{"title":"负有效质量二极管中的太赫兹产生","authors":"J. Cao, H. Liu, S. Feng","doi":"10.1109/THZ.2002.1037612","DOIUrl":null,"url":null,"abstract":"Theoretically studied current self-oscillations and spatiotemporal current patterns in quantum-well (QW) negative-effective-mass (NEM) p/sup +/pp/sup +/ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the well. In the calculations we have accurately considered scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It is indicated that, both the applied bias and the doping concentration in the well largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p/sup +/pp/sup +/ diode having a submicrometer p-base. The NEM p/sup +/pp/sup +/ diode presented here may therefore be used as an electrically tunable THz source.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Terahertz generation in negative-effective-mass diodes\",\"authors\":\"J. Cao, H. Liu, S. Feng\",\"doi\":\"10.1109/THZ.2002.1037612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Theoretically studied current self-oscillations and spatiotemporal current patterns in quantum-well (QW) negative-effective-mass (NEM) p/sup +/pp/sup +/ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the well. In the calculations we have accurately considered scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It is indicated that, both the applied bias and the doping concentration in the well largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p/sup +/pp/sup +/ diode having a submicrometer p-base. The NEM p/sup +/pp/sup +/ diode presented here may therefore be used as an electrically tunable THz source.\",\"PeriodicalId\":143116,\"journal\":{\"name\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"volume\":\"198 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THZ.2002.1037612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THZ.2002.1037612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Terahertz generation in negative-effective-mass diodes
Theoretically studied current self-oscillations and spatiotemporal current patterns in quantum-well (QW) negative-effective-mass (NEM) p/sup +/pp/sup +/ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the well. In the calculations we have accurately considered scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It is indicated that, both the applied bias and the doping concentration in the well largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p/sup +/pp/sup +/ diode having a submicrometer p-base. The NEM p/sup +/pp/sup +/ diode presented here may therefore be used as an electrically tunable THz source.