2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)最新文献_第3页

Optimization of Interdigitated Back Contact Silicon Heterojunction solar cells (IBC-SiHJ) 交错背接触硅异质结太阳能电池(IBC-SiHJ)的优化设计

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997623

N. Berrouba-Tani, K. Ghaffour

{"title":"Optimization of Interdigitated Back Contact Silicon Heterojunction solar cells (IBC-SiHJ)","authors":"N. Berrouba-Tani, K. Ghaffour","doi":"10.1109/NAWDMPV.2014.6997623","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997623","url":null,"abstract":"This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120935459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of doping profile of high doped emitters on solar cells performances 高掺杂发射体的掺杂分布对太阳能电池性能的影响

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997610

H. Ghembaza, A. Zerga, R. Saim

引用次数: 0

Electrical simulation of organic solar cell based on CuPc/C60 heterojunctions 基于CuPc/C60异质结的有机太阳能电池电学仿真

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997618

I. Malti, N. C. Sari

引用次数: 1

Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer 通过插入新型背表面场(SnS)层提高CIGS薄膜太阳能电池的效率

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997611

S. Benabbas, H. Heriche, Z. Rouabah, N. Chelali

引用次数: 12

Modeling and optimization of a capacitive humidity sensor response in MEMS technology 电容式湿度传感器的MEMS响应建模与优化

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997606

N. Benmoussa, A. Benichou, N. Medjahdi, K. Rahmoun

{"title":"Modeling and optimization of a capacitive humidity sensor response in MEMS technology","authors":"N. Benmoussa, A. Benichou, N. Medjahdi, K. Rahmoun","doi":"10.1109/NAWDMPV.2014.6997606","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997606","url":null,"abstract":"The aim of this paper is the study of a capacitive humidity sensor in MEMS technology. It is designed primarily of two armatures; the first one is full, the other is lamellar thus facilitating the passage of water vapor. A layer of dielectric polymer sandwiched between two electrodes absorbs this vapor. The relative permittivity of the dielectric varies with humidity. The study is, in a first step, to determine the static response of the capacitive humidity sensor designed as shown before. In a second step, a finite element simulation using COMSOL software was done to determine the polymer giving a better absorption. Therefore several polymers have been studied. The study showed that the layer made of benzocyclobutene gives better absorption. Another simulation was done to determine the optimal geometric structure also leads to better absorption and a very short response time. The study showed that the structure consists of two electrodes 2 μm wide and spaced 2 μm (called structure2×2) leads to better absorption when it was compared with structures 3×3, 4×4 and 5×5.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124374581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Characterization and dynamic of water in alkali homoionic montmorillonites 碱性同离子蒙脱石中水的表征及动力学

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997593

M. Belhocine, A. Haouzi, G. Bassou, J. Bantignies, D. Maurin, F. Henn

{"title":"Characterization and dynamic of water in alkali homoionic montmorillonites","authors":"M. Belhocine, A. Haouzi, G. Bassou, J. Bantignies, D. Maurin, F. Henn","doi":"10.1109/NAWDMPV.2014.6997593","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997593","url":null,"abstract":"The objective of this work is to study the effect of interlayer cations on the mechanism of adsorption-desorption of water in the case of a montmorillonite exchanged by alkali metals. This is done through thermodynamic measurements, i.e. isotherms of adsorption and desorption of water. The raw material is subjected to purification treatment by using the sedimentation followed by cationic exchange. IR and XRD analysis of the dry state confirm that the treatment used for obtaining homoionic clays does not deteriorate their structure. The value of the interlayer distance d001obtained from XRD depends directly on the cation radius. IR spectra recorded on our montmorillonite reveals that the area ratio νOH/νSiO peaks which corresponds to the amount of adsorbed water under room atmosphere follows the sequence: K >Rb> Cs > Li > Na In accordance the evolution observed for the desorption enthalpies. The adsorption and desorption isotherms show that the nature of the compensating cation considerably changes the adsorbed / desorbed amount for a given water relative pressure. Thus, the total amount of water adsorbed at P/P0 = 0.5 follows the same sequence.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117196279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

High-performance solar-blind photodetector based on AlGaN/GaN heterostructure 基于AlGaN/GaN异质结构的高性能太阳盲光电探测器

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-12-29 DOI: 10.1109/NAWDMPV.2014.6997616

Z. Allam, A. Hamdoune, A. Soufi, Chahrazed Boudaoud

{"title":"High-performance solar-blind photodetector based on AlGaN/GaN heterostructure","authors":"Z. Allam, A. Hamdoune, A. Soufi, Chahrazed Boudaoud","doi":"10.1109/NAWDMPV.2014.6997616","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997616","url":null,"abstract":"Development of wide-band gap III-nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light-emitting diodes (LEDs). In parallel, III-nitrides have been studied extensively for use in ultraviolet (UV) photodetectors because they offer intrinsic visible- or solar-blind detection, which would eliminate the need for expensive and efficiency-limiting optical filters to remove out-of-band visible or solar photons. Such detectors would be well suited for numerous applications in the defense, commercial, and scientific arenas, including covert space-to-space communications, early missile-threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy. In this paper, we considered an AlGaN/GaN photodetector grown on sapphire substrate. We studied I-V characteristics and we simulated the current as a function of voltage in darkness; we got a dark current of order 10-7 for a concentration of 1e19 cm-3. In the spectral response, we obtained a high current and flux spectral density for a wavelength of 350 nm for different x.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128919727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Numerical study on effect of mass flow rate and porosity on the thermal performance in the solar sensor with porous absorber 质量流量和孔隙率对多孔吸收体太阳能传感器热性能影响的数值研究

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-10-01 DOI: 10.1109/NAWDMPV.2014.6997615

A. Amrani, R. Saim

引用次数: 0

GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction 高效光电器件中氮层化GaAs-δ:第一性原理预测

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-10-01 DOI: 10.1109/NAWDMPV.2014.6997622

N. Madini, K. Rahmoun, M. Côté

{"title":"GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction","authors":"N. Madini, K. Rahmoun, M. Côté","doi":"10.1109/NAWDMPV.2014.6997622","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997622","url":null,"abstract":"Intense solar radiation and arid region in Algeria should be a promising issue to upgrade eco-friendly energy source alternative and promote climate change lute. For this purpose, we propose first principle investigation of the structural and the electronic bulk properties of the promising GaAsN alloy in delta-layer configuration within the aid of density functional theory framework. The simulation has been done to estimate the adequacy of this quantum design for optoelectronic and high efficiency photovoltaic applications. We particularly predict the evolution of the δ-layered GanAs1-nN1 lattice constant for x=1/n in the range of 0<;x≤1. Our approach exhibits excellent concordance in structural properties and electronic structure within the experimental data for the parent binaries GaAs and GaN. The calculations show that GaAsN should be lattice matched to panoply of solicited semi-conductors for photovoltaic technologies such as GaAs, GaAlAs, Ge and Si. Moreover, the electronic structure and the band gap calculation of the chosen concentration x=1/10 predict that delta-layer design of GaAsN could be an interesting issue for telecommunication devices dedicated to transmission over optical fiber and it should be good absorber material for high efficiency solar cells power conversion by joining a band gap energies suitable with the most intense solar spectrum.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129183891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical properties of ZnO thin films prepared by Sol- gel method 溶胶-凝胶法制备ZnO薄膜的光学性质

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV) Pub Date : 2014-10-01 DOI: 10.1109/NAWDMPV.2014.6997617

N. B. Khelladi, N. C. Sari

引用次数: 0