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Japanese Journal of Applied Physics最新文献

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Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure 雾状化学气相沉积 Al2O3/AlGaN/GaN 结构中的界面态密度
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-21 DOI: 10.35848/1347-4065/ad6abe
Keigo Bito, Masaki Ishiguro, Hadirah A. Radzuan, Hikaru Hiroshige, Tomohiro Motoyama, Yusui Nakamura, Joel T. Asubar, Zenji Yatabe
{"title":"Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure","authors":"Keigo Bito, Masaki Ishiguro, Hadirah A. Radzuan, Hikaru Hiroshige, Tomohiro Motoyama, Yusui Nakamura, Joel T. Asubar, Zenji Yatabe","doi":"10.35848/1347-4065/ad6abe","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6abe","url":null,"abstract":"Uniform thickness Al<sub>2</sub>O<sub>3</sub> thin films have been deposited by eco-friendly mist CVD. The obtained Al<sub>2</sub>O<sub>3</sub> film has an optical band gap value of more than 6.5 eV and a refractive index of 1.64 at 633 nm. The combination of capacitance–voltage (<italic toggle=\"yes\">C</italic>–<italic toggle=\"yes\">V</italic>) fitting method with non-linear least-squares algorithm, frequency dispersion, photo-assisted, and proposed reverse bias-assisted <italic toggle=\"yes\">C</italic>–<italic toggle=\"yes\">V</italic> methods revealed interface state densities ranging from 1 × 10<sup>12</sup> to 3 × 10<sup>13</sup> cm<sup>−2</sup>eV<sup>−1</sup> along the mist-Al<sub>2</sub>O<sub>3</sub>/AlGaN interface. These values are comparable to those reported for atomic layer deposited Al<sub>2</sub>O<sub>3</sub> thin films.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"4 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics 研究无直流偏压电介质的镓铌共掺杂钛酸锶钡陶瓷
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-21 DOI: 10.35848/1347-4065/ad690c
Piyush Sapkota, Keito Yagasaki, Ichiro Fujii, Shintaro Ueno, Satoshi Wada
{"title":"Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics","authors":"Piyush Sapkota, Keito Yagasaki, Ichiro Fujii, Shintaro Ueno, Satoshi Wada","doi":"10.35848/1347-4065/ad690c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad690c","url":null,"abstract":"The Ba<sub>0.8</sub>Sr<sub>0.2</sub>Ti<sub>1−2<italic toggle=\"yes\">x</italic>\u0000</sub>Ga<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>Nb<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>O<sub>3</sub> (0 ≤ <italic toggle=\"yes\">x</italic> ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with <italic toggle=\"yes\">x</italic> = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba<sub>0.8</sub>Sr<sub>0.2</sub>Ti<sub>1−2<italic toggle=\"yes\">x</italic>\u0000</sub>Ga<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>Nb<sub>\u0000<italic toggle=\"yes\">x</italic>\u0000</sub>O<sub>3</sub> ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO<sub>3</sub> ceramics. The Ba<sub>0.8</sub>Sr<sub>0.2</sub>Ti<sub>0.20</sub>Ga<sub>0.10</sub>Nb<sub>0.10</sub>O<sub>3</sub> ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm<sup>−1</sup> ≈ 560, and the dielectric constant at 0 kV cm<sup>−1</sup> ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"37 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon nanotube thin film pn junction diode with high-temperature tolerance using chemical dopants 利用化学掺杂剂实现耐高温的碳纳米管薄膜 pn 结二极管
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-20 DOI: 10.35848/1347-4065/ad68e0
Yuki Matsunaga, Haruki Uchiyama, Haruka Omachi, Jun Hirotani
{"title":"Carbon nanotube thin film pn junction diode with high-temperature tolerance using chemical dopants","authors":"Yuki Matsunaga, Haruki Uchiyama, Haruka Omachi, Jun Hirotani","doi":"10.35848/1347-4065/ad68e0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad68e0","url":null,"abstract":"Chemical doping of carbon nanotubes (CNTs) by adsorption with high-temperature-tolerant molecules is required for the fabrication of various types of electronic devices for their performance maintenance under harsh thermal conditions during the fabrication and operation processes. Here, we demonstrate the fabrication of CNT thin film pn junction diodes using a combination of 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile as a p-dopant and a complex salt of potassium hydroxide and benzo-18-crown-6 ether as an n-dopant. The fabricated devices demonstrated a reasonably stable rectifying behavior, even after heating to 200 °C for 300 min.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"39 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on carbon allotrope abrasive particles based on C60 molecule for diamond chemical mechanical polishing 基于 C60 分子的碳同位素磨料颗粒在金刚石化学机械抛光中的应用研究
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-13 DOI: 10.35848/1347-4065/ad59e9
Junpei Takeiri, Keisuke Suzuki, Hiroaki Iura, Taisuke Hantani, Masaki Morii, Hideaki Nisizawa
{"title":"Study on carbon allotrope abrasive particles based on C60 molecule for diamond chemical mechanical polishing","authors":"Junpei Takeiri, Keisuke Suzuki, Hiroaki Iura, Taisuke Hantani, Masaki Morii, Hideaki Nisizawa","doi":"10.35848/1347-4065/ad59e9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad59e9","url":null,"abstract":"In this study, we developed C<sub>60</sub> reactive diamond composite particles for the chemical mechanical polishing (CMP) of diamond substrates by applying the high hardness and high reactivity of the C<sub>60</sub> molecule. When diamond substrates were polished using these C<sub>60</sub> diamond composite particles, the polished surface was found to be superior to that of diamond particles. In addition, when the composite particles were irradiated with ultraviolet light to produce polishing fine particles, the polishing rate was improved by about 30%. These results indicate that the composite nanoparticles that reacted with C<sub>60</sub> have the potential to remove even the hardest of diamond substrates.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"82 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the decomposition performances of Cu-EDTA using pulsed streamer discharge 利用脉冲流放电研究 Cu-EDTA 的分解性能
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-08-05 DOI: 10.35848/1347-4065/ad5921
Most Tauhida Tabassum, Yusuke Nakagawa and Fumiyoshi Tochikubo
{"title":"Investigation of the decomposition performances of Cu-EDTA using pulsed streamer discharge","authors":"Most Tauhida Tabassum, Yusuke Nakagawa and Fumiyoshi Tochikubo","doi":"10.35848/1347-4065/ad5921","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5921","url":null,"abstract":"The decomposition of Cu-Ethylenediaminetetraacetic Acid (Cu-EDTA) using a pulsed streamer discharge in contact with liquid is reported under various experimental conditions, and the efficacy of OH radicals is investigated. The change in Cu-EDTA concentration was characterized using high-performance liquid chromatography. H2O2, NO2−, NO3−, and O3 were detected using water inspection test kits and an UV-visual spectrophotometer. The OH yield was estimated using a colorimetric method with disodium terephthalate. The results revealed that approximately 70% of the Cu-EDTA decomposed with an energy efficiency of 15 mmol kWh−1 in the Ar discharge, whereas the decomposition rate and energy efficiency in the air discharge were 80% and 16 mmol kWh−1, respectively, within 60 min of treatment. The decomposition in Ar was primarily driven by the OH generated during discharge, whereas a combined effect of O3 and OH was observed during air discharge. The discharge-generated OH was the dominant species in Cu-EDTA decomposition in this study.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"21 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of acoustic focusing based on the taboo genetic algorithm 基于禁忌遗传算法的声学聚焦研究
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-31 DOI: 10.35848/1347-4065/ad5b9f
Shulei Gong, Jinyu Zhao, Mengchun Yang, Zihao Liu, Yuan Liu, Yongchang Li
{"title":"A study of acoustic focusing based on the taboo genetic algorithm","authors":"Shulei Gong, Jinyu Zhao, Mengchun Yang, Zihao Liu, Yuan Liu, Yongchang Li","doi":"10.35848/1347-4065/ad5b9f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5b9f","url":null,"abstract":"Acoustic metasurfaces have shown great promise for applications in many acoustic wave modulation fields, while the use of intelligent optimization algorithms has facilitated the design of acoustic metasurfaces. In this paper, we utilize the stop band properties of phononic crystals to design a metasurface that can achieve both transmission focusing and reflection focusing, as well as a metasurface that utilizes acoustic focusing to filter the incident acoustic wave. In order to achieve the best effect, this paper uses the taboo genetic algorithm to optimize the arrangement order of the structural units controlling different focuses in the acoustic metasurface, and the optimization achieves a good focusing effect, which expands the design of acoustic metasurfaces as well as the application scenarios of acoustic focusing.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141870959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Boosting quantum-structured solar cell light absorption through compressively strained superlattices 通过压缩应变超晶格提高量子结构太阳能电池的光吸收能力
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-24 DOI: 10.35848/1347-4065/ad5b32
Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano and Masakazu Sugiyama
{"title":"Boosting quantum-structured solar cell light absorption through compressively strained superlattices","authors":"Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano and Masakazu Sugiyama","doi":"10.35848/1347-4065/ad5b32","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5b32","url":null,"abstract":"The escalating demand for improved energy conversion efficiency in vehicular applications of solar cells underscores the need for innovative solutions. This study focuses on enhancing the current density of GaAs middle cells within conventional Ge-based triple-junction solar cells to realize unprecedented levels of energy conversion efficiency. We introduced a novel superlattice configuration termed a compressively strained superlattice (CSSL) and demonstrated its integration into a p-i-n junction GaAs solar cell, achieving a current density increase of 1.03 mA cm−2 over conventional GaAs solar cells. Prior investigations have explored a strain-balanced superlattice (SBSL) to enhance GaAs middle cell current density. However, our findings establish the superiority of the CSSL over the SBSL in terms of current density improvement, with the CSSL featuring 1.59 times more quantum wells per unit length than the SBSL. This increase in quantum well quantity significantly enhances light absorption efficiency and consequently, the current density.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"19 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141773482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates 在 m 平面 α-Al2O3 衬底上以 MOCVD 生长掺杂硅的α-(AlGa)2O3
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad5cb2
Hironori Okumura and Joel B. Varley
{"title":"MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates","authors":"Hironori Okumura and Joel B. Varley","doi":"10.35848/1347-4065/ad5cb2","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5cb2","url":null,"abstract":"We reported the growth of (AlGa)2O3 layers on (10 ) α-Al2O3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa)2O3 layers. In the Ga2O3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h−1 at 650 °C. Sheet resistance and electrical conductivity of the Ga2O3 layers with a Si concentration of 3 × 1020 cm−3 were 1 × 104 Ω/square and 8.3 S cm−1, respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa)2O3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa)2O3 layers by Si doping (2 × 10−9 S cm−1 in the sample with an Al composition of 56%). Hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141773485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Germanium nanostructures by helium plasma irradiation 通过氦等离子体辐照制造锗纳米结构
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad5afe
Shin Kajita, Quan Shi, Kiho Tabata, Tatsuya Kuwabara, Hirohiko Tanaka and Noriyasu Ohno
{"title":"Germanium nanostructures by helium plasma irradiation","authors":"Shin Kajita, Quan Shi, Kiho Tabata, Tatsuya Kuwabara, Hirohiko Tanaka and Noriyasu Ohno","doi":"10.35848/1347-4065/ad5afe","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5afe","url":null,"abstract":"The effects of helium plasma irradiation, which has been widely studied on metals, on germanium have been experimentally investigated. The irradiation temperature ranges from 430 to 720 K, and the incident ion energy ranges from 30 to 100 eV. From the scanning electron microscope (SEM) observation, it was found that various morphological changes including pits, nanocones, nanopillars, and roughened surfaces occur. The spatial scale of the morphological change was analyzed by applying fast Fourier transform to SEM micrographs. Thermal desorption spectroscopy analysis suggests that He atoms implanted on Ge play major roles in forming roughened surfaces at a surface temperature higher than 500 K.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"67 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141773483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large-scale fabrication of thulium iron garnet film with perpendicular magnetic anisotropy using RF magnetron sputtering 利用射频磁控溅射大规模制造具有垂直磁各向异性的铥铁石榴石薄膜
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad5aff
Marlis N. Agusutrisno, Sora Obinata, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani and Naoto Yamashita
{"title":"Large-scale fabrication of thulium iron garnet film with perpendicular magnetic anisotropy using RF magnetron sputtering","authors":"Marlis N. Agusutrisno, Sora Obinata, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani and Naoto Yamashita","doi":"10.35848/1347-4065/ad5aff","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5aff","url":null,"abstract":"Large-scale fabrication of thulium iron garnet (TmIG) films on gadolinium gallium garnet (GGG) substrates, with a total area of 25 cm2, has been demonstrated by rotating substrate holders during on-axis sputtering. By optimizing the growth parameters based on the pressure and flow rate of the oxygen ratio, a Tm/Fe ratio of 0.65 was obtained, which is close to the stoichiometry of TmIG. The increase in post-annealing temperature has induced the growth of the TmIG structure by the strain of the lattice constant mechanism. At the highest post-annealing temperature, the crystal structure of TmIG (444) and the perpendicular magnetic anisotropy (PMA) were obtained. This result demonstrates the potential method for large-scale fabrication of TmIG film with PMA.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"14 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141773484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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