₀Cr_17.5Mo_2.5 junction has a thinner reaction layer (∼25 μm), lower contact resistivity (∼3.8 μΩ·cm²), and higher shear strength (∼14 MPa), compared with the Mo-free (Fe₈₀Cr₂₀) barrier junction. Our finding opens a new insight for fabricating long-term high thermally stable SKD-based thermoelectric devices with desirable mechanical stability.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100859"},"PeriodicalIF":8.4,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000649/pdfft?md5=2669c71b2cacd9ab3748b570af89bb7e&pid=1-s2.0-S2352847824000649-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140759149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear optical response of thermally stable perovskite for near-infrared optical modulator","authors":"","doi":"10.1016/j.jmat.2024.03.004","DOIUrl":"10.1016/j.jmat.2024.03.004","url":null,"abstract":"<div><p>Metal halide perovskite has generated significant attention due to its high optical absorption coefficient, the tunability of bandgap, and its solution processing properties, all of which have led to a range of applications including solar cells, photodetectors, light-emitting diodes and lasers. However, the material's application as an optical modulator for high-energy ultrafast lasers is still limited by its slow nonlinear optical response, low damage threshold and the inferior stability. Herein, we developed a saturable absorber (SA) with the thermally stable Cs_0.15FA_0.85PbI_2.85Br_0.15 perovskite thin films as an optical modulator towards the near-infrared nanosecond passively Q-switched Nd:YAG laser generation for the first time. The Cs_0.15FA_0.85PbI_2.85Br_0.15 perovskite SA optical modulator produced an exceptional nonlinear optical response with a notable modulation depth of 15.1%, an ultrashort recovery time of 52.46 ps, and a high optical damage threshold exceeding 275.9 mJ/cm². Of further significance, it displayed an excellent operational stability, and when incorporated into the oscillator of the Nd:YAG laser, allowed for a stable operation of 166 ns pulse laser with a center wavelength of 1.06 μm. The findings provide a pathway for the employment of the Cs_0.15FA_0.85PbI_2.85Br_0.15 perovskite SA optical modulator in near-infrared ultrafast laser applications.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100858"},"PeriodicalIF":8.4,"publicationDate":"2024-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000637/pdfft?md5=455780b2d47b54443dd98d5f55ebf1a9&pid=1-s2.0-S2352847824000637-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140782179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-volatile voltage-controlled magnetization in single-phase multiferroic ceramics at room temperature","authors":"","doi":"10.1016/j.jmat.2024.03.003","DOIUrl":"10.1016/j.jmat.2024.03.003","url":null,"abstract":"<div><p>Single-phase multiferroics (MFs) exhibiting ferroelectricity and ferromagnetism and the strong magnetoelectric (ME) coupling effect at room temperature are seen as key to the development of the next-generation of spintronic devices, multi-state memories, logic devices and sensors. Herein, the single-tetragonal phase (1–<em>x</em>) (Sr_0·3Bi_0·35Na_0·329Li_0.021)TiO₃-<em>x</em>BiFeO₃ (<em>x</em> = 0.2 or 0.4) system was designed to study the intrinsic ME coupling effect at room temperature and high frequencies. The polarization arises from the cooperative displacement of both Fe³⁺ and Ti⁴⁺ relative to the oxygen sublattice in the tetragonally distorted perovskite structure, and the magnetization stems from indirect exchange magnetic interaction between adjacent iron ions. A switchable voltage-controlled magnetization was confirmed by a change of the coercive magnetic field, <em>H</em>_c, and remnant magnetization, <em>M</em>_r, in the <em>x</em> = 0.4 component subjected to an external electric field at room temperature and was possibly attributed to a strain-mediated ME coupling effect. In addition, resonance behaviours of the complex magnetic permeability and complex dielectric permittivity in the GHz band indicate that this ME effect is intrinsic in nature and could broaden the applications of multiferroics to devices operating at microwave frequencies.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100857"},"PeriodicalIF":8.4,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000625/pdfft?md5=5a438273da063b387e67d1140317d329&pid=1-s2.0-S2352847824000625-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of the average figure-of-merit zT in medium-entropy GeTe-based materials via entropy engineering","authors":"Xusheng Liu ,&nbsp;Keli Wang ,&nbsp;Peng Li ,&nbsp;Qiqi Tang ,&nbsp;Zhenlong Huang ,&nbsp;Yuan Lin ,&nbsp;Wu Wang ,&nbsp;Binbin Jiang ,&nbsp;Jiaqing He","doi":"10.1016/j.jmat.2024.02.014","DOIUrl":"10.1016/j.jmat.2024.02.014","url":null,"abstract":"<div><p>Entropy engineering has emerged as an effective strategy for improving the figure-of-merit <em>zT</em> by decelerating the phonon transport while maintaining good electrical transport properties of thermoelectric materials. Herein, a high average <em>zT</em> of 1.54 and a maximum <em>zT</em> of 2.1 are achieved in the mid-entropy GeTe constructed by Ag, Sb, and Pb alloying. At room temperature, the mid-entropy GeTe tends to be a cubic structure. And the power factor is improved from 7.7 μW·cm⁻¹·K⁻² to 16.2 μW·cm⁻¹·K⁻² due to the large increase in effective mass and the optimized carrier concentration. The increasing disorder created by heavy and off-centering Ag, Sb, and Pb atoms induces strong mass/strain fluctuations and phonon scattering to decelerate the phonon transport in GeTe. A low lattice thermal conductivity is obtained in the medium-entropy GeTe-based material. Moreover, a GeTe-based thermoelectric cooler is fabricated with the cooling temperature difference of 66.6 K with the hot end fixed at 363 K. This work reveals the effectiveness of entropy engineering in improving the average <em>zT</em> in GeTe and shows potential application of GeTe as a thermoelectric cooler.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"10 4","pages":"Pages 956-963"},"PeriodicalIF":9.4,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000601/pdfft?md5=98c291d988e5928c262828b81c78df4e&pid=1-s2.0-S2352847824000601-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140401726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Frictional heat-assisted performance enhancement in dynamic Schottky contact of Al/Ag2Se-based tribovoltaic nanogenerator","authors":"","doi":"10.1016/j.jmat.2024.02.013","DOIUrl":"10.1016/j.jmat.2024.02.013","url":null,"abstract":"<div><p>The tribovoltaic nanogenerator (TVNG) has evolved in recent years as a novel type of nanogenerator designed to address the limitations of the standard triboelectric nanogenerator in terms of output signal and charge generation. Besides the outstanding characteristics, the tribovoltaic effect can also well be coupled with another effect to further boost the output performance. In this work, we proposed firstly a frictional heat-assisted performance enhancement in dynamic Schottky contact from the rubbing between n-type silver selenide (Ag₂Se) and aluminum. The chemical composition and physical characteristics of the Ag₂Se ceramic were analyzed using X-ray diffraction, scanning electron microscopy, and Synchrotron X-ray tomography techniques. UV–Vis spectroscopy and UPS were also utilized in order to validate the semiconducting property of the n-type Ag₂Se ceramic. Moreover, the presence of the Schottky junction was demonstrated through the analysis of the current-bias voltage characteristic curve of the Ag₂Se/aluminum (Al) contact under varying stress and temperature conditions. The built-in electric field plays a crucial part in the tribovoltaic effect by efficiently transferring the excited carriers to an external load through sliding contact between Ag₂Se and Al. Demonstrating the synergy between tribovoltaic and thermoelectric effects becomes achievable through the excellent thermoelectric property of Ag₂Se. Herein, the proposed TVNG generated a peak output voltage and current of around 0.7 V and 24.8 nA, respectively, achieving a maximum output power of 12.6 nW at a load resistance of 10 kΩ. The influence of frictional heat on the output performance of the proposed TVNG was well demonstrated by the thermal-induced voltage and enhanced electrical output from continuous sliding. The concepts given in this study establish the basis for the progress of effective energy collection employing semiconducting materials and the advancement of flexible harvesting and sensing device development in the future.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100854"},"PeriodicalIF":8.4,"publicationDate":"2024-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000595/pdfft?md5=e606500d55d737d5071efe68f4f1b1f1&pid=1-s2.0-S2352847824000595-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140398442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-flexible TiO2/SiO2 nanofiber membranes with layered structure for thermal insulation","authors":"","doi":"10.1016/j.jmat.2024.03.002","DOIUrl":"10.1016/j.jmat.2024.03.002","url":null,"abstract":"<div><p>High-performance thermally insulating ceramic materials with excellent mechanical and thermal insulation properties are essential for thermal management in extreme environments. In this work, SiO₂ was introduced into the crystalline lattice and grain boundary of TiO₂ to inhibit its phase transition and grain growth. Meanwhile, layered TiO₂/SiO₂ nanofiber membranes (TS NFMs) were designed and prepared. The TS NFMs had lightweight (44 mg/cm³), high tensile strength (4.55 MPa), ultra-flexibility, and low thermal conductivity (31.5 mW∙m⁻¹·K⁻¹). The prepared TS-1100 NFMs had excellent buckling fatigue resistance, which could undergo 100 buckling-recovery cycles at up to 80% strain. Low density and high diffuse reflectance endow the TS NFMs with excellent thermal insulation effects. A single-layer nanofiber membrane was composed of multiple layers of nanofibers. According to the principle of multi-level reflection, the multilayer structure had a better near-infrared reflection effect. Through the stacking effect of layers, a 10 mm thick sample composed of about 300 layers of nanofiber membranes could reduce the hot surface temperature from 1,200 °C to about 220 °C, demonstrating an excellent comprehensive thermal insulation effect. The layered TS NFMs with ultra-flexibility, high tensile strength and high-temperature resistance (1,100 °C) provide a dominant pathway in producing materials in extremely high-temperature environments.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100856"},"PeriodicalIF":8.4,"publicationDate":"2024-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000613/pdfft?md5=ca8e1ac4d5ca455db7c6a3c8326deb29&pid=1-s2.0-S2352847824000613-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140404896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suppressing interfacial polarization via entropy increase strategy for superior energy-storage performance of Na0.5Bi0.5TiO3-based ceramics","authors":"Hanyu Zhao,&nbsp;Wenjun Cao,&nbsp;Donghao Han,&nbsp;Xiyue Zhu,&nbsp;Cen Liang,&nbsp;Changyuan Wang,&nbsp;Chunchang Wang","doi":"10.1016/j.jmat.2024.02.011","DOIUrl":"10.1016/j.jmat.2024.02.011","url":null,"abstract":"<div><p>High entropy engineering has emerged as a new strategy to improve the energy storage density and efficiency of dielectric capacitors due to its unique design concept. However, the recyclable energy storage density (<em>W</em>_rec) reported so far has never exceeded 2 J/cm³ for the type of high-entropy ceramics with equimolar elements occupying A or B site. In order to improve this type high-entropy ceramics. Na_0.5Bi_0.5TiO₃ (NBT) was used as the matrix, equimolar Sr²⁺, La³⁺, K⁺ and Ba²⁺ were gradually introduced into at the A-site of the matrix lattice to increase configurational entropy. The results show that the relaxor degree, band gap width, interfacial polarization, and breakdown field strength are effectively improved with increasing entropy. Among them, suppressing interfacial polarization is an important factor to increase the breakdown field strength and thus enhance the energy storage performance. The (Na_1/6Bi_1/6Sr_1/6La_1/6K_1/6Ba_1/6)TiO₃ (NBSLKBT) sample with the highest configurational entropy shows an ultra-high <em>W</em>_rec of 9.8 J/cm³ and the energy storage efficiency (<em>η</em> = 86.5%). This work demonstrates that entropy strategy for superior energy-storage performance still works on the above type high-entropy ceramics and opens up a new way of modulating interface polarization by entropy increase strategy.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"10 4","pages":"Pages 947-955"},"PeriodicalIF":9.4,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000455/pdfft?md5=1639d5c3a7807858eabe9302d34f4715&pid=1-s2.0-S2352847824000455-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140572585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress on two-dimensional van der Waals thermoelectric materials with plasticity","authors":"","doi":"10.1016/j.jmat.2024.02.010","DOIUrl":"10.1016/j.jmat.2024.02.010","url":null,"abstract":"<div><p>Lots of research on thermoelectric materials (TEs) has focused on improving their thermoelectric (TE) properties to achieve efficient energy conversion. However, the mechanical properties of materials are also the object of concern in practical applications. Nowadays, the field of electronic devices is obviously developing in the direction of flexible electronics, so the research on TEs should also consider the plasticity. Since 2018, it has been discovered that inorganic semiconductor materials have the ability of plastic deformation, giving new possibilities for the development of TEs with plasticity. This paper focuses on the TEs with two-dimensional van der Waals (2D vdW) crystal structures, which have good plasticity but low TE properties. However, these materials have the potential to become excellent materials with TE properties and good plasticity through optimization strategies. In this paper, the latest research progress of 2D vdW TE materials and their applications in electronic devices are reviewed. The plasticity and TE properties of 2D vdW materials with M₂X, MX and MX₂ structure are summarized, and their plasticity mechanisms are discussed. We also introduce the application of high throughput screening in the discovery of novel 2D vdW plastic materials, and outline the future research work of 2D vdW TE materials.</p></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100850"},"PeriodicalIF":8.4,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000443/pdfft?md5=776ce7708224f969fc0665074e24a5b9&pid=1-s2.0-S2352847824000443-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140146217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}