Proceedings, IEEE Tenth International Conference on Terahertz Electronics最新文献_第4页

Characteristics of large-aperture photoconductive terahertz antennas 大孔径光导太赫兹天线的特性

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037607

M. R. Stone, M. Naftaly, N. N. Zinov'ev, R. Miles

引用次数: 3

Conventional and novel approaches to RF power generation with two-terminal devices at terahertz frequencies 太赫兹频率双端射频发电的传统和新方法

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037576

H. Eisele

{"title":"Conventional and novel approaches to RF power generation with two-terminal devices at terahertz frequencies","authors":"H. Eisele","doi":"10.1109/THZ.2002.1037576","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037576","url":null,"abstract":"Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators at W-band (75-110 GHz) and D-band (110-170 GHz) frequencies. More importantly, they resulted in orders of magnitude higher radio-frequency (RF) output power levels above D-band. Examples are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3 mW at 300 GHz, and more than 1 mW at 315 GHz. The DC power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Generation of significant RF power levels from InP Gunn devices is predicted up to at least 500 GHz. A different approach to a Gunn-like device for even higher frequencies is based on a heterostructure perpendicular to a superlattice. Tunnel injection transit-time (TUNNETT) diodes are another candidate for low-noise RF sources at submillimeter-wave frequencies. Low-noise GaAs TUNNETT diodes, for example, already yielded more than 10 mW at 202 GHz, but more recent material systems such as GaN show more favorable material parameters than GaAs.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Wavelet filtered modelling applied to measurements of a waveguide's THz time domain response 小波滤波模型应用于波导太赫兹时域响应的测量

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037608

S. Hadjiloucas, R. Galvão, V. Becerra, J. Bowen, R. Martini, M. Brucherseifer, H. Pellemans, P. Bolívar, H. Kurz, J. M. Chamberlain

{"title":"Wavelet filtered modelling applied to measurements of a waveguide's THz time domain response","authors":"S. Hadjiloucas, R. Galvão, V. Becerra, J. Bowen, R. Martini, M. Brucherseifer, H. Pellemans, P. Bolívar, H. Kurz, J. M. Chamberlain","doi":"10.1109/THZ.2002.1037608","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037608","url":null,"abstract":"A quasi-optical de-embedding technique for characterizing waveguides is demonstrated using wideband time-resolved terahertz spectroscopy. A transfer function representation is adopted for the description of the signal in the input and output port of the waveguides. The time domain responses were discretised and the waveguide transfer function was obtained through a parametric approach in the z-domain after describing the system with an ARX as well as with a state space model. Prior to the identification procedure, filtering was performed in the wavelet domain to minimize signal distortion and the noise propagating in the ARX and subspace models. The model identification procedure requires isolation of the phase delay in the structure and therefore the time-domain signatures must be firstly aligned with respect to each other before they are compared. An initial estimate of the number of propagating modes was provided by comparing the measured phase delay in the structure with theoretical calculations that take into account the physical dimensions of the waveguide. Models derived from measurements of THz transients in a precision WR-8 waveguide adjustable short will be presented.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130279134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Light-induced difference Terahertz spectroscopy and its biomedical applications 光致差太赫兹光谱学及其生物医学应用

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037618

Y.C. Shen, P. Upadhya, A. Davies, E. Linfield

{"title":"Light-induced difference Terahertz spectroscopy and its biomedical applications","authors":"Y.C. Shen, P. Upadhya, A. Davies, E. Linfield","doi":"10.1109/THZ.2002.1037618","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037618","url":null,"abstract":"Laser-induced difference THz spectroscopy has been used to investigate three samples with different lifetimes. The spectroscopy system is based on a 10 nJ titanium sapphire laser with a pulse duration of 12 fs and a centre wavelength of 790 nm. For semi-insulting (SI) GaAs and high-resistivity (HR) silicon samples, absorption in the THz range is mainly a result of mobile electrons. A lifetime of about 50 ps has been determined for the SI-GaAs sample, whereas the lifetime of the HR-Si samples was found to be much larger than the time interval between two successive laser pulses (12 ns). As a result, the differential THz signal is about twenty times larger than that for SI-GaAs. We also observed that the THz pulse arrives at the detector 100 fs earlier when it transmitted through an optically excited HR-Si wafer. For copper pathancyonine (CuPc) pellet samples, the excited state remains for at least 1 ms. The absorption peak at 1.08 THz changes significantly under 790 nm laser excitation, suggesting that we have observed the first evidence of light-induced vibrational mode changes, in the THz range.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design considerations for on-chip THz analysis of biomolecules 芯片上太赫兹分析生物分子的设计考虑

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037594

T. Baras, T. Kleine-Ostmann, M. Koch

引用次数: 3

Terahertz generation in negative-effective-mass diodes 负有效质量二极管中的太赫兹产生

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037612

J. Cao, H. Liu, S. Feng

引用次数: 0

Self-consistent rate equation modelling of a Terahertz GaAs/AlGaAs quantum-cascade laser 太赫兹GaAs/AlGaAs量子级联激光器的自洽速率方程建模

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037600

D. Indjin, P. Harrison, R. Kelsall, Z. Ikonić

{"title":"Self-consistent rate equation modelling of a Terahertz GaAs/AlGaAs quantum-cascade laser","authors":"D. Indjin, P. Harrison, R. Kelsall, Z. Ikonić","doi":"10.1109/THZ.2002.1037600","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037600","url":null,"abstract":"In this work, electron transport in GaAs/AlGaAs quantum cascade lasers operating at far-infrared wavelengths is calculated self-consistently using an intersubband scattering model. Subband populations and carrier transition rates are calculated and all relevant electron-electron and electron-LO phonon scatterings between the injector/collector and active region levels (13-levels in total) are included. Employing an energy balance equation which includes the influence of both electron-LO phonon and electron-electron scattering, the method also includes the evaluation of the electron temperature of the non-equilibrium carrier distributions in the device. The calculated threshold currents (J/sub th/ = 250-300 kA/cm/sup 2/) and electric field-current density characteristics (current saturation is predicted at /spl sim/680 A/cm/sup 2/), are in good qualitative and quantitative agreement with measurements in a recent experimental realization (Kohler et al, Nature, vol. 417, pp. 156-159, 2002). Due to the increased influence on electron-electron scatterings, the electron temperature is found to be more sensitive to the current density than in mid-infrared devices. The technique promises to be a powerful tool for the optimization of new, improved Terahertz quantum cascade lasers.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121505968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient THz-emitters for low-temperature-grown GaAs photomixers 用于低温生长的砷化镓光电混合器的高效太赫兹发射器

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037589

C. Sydlo, J. Sigmund, H. Hartnagel, G. Loata, K. Siebert, H. Roskos

引用次数: 3

Design and performance of a novel vacuum-capable terahertz time-domain spectrometer 一种新型真空太赫兹时域光谱仪的设计与性能

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037619

Yaochun Shen, P. Upadhya, E. Linfield, A. Davies

引用次数: 1

Numerical image enhancement for THz time-domain spectroscopy 太赫兹时域光谱的数值图像增强

Proceedings, IEEE Tenth International Conference on Terahertz Electronics Pub Date : 2002-11-07 DOI: 10.1109/THZ.2002.1037617

C. Schildknecht, T. Kleine-Ostmann, P. Knobloch, E. Rehberg, M. Koch

引用次数: 11