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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics最新文献

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Temperature dependent fatigue in ferroelectric PZT thin films 铁电PZT薄膜的温度依赖性疲劳
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602790
E. N. Paton, Said Mansour, A. Bement
{"title":"Temperature dependent fatigue in ferroelectric PZT thin films","authors":"E. N. Paton, Said Mansour, A. Bement","doi":"10.1109/ISAF.1996.602790","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602790","url":null,"abstract":"The rate of electrical fatigue at different temperatures was measured for lead zirconate titanate capacitors with the composition Pb(Zr/sub .60/Ti/sub .40/)O/sub 3/. Results showed that a temperature rise contributes to an increasing rate of logarithmic decay in the fatigue profile. We distinguish two thermally dependent stages during fatigue; each plotted as separate Arrhenius relationships. The first stage has an experimentally measured activation energy of 0.22 eV while the second stage has a measured value of 0.042 eV. The physical basis for these activation energies has not been identified due to the complexity of interactions occurring during the switching reversals. Even so, the measured values give some indication of the types of defects and the mechanisms responsible in each stage.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"52 1","pages":"467-470 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81011821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
BaSrTiO/sub 3/ thin films for integrated high frequency capacitors 集成高频电容器用BaSrTiO/ sub3 /薄膜
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602718
G. Stauf, S. Bilodeau, R. Watts
{"title":"BaSrTiO/sub 3/ thin films for integrated high frequency capacitors","authors":"G. Stauf, S. Bilodeau, R. Watts","doi":"10.1109/ISAF.1996.602718","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602718","url":null,"abstract":"The complex oxide dielectric Ba/sub 1-x/Sr/sub x/TiO/sub 3/ (BST) has recently been studied intensively for DRAM applications. Another significant nearer term application for which BST may be suited is replacement of discrete capacitors now attached to advanced IC's. Specific devices include bypass, decoupling, and switched filter capacitors, often operated at high frequencies. With current SiO/sub 2/ based dielectrics such integrated capacitors may take up from 20% to 50% of the device area; use of higher dielectric constant BST could reduce this by at least a factor of 10. We will discuss properties of MOCVD-grown BST which relate to these capacitor applications, including second order dielectric nonlinearity and leakage currents at useful device operating voltages (3 V). Dielectric constant, nonlinearity and breakdown voltages are found to have a strong dependence on deposition temperature of BST films, so optimum processing conditions will depend on the end device application.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"24 1","pages":"103-106 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91428656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
High performance capacitor dielectrics from chemically prepared powders 由化学制备的粉末制成的高性能电容器电介质
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602774
I. Burn
{"title":"High performance capacitor dielectrics from chemically prepared powders","authors":"I. Burn","doi":"10.1109/ISAF.1996.602774","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602774","url":null,"abstract":"Dielectric and metal powders have been developed using chemical precipitation and coating technology to produce materials suitable for next generation multilayer ceramic capacitor technology. These materials address the issues of electrode delamination in parts with many thin dielectric layers, as well as the problem of increasing dissipation factor with decreasing layer thickness.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"230 ","pages":"397-400 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91449020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation effects on optical and dielectric properties of PLZT and PSN ceramics 辐射对PLZT和PSN陶瓷光学和介电性能的影响
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598106
A. Sternberg, L. Shebanovs, E. Birks, A. Spule, P. Kulis, H. Weber, H. Klima, F. Sauerzopf, U. Ulmanis
{"title":"Radiation effects on optical and dielectric properties of PLZT and PSN ceramics","authors":"A. Sternberg, L. Shebanovs, E. Birks, A. Spule, P. Kulis, H. Weber, H. Klima, F. Sauerzopf, U. Ulmanis","doi":"10.1109/ISAF.1996.598106","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598106","url":null,"abstract":"The effects of /spl gamma/-ray, electron and neutron (fluences up to 2.10/sup 18/ n/cm/sup 2/) irradiation on extinction spectra and dielectric characteristics (hysteresis, thermal and frequency dependencies of dielectric permittivity /spl epsi/ and losses) in PLZT X/65/35 (X=4.5-11 at%) and PbSc/sub 0.5/Nb/sub 0.5/O/sub 3/ ceramics are analyzed with respect to composition state of phase, and polarization by means of annealing in isochronic and prolonged time regimes. A gradual shift of extinction edge to longer wavelengths, reduction of polarization and /spl epsi/ values, and a progressive diffusion of the phase transition with the increase of irradiation fluence are observed in neutron irradiated PLZT ceramics.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"13 1","pages":"667-670 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77854399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric and ferroelectric properties of 1-3 composites containing thin PZT-fibers 含薄pzt纤维的1-3复合材料的介电和铁电性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598042
W. Watzka, S. Seifert, H. Scholz, D. Sporn, A. Schonecker, L. Seffner
{"title":"Dielectric and ferroelectric properties of 1-3 composites containing thin PZT-fibers","authors":"W. Watzka, S. Seifert, H. Scholz, D. Sporn, A. Schonecker, L. Seffner","doi":"10.1109/ISAF.1996.598042","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598042","url":null,"abstract":"PbZr/sub 0.53/Ti/sub 0.47/O/sub 3/ (PZT)-fibers were prepared by a sol-gel route and appropriate thermal treatment. The sintered fibers show negligible porosity of about 100 nm in diameter and a narrow grain size distribution, the grain sizes ranging from 1 to 5 /spl mu/m depending on the sintering conditions. PZT-fiber/epoxy composites with 1-3 connectivity were prepared. Fiber volume fractions were adjusted from 20 to 70 vol.-%. Ferroelectric properties of composites with thicknesses between 0.05 and 0.5 mm are about 10 /spl mu/C/cm/sup 2/ for the remanent polarization and about 15 kV/mm for the coercive field. During longtime cycling of up to 10/sup 6/ cycles P/sub r/ nearly remains constant, E/sub c/ increases by 50%. A coupling coefficient k/sub t/ of up to 55% was measured. Perpendicular to the fiber direction a P/sub r/ of 0.8 /spl mu/C/cm/sup 2/ and an E/sub c/ of 2 kV/mm were measured.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"21 1","pages":"569-572 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82358012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
The effect of annealing temperature on the formation of SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) thin films 退火温度对SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT)薄膜形成的影响
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598055
D. Ravichandran, K. Yamakawa, R. Roy, A. Bhalla, S. Trolier-McKinstry, R. Guo, L. Cross
{"title":"The effect of annealing temperature on the formation of SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) thin films","authors":"D. Ravichandran, K. Yamakawa, R. Roy, A. Bhalla, S. Trolier-McKinstry, R. Guo, L. Cross","doi":"10.1109/ISAF.1996.598055","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598055","url":null,"abstract":"In this paper we report on synthesis of SBT thin-films by sol-gel processing. Sr metal, Bi, 2-ethyl hexanoate and Ta-ethoxide were used as precursors. Thin-films with nominal composition SrBi/sub 2/Ta/sub 2/O/sub 9/ and SBT +10% excess Bi content were made. Films were annealed at various temperatures to study the microstructure, crystallization temperature and the polarization values. Good crystallization of SBT was obtained by annealing at 700/spl deg/C-2 hrs, independent of the Bi content in the films. Films annealed in oxygen atmosphere at 800/spl deg/C-2 hrs did not show any significant change in the polarization value. Crack free films were made with film thicknesses of 0.4 /spl mu/m. Films annealed at 800/spl deg/C-2 hrs showed a grain size of /spl sim/0.2 /spl mu/m, and reasonably good polarization values of 5 /spl mu/C/cm/sup 2/. In contrast, films prepared with 10% excess Bi showed a very fine grain size <0.1 /spl mu/m with a lower polarization values of 1.5 /spl mu/C/cm/sup 2/.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"137 1","pages":"601-603 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78196159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoelectric and pyroelectric microsystems based on ferroelectric thin films 基于铁电薄膜的压电和热释电微系统
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602725
P. Muralt
{"title":"Piezoelectric and pyroelectric microsystems based on ferroelectric thin films","authors":"P. Muralt","doi":"10.1109/ISAF.1996.602725","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602725","url":null,"abstract":"The paper reviews different aspects of deposition, integration, and device fabrication of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) films for application in ultrasonic micromotors and pyroelectric infra-red detectors. The deposition of such films and the principal processes for their integration onto silicon substrates are fairly well mastered. Current efforts concentrate on tailoring the film properties for the various applications, and on optimization of the device designs and patterning processes.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"77 1","pages":"145-151 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76618839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Production of continuous piezoelectric fibers for sensor/actuator applications 生产用于传感器/执行器应用的连续压电纤维
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598163
J. D. French, G. Weitz, J. E. Luke, R. Cass, B. Jadidian, V. Janas, A. Safari
{"title":"Production of continuous piezoelectric fibers for sensor/actuator applications","authors":"J. D. French, G. Weitz, J. E. Luke, R. Cass, B. Jadidian, V. Janas, A. Safari","doi":"10.1109/ISAF.1996.598163","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598163","url":null,"abstract":"ACI's Viscous-Suspension-Spinning Process (VSSP) has been refined for the production of piezoelectric fibers for use in transducer, sensor/actuator, and structural control devices. This process utilizes a fugitive carrier (cellulose) to form PZT powder into useful green fiber. The effect of the starting powder dispersion and spinning conditions, such as cellulose dehydration and regeneration in the spin bath, on the final green fiber quality are discussed. Careful control of the dispersion and the spinning conditions produces continuous green fiber of sufficient handling strength to weave into plies or cut for use in \"pick-and-place\" layups. These lay-ups are then fired and resin-impregnated for the production of composites suitable for hydrophone or transducer applications. Recent results have yielded composites (25 vol% PZT) with d/sub 33/=340, pC/N, K=470, and g/sub 33/=100 mV/spl middot/m/N.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"9 3 1","pages":"867-870 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77883679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Low-sintering PZT-ceramics for advanced actuators 用于高级执行器的低烧结pzt陶瓷
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602746
A. Schonecker, H. Gesemann, L. Seffner
{"title":"Low-sintering PZT-ceramics for advanced actuators","authors":"A. Schonecker, H. Gesemann, L. Seffner","doi":"10.1109/ISAF.1996.602746","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602746","url":null,"abstract":"Much effort has been made to reduce sintering temperature T/sub s/ of PZT powders, driven by the demands of multilayer actuator fabrication. Suppression of PbO-evaporation and usability of cost effective electrode materials have been the main reasons. We succeeded in reducing T/sub s/ of soft-PZT down to 780/spl deg/C by creating liquid phases during sintering. Consequently, the fabrication of components with high surface to volume ratio became possible. For example, dense PZT thick films (thickness 50...150 /spl mu/m) on alumina, showing high remanent polarization (20 /spl mu/C/cm/sup 2/) and high mechanical strength were prepared. In order to raise operation frequency and temperature the development of low-sintering hard-PZT has been investigated. This task turned out to be more difficult, because most eutectic additives tend to reduce Curie temperature T/sub c/ likewise. Nevertheless, a special modification has been found giving a hard-PZT (i.e. T/sub c/=350/spl deg/C) that densifies already at T/sub s/=1050/spl deg/C/2h. The paper reports on our compositional development of low-sintering PZT-ceramics together with its impact on the design and performance of advanced actuators.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"24 1","pages":"263-266 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73960237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Contact resistance in PTC thermistors PTC热敏电阻中的接触电阻
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598196
C.W. Park, K. Cho, J. Lee, H. Lee
{"title":"Contact resistance in PTC thermistors","authors":"C.W. Park, K. Cho, J. Lee, H. Lee","doi":"10.1109/ISAF.1996.598196","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598196","url":null,"abstract":"The electrode resistance of semiconducting PTC BaTiO/sub 3/ ceramic was studied in same detail. Commercial In-Ag paste, In-Ga alloy, and electroless plated Ni as well as evaporated Al with and without Pt overcoat layer mere chosen as electrode. The contact resistance of electroded samples at or above room temperature was determined using both dc resistance and ac impedance measurements. The aging of contact resistance under cyclic loading from -10 to 85/spl deg/C was also monitored for the prolonged period of time. The effect of heat treatment and protective coating on the stability of Al electrode was determined. Commercial In-Ag paste showed the excellent stability against contact resistance degradation. However, the contact resistance of Al electrode during aging was strongly dependent on the annealing condition and the presence of protective layer.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"51 1","pages":"995-998 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75632112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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