测量深亚微米技术中单事件感应电荷共享的测试电路

2010 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2010-03-22 DOI:10.1109/ICMTS.2010.5466844

O. Amusan, B. Bhuva, M. Casey, M. Gadlage, D. McMorrow, J. Melinger, L. Massengill

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引用次数: 2

摘要

一种用于测量单事件诱导电荷共享的新型片上测试电路已经开发并在IBM 90nm工艺中实现。双光子吸收(TPA)背面激光照射的测试测量有助于证明测试电路在表征亚100nm块体CMOS工艺的电荷共享效应方面的有效性。

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Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies

A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes.

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2010 International Conference on Microelectronic Test Structures (ICMTS)

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