Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity 〈0001〉 channeled ions with atomic numbers of 12 to 15

Measured electronic stopping powers along the 〈0001〉 direction (S _e) of 4H-SiC and 2H-GaN for low-velocity ₁₂Mg, ₁₃Al, and ₁₅P ions were reproduced with the modified El-Hoshy−Gibbons model that reduced not only the atomic numbers of projectiles and targets but also the impact parameter for small-angle collisions (based on the Kohn−Sham radii of projectiles) in the Firsov model. Unreported S _e of 2H-GaN for low-velocity ₁₄Si ions was then predicted to be between S _e of 2H-GaN for ₁₂Mg ions and S _e of 4H-SiC for ₁₃Al ions, indicating not only Al and Mg but also Si channeling being usable for fabricating cost-effective superjunctions.