组合测试结构用于系统和随机效应及栅极电阻过程变化评估

2010 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2010-03-22 DOI:10.1109/ICMTS.2010.5466810

L. Bortesi, L. Vendrame, G. Fontana

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引用次数: 0

摘要

提出了一种功能强大、结构紧凑的基于mosfet和电阻失配的组合测试结构。这种新的组合解决方案不仅有助于评估系统和随机的mosfet和栅极电阻电气性能及其工艺变化，还有助于评估对环境的依赖性和不同布局解决方案的影响。

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Combined test structure for systematic and stochastic mosfets and gate resistance process variation assessment

A powerful and compact test structure based on the combination of mosfet and resistor mismatch-like configurations is presented. This new combined solution helps to assess not only the systematic and stochastic mosfet and gate resistance electrical performance and their process variations but also the dependencies on the environment and the impact of different layout solutions.

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2010 International Conference on Microelectronic Test Structures (ICMTS)

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