Journal of Materiomics最新文献_第7页

A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories 用于非易失性存储器的基于 BaTiO3 的柔性铁电电容器

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-05-09 DOI: 10.1016/j.jmat.2024.04.001

{"title":"A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories","authors":"","doi":"10.1016/j.jmat.2024.04.001","DOIUrl":"10.1016/j.jmat.2024.04.001","url":null,"abstract":"<div>BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories. However, the prerequisites for high-temperature conditions in the fabrication of ferroelectric thin films impose constraints on the substrate choice, which has limited the advancement in non-volatile memories based on single-crystal flexible BTO films with robust ferroelectric properties. Herein, a technique has been developed for the fabrication of flexible devices using a pulsed laser deposition system. BTO ferroelectric films have then been deposited onto a flexible mica substrate, with SrTiO3 (STO) serving as a buffer layer. The obtained flexible BTO devices exhibited excellent ferroelectricity, with a maximum polarization (2Pmax) of up to 42.58 μC/cm2 and a remnant polarization (2Pr) of up to 21.39 μC/cm2. Furthermore, even after 1000 bending cycles, the bipolar switching endurance remained high at 1012 cycles. After 104 s, the flexible BTO device still maintained excellent polarization characteristics. These results make the flexible BTO ferroelectric thin film a potential candidate for the next generation of non-volatile memories.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100870"},"PeriodicalIF":8.4,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000856/pdfft?md5=853cc20f7fffe91a214b65eabd001707&pid=1-s2.0-S2352847824000856-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141046504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabry–Pérot cavity smart windows with superior solar and thermal modulation capabilities 法布里-佩罗空腔智能窗具有卓越的太阳能和热能调节能力

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-05-09 DOI: 10.1016/j.jmat.2024.03.015

{"title":"Fabry–Pérot cavity smart windows with superior solar and thermal modulation capabilities","authors":"","doi":"10.1016/j.jmat.2024.03.015","DOIUrl":"10.1016/j.jmat.2024.03.015","url":null,"abstract":"<div>Smart windows are an important strategy to reduce the energy consumption in buildings, which accounts for as much as 30%–40% of the society's energy consumption. VO2-based thermochromic materials can intelligently regulate the solar heat gains of building interiors. However, the unmatched thermal emissivity (ɛ) modulation of traditional VO2/glass systems, i.e., high emissivity at low temperatures and low emissivity at high temperatures, leads to additional heating and cooling energy loads in winter and summer, respectively. In this study, we propose a novel VO2/polyacrylonitrile (PAN)/AgNW multilayer possessing flexible Ag nanowire supported Fabry–Pérot cavities, which synchronously achieves high modulation abilities in both solar spectrum (ΔTsol of 13.6%) and middle infrared region (Δɛ of 0.50 at 8–13 μm). These achievements are the best among reports for pure VO2 smart windows. This study provides a flexible and effective protocol to dynamically enhance the light and heat utilization for practical building windows.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100871"},"PeriodicalIF":8.4,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000868/pdfft?md5=d1e67c8ac0c02b1fcf1f28f6ea0fb02b&pid=1-s2.0-S2352847824000868-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141024404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrahigh energy storage density and efficiency in A/B-site co-modified silver niobate relaxor antiferroelectric ceramics A/B 位共修饰铌酸银弛豫反铁电体陶瓷的超高储能密度和效率

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-05-08 DOI: 10.1016/j.jmat.2024.03.014

{"title":"Ultrahigh energy storage density and efficiency in A/B-site co-modified silver niobate relaxor antiferroelectric ceramics","authors":"","doi":"10.1016/j.jmat.2024.03.014","DOIUrl":"10.1016/j.jmat.2024.03.014","url":null,"abstract":"<div>AgNbO3-based antiferroelectric ceramics can be used to prepare dielectric ceramic materials with energy storage performance. However, their efficiency is much lower than that of relaxors, which is one of the biggest obstacles for their applications. To overcome this problem, AgNbO3 ceramics co-doped with Eu3+ and Ta5+ at the A- and B-sites were prepared in this work. The Ag0.97Eu0.01Nb0.85Ta0.15O3 sample has a Wr of 6.9 J/cm3 and an η of 74.6%. The ultrahigh energy storage density and efficiency of Ag0.97Eu0.01Nb0.85Ta0.15O3 has been ascribed to the synergistic effect of the increase in the breakdown electric field, the enhancement of antiferroelectric stability, the construction of multiphase coexistence, and the modification of the domain structure morphology. The Ag0.97Eu0.01Nb0.85Ta0.15O3 ceramic is expected to be one of the options for preparing dielectric capacitors.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100869"},"PeriodicalIF":8.4,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000844/pdfft?md5=3cb6fd75b0c1fc3dad3b422275e58306&pid=1-s2.0-S2352847824000844-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141048588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth 控制晶格变形，促进高迁移率二维碲化镉(MoTe2)生长

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-24 DOI: 10.1016/j.jmat.2024.03.013

{"title":"Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth","authors":"","doi":"10.1016/j.jmat.2024.03.013","DOIUrl":"10.1016/j.jmat.2024.03.013","url":null,"abstract":"<div><div>Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization process of Mo-source precursor (MSP). However, the target product 2H-MoTe2 from Mo precursor suffers from long growth time and suboptimal crystal quality, and MoOx precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products. Here, we developed magnetron-sputtered MoO3 film for fast and high-mobility 2H-MoTe2 growth. The solid-to-solid phase transition growth mechanism of 2D MoTe2 from Mo and MoOx precursor was first experimentally unified, and the effect mechanism of MSPs on 2D MoTe2 growth was systematically elucidated. Compared with Mo and MoO2, the MoO3 precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products. Meanwhile, the lowest Gibbs free energy change of the chemical reaction results in an impressive 2H-MoTe2 growth rate of 8.07 μm/min. The constructed 2H-MoTe2 field-effect transistor array from MoO3 precursor showcases record-high hole mobility of 85 cm2·V-1·s-1, competitive on-off ratio of 3×104, and outstanding uniformity. This scalable method not only offers efficiency but also aligns with industry standards, making it a promising guideline for diverse 2D material preparation towards real-world applications.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100868"},"PeriodicalIF":8.4,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140757056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature 室温下局部操纵 Fe3GaTe2 中的天离子晶格

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-23 DOI: 10.1016/j.jmat.2024.03.010

Shuaizhao Jin , Zhan Wang , Shouzhe Dong , Yiting Wang , Kun Han , Guangcheng Wang , Zunyi Deng , Xingan Jiang , Ying Zhang , Houbing Huang , Jiawang Hong , Xiaolei Wang , Tianlong Xia , Sang-Wook Cheong , Xueyun Wang

{"title":"Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature","authors":"Shuaizhao Jin , Zhan Wang , Shouzhe Dong , Yiting Wang , Kun Han , Guangcheng Wang , Zunyi Deng , Xingan Jiang , Ying Zhang , Houbing Huang , Jiawang Hong , Xiaolei Wang , Tianlong Xia , Sang-Wook Cheong , Xueyun Wang","doi":"10.1016/j.jmat.2024.03.010","DOIUrl":"10.1016/j.jmat.2024.03.010","url":null,"abstract":"<div>Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100865"},"PeriodicalIF":8.4,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000704/pdfft?md5=6a6e3d4b31b996bc5421da5903bbf2e8&pid=1-s2.0-S2352847824000704-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142162987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mutual control of electric and magnetic orders near room temperature in Al doped Y-type hexaferrite single crystals 掺铝 Y 型六铁氧体单晶中室温附近电阶和磁阶的相互控制

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-22 DOI: 10.1016/j.jmat.2024.03.012

{"title":"Mutual control of electric and magnetic orders near room temperature in Al doped Y-type hexaferrite single crystals","authors":"","doi":"10.1016/j.jmat.2024.03.012","DOIUrl":"10.1016/j.jmat.2024.03.012","url":null,"abstract":"<div>Realizing robust magnetoelectric (ME) coupling effect near room temperature is still a long-standing challenge for the application of multiferroic materials in next-generation low-power spintronic and memory devices. Here we report a systematic study on the magnetic, dielectric, and ME coupling properties of Y-type hexaferrite Ba0.5Sr1.5Co2Fe12–xAlxO22 (x = 0.0, 0.5, 1.0) single crystals. The Al doping can induce the shifting of the alternating longitudinal conical (ALC)-proper screw (PS) magnetic phase transition temperature from 200 K for x = 0–365 K for x = 1.0. The most interesting feature is that the Ba0.5Sr1.5Co2Fe11AlO22 single crystal displays a direct and converse ME coupling coefficient with <math><msub><mi>α</mi><mi>H</mi></msub></math> ∼3,100 ps/m and <math><msub><mi>α</mi><mi>E</mi></msub></math> ∼3,900 ps/m at 250 K, respectively, due to the Al-doped enhanced stability of ALC phase. Moreover, the exchange bias also verifies the strong coupling of electric and magnetic orders. These results provide a valuable insight on the modulation of ALC structure and the mechanism of ME effect in Y-type hexaferrites.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100867"},"PeriodicalIF":8.4,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000728/pdfft?md5=536acdf44f3c3203cd342a7433db883a&pid=1-s2.0-S2352847824000728-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140789952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fluorinated molecular diamond improved polymer electrolytes enable stable cycling with high capacity of all-solid-state lithium-metal batteries 氟化分子金刚石改良聚合物电解质实现了全固态锂金属电池的稳定循环和高容量

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-21 DOI: 10.1016/j.jmat.2024.03.009

{"title":"Fluorinated molecular diamond improved polymer electrolytes enable stable cycling with high capacity of all-solid-state lithium-metal batteries","authors":"","doi":"10.1016/j.jmat.2024.03.009","DOIUrl":"10.1016/j.jmat.2024.03.009","url":null,"abstract":"<div>The interfacial incompatibility of the poly (ethylene oxide)-based electrolytes hinder the longevity and further practice of all-solid-state batteries. Herein, we present a productive additive 1-Fluoroadamantane facilitating to the distinct performance of the poly (ethylene oxide)-based electrolytes. Attributed to the strong molecular interaction, the coordination of the Li+-EO is reduced and the ‘bonding effect’ of anion is improved. Thus, the Li + conductivity is promoted and the electrochemical window is widened. The diamond building block C10H15− strengthens the stability of the solid polymer electrolytes. Importantly, the 1-Fluoroadamantane mediates the generation of LiF in the interfaces, which fosters the interfacial stability, contributing to the long-term cycling. Hence, the symmetric cell (Li/Li) exhibits a long-term lithium plating/stripping for over 2,400 h. The 4.3 V LiNi0.8Mn0.1Co0.1O2/Li all-solid-state battery with the 1-Fluoroadamantane-poly (ethylene oxide) improved electrolyte delivers 600 times, with an impressive capacity retention of 84%. Also, the cell presents high capacity of 210 mA·h/g, and 170 mA·h/g at 0.1 C and 0.3 C respectively, rivalling the liquid electrolytes.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100864"},"PeriodicalIF":8.4,"publicationDate":"2024-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000698/pdfft?md5=1833c8043b2f2a046ace4392b78c5f77&pid=1-s2.0-S2352847824000698-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140762893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor 基于 Au/Bi3.2La0.8Ti3O12/ITO 记忆晶粒的人工突触模拟痛觉感受器和脑启发计算

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-21 DOI: 10.1016/j.jmat.2024.03.011

{"title":"Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor","authors":"","doi":"10.1016/j.jmat.2024.03.011","DOIUrl":"10.1016/j.jmat.2024.03.011","url":null,"abstract":"<div>Recently, memristors have garnered widespread attention as neuromorphic devices that can simulate synaptic behavior, holding promise for future commercial applications in neuromorphic computing. In this paper, we present a memristor with an Au/Bi3.2La0.8Ti3O12 (BLTO)/ITO structure, demonstrating a switching ratio of nearly 103 over a duration of 104 s. It successfully simulates a range of synaptic behaviors, including long-term potentiation and depression, paired-pulse facilitation, spike-timing-dependent plasticity, spike-rate-dependent plasticity etc. Interestingly, we also employ it to simulate pain threshold, sensitization, and desensitization behaviors of pain-perceptual nociceptor (PPN). Lastly, by introducing memristor differential pairs (1T1R-1T1R), we train a neural network, effectively simplifying the learning process, reducing training time, and achieving a handwriting digit recognition accuracy of up to 97.19 %. Overall, the proposed device holds immense potential in the field of neuromorphic computing, offering possibilities for the next generation of high-performance neuromorphic computing chips.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"10 6","pages":"Pages 1308-1316"},"PeriodicalIF":8.4,"publicationDate":"2024-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000716/pdfft?md5=84bfc6d7009c3422aa2d5029822af974&pid=1-s2.0-S2352847824000716-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140780553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic effect of porous structure and gradient structure in carbon foam to boost terahertz absorption 泡沫碳中多孔结构和梯度结构对促进太赫兹吸收的协同效应

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-16 DOI: 10.1016/j.jmat.2024.03.008

{"title":"Synergistic effect of porous structure and gradient structure in carbon foam to boost terahertz absorption","authors":"","doi":"10.1016/j.jmat.2024.03.008","DOIUrl":"10.1016/j.jmat.2024.03.008","url":null,"abstract":"<div>Creating porous structures and gradient structures are two commonly used design strategies for terahertz (THz) absorption enhancement. However, the synergistic effect of porous structure and gradient structure on THz absorption still remains less explored. Here, we took an almost non-conductive porous carbon foam as raw material, and fabricated an integrated gradient porous carbon foam (PCF) by microwave selective sintering. The experimental results show that the synergistic effect of the porous and gradient structures resulted in a 140% improvement in THz absorption performance. Specifically, an excellent average absorption intensity of −38.8 dB (absorptivity is about 99.99%) is obtained in the frequency range from 0.5 to 4.0 THz. COMSOL simulation and transmission line model were applied to explore the formation mechanism and the gradient loss capabilities of gradient structure. This work not only reveals the synergistic enhancement mechanism of porous and gradient structures for the THz absorption, but also provides new insights into the design of high-performance THz absorbers in the future.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 2","pages":"Article 100863"},"PeriodicalIF":8.4,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000686/pdfft?md5=c6e530d9552d3e457bbdf3f67be7b0f0&pid=1-s2.0-S2352847824000686-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140766804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Excellent energy storage performances for BaTiO3-based multilayer capacitors through synergistic high-entropy and superparaelectric-relaxor strategy 通过协同高熵和超准电松弛策略实现基于 BaTiO3 的多层电容器的卓越储能性能

IF 8.4 1区材料科学

Journal of Materiomics Pub Date : 2024-04-16 DOI: 10.1016/j.jmat.2024.03.005

{"title":"Excellent energy storage performances for BaTiO3-based multilayer capacitors through synergistic high-entropy and superparaelectric-relaxor strategy","authors":"","doi":"10.1016/j.jmat.2024.03.005","DOIUrl":"10.1016/j.jmat.2024.03.005","url":null,"abstract":"<div>Dielectric capacitors with high energy storage performances are exceedingly desired for the next-generation advanced high/pulsed power devices that demand miniaturization and integration. However, poor energy-storage density (Urec) and low efficiency (η) resulted from the large remanent polarization (Pr) and low breakdown strength (BDS), have been the major challenge for the application of dielectric capacitors. Herein, a high-entropy strategy with superparaelectric relaxor ferroelectrics (SP-RFE) was adopted to achieve extremely low Pr and high BDS in BaTiO3 system, simultaneously. Due to the high BDS ∼800 kV/cm and low Pr ∼0.58 μC/cm2, high-entropy SP-RFE (La0.05Ba0.18Sr0.18K0.115Na0.115Ca0.18Bi0.18)TiO3 (LBSKNCBT) MLCCs exhibited high Urec ∼6.63 J/cm3 and excellent η ∼ 96%. What's more, LBSKNCBT MLCCs with high-entropy and SP-RFE characteristic also possess a good temperature and frequency stability. In a word, this work offers an excellent paradigm for achieving good energy-storage properties of BaTiO3-based dielectric capacitors to meet the demanding requirements of advanced energy storage applications.</div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 1","pages":"Article 100860"},"PeriodicalIF":8.4,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2352847824000650/pdfft?md5=db4b5d7f279abe074d492bcedb27cd7a&pid=1-s2.0-S2352847824000650-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140780481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0