34th ARFTG Conference Digest最新文献

A Possible Source of Error in On-Wafer Calibration 片上校准中可能的误差来源

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323962

J. Rautio

引用次数: 8

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323959

D. Dawson, M. Salib

{"title":"On-Wafer Power Measurements","authors":"D. Dawson, M. Salib","doi":"10.1109/ARFTG.1989.323959","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323959","url":null,"abstract":"map of Figure 1, 41 d i e ou t of a poss ib l e 122 d i e had g r e a t e r than 32 dBm o f output power. and the d i e s i t e s with \"zeros\" are d i e t h a t were DC bad. The d e f i n i t i o n of DC bad was any d i e t h a t d id not p inchoff . For example, a d i e wi th a shor t ed ga te has high d r a i n cu r ren t t h a t remains \"s tuck\" h igh as V,, i s ramped from zero t o a lower l i m i t such a s -5V. A device with a ga t e vo id (open ga te ) has a d r a i n cu r ren t t h a t a l s o remains h igh as V,, is ramped more.negat ive. with \"zeros\" then a r e d i e t h a t are DC bad, and t i m e w a s n o t spent on RF t e s t i n g . A wafer with 35% y i e l d the re fo re only has RF t e s t t i m e spent on 35% of the d i e , and the f a s t e r DC \"screening\" i s spent on 65% of the d i e . Figure 2 shows the average y i e l d of devices measured over the l a s t two yea r s . I f wafers t h a t made i t t o t es t a r e the b a s i s of y i e l d , t he average y i e l d was 23%; i f the wafers t h a t s t a r t e d processing a r e the b a s i s of y i e l d , the average y i e l d was 16%. The da ta of Figure 2 is from 700 devices t h a t w e r e power t e s t e d , and the l a r g e amount o f da t a shows t h a t power measurements a t wafer level a r e poss ib l e . Wafer maps of output power have been obtained ( see Figure 1). On the wafer","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129416657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Achieving greater on-wafer S-parameter accuracy with the LRM calibration technique 通过LRM校准技术实现更高的晶圆上s参数精度

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323957

A. Davidson, E. Strid, Keith Jones

引用次数: 79

A Cost-Effective Production DC/RF On-Wafer GaAs FET Measurement System 具有成本效益的生产DC/RF晶圆上GaAs场效应管测量系统

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323964

Eric S. Copeland, Matthew M. Borg, K. Kerwin

引用次数: 1

2-26.5 GHZ On-Wafer Noise and S-Parameter Measurements Using a Solid State Tuner 基于固态调谐器的2-26.5 GHZ片上噪声和s参数测量

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323954

V. Adamian

引用次数: 20

Improved Accuracy of On-Wafer Measurements Using the MMAVERIC Calibration Technique 使用MMAVERIC校准技术提高晶圆上测量的精度

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323958

H. Sequeira, M. Trippe

{"title":"Improved Accuracy of On-Wafer Measurements Using the MMAVERIC Calibration Technique","authors":"H. Sequeira, M. Trippe","doi":"10.1109/ARFTG.1989.323958","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323958","url":null,"abstract":"Besides calculating the usual coefficients of a 3-term (one-port) or 12-term (two-port) error model, the MMAVERIC technique provides 1) a corruption factor, 2) the phase and loss of the transmission line in which the calibration is performed, and 3) the reflection coefficient of one of the terminations used in the procedure. Each of these outputs is a valuable tool for analyzing and minimizing residual calibration errors. The corruption factor is a sensitive measure of the aggregate contributions of all departures from the ideal situation. For example, if one of the calibration standards is a short, we can determine how closely it approaches the ideal magnitude, |Γ|= 1, and phase, argΓ = 180/°. Our experimental evidence has shown that, at 40 GHz, |Γ| for a coplanar short directly contacted by the probe is about 0.7 dB smaller than that for a short seen through a length of coplanar line on the substrate. Thus, lower corruption and residual calibration errors are obtained if the reference plane is defined on the substrate at some distance away from the probe tips. We have corroborated the work of others(4) by modeling the short as a small reactance and shown how further improvements are achieved by separating the substrate from the wafer chuck by a low-dielectric spacer.","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133817037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Generalized Vector Network Analyzer Calibration Technique 一种广义矢量网络分析仪标定技术

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323956

John T. Barr, Michael J. Pervere

引用次数: 17

An Integrated Approach to High-Volume Production and Automated Testing of Microwave Power Modules, Using Distributed PCS 基于分布式pc机的微波功率模块大批量生产和自动化测试集成方法

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323965

D. Glajchen

引用次数: 2

A Ka-Band On-Wafer S-Parameter and Noise Figure Measurement System 一种ka波段片上s参数和噪声系数测量系统

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323963

L. Dunleavy

引用次数: 13

Analysis of Circuit Parameters Using TSD Method 用TSD方法分析电路参数

34th ARFTG Conference Digest Pub Date : 1989-11-01 DOI: 10.1109/ARFTG.1989.323961

H. Stinehelfer

引用次数: 0