交错背接触硅异质结太阳能电池(IBC-SiHJ)的优化设计

N. Berrouba-Tani, K. Ghaffour
{"title":"交错背接触硅异质结太阳能电池(IBC-SiHJ)的优化设计","authors":"N. Berrouba-Tani, K. Ghaffour","doi":"10.1109/NAWDMPV.2014.6997623","DOIUrl":null,"url":null,"abstract":"This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of Interdigitated Back Contact Silicon Heterojunction solar cells (IBC-SiHJ)\",\"authors\":\"N. Berrouba-Tani, K. Ghaffour\",\"doi\":\"10.1109/NAWDMPV.2014.6997623\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.\",\"PeriodicalId\":149945,\"journal\":{\"name\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAWDMPV.2014.6997623\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAWDMPV.2014.6997623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文研究了基于n型晶体硅(c-Si)衬底的交叉指状背接触(IBC)硅异质结(HJ)太阳能电池的研制与优化。互指背触点硅异质结(IBC-SHJ)太阳能电池由于表面钝化和异质结接触,具有高开路电压(VOC)的潜力,并且由于全背触点设计,具有高短路电流密度(JSC)的潜力。后表面的非晶硅(a-Si:H)缓冲层改善了表面钝化,从而改善了VOC和JSC,但降低了填充因子(FF),呈“S”型J-V曲线。利用“Silvaco-ATLAS”进行的二维(2D)模拟表明,低FF与异质界面处的价带偏移(能垒)有关。提出了两种提高效率的方法:(1)调整触点间距;(2)减小触点与发射极之间的间隙区域。通过生成AM1.5光照下的电流-电压(I-V)曲线,测试了这些参数的影响,从而提取出电池的输出特性,即开路电压(VOC)、短路电流密度(JSC)、填充系数(FF)和转换效率η。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of Interdigitated Back Contact Silicon Heterojunction solar cells (IBC-SiHJ)
This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信