2023 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第9页

Switching Loss Analysis of Three-Phase Three- Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs 串联10kv SiC mosfet使能三相三电平中性点箝位变换器极的开关损耗分析

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131392

Nithin Kolli, Sanket Parashar, Raj Kumar Kokkonda, S. Bhattacharya, V. Veliadis

{"title":"Switching Loss Analysis of Three-Phase Three- Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs","authors":"Nithin Kolli, Sanket Parashar, Raj Kumar Kokkonda, S. Bhattacharya, V. Veliadis","doi":"10.1109/APEC43580.2023.10131392","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131392","url":null,"abstract":"The recent advancement in the technology of SiC MOSFETs has spurred interest in designing compact and high switching frequency (10–20 kHz) power converters. However, grid-integration of these power converters at medium voltage (MV) scale would require a conventional transformer. With the development of new high voltage (HV) 10 kV and 15 kV SiC MOSFETs, these converters can directly interface with medium voltage (MV) grids without the need for line-frequency transformers, using simple two-level and three-level topologies. The application of these devices is currently being explored in all MV Applications (8 kV to 30 kV) like Solid State Transformer, MV Drives, Power Conditioning Systems, and MVDC isolators. This paper discusses application of 10 kV SiC MOSFETs and JBS Diodes for enabling Asynchronous Microgrid Power Conditioning System (AMPCS). This medium voltage power converter is enabled by series-connection of devices, in a Three-Level Neutral Point Clamped (3L-NPC) configuration. The voltage balancing of these series-connected devices is achieved by using R C-snubbers. This paper addresses the different conduction modes and switching sequences of a 3L-NPC pole, which is used as building block for the three-phase converter. The switching loss analysis, for various snubber values, is presented for the MOSFETs and the clamping diodes along with experimental results. This research helps in providing an overview of switching losses that are disspated through the device (and heatsink) and through the snubber resistor in a 3L-NPC convertor pole.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125808822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities 一种智能碳化硅功率模块，具有通过Wi-Fi进行脉宽调制和支持无线功率传输的栅极驱动器，具有板载健康状态估计器和高压缩放功能

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131317

F. Khan, Sarwar Islam, J. Major, Adil Usman, G. Moreno, S. Narumanchi

{"title":"A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities","authors":"F. Khan, Sarwar Islam, J. Major, Adil Usman, G. Moreno, S. Narumanchi","doi":"10.1109/APEC43580.2023.10131317","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131317","url":null,"abstract":"A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126035109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates 用于高频转换器应用的先进GaN IPM与薄衬底

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131488

Sourish S. Sinha, Tzu-Hsuan Cheng, Keval Parmar, D. Hopkins

{"title":"Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates","authors":"Sourish S. Sinha, Tzu-Hsuan Cheng, Keval Parmar, D. Hopkins","doi":"10.1109/APEC43580.2023.10131488","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131488","url":null,"abstract":"Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124624061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic power allocation control for frequency regulation using hybrid electrolyzer systems 混合电解槽系统的频率调节动态功率分配控制

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131557

M. Agredano-Torres, Q. Xu, Mengfan Zhang, L. Söder, A. Cornell

引用次数: 0

Shielding Technique of Planar Transformers to Suppress Common-Mode EMI Noise for LLC Converter with Full Bridge Rectifier 平面变压器抑制全桥整流器LLC变换器共模EMI噪声的屏蔽技术

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131601

Feng Jin, Ahmed Nabih, Qiang Li

{"title":"Shielding Technique of Planar Transformers to Suppress Common-Mode EMI Noise for LLC Converter with Full Bridge Rectifier","authors":"Feng Jin, Ahmed Nabih, Qiang Li","doi":"10.1109/APEC43580.2023.10131601","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131601","url":null,"abstract":"The planar transformer shows excellent benefits when applied in a high efficiency and high power density LLC converter with increased common-mode (CM) noise caused by the large interwinding capacitances. For the shielding design of a half-bridge (HB) LLC converter with a full-bridge rectifier(FBR), it is essential to find the static-electric-potential (SEP) point in the physical primary or secondary windings. With the proper design of the ground connection of shielding winding, the voltage potential difference between shielding winding and primary/secondary windings is minimized, and the net displacement CM current diminishes. In this paper, the analysis of the SEP point of different transformers for the HBLLC converter with a FBR was discussed, and the net CM current under different ground connection strategies of shielding winding was compared. The CM noises of different strategies are measured based on a 1.5kW HBLLC converter with FBR hardware platform. The EMI measurement results show that it can attenuate the CM noise by 20 dB or more with proper shielding design.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128442270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DAB-based Energy Storage System with Flexible Voltage Configuration and Extended Power Capability 基于dab的柔性电压配置和扩展功率的储能系统

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131589

E. Serban, Cosmin Pondiche, M. Ordonez

{"title":"DAB-based Energy Storage System with Flexible Voltage Configuration and Extended Power Capability","authors":"E. Serban, Cosmin Pondiche, M. Ordonez","doi":"10.1109/APEC43580.2023.10131589","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131589","url":null,"abstract":"Product developments and requirements for wide operational voltage range of bidirectional power converters represent a technical challenge. To overcome the limitations of the current state-of-the-art, the proposed DAB-based converter topology employs a switch combination for parallel-series bridges configuration. The switching nodes of the low-voltage (LV) bridges are separately connected at the two transformer terminals. The dc ports of the two LV-bridges are interconnected through a switch interface which allows them to operate in a parallel-series fashion. The DAB-based converter with the switch interface doubles the voltage utilization range, which enables a broad range of applications for batteries (e.g., 48-V, 120-V). The MOSFET power devices within the DAB-based converter are used within their safe operation specification, while the proposed architecture allows flexible voltage configuration for different types of batteries. Furthermore, the proposed DAB-based converter extends the power capability of the converter to advantageously facilitate applications for energy storage systems (ESS). The experimental results have been performed using a 5kW nominal power DAB-based converter with silicon carbide (SiC) and silicon power MOSFET devices.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128201596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Novel DPWM Method with Suppression of the Voltage Unbalance in the Neutral-Point for Vienna Rectifier 抑制维也纳整流器中性点电压不平衡的新型DPWM方法

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131193

Young-Min Go, June-Seok Lee

{"title":"Novel DPWM Method with Suppression of the Voltage Unbalance in the Neutral-Point for Vienna Rectifier","authors":"Young-Min Go, June-Seok Lee","doi":"10.1109/APEC43580.2023.10131193","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131193","url":null,"abstract":"This paper proposes discontinuous Pulse-Width Modulation (DPWM) method for Vienna rectifier with mitigation of the voltage unbalance in the neutral-point. Vienna rectifier is greatly stable and well-established topology for high power transmission system. However, since Vienna rectifier has the circuit structure that each phase leg and mid-point of dc-link capacitor are connected, DC and AC voltage unbalance can occur at the neutral-point. In the proposed method, fluctuation of the neutral-point voltage is analyzed based on space-vector diagram. Based on the analysis, one of the three-phase reference voltages is selected as clamped phase for suppressing the AC voltage unbalance. Furthermore, DC unbalance can be suppressed by applying the modulation method which considers the difference between dc-link top voltage and bottom voltage. In addition, mathematical prediction of the neutral-point voltage fluctuation is presented for applicating the proposed method regardless of the accuracy of the dc-link voltage sensor. The performance and validity of the proposed method is verified by simulations.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127272042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Virtual Prototyping System for Silicon-Carbide Power Modules 碳化硅功率模块虚拟样机系统

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131595

K. Neumaier, Vaclav Valenta, Jonathan Chu, Yunpeng Xiao, S. Benczkowski, Bob Marquis, Sameer Yadav, Jonathan Harper, O. Picha, Rajani Thirukoluri, Roveendra Paul, Leon Zhang, Levan Bidzishvili, Thierry Bordignon, J. Victory

引用次数: 0

Voltage Balancing of a New Five-Level Multilevel Inverter with a Modified Carrier Pulse Width Modulation Scheme 一种改进载波脉宽调制方案的新型五电平多电平逆变器电压平衡

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131230

Mohane Selvaraj, A. Dekka, D. Ronanki, A. R. Beig

{"title":"Voltage Balancing of a New Five-Level Multilevel Inverter with a Modified Carrier Pulse Width Modulation Scheme","authors":"Mohane Selvaraj, A. Dekka, D. Ronanki, A. R. Beig","doi":"10.1109/APEC43580.2023.10131230","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131230","url":null,"abstract":"The advanced multilevel inverters are designed with floating capacitors to increase their output voltage levels. For a reliable operation, these inverters require an efficient voltage balancing algorithm to control the voltage of floating capacitors at rated values. Typically, the balancing algorithm uses redundancy states and is implemented with the conventional multi-carrier pulse width modulation schemes. However, the inverter structure and load power factor affect the balancing ability of the conventional methods. In this article, the balancing algorithm based on a modified multi-carrier based modulation technique is proposed for a new five-level multilevel inverter. In the proposed modified approach, the carriers are distributed non-uniformly throughout the carrier space leading to an output voltage with overlapped voltage steps. With this philosophy, the redundancy states can be utilized effectively in achieving the balancing of floating capacitor voltages under a wide range of power factors. Also, the floating capacitor voltage ripples are minimized compared with the conventional methods. The performance comparison of the proposed and conventional methodologies at different load power factors are presented using the simulation tools.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128946299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage 基于数据表参数的SiC MOSFET分析建模，考虑了动态传递特性和通道电阻对漏极电压的依赖性

2023 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2023-03-19 DOI: 10.1109/APEC43580.2023.10131160

Hemanth Varun Betha, M. Odavic, K. Atallah

{"title":"Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage","authors":"Hemanth Varun Betha, M. Odavic, K. Atallah","doi":"10.1109/APEC43580.2023.10131160","DOIUrl":"https://doi.org/10.1109/APEC43580.2023.10131160","url":null,"abstract":"Silicon Carbide devices enable high power density power electronic converters due to their lower junction capacitances and higher thermal conductivity. Analytical models of these devices help in estimating the switching dynamics, losses and current/voltage stresses on the devices. The dynamics of SiC MOSFET current during turn ON is impacted by the drain voltage it is switched at, due to the drain induced barrier lowering (DIBL) effect. This is however ignored in the existing analytical models available in the literature. This paper thus proposes and develops a new analytical modelling approach that models this effect by relying only on the datasheet parameters, thereby avoiding the need for expensive and time-consuming experimental methods. Dynamic channel resistance is also modelled as a function of drain voltage. The analysis reveals the impact of drain voltage on damping time of high frequency drain current oscillations during turn ON. An experimental double pulse test (DPT) setup using 1.2kV SiC MOSFET (C3MOOI0602K) and Schottky diode (C4D40120D) is built to verify the findings. Further, the accuracy of the proposed model is compared against the most detailed existing model in the literature.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131025626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0