Journal of Materiomics最新文献_第8页

High entropy engineering boosts thermo-mechanical properties of rare-earth tantalates: Influences of cocktail effects 高熵工程提高稀土钽酸盐热机械性能：鸡尾酒效应的影响

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-29 DOI: 10.1016/j.jmat.2024.100984

Luyang Zhang , Lin Chen , Jiankun Wang , Yuxuan Zhang , Yanhui Chu , Jing Feng

{"title":"High entropy engineering boosts thermo-mechanical properties of rare-earth tantalates: Influences of cocktail effects","authors":"Luyang Zhang , Lin Chen , Jiankun Wang , Yuxuan Zhang , Yanhui Chu , Jing Feng","doi":"10.1016/j.jmat.2024.100984","DOIUrl":"10.1016/j.jmat.2024.100984","url":null,"abstract":"<div><div>High entropy engineering has been widely used to optimize properties of various materials, and we improve comprehensive performance of rare-earth tantalates RETaO4 (RE is rare earth) by changing configurational entropy in this work. Four medium/high entropy RETaO4 (M/HERT) are successfully prepared, and the variations of disorders and distortion degree of lattices with the increasing configurational entropy are described in detail. It is revealed that M/HERT with the highest configurational entropy does not correspond to the best comprehensive properties. Unexpected variations in properties of M/HERT compared to RETaO4 are observed. By comparing with values obtained from rule of mixture (ROM), it is believed that the cocktail effect exists in M/HERT. The synergistic optimizations of thermo-mechanical properties are realized, including reducing thermal conductivity, increasing thermal expansion coefficients (TECs), and enhancing mechanical properties. M/HERT exhibit excellent high temperature stability and provide a good thermal insulation gradient, which is significant for high-temperature applications of RETaO4. This work serves as an important part for thermal barrier coatings materials with high working temperatures and low thermal conductivity.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100984"},"PeriodicalIF":8.4,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD （001）原位脉冲Al原子辅助MOCVD法制备β-Ga2O3同外延层

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-29 DOI: 10.1016/j.jmat.2024.100981

Yunlong He , Yang Liu , Xiaoli Lu , Zhan Wang , Xianqiang Song , Ying Zhou , Xuefeng Zheng , Xiaohua Ma , Yue Hao

{"title":"(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD","authors":"Yunlong He , Yang Liu , Xiaoli Lu , Zhan Wang , Xianqiang Song , Ying Zhou , Xuefeng Zheng , Xiaohua Ma , Yue Hao","doi":"10.1016/j.jmat.2024.100981","DOIUrl":"10.1016/j.jmat.2024.100981","url":null,"abstract":"<div><div>In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed. Compared to films grown by conventional growth methods, the β-Ga2O3 epitaxial film grown using this method exhibited lower RMS roughness and a smaller FWHM of the (002) peak in the X-ray rocking curve. Additionally, oxygen vacancy defects within the film are significantly reduced, and Al incorporation is relatively limited without inducing lattice distortion. The width of serrations at the substrate-epitaxial layer interface is reduced from 70 nm to 17 nm, demonstrating improved interface flatness. The mechanism of pulsed Al atoms in optimizing homoepitaxial growth of (001) β-Ga2O3 is proposed, including their roles as preferential nucleation sites for Ga atoms, their inhibitory effects on Ga2O formation and desorption, and the enhancement of atomic diffusion while minimizing parasitic side reactions. The phenomenon of epitaxial orientation rotation is observed, and a hypothesis is proposed regarding the causes of the difference in rotation angle and surface flatness. Additionally, Schottky barrier diodes (SBDs) are also fabricated to study the electrical properties of these epitaxial materials. The epitaxial layer obtained through the pulsed Al atom assisted growth method exhibited a breakdown field strength of 1.8 MV/cm. These results demonstrate that the pulsed Al atom assisted growth method may serve as a valuable reference for achieving high-quality (001) β-Ga2O3 epitaxial growth by the MOCVD method.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100981"},"PeriodicalIF":8.4,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic effects lead to high thermoelectric performance of iodine doped pseudo-binary layered GeSb2Te4 协同效应使掺碘伪二元层状 GeSb2Te4 具有高热电性能

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-22 DOI: 10.1016/j.jmat.2024.100973

Yongjin Chen , Hong Wu , Guang Han , Bin Zhang , Xu Lu , Wenge Yang , Guoyu Wang , Xiaodong Han , Xiaoyuan Zhou

{"title":"Synergistic effects lead to high thermoelectric performance of iodine doped pseudo-binary layered GeSb2Te4","authors":"Yongjin Chen , Hong Wu , Guang Han , Bin Zhang , Xu Lu , Wenge Yang , Guoyu Wang , Xiaodong Han , Xiaoyuan Zhou","doi":"10.1016/j.jmat.2024.100973","DOIUrl":"10.1016/j.jmat.2024.100973","url":null,"abstract":"<div><div>Pseudo-binary layered compound ⅣVI-V2VI3 families show great promise for application in thermoelectrics. Herein, through introducing iodine in GeSb2Te4, several synergistic effects come into being and contribute to outstanding thermoelectric performance. The ITe donor-like defects suppress the hole carrier concentration from 5.72 × 1020 cm−3 to 2.80 × 1020 cm−3. First-principles calculations reveal that iodine doping increases the band gap from 0.253 eV to 0.302 eV and contributes to valence band convergence. Seebeck coefficient value reaches up to 135.7 μV/K at 773 K, and the power factor values are entirely boosted in the whole temperature region, reaching a maximum value of 12.4 μW⸱cm−1⸱K−2 in GeSb2Te3.96I0.04. Moreover, iodine doping simultaneously reduces the lattice and electronic thermal conductivity, leading to the greatly reduced total thermal conductivity from 2.89 W⸱m−1⸱K−1 in pristine sample to 0.89 W⸱m−1⸱K−1 in GeSb2Te3.84I0.16 at 323 K. Finally, a maximum zT ∼1.12 at 773 K and an average zT ∼0.62 over 323–773 K are achieved in GeSb2Te3.88I0.12. This work puts forward an effective strategy to synergistically optimize phonon and carrier transport properties of pseudo-binary compounds through halogen doping, which may be effective in other similar material systems.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100973"},"PeriodicalIF":8.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142684805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Convenient synthesis of hollow tubular In2O3/PDA S-scheme inorganic/organic heterojunction photocatalyst for H2O2 production and its mechanism 方便合成用于产生 H2O2 的中空管状 In2O3/PDA S 型无机/有机异质结光催化剂及其机理

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-22 DOI: 10.1016/j.jmat.2024.100978

Yunhao Ma , Shan Wang , Yingjie Zhang , Bei Cheng , Liuyang Zhang

{"title":"Convenient synthesis of hollow tubular In2O3/PDA S-scheme inorganic/organic heterojunction photocatalyst for H2O2 production and its mechanism","authors":"Yunhao Ma , Shan Wang , Yingjie Zhang , Bei Cheng , Liuyang Zhang","doi":"10.1016/j.jmat.2024.100978","DOIUrl":"10.1016/j.jmat.2024.100978","url":null,"abstract":"<div><div>The development of heterojunction photocatalysts for hydrogen peroxide (H2O2) generation is both environmentally sustainable and cost-effective but presents considerable challenges. In this study, we synthesized hollow tubular indium oxide (In2O3) by calcining In-MIL-68 and subsequently composited it with polydopamine (PDA) via in-situ self-polymerization. This process resulted in the formation of an In2O3/PDA step-scheme (S-scheme) heterojunction. The optimized sample demonstrated H2O2 production rates approximately 2.1 and 4.5 times higher than the pure In2O3 and PDA, respectively. The enhanced photocatalytic performance of the In2O3/PDA composite is the result of several synergistic factors: increased light absorption due to the hollow structure, a larger specific surface area, and high separation efficiency of photo-generated electron-hole pairs facilitated by the S-scheme heterojunction. In-situ irradiated X-ray photoelectron spectroscopy (ISI-XPS) confirmed the charge transfer pathway follows the S-scheme mechanism. This work not only highlights a practical method for constructing inorganic/organic S-scheme heterojunction photocatalysts but also provides a detailed analysis of their underlying mechanisms, paving the way for more efficient and sustainable photocatalytic systems.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 3","pages":"Article 100978"},"PeriodicalIF":8.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142684746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface oxygen vacancies in amorphous Fe2O3 tailored nonlinear optical properties for ultrafast photonics 无定形 Fe2O3 表面氧空位为超快光子学定制的非线性光学特性

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-21 DOI: 10.1016/j.jmat.2024.100976

Qingxi Zhao, Hongwei Chu, Zhongben Pan, Han Pan, Shengzhi Zhao, Dechun Li

{"title":"Surface oxygen vacancies in amorphous Fe2O3 tailored nonlinear optical properties for ultrafast photonics","authors":"Qingxi Zhao, Hongwei Chu, Zhongben Pan, Han Pan, Shengzhi Zhao, Dechun Li","doi":"10.1016/j.jmat.2024.100976","DOIUrl":"10.1016/j.jmat.2024.100976","url":null,"abstract":"<div><div>Fe2O3 nanomaterials, as one of the transition metal oxides (TMOs) materials, have garnered attention in ultrafast photonics due to their robust third-order nonlinearity, rapid carrier recovery time, high stability, broad absorption bandwidth and straightforward preparation methods. In order to further enhance the performance of Fe2O3 nanomaterials, oxygen vacancy defects were introduced in the process of preparing the Fe2O3 nanomaterials in this paper. By characterizing the nonlinear optical properties of the prepared Fe2O3 nanomaterials with different surface oxygen vacancy concentrations, we found that Fe2O3 nanomaterials with larger oxygen vacancy content have a deeper modulation depth and the larger third-order nonlinear coefficient. It also indicated that the incorporation of oxygen vacancy defects can significantly enhance the nonlinear optical properties of Fe2O3 nanomaterials. Furthermore, the ultrafast carrier dynamics of Fe2O3 materials with varying concentrations of oxygen vacancies were investigated using femtosecond-resolved transient absorption (TA) spectroscopy, elucidating the microscopic mechanism. Finally, we inserted Fe2O3-based saturable absorbers into Yb- and Er-doped fiber lasers. Noise-like mode-locking operation and multi-pulse mode-locking operation are realized at 1 μm in the Yb-doped fiber laser. Besides, the conventional soliton mode-locking operations with different central wavelengths are realized within 1.5 μm band in an Er-doped fiber laser.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100976"},"PeriodicalIF":8.4,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High temperature magnetoelectric effect in Fe2TeO6 Fe2TeO6 中的高温磁电效应

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-21 DOI: 10.1016/j.jmat.2024.100977

Guoqing Ma , Di Zhou , Yunlong Xie , Shuhan Zheng , Meifeng Liu , Leili Tan , Zhen Liu , Fei Liu , Yao Li , Zhen Ma , Yongjun Zhang , Lin Lin , Min Zeng , Xiuzhang Wang , Saiyu Wang , Hong Li , Shuai Dong , Jun-Ming Liu

{"title":"High temperature magnetoelectric effect in Fe2TeO6","authors":"Guoqing Ma , Di Zhou , Yunlong Xie , Shuhan Zheng , Meifeng Liu , Leili Tan , Zhen Liu , Fei Liu , Yao Li , Zhen Ma , Yongjun Zhang , Lin Lin , Min Zeng , Xiuzhang Wang , Saiyu Wang , Hong Li , Shuai Dong , Jun-Ming Liu","doi":"10.1016/j.jmat.2024.100977","DOIUrl":"10.1016/j.jmat.2024.100977","url":null,"abstract":"<div><div>Fe2TeO6 has long been considered as a promising high-temperature magnetoelectric (ME) material, while the magnetoelectricity and magnetic ground state of Fe2TeO6 have not been well characterized or understood yet. In the present work, we report the systematical study of magnetism, ferroelectricity, ME effect, first principles calculation, and Monte Carlo simulation of Fe2TeO6 single crystals. Fe2TeO6 exhibits linear ME effect below TN ∼208 K, and only diagonal ME coefficients appears to be non-zero, which agrees with the magnetic point group 4/m'm'm'. The calculated magnetic ground state agrees with previous neutron diffraction, and the strong intra(inter)-bilayer interactions coincide with the high TN of Fe2TeO6. This work will contribute to the understanding of A2BO6 ME family and the exploration of high temperature ME materials.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100977"},"PeriodicalIF":8.4,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergetic engineering of SrO vacancies and core‒rim interfacial structures in dielectric Sr1–xBaxTiO3 ceramics 电介质 Sr1-xBaxTiO3 陶瓷中的 Sr-O 空位和核心-边缘界面结构的协同工程设计

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-20 DOI: 10.1016/j.jmat.2024.100972

Qing-Qiao Fu , Hui Gu , Juan-Juan Xing , Qiang Zheng

{"title":"Synergetic engineering of SrO vacancies and core‒rim interfacial structures in dielectric Sr1–xBaxTiO3 ceramics","authors":"Qing-Qiao Fu , Hui Gu , Juan-Juan Xing , Qiang Zheng","doi":"10.1016/j.jmat.2024.100972","DOIUrl":"10.1016/j.jmat.2024.100972","url":null,"abstract":"<div><div>High dielectric constant can be reached in a reductive-sintered Sr1–xBaxTiO3 barrier-layer capacitor with core‒rim structures as dominant microstructural features. By SEM and aberration-corrected TEM observations, an interfacial zone between the core and rim, named as white-rim (w-rim), was found always enriched with Ba, while the core was free of Ba solution. The reductive liquid-phase sintering resulted in three times the concentrations of oxygen vacancies (VO) into cores and rims compared to their A-site vacancies (VA), while enabling the highest concentration of VO (∼17%) without VA in w-rim. The strained core/w-rim interfaces, with obvious interfacial polarizations, which can effectively raise the dielectric constant, were expected to be created from a temporary equilibrium between the cores and the liquid-phase. The synergetic evolution of core‒rim structures, Sr–O vacancies, multiple internal polarized structures can be utilized to better control and optimize dielectric behaviors and other functionalities for perovskite capacitors and other multi-functional ceramics.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100972"},"PeriodicalIF":8.4,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In situ irradiated XPS investigation on S-scheme ZnIn2S4@COF-5 photocatalyst for enhanced photocatalytic degradation of RhB 原位辐照 XPS 研究用于增强 RhB 光催化降解的 S 型 ZnIn2S4@COF-5 光催化剂

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-20 DOI: 10.1016/j.jmat.2024.100975

Jian Sun , Haowei Liu , Shan Wang , Yingjie Zhang , Chuanbiao Bie , Liuyang Zhang

{"title":"In situ irradiated XPS investigation on S-scheme ZnIn2S4@COF-5 photocatalyst for enhanced photocatalytic degradation of RhB","authors":"Jian Sun , Haowei Liu , Shan Wang , Yingjie Zhang , Chuanbiao Bie , Liuyang Zhang","doi":"10.1016/j.jmat.2024.100975","DOIUrl":"10.1016/j.jmat.2024.100975","url":null,"abstract":"<div><div>Recently, the step-scheme (S-scheme) heterojunction has gained significant attention due to its effective electron-hole separation and strong redox capabilities. However, reports on covalent organic framework (COF)-based S-scheme heterojunctions for photocatalytic RhB degradation remain limited. In this study, an S-scheme ZnIn2S4@COF-5 heterojunction photocatalyst was successfully synthesized by growing COF-5 on the surface of ZnIn2S4 nanosheets, achieving efficient RhB degradation. Using 30 mg of ZnIn2S4@COF-5, we degraded 50 mL of an 80×10-6 RhB solution, achieving a 97% removal rate within 90 min. The photocatalytic performance of the ZnIn2S4@COF-5 S-scheme heterojunction was approximately 1.7 times higher than that of ZnIn2S4 and 1.6 times higher than COF-5 alone. Compared to the other reported COF-based S-scheme heterojunctions and commercial photocatalysts, this ZnIn2S4@COF-5 photocatalyst exhibited superior photocatalytic performance. The S-scheme charge transfer mechanism of the ZnIn2S4@COF-5 heterojunction was elucidated through in situ irradiated XPS. Experimental results demonstrate that this rational design not only facilitates the effective separation of photogenerated electrons and holes, but also provides a large surface area and abundant active sites for efficient RhB degradation.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 3","pages":"Article 100975"},"PeriodicalIF":8.4,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

F− surface modified ZnO for enhanced photocatalytic H2O2 production and its fs-TAS investigation 用于提高光催化 H2O2 产率的 F- 表面修饰氧化锌及其 fs-TAS 研究

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-20 DOI: 10.1016/j.jmat.2024.100974

Xin Zhou , Chenbin Ai , Xiaojing Wang , Zhen Wu , Jianjun Zhang

{"title":"F− surface modified ZnO for enhanced photocatalytic H2O2 production and its fs-TAS investigation","authors":"Xin Zhou , Chenbin Ai , Xiaojing Wang , Zhen Wu , Jianjun Zhang","doi":"10.1016/j.jmat.2024.100974","DOIUrl":"10.1016/j.jmat.2024.100974","url":null,"abstract":"<div><div>Pure ZnO exhibits low photocatalytic H2O2 production activity due to the rapid charge recombination. To realize the spatial separation of photogenerated electrons and holes, constructing an electron transfer channel on the ZnO surface is an effective approach. This study successfully modified the surface of ZnO using F− (ZnO/F) by introducing NH4F in an aqueous phase photocatalytic system. The F− is adsorbed on the ZnO surface by Coulombic force and significantly improves the photocatalytic H2O2 production performance of ZnO, with the highest efficiency of 4137.2 μmol⋅g−1·L−1·h–1. The photocatalytic performance enhancement mechanism of ZnO/F is explained in terms of electron transfer dynamics by femtosecond transient absorption spectroscopy (fs-TAS) measurements. F− surface modification constructs a new ultrafast electron transport pathway from the ZnO CB to F−, and the optimal ZnO/F exhibits the fastest interfacial electron transfer lifetime of 5.8 ps. The F− surface modification effectively facilitates the charge separation, thereby increasing the number of electrons available for photocatalytic H2O2 reaction. This study has revealed the roles of F− surface modification in the photocatalytic H2O2 production by ZnO and provides guidance for ionic modification to improve photocatalytic performance.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 3","pages":"Article 100974"},"PeriodicalIF":8.4,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High energy storage performance of (Na0.5Bi0.5)TiO3 thin film induced by stress engineering 应力工程诱导 (Na0.5Bi0.5)TiO3 薄膜的高储能性能

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-11-19 DOI: 10.1016/j.jmat.2024.100971

Yichen Li , Yao Yao , Lei Zhou , Jing Wang , Lei Zhao

{"title":"High energy storage performance of (Na0.5Bi0.5)TiO3 thin film induced by stress engineering","authors":"Yichen Li , Yao Yao , Lei Zhou , Jing Wang , Lei Zhao","doi":"10.1016/j.jmat.2024.100971","DOIUrl":"10.1016/j.jmat.2024.100971","url":null,"abstract":"<div><div>Relaxor ferroelectrics are the primary candidates for high-performance energy storage dielectric capacitors. Here, stress engineering, which was realized by optimizing the lattice mismatch between (Na0.5Bi0.5)TiO3 film and SrRuO3/(La0.5Sr0.5)CoO3 bottom electrodes, was used to enhance the energy storage performance of (Na0.5Bi0.5)TiO3 relaxor ferroelectric film. As a result, in-plane compressive stress caused by the lattice mismatch between (Na0.5Bi0.5)TiO3 film and (La0.5Sr0.5)CoO3 bottom electrode leads to a large Wrec of 45.7 J/cm3 with η of 79.4% at 2000 kV/cm in (Na0.5Bi0.5)TiO3 film, which is 54.4% higher than that of (Na0.5Bi0.5)TiO3 film with in-plane tensile stress. In addition, the Wrec of (Na0.5Bi0.5)TiO3 film with in-plane compressive stress shows good thermal stability and frequency stability with variations of 5.8% at 30–120 °C and 6.9% at 0.2–20.0 kHz. This work may provide some new perspectives for the design of dielectric capacitors with high energy storage performance.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 4","pages":"Article 100971"},"PeriodicalIF":8.4,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142670866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0