用于高频转换器应用的先进GaN IPM与薄衬底

Sourish S. Sinha, Tzu-Hsuan Cheng, Keval Parmar, D. Hopkins
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引用次数: 0

摘要

挖掘宽带隙(WBG)半导体器件的潜力需要增强的电气和热封装。本文提出了一种基于gan的半桥集成电源模块(IPM),包括栅极驱动器,驱动器帽和去耦帽,用于500kHz/0.8kW变换器应用。介绍了一种密集的双面冷却IPM的设计、制造和实验表征,该IPM采用先进的环氧树脂绝缘金属衬底(eIMS),具有120 μ m薄电介质,用于400V/ 8.3ns高边率开关(即以最高感兴趣频率(HFI)的dv/dt$)。共模(CM)电容已优化。通过ANSYS仿真验证了该模块的热性能,夹层基板结构的对称性保证了温度分布和应力管理的对称性。研制了一种低隔离电容双脉冲测试(DPT)实验板,以表征其最大动态性能。最后,对CM对全桥变换器应用的影响进行了评估,以显示薄衬底封装在工业功率水平下应用的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates
Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.
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