高掺杂发射体的掺杂分布对太阳能电池性能的影响

H. Ghembaza, A. Zerga, R. Saim
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引用次数: 0

摘要

在本文中,我们评估了低压扩散管炉的吞吐量,以实现均匀的工业磷发射体p型硅太阳能电池。低压管式炉的设计目的是获得发射极标准片材电阻约60欧姆/平方,晶圆均匀度小于3%。描述了作为扩散前驱体的POCl3和O2气体,并研究了所谓的扩散炉的热行为。为了获得更好的晶圆间温度分布,我们从前人的研究中导出了一个控制模型。我们的结果证明,我们可以通过操纵和优化掺杂谱,并通过增加多个温度坡道来实现POCl3的扩散,从而达到特定的电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of doping profile of high doped emitters on solar cells performances
In this paper, we evaluate the throughput of a low-pressure diffusion tube furnace in order to realize uniform industrial phosphorous emitters p-type silicon solar cells. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 ohm/sq and wafer uniformity less than 3 %. POCl3 and O2 gas as a precursor for diffusion is described and the thermal behavior of the so called diffusion furnace is studied. A control model has been derived from some previous works to achieve better wafer to wafer temperature distribution. Our result proves that we can target certain electrical properties only by the manipulation and optimization of doping profile and by the addition of multiple temperature ramps to achieve POCl3 diffusion.
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