Enhancing room temperature electron mobility at high carrier concentration in transparent BaSnO3/La:BaSnO3/BaSnO3 heterostructures

IF 8.4 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Journal of Materiomics Pub Date : 2025-03-13 DOI:10.1016/j.jmat.2025.101054

Yingli Zhang , Haopeng Du , Dirui Wu , Jinxin Ge , Jiahao Song , Mengkang Xu , Qingjiao Huang , Jiangyu Li , Changjian Li

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Abstract

Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications. La doped BaSnO₃ is a strong candidate for its high transparency, high carrier concentration, high mobility and abundancy. However, due to the lack of lattice-matched substrates, the mobility of La:BaSnO₃ remains inferior to single crystals. Here, by constructing a novel approach via delta doping La:BaSnO₃ in a BaSnO₃/La:BaSnO₃/BaSnO₃ (BSO/LBSO/BSO) heterostructure, we achieved room temperature mobility enhancement up to 110 cm²⸱V⁻¹⸱s⁻¹ while keeping the high carrier concentration at 5 × 10²⁰ cm⁻³, reaching to the highest electrical conductivity in BaSnO₃ based systems. The mobility is enhanced more than 100% compared to our La:BaSnO₃ films, which is among the highest mobility in BaSnO₃ based films and heterostructures. From atomic structural investigations, we found that both (1) the carrier confinement due to delta doping and (2) dislocation-free La:BaSnO₃ conducting channel, revealed by atomic resolution scanning transmission electron microscopy (STEM) studies, are responsible for mobility enhancement. The enhanced mobility from heterostructure approach is widely applicable for transparent electrodes and high current thin film transistor applications.

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在高载流子浓度下提高透明BaSnO3/La:BaSnO3/BaSnO3异质结构的室温电子迁移率

透明导电氧化物在光电和薄膜晶体管应用中越来越重要。La掺杂BaSnO3具有高透明度、高载流子浓度、高迁移率和丰度等优点。然而，由于缺乏晶格匹配的衬底，La:BaSnO3的迁移率仍然不如单晶。本文通过在BaSnO3/La:BaSnO3/BaSnO3 （BSO/LBSO/BSO）异质结构中δ掺杂La:BaSnO3，实现了室温迁移率高达110 cm2⸱V-1⸱s-1的增强，同时保持了5×1020 cm-3的高载流子浓度，达到了BaSnO3基体系中最高的电导率。与我们的La:BaSnO3薄膜相比，迁移率提高了100%以上，是BaSnO3薄膜和异质结构中迁移率最高的薄膜之一。从原子结构研究中，我们发现：(1)δ掺杂导致的载流子约束和(2)原子分辨率扫描透射电子显微镜（STEM）研究发现的无位错的La:BaSnO3导电通道是迁移率增强的原因。异质结构提高迁移率的方法广泛应用于透明电极和大电流薄膜晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materiomics Materials Science-Metals and Alloys

CiteScore

14.30

自引率

6.40%

发文量

331

审稿时长

37 days

期刊介绍： The Journal of Materiomics is a peer-reviewed open-access journal that aims to serve as a forum for the continuous dissemination of research within the field of materials science. It particularly emphasizes systematic studies on the relationships between composition, processing, structure, property, and performance of advanced materials. The journal is supported by the Chinese Ceramic Society and is indexed in SCIE and Scopus. It is commonly referred to as J Materiomics.