Japanese Journal of Applied Physics最新文献_第4页

Synthesis of ternary titanium–niobium nitride nanoparticles by induction thermal plasma 利用感应热等离子体合成三元氮化钛铌纳米粒子

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad70be

Yirong Wang, Kaiwen Zhang, Motonori Hirose, Junya Matsuno, Manabu Tanaka, Takayuki Watanabe

{"title":"Synthesis of ternary titanium–niobium nitride nanoparticles by induction thermal plasma","authors":"Yirong Wang, Kaiwen Zhang, Motonori Hirose, Junya Matsuno, Manabu Tanaka, Takayuki Watanabe","doi":"10.35848/1347-4065/ad70be","DOIUrl":"https://doi.org/10.35848/1347-4065/ad70be","url":null,"abstract":"High-purity ternary titanium–niobium nitride nanoparticles were prepared by an induction thermal plasma. Metallic Ti and Nb powders served as raw materials. Molar fractions of Nb/(Ti+Nb) were set at various levels including 0, 0.25, 0.5, 0.75, and 1. Ammonia was introduced from the bottom into the plasma equipment as a quench gas. Nanoparticles crystallized in a cubic rock salt structure in the crystallographic space group <italic toggle=\"yes\">Fm</italic>-3<italic toggle=\"yes\">m</italic>. All nanoparticles exhibited similar morphology. The average particle size across all samples is approximately 10–14 nm. Elements Ti, Nb, and N are almost uniformly distributed in the nanoparticles. Investigations into the formation mechanism were conducted by examining nucleation temperature and thermodynamic analysis. Ternary titanium–niobium nitride nanoparticles form rapidly through nucleation, condensation, and coagulation with a nitridation reaction. Induction thermal plasma proves to be a highly efficient method for synthesizing ternary titanium–niobium nitride nanoparticles.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"423 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of the piezoelectric properties of (100) BiFeO3 films on Si by all-sputtered epitaxial growth 通过全溅射外延生长增强硅基 (100) BiFeO3 薄膜的压电特性

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6d74

S. Aphayvong, K. Takaki, N. Fujimura, T. Yoshimura

引用次数: 0

Deep learning model for predicting the spatial distribution of binding energy from atomic configurations 从原子构型预测结合能空间分布的深度学习模型

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6e8e

Seiki Saito, Shingo Sato, Hiroaki Nakamura, Chako Takahashi, Keiji Sawada, Kazuo Hoshino, Masahiro Kobayashi, Masahiro Hasuo

引用次数: 0

Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing 利用高压退火对锗中离子注入 p 型和 n 型掺杂物的活化和扩散进行研究

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6ed6

Tai-Chen Kuo, Wen-Hsi Lee, Michael Ira Current

{"title":"Investigation of the activation and diffusion of ion-implanted p-type and n-type dopants in germanium using high-pressure annealing","authors":"Tai-Chen Kuo, Wen-Hsi Lee, Michael Ira Current","doi":"10.35848/1347-4065/ad6ed6","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6ed6","url":null,"abstract":"In this study, we investigate the effectiveness of high-pressure annealing (HPA) compared to microwave annealing (MWA) in activating n-type and p-type dopants in germanium. For phosphorus dopants, HPA at 500 °C significantly enhances the activation level, resulting in a reduction of sheet resistance to 120.1 ohms sq.−1 and a maximum active concentration of up to 5.76 × 1019 P cm−3. Similarly, for boron dopants, HPA at 800 °C reduces the sheet resistance to 80.6 ohms sq.−1 and achieves a maximum active concentration that maintains effective doping profiles. Transmission electron microscopy images reveal that the amorphous layers implanted with phosphorus and boron are significantly reduced, indicating that HPA is more effective in achieving solid-phase epitaxial regrowth compared to MWA. HPA demonstrates superior performance in minimizing dopant diffusion and reducing sheet resistance for both phosphorus and boron dopants, making it a preferable method for high-temperature annealing in germanium-based devices.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma sources sputtering nanoscale contaminants with low-energy ion flux on front-end mirrors in ITER optical diagnostics 等离子源在热核实验堆光学诊断前端反射镜上溅射低能量离子通量的纳米级污染物

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6e90

Andrey Ushakov, Ad Verlaan, Ulf Stephan, Olaff Steinke, Cederik Meekes, André Rijfers, Peter Giesen, Eiichi Yatsuka, Maarten de Bock, Michele Bassan, Lucas Moser, Masahito Yokoyama, Erik van Beekum, Shobhit Yadav

{"title":"Plasma sources sputtering nanoscale contaminants with low-energy ion flux on front-end mirrors in ITER optical diagnostics","authors":"Andrey Ushakov, Ad Verlaan, Ulf Stephan, Olaff Steinke, Cederik Meekes, André Rijfers, Peter Giesen, Eiichi Yatsuka, Maarten de Bock, Michele Bassan, Lucas Moser, Masahito Yokoyama, Erik van Beekum, Shobhit Yadav","doi":"10.35848/1347-4065/ad6e90","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e90","url":null,"abstract":"New plasma sources are proposed to clean optical mirrors in diagnostic instruments of the ITER experiment considering RF discharges operating at low pressures (1–10 Pa) in inert gases. There are nearly twenty optical diagnostics where the front-end optical mirrors may require plasma cleaning. The mirrors vary in size and would need up to 400 W in the discharge to form ion fluxes capable of removing Be- and W-containing contaminants to restore the optical performance with tolerable damage to the mirror. The plasma sources suggested to clean contaminants include a vacuum matching circuit placed close to the mirror and a quarter wavelength band stop notch filter when mirror water cooling is needed. Long-term operation stability and cleaning homogeneity may employ a driving frequency variation to tune the circuit and a phase shift for RF voltages to clean two mirrors simultaneously. In this paper, the plasma sources based on 40 MHz RF discharge to clean first mirrors are studied experimentally for two ITER optical instruments: the Edge Thomson Scattering and the Visible Spectroscopy Reference System. Frequency tuning and phase shifting are studied in realistic configurations prototyping diagnostic port plug geometries.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"23 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relationship between the surface free energy of underlayers and the dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl groups in tetramethylammonium hydroxide aqueous developer 部分受叔丁氧羰基保护的聚对羟基苯乙烯在四甲基氢氧化铵水溶液显影剂中的下层表面自由能与溶解动力学之间的关系

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-04 DOI: 10.35848/1347-4065/ad6f86

Jiahao Wang, Takahiro Kozawa

{"title":"Relationship between the surface free energy of underlayers and the dissolution kinetics of poly(4-hydroxystyrene) partially protected by t-butoxycarbonyl groups in tetramethylammonium hydroxide aqueous developer","authors":"Jiahao Wang, Takahiro Kozawa","doi":"10.35848/1347-4065/ad6f86","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6f86","url":null,"abstract":"In the lithography used for the high-volume production of semiconductor devices, the photoresist film becomes thin with the reduction in pattern size to prevent the pattern collapse due to the surface tension of rinsing liquids. The interfacial effect becomes strong with the reduction in photoresist film thickness. In the development process, it is of importance to clarify the relationship between the photoresist and the underlayer for fine patterning. In this study, the dissolution kinetics of poly(4-hydroxystyrene) (PHS) partially protected by <italic toggle=\"yes\">t</italic>-butoxycarbonyl (<italic toggle=\"yes\">t</italic>-Boc) groups in tetramethylammonium hydroxide (TMAH) aqueous solution was found to be related to the surface free energy of the underlayer. The attenuation rate of developer viscosity first decreased and then increased with the polar-to-dispersion component ratio. An inflection point with the lowest rate existed. The TMAH concentration affected not only the attenuation rate but also the ratio of polar to dispersion components at the minimum attenuation rate.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"303 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain sensing based on modal interference spectrum in polarization-maintaining fiber 基于偏振保持光纤模态干涉频谱的应变传感

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-03 DOI: 10.35848/1347-4065/ad6f84

Tomohiro Shiozaki, Ariasu Tamura, Yosuke Mizuno

引用次数: 0

Analysis of hot carrier instability in a floating body cell 浮体电池中热载流子不稳定性分析

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-03 DOI: 10.35848/1347-4065/ad69eb

Hiroomi Nakajima, Tomoaki Shino, Hironobu Furuhashi, Jun Nishimura, Tomoki Higashi, Katsuyuki Fujita, Kosuke Hatsuda, Ryo Fukuda, Takeshi Kajiyama

引用次数: 0

Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15 4H-SiC 和 2H-GaN 对原子序数为 12 至 15 的低速〈 0001〉沟道离子的电子阻挡力比较

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-02 DOI: 10.35848/1347-4065/ad6bda

Kazuhiro Mochizuki, Tomoaki Nishimura, Tomoyoshi Mishima

引用次数: 0

Investigation of the impact of environmental conditions on the mechanical properties of thin-film copper wafers 研究环境条件对薄膜铜晶片机械性能的影响

IF 1.5 4区物理与天体物理

Japanese Journal of Applied Physics Pub Date : 2024-09-02 DOI: 10.35848/1347-4065/ad6bd9

Quoc-Phong Pham, Le Ngoc Quynh Hoa, Muhamad Amirul Haq, Le Nam Quoc Huy

{"title":"Investigation of the impact of environmental conditions on the mechanical properties of thin-film copper wafers","authors":"Quoc-Phong Pham, Le Ngoc Quynh Hoa, Muhamad Amirul Haq, Le Nam Quoc Huy","doi":"10.35848/1347-4065/ad6bd9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6bd9","url":null,"abstract":"Thin-film copper offers excellent film texture for multilevel interconnections in integrated circuit fabrication due to its superior resistance to electromigration and high electrical conductivity. To perform a chemical mechanical planarization process during semiconductor fabrication of copper, it is necessary to have a thorough understanding of the nanomechanical properties of thin-film copper. In this study, thin-film copper and reacted passivation layers on silicon substrate wafers are investigated for their nanomechanical properties under various environmental conditions. The results of this study indicate that thin-film copper passivation layers have different properties in deionized (DI) water and polishing slurry environments compared to thin-film copper exposed to ambient air. Interestingly, variations in temperature within wet environments do not significantly affect the properties of thin-film copper wafers; but changes in properties are largely driven by chemical processes. The insights gained from this study emphasize the significance of considering both the passivation layers and wet environments in semiconductor fabrication processes, which contributes to the advancement of copper-based interconnect materials and optimization of the chemical mechanical planarization process in semiconductor manufacturing.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142218117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0