基于AlGaN/GaN异质结构的高性能太阳盲光电探测器

Z. Allam, A. Hamdoune, A. Soufi, Chahrazed Boudaoud
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引用次数: 5

摘要

自20世纪90年代以来,宽带隙iii -氮化物半导体的发展一直是一个备受关注的主题,主要是由于对蓝色激光器和高亮度发光二极管(led)的追求。同时,iii -氮化物已被广泛研究用于紫外(UV)光电探测器,因为它们提供固有的可见光或太阳盲检测,这将消除对昂贵和效率限制的光学滤光片的需要,以去除带外可见光或太阳光子。这种探测器将非常适合在国防、商业和科学领域的众多应用,包括隐蔽的空间对空间通信、早期导弹威胁探测、化学和生物威胁探测和光谱学、火焰探测和监测、紫外线环境监测和紫外线天文学。在本文中,我们考虑了一种生长在蓝宝石衬底上的AlGaN/GaN光电探测器。我们研究了I-V特性,并在黑暗中模拟了电流作为电压的函数;我们得到浓度为1e19 cm-3的暗电流为10-7阶。在光谱响应中,我们在波长为350 nm的不同x下获得了较高的电流和通量光谱密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-performance solar-blind photodetector based on AlGaN/GaN heterostructure
Development of wide-band gap III-nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light-emitting diodes (LEDs). In parallel, III-nitrides have been studied extensively for use in ultraviolet (UV) photodetectors because they offer intrinsic visible- or solar-blind detection, which would eliminate the need for expensive and efficiency-limiting optical filters to remove out-of-band visible or solar photons. Such detectors would be well suited for numerous applications in the defense, commercial, and scientific arenas, including covert space-to-space communications, early missile-threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy. In this paper, we considered an AlGaN/GaN photodetector grown on sapphire substrate. We studied I-V characteristics and we simulated the current as a function of voltage in darkness; we got a dark current of order 10-7 for a concentration of 1e19 cm-3. In the spectral response, we obtained a high current and flux spectral density for a wavelength of 350 nm for different x.
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