Japanese Journal of Applied Physics最新文献

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Deep learning model for predicting the spatial distribution of binding energy from atomic configurations 从原子构型预测结合能空间分布的深度学习模型
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6e8e
Seiki Saito, Shingo Sato, Hiroaki Nakamura, Chako Takahashi, Keiji Sawada, Kazuo Hoshino, Masahiro Kobayashi, Masahiro Hasuo
{"title":"Deep learning model for predicting the spatial distribution of binding energy from atomic configurations","authors":"Seiki Saito, Shingo Sato, Hiroaki Nakamura, Chako Takahashi, Keiji Sawada, Kazuo Hoshino, Masahiro Kobayashi, Masahiro Hasuo","doi":"10.35848/1347-4065/ad6e8e","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e8e","url":null,"abstract":"Understanding plasma-material interaction is crucial for achieving steady-state operation of magnetic confinement fusion devices. Kinetic Monte Carlo (kMC) simulation is a powerful tool for investigating the motion of atoms in the plasma facing materials under the influence of this interaction. To predict trapping sites and migration energies necessary for kMC simulations, we developed a deep learning model based on pix2pix for predicting the spatial distribution of binding energy. Results show that the model can reproduce spatial distributions similar to the true values. However, larger errors occur in regions with steep value gradients.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing 利用高压退火对锗中离子注入 p 型和 n 型掺杂物的活化和扩散进行研究
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6ed6
Tai-Chen Kuo, Wen-Hsi Lee, Michael Ira Current
{"title":"Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing","authors":"Tai-Chen Kuo, Wen-Hsi Lee, Michael Ira Current","doi":"10.35848/1347-4065/ad6ed6","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6ed6","url":null,"abstract":"In this study, we investigate the effectiveness of high-pressure annealing (HPA) compared to microwave annealing (MWA) in activating n-type and p-type dopants in germanium. For phosphorus dopants, HPA at 500 °C significantly enhances the activation level, resulting in a reduction of sheet resistance to 120.1 ohms sq.<sup>−1</sup> and a maximum active concentration of up to 5.76 × 10<sup>19</sup> P cm<sup>−3</sup>. Similarly, for boron dopants, HPA at 800 °C reduces the sheet resistance to 80.6 ohms sq.<sup>−1</sup> and achieves a maximum active concentration that maintains effective doping profiles. Transmission electron microscopy images reveal that the amorphous layers implanted with phosphorus and boron are significantly reduced, indicating that HPA is more effective in achieving solid-phase epitaxial regrowth compared to MWA. HPA demonstrates superior performance in minimizing dopant diffusion and reducing sheet resistance for both phosphorus and boron dopants, making it a preferable method for high-temperature annealing in germanium-based devices.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma sources sputtering nanoscale contaminants with low-energy ion flux on front-end mirrors in ITER optical diagnostics 等离子源在热核实验堆光学诊断前端反射镜上溅射低能量离子通量的纳米级污染物
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6e90
Andrey Ushakov, Ad Verlaan, Ulf Stephan, Olaff Steinke, Cederik Meekes, André Rijfers, Peter Giesen, Eiichi Yatsuka, Maarten de Bock, Michele Bassan, Lucas Moser, Masahito Yokoyama, Erik van Beekum, Shobhit Yadav
{"title":"Plasma sources sputtering nanoscale contaminants with low-energy ion flux on front-end mirrors in ITER optical diagnostics","authors":"Andrey Ushakov, Ad Verlaan, Ulf Stephan, Olaff Steinke, Cederik Meekes, André Rijfers, Peter Giesen, Eiichi Yatsuka, Maarten de Bock, Michele Bassan, Lucas Moser, Masahito Yokoyama, Erik van Beekum, Shobhit Yadav","doi":"10.35848/1347-4065/ad6e90","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e90","url":null,"abstract":"New plasma sources are proposed to clean optical mirrors in diagnostic instruments of the ITER experiment considering RF discharges operating at low pressures (1–10 Pa) in inert gases. There are nearly twenty optical diagnostics where the front-end optical mirrors may require plasma cleaning. The mirrors vary in size and would need up to 400 W in the discharge to form ion fluxes capable of removing Be- and W-containing contaminants to restore the optical performance with tolerable damage to the mirror. The plasma sources suggested to clean contaminants include a vacuum matching circuit placed close to the mirror and a quarter wavelength band stop notch filter when mirror water cooling is needed. Long-term operation stability and cleaning homogeneity may employ a driving frequency variation to tune the circuit and a phase shift for RF voltages to clean two mirrors simultaneously. In this paper, the plasma sources based on 40 MHz RF discharge to clean first mirrors are studied experimentally for two ITER optical instruments: the Edge Thomson Scattering and the Visible Spectroscopy Reference System. Frequency tuning and phase shifting are studied in realistic configurations prototyping diagnostic port plug geometries.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relationship between the surface free energy of underlayers and the dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl groups in tetramethylammonium hydroxide aqueous developer 部分受叔丁氧羰基保护的聚对羟基苯乙烯在四甲基氢氧化铵水溶液显影剂中的下层表面自由能与溶解动力学之间的关系
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6f86
Jiahao Wang, Takahiro Kozawa
{"title":"Relationship between the surface free energy of underlayers and the dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl groups in tetramethylammonium hydroxide aqueous developer","authors":"Jiahao Wang, Takahiro Kozawa","doi":"10.35848/1347-4065/ad6f86","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6f86","url":null,"abstract":"In the lithography used for the high-volume production of semiconductor devices, the photoresist film becomes thin with the reduction in pattern size to prevent the pattern collapse due to the surface tension of rinsing liquids. The interfacial effect becomes strong with the reduction in photoresist film thickness. In the development process, it is of importance to clarify the relationship between the photoresist and the underlayer for fine patterning. In this study, the dissolution kinetics of poly(4-hydroxystyrene) (PHS) partially protected by <italic toggle=\"yes\">t</italic>-butoxycarbonyl (<italic toggle=\"yes\">t</italic>-Boc) groups in tetramethylammonium hydroxide (TMAH) aqueous solution was found to be related to the surface free energy of the underlayer. The attenuation rate of developer viscosity first decreased and then increased with the polar-to-dispersion component ratio. An inflection point with the lowest rate existed. The TMAH concentration affected not only the attenuation rate but also the ratio of polar to dispersion components at the minimum attenuation rate.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"303 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain sensing based on modal interference spectrum in polarization-maintaining fiber 基于偏振保持光纤模态干涉频谱的应变传感
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-03 DOI: 10.35848/1347-4065/ad6f84
Tomohiro Shiozaki, Ariasu Tamura, Yosuke Mizuno
{"title":"Strain sensing based on modal interference spectrum in polarization-maintaining fiber","authors":"Tomohiro Shiozaki, Ariasu Tamura, Yosuke Mizuno","doi":"10.35848/1347-4065/ad6f84","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6f84","url":null,"abstract":"We investigate a simple structure in which a polarization-maintaining fiber (PMF) is sandwiched between two single-mode fibers (SMFs). By injecting broadband light and observing the modal interference spectrum of the transmitted light in the 870 nm range, we identify a clear shift dependent on the strain applied to the PMF. In addition, we demonstrate that in the same wavelength range, the strain applied to the SMFs before and after the PMF does not influence the interference spectrum. This result confirms that only the PMF segment exhibits strain sensitivity.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of hot carrier instability in a floating body cell 浮体电池中热载流子不稳定性分析
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-03 DOI: 10.35848/1347-4065/ad69eb
Hiroomi Nakajima, Tomoaki Shino, Hironobu Furuhashi, Jun Nishimura, Tomoki Higashi, Katsuyuki Fujita, Kosuke Hatsuda, Ryo Fukuda, Takeshi Kajiyama
{"title":"Analysis of hot carrier instability in a floating body cell","authors":"Hiroomi Nakajima, Tomoaki Shino, Hironobu Furuhashi, Jun Nishimura, Tomoki Higashi, Katsuyuki Fujita, Kosuke Hatsuda, Ryo Fukuda, Takeshi Kajiyama","doi":"10.35848/1347-4065/ad69eb","DOIUrl":"https://doi.org/10.35848/1347-4065/ad69eb","url":null,"abstract":"Hot carrier instability (HCI) in a floating body cell (FBC) has been investigated. The FBC is a dynamic random-access memory (DRAM) made entirely of a silicon-on-insulator (SOI)-MOS without a capacitor. For FBC realization, there is an influence of a physical phenomenon different from the normal MOS because of its structural and operational characteristics of SOI-MOS. The difference between bulk and SOI-MOS is not yet clear, especially for HCI. In this study, we clarified the importance of the structural and geometrical factors of the FBC cell transistor and the SOI-specific floating body effect in the HCI regime of FBCs.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"37 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15 4H-SiC 和 2H-GaN 对原子序数为 12 至 15 的低速 〈 0001〉 沟道离子的电子阻挡力比较
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-02 DOI: 10.35848/1347-4065/ad6bda
Kazuhiro Mochizuki, Tomoaki Nishimura, Tomoyoshi Mishima
{"title":"Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15","authors":"Kazuhiro Mochizuki, Tomoaki Nishimura, Tomoyoshi Mishima","doi":"10.35848/1347-4065/ad6bda","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6bda","url":null,"abstract":"Measured electronic stopping powers along the 〈0001〉 direction (<italic toggle=\"yes\">S</italic>\u0000<sub>e</sub>) of 4H-SiC and 2H-GaN for low-velocity <sub>12</sub>Mg, <sub>13</sub>Al, and <sub>15</sub>P ions were reproduced with the modified El-Hoshy−Gibbons model that reduced not only the atomic numbers of projectiles and targets but also the impact parameter for small-angle collisions (based on the Kohn−Sham radii of projectiles) in the Firsov model. Unreported <italic toggle=\"yes\">S</italic>\u0000<sub>e</sub> of 2H-GaN for low-velocity <sub>14</sub>Si ions was then predicted to be between <italic toggle=\"yes\">S</italic>\u0000<sub>e</sub> of 2H-GaN for <sub>12</sub>Mg ions and <italic toggle=\"yes\">S</italic>\u0000<sub>e</sub> of 4H-SiC for <sub>13</sub>Al ions, indicating not only Al and Mg but also Si channeling being usable for fabricating cost-effective superjunctions.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the impact of environmental conditions on the mechanical properties of thin-film copper wafers 研究环境条件对薄膜铜晶片机械性能的影响
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-02 DOI: 10.35848/1347-4065/ad6bd9
Quoc-Phong Pham, Le Ngoc Quynh Hoa, Muhamad Amirul Haq, Le Nam Quoc Huy
{"title":"Investigation of the impact of environmental conditions on the mechanical properties of thin-film copper wafers","authors":"Quoc-Phong Pham, Le Ngoc Quynh Hoa, Muhamad Amirul Haq, Le Nam Quoc Huy","doi":"10.35848/1347-4065/ad6bd9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6bd9","url":null,"abstract":"Thin-film copper offers excellent film texture for multilevel interconnections in integrated circuit fabrication due to its superior resistance to electromigration and high electrical conductivity. To perform a chemical mechanical planarization process during semiconductor fabrication of copper, it is necessary to have a thorough understanding of the nanomechanical properties of thin-film copper. In this study, thin-film copper and reacted passivation layers on silicon substrate wafers are investigated for their nanomechanical properties under various environmental conditions. The results of this study indicate that thin-film copper passivation layers have different properties in deionized (DI) water and polishing slurry environments compared to thin-film copper exposed to ambient air. Interestingly, variations in temperature within wet environments do not significantly affect the properties of thin-film copper wafers; but changes in properties are largely driven by chemical processes. The insights gained from this study emphasize the significance of considering both the passivation layers and wet environments in semiconductor fabrication processes, which contributes to the advancement of copper-based interconnect materials and optimization of the chemical mechanical planarization process in semiconductor manufacturing.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-doped conducting polyaniline bearing phosphonic acid as a hole transport layer in organic photovoltaics 将含有膦酸的自掺杂导电聚苯胺作为有机光伏的空穴传输层
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-02 DOI: 10.35848/1347-4065/ad7180
Yuhi Inada, Ryota Kuroda, Kahori Kiriyama, Masato Daijo, Toru Amaya, Takeshi Yamao and Toshikazu Hirao
{"title":"Self-doped conducting polyaniline bearing phosphonic acid as a hole transport layer in organic photovoltaics","authors":"Yuhi Inada, Ryota Kuroda, Kahori Kiriyama, Masato Daijo, Toru Amaya, Takeshi Yamao and Toshikazu Hirao","doi":"10.35848/1347-4065/ad7180","DOIUrl":"https://doi.org/10.35848/1347-4065/ad7180","url":null,"abstract":"A self-doped conducting polyaniline was used as a hole transport layer (HTL) in organic photovoltaics (OPVs) [indium tin oxide/HTL/zinc-phthalocyanine/C70/bathocuproine/Al]. This polyaniline was characterized by phosphonic acid neutralized with pyridine (PMAP:Py). The current–voltage characteristics were evaluated and were comparable to those of the devices using a conventional hole transport material, poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS). PMAP:Py-based OPVs stored in both nitrogen and ambient atmosphere had a longer lifetime than PEDOT:PSS-based ones.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two types of cubic components coexisting in the paraelectric phase of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3 revealed by synchrotron radiation X-ray diffraction 通过同步辐射 X 射线衍射揭示弛豫铁电体 Pb(Mg1/3Nb2/3)O3 的副电相中共存的两类立方成分
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-28 DOI: 10.35848/1347-4065/ad6a6b
Kayoko Sakaguchi, Sangwook Kim, Hidehiro Ohwa, Kenji Ohwada, Norihiro Oshime, Shinya Tsukada, Yoshihiro Kuroiwa
{"title":"Two types of cubic components coexisting in the paraelectric phase of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3 revealed by synchrotron radiation X-ray diffraction","authors":"Kayoko Sakaguchi, Sangwook Kim, Hidehiro Ohwa, Kenji Ohwada, Norihiro Oshime, Shinya Tsukada, Yoshihiro Kuroiwa","doi":"10.35848/1347-4065/ad6a6b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6a6b","url":null,"abstract":"The crystal structures of relaxor ferroelectric Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (PMN) have been investigated using synchrotron radiation X-ray powder diffraction. Two different types of cubic components coexist in the paraelectric phase at 600 K. The first is Cubic-I, in which the Pb ion is isotropically off-centered from the corner of the perovskite-type unit cell. The other, Cubic-II, has the Pb ion preferentially off-centered in the &lt;111&gt; directions from the corner. The volume fractions of Cubic-I and Cubic-II are approximately 83% and 17%, respectively. Previous studies have shown that only approximately 20% of PMN transitions to a rhombohedral structure at 100 K. This observation suggests a close relationship between Cubic-II and the rhombohedral structure at low temperatures. The intrinsic structural inhomogeneity observed in the paraelectric phase, such as variations in the disordering behavior of Pb ions, is potentially linked to the relaxor characteristics of PMN.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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