通过LRM校准技术实现更高的晶圆上s参数精度

A. Davidson, E. Strid, Keith Jones
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引用次数: 79

摘要

自1983年引入微波晶圆探测以来,主要的矢量网络分析仪校准技术是短开负载通(SOLT)。透反射线(TRL)技术也被用于某些应用中,这两种方法都可以相对容易和高度精确地进行有价值的测量。然而,每种技术都有缺点,可能会妨碍准确性或阻止某些应用。一种新的方法,“线反射匹配(LRM)”,克服了许多这些缺点,从而允许更准确和更通用的晶圆上校准。此外,LRM执行起来更简单,因为它需要的标准更少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Achieving greater on-wafer S-parameter accuracy with the LRM calibration technique
Since the Introduction of microwave wafer probing In 1983 the dominant vector network analyzer calibration technique has been the short-open-load-thru (SOLT). The thru-reflect-line (TRL) technique has also been used In certain applications, and both approaches have enabled valuable measurements to be made with relative ease and a high degree of accuracy. Each technique, however, has drawbacks which may hinder accuracy or prevent certain applications. A new method,' line-reflect-match (LRM), circumvents many of these drawbacks, thereby allowing a more accurate and more versatile on-wafer calibration. In addition, LRM is simpler to perform because it requires fewer standards.
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