{"title":"Development of Calibration and Verification Standards in Microstrip to 60 GHz","authors":"W. Oldfield","doi":"10.1109/ARFTG.1989.323953","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323953","url":null,"abstract":"This paper discusses the development of microstrip standards for calibration and accuracy verification. Calibration standards for both OPEN-SHORT-LOAD and LRL are explored. The standards were developed for use in the newly developed Wiltron microstrip test fixture. Test data to confirm the quality of the calibrations is presented. Practical techniques for making multiport microstrip measurements without the need of special test fixtures are discussed.","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116371676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On-Wafer Microwave Standards at NIST","authors":"Dylan F. Williams","doi":"10.1109/ARFTG.1989.323951","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323951","url":null,"abstract":"The National Institute of Standards and Technology has begun a program to develop standards and calibration services for microwave wafer-level probing systems. The standards will be based on planar transmission lines and are designed to support measurements between 1 and 40 GHz. The program objectives, organization, and plans are discussed.","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123689940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Limitations of Characterizing mm-Wave MODFETs with Microwave Probes","authors":"B. Hughes, H. Kondoh, J. Perdomo, P. Tasker","doi":"10.1109/ARFTG.1989.323960","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323960","url":null,"abstract":"The accuracy of microwave probing is not adequate for the characterization of MODFETs used in the most demanding mm-wave circuit applications. Accuracy of 5 % for most device model circuit elements is desireable. This requirement demands accuracies of 1 fF, 1 pH, 0.08 ¿ and 0.1 pS. Examples are given demonstrating why this accuracy is desired and the calibration errors limiting this accuracy. The pads normally used to allow contact of the probes to the devices introduce parasitic capacitances that are significant (e.g., Cgd = 1.8 fF) for small mm-wave devices. The standard calibration technique does not account for the pads. It is shown that the pad capacitances can not be simply subtracted because of 3 body capacitance effects. The pads also move the reference planes back from the intrinsic device; this effect appears as inductances that have a significant effect on the model for larger MODFETs. For example, an error of 10 pH in the gate inductance of a 350 ¿m wide MODFET reduces the modelled gain of a narrow-band 42 GHz amp by 3 dB. Measurements of the standard Load-Open-Short-Thru calibration reflection standards using a Load-Reflect-Thru calibration suggest that the open capacitance accuracy is worse than 3 fF. Modelling showed that an error 0.1 pS in the transmission reflection planes produces an Rgs error of 10 % for active MODFETs and 50 % for passive MODFET. Experiments suggest the error is worse than 0.1 pS.","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130054933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wafer-Level ANA Calibrations at NIST","authors":"R. Marks, Kurt Phillips","doi":"10.1109/ARFTG.1989.323952","DOIUrl":"https://doi.org/10.1109/ARFTG.1989.323952","url":null,"abstract":"The National Institute of Standards and Technology has begun a program supporting on-wafer scattering parameter measurements. In contrast to many previous NIST endeavors, this program seeks to transfer methodology into industrial measurement laboratories. The subject of this paper is the development of calibration techniques and algorithms, rather than physical standards, for the measurement of on-wafer scattering parameters. In particular, we discuss a TRL-based method which uses transmission lines as standards but includes redundant measurements to improve calibration accuracy and bandwidth.","PeriodicalId":153615,"journal":{"name":"34th ARFTG Conference Digest","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126141517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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