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2010 International Conference on Microelectronic Test Structures (ICMTS)最新文献

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Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment 组合测试结构用于系统和随机效应及栅极电阻过程变化评估
2010 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2010-03-22 DOI: 10.1109/ICMTS.2010.5466810
L. Bortesi, L. Vendrame, G. Fontana
{"title":"Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment","authors":"L. Bortesi, L. Vendrame, G. Fontana","doi":"10.1109/ICMTS.2010.5466810","DOIUrl":"https://doi.org/10.1109/ICMTS.2010.5466810","url":null,"abstract":"A powerful and compact test structure based on the combination of mosfet and resistor mismatch-like configurations is presented. This new combined solution helps to assess not only the systematic and stochastic mosfet and gate resistance electrical performance and their process variations but also the dependencies on the environment and the impact of different layout solutions.","PeriodicalId":153086,"journal":{"name":"2010 International Conference on Microelectronic Test Structures (ICMTS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124614974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies 测量深亚微米技术中单事件感应电荷共享的测试电路
2010 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2010-03-22 DOI: 10.1109/ICMTS.2010.5466844
O. Amusan, B. Bhuva, M. Casey, M. Gadlage, D. McMorrow, J. Melinger, L. Massengill
{"title":"Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies","authors":"O. Amusan, B. Bhuva, M. Casey, M. Gadlage, D. McMorrow, J. Melinger, L. Massengill","doi":"10.1109/ICMTS.2010.5466844","DOIUrl":"https://doi.org/10.1109/ICMTS.2010.5466844","url":null,"abstract":"A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes.","PeriodicalId":153086,"journal":{"name":"2010 International Conference on Microelectronic Test Structures (ICMTS)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123707131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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