IEEE Transactions on Terahertz Science and Technology最新文献

{"title":"A Multiband Terahertz Detector in 65-nm CMOS for Spectroscopic Imaging","authors":"Zhao-Yang Liu;Feng Qi;Ye-Long Wang;Peng-Xiang Liu;Wei-Fan Li","doi":"10.1109/TTHZ.2024.3442438","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3442438","url":null,"abstract":"This article proposes a low-area multiband terahertz (THz) detector structure for spectroscopic imaging, which consists of several narrow-band THz detectors with different detection frequencies. By combining the output of the narrow-band detectors, broadband detection is realized. The detection frequency can be expanded by adding more narrow-band detectors with different detection bands. To reduce the whole area of the detector, a loop antenna is used in each narrow-band detector to realize a nestable architecture, where the high-frequency antennas are successively placed in the low-frequency antennas with the same center position. The area is determined only by the narrow-band detector with the lowest detection frequency. Each of the narrow-band detectors adopts a conventional self-mixing detection structure, including an FET-based power detection circuit, an on-chip loop antenna, and a matching network. Two spiral structures are proposed as the matching network to improve the performance of each narrow-band detector. Using the multiband detector structure, a detector with eight frequency bands has been implemented in the 65-nm CMOS process, which achieves effective detection in the 75–1100 GHz range with an area of only 244 × 244 \u0000<italic>μ</i>\u0000m\u0000²\u0000. A peak voltage responsivity (\u0000<italic>R_v</i>\u0000) of 1.4 kV/W and a minimum noise equivalent power of 17 pW/Hz\u0000^1/2\u0000 are achieved. A set of spectrum analysis experiments and imaging experiments verify the practicability of the multiband detector structure.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"781-790"},"PeriodicalIF":3.9,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"8×8 Patch-Antenna-Coupled TeraFET Detector Array for Terahertz Quantum-Cascade-Laser Applications","authors":"Jakob Holstein;Nicholas K. North;Michael D. Horbury;Sanchit Kondawar;Imon Kundu;Mohammed Salih;Anastasiya Krysl;Lianhe Li;Edmund H. Linfield;Joshua R. Freeman;Alexander Valavanis;Alvydas Lisauskas;Hartmut G. Roskos","doi":"10.1109/TTHZ.2024.3438429","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3438429","url":null,"abstract":"Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3–10 THz) that can operate at room temperature. We conducted experimental characterizations of a singlepatch-antenna-coupled TeraFET optimized for 3.4 THz operation and its integration into an 8×8 multielement detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode quantum-cascade lasers (QCLs) emitting at 2.85 and 3.4 THz. The 8×8 multielement detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a -3 dB modulation bandwidth up to 21 MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high-resolution gas spectroscopy data for methanol vapor around 3.4 THz, where a detection limit of \u0000<inline-formula><tex-math>$1.6 times 10^{-5}$</tex-math></inline-formula>\u0000 absorbance or \u0000<inline-formula><tex-math>$2.6times 10^{11} text{molecules}/text{cm}^{3}$</tex-math></inline-formula>\u0000 was estimated.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"799-807"},"PeriodicalIF":3.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of 0.6-THz Continuous-Wave Irradiation on Pathologically Relevant Protein Aggregates","authors":"Antonia Intze;Maria Eleonora Temperini;Giorgio Gregori;Federica Verde;Michele Ortolani;Valeria Giliberti","doi":"10.1109/TTHZ.2024.3435397","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3435397","url":null,"abstract":"In this article, we investigated the effect of continuous-wave (CW) radiation at 0.6 THz on pathological protein aggregates in the form of amyloid fibrils, i.e., ordered protein complexes linked to neurodegenerative diseases such as Parkinson's and Frontotemporal Dementia. To monitor the effect of terahertz (THz) irradiation, we exploited mid-infrared (mid-IR) vibrational spectroscopy in the amide-I band range, whose lineshape is known to depend on the protein conformation and on how proteins arrange into ordered supramolecular complexes such as fibrils. We coupled the focused THz beam to two different IR-based spectrometers: a conventional Fourier-transform IR (FTIR) Michelson interferometer where the estimated THz electric field is of the order of \u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u00001 \u0000<inline-formula><tex-math>$frac{text{V}}{{{text {cm}}}}$</tex-math></inline-formula>\u0000; and an atomic force microscopy-assisted (AFM-IR) near-field spectrometer based on a tunable mid-IR quantum cascade laser, where a much higher electric field (\u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u00000.1 \u0000<inline-formula><tex-math>$frac{{{text {kV}}}}{text{cm}}$</tex-math></inline-formula>\u0000) is mainly achieved thanks to the field enhancement provided by the use of a metallic AFM tip and sample support. In the first case, we interpreted the modification of the amide-I band upon THz irradiation in terms of an increase of the intermolecular forces within fibrils in response to environmental changes induced by THz irradiation (change of hydration). On the other hand, nonthermal effects are observed in the high-THz-field experiments performed on isolated fibril agglomerates in dry condition with the AFM-assisted spectrometer. The IR spectral response upon prolonged THz irradiation contains only the protein contribution and we obtain a different trend compared to the FTIR experiments, i.e., a weakening of the intermolecular forces, here directly induced by THz absorption and not mediated by changes of the environmental conditions. One can envision that further increase of the THz field value, such as with pulsed laser, can lead to the disassembly of protein fibrils.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"652-660"},"PeriodicalIF":3.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fully Electrically Driven Liquid Crystal Reconfigurable Intelligent Surface for Terahertz Beam Steering","authors":"Lu Xu;Kaiwen Li;Guozhen Zhang;Jun Yang;Zhiping Yin;Mincheng Zhong;Hongbo Lu;Guangsheng Deng;Ying Li","doi":"10.1109/TTHZ.2024.3435506","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3435506","url":null,"abstract":"A rapid response reconfigurable intelligent surface (RIS) based on liquid crystals (LCs) is demonstrated for terahertz beam steering. A wire-controlled metasurface array is achieved by substituting the metal backplane of conventional reconfigurable metasurfaces with pixelated grating electrodes. Notably, the RIS employs bias voltage control across its full states, facilitating accelerated transitions between them. It significantly enhances the response speed of the proposed LC device. Simulation and test results consistently indicate that the RIS exhibits outstanding beam steering capability at the optimal operating frequency of 415 GHz. Specifically, the proposed RIS realizes wide-angle beam scanning from 20° to 60°. Our work is expected to have potential applications in 6G communications, vortex beam generation, and imaging.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"708-717"},"PeriodicalIF":3.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First Demonstration of an All-Solid-State Room Temperature 2-THz Front End Viable for Space Applications","authors":"Jose V. Siles;Alain Eric Maestrini;Choonsup Lee;Robert Lin;Imran Mehdi","doi":"10.1109/TTHZ.2024.3430013","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3430013","url":null,"abstract":"In this article, we introduce a groundbreaking 2-THz front end suitable for space use, operating at room temperature. Our objective is to measure high-altitude 3-D winds for precise Sun–earth energy coupling analysis. Employing Schottky-diode-based mixers and multipliers, we have developed a solid-state receiver with double-sideband sensitivity below 8000 K. This sensitivity enables the measurement of atomic oxygen in the approximate 100–200-km altitude range. Our approach encompasses design, fabrication, and sensitivity assessment of the receiver front end.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"607-612"},"PeriodicalIF":3.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Generalized Analysis of Output-Power Limitations of Resonant-Tunnelling-Diode Oscillators With Symmetrical Slot Antennas","authors":"Gabriele Picco;Petr Ourednik;Dinh Tuan Nguyen;Michael Feiginov","doi":"10.1109/TTHZ.2024.3435464","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3435464","url":null,"abstract":"In this article, we present optimization results for the symmetrical-slot-antenna resonant-tunnelling-diode (RTD) oscillators with account of relevant antenna losses and RTD parasitics. The results are in good agreement with available experimental data. The frequency roll-off of the output power has a complicated dependence on the oscillator parameters and does not exhibit a distinct dominant mechanism responsible for it. However, the roll-off is much steeper for lower-current-density RTDs, with much better performance of high-current-density RTDs not only at terahertz (THz) but also at sub-THz frequencies. The required minimum RTD-mesa area for optimized oscillators remains in an acceptable range for common fabrication technology: \u0000<inline-formula><tex-math>$approx 0.1text{--}0.2,mutext {m}^{2}$</tex-math></inline-formula>\u0000.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"621-631"},"PeriodicalIF":3.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10614880","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 170-GHz Cascode Frequency Doubler With 15.6-dBm POUT in 130-nm SiGe BiCMOS","authors":"Zhen Yang;Fanyi Meng;Bing Liu;Kaixue Ma","doi":"10.1109/TTHZ.2024.3435461","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3435461","url":null,"abstract":"In this letter, a two-way 170-GHz cascode frequency doubler with a delayed odd-harmonic cancellation line (DOHCL) for second-harmonic power and efficiency boosting fabricated in 130-nm SiGe BiCMOS technology is presented. The harmonic load pull is adopted to optimize the fundamental and second-harmonic impedances of the doubler core. The DOHCL converts the fundamental impedance from zero to optimum and temporarily holds the voltage swing at the load side at the cascode cores. Finally, the frequency doubler achieves a 3-dB bandwidth from 156 to 178 GHz and a bandwidth from 140 to 188 GHz for output power (\u0000<italic>P</i>\u0000_OUT\u0000) ≥ 11 dBm. The maximum \u0000<italic>P</i>\u0000_OUT\u0000 and efficiency are 15.6 dBm and 12.1%, respectively, at 164 GHz. The chip area is 0.37 mm\u0000²\u0000 including pads. To the best of our knowledge, the proposed cascode frequency doubler achieves the highest \u0000<italic>P</i>\u0000_OUT\u0000 and power density in \u0000<italic>G</i>\u0000-band Si-based frequency doublers.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"774-778"},"PeriodicalIF":3.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors","authors":"Marcel Andree;Janusz Grzyb;Holger Rücker;Ullrich R. Pfeiffer","doi":"10.1109/TTHZ.2024.3432619","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3432619","url":null,"abstract":"This work focuses on a systematic analysis of the potential and limitations of modern SiGe HBT devices for broadband passive room-temperature detection in the lower THz range. Multiple necessary conditions need to be fulfilled to facilitate broadband passive imaging with a sufficiently low in-band NEP, which refer to various technology-driven device operation aspects, including the THz rectification process and low-frequency analysis. To properly understand and model the devices' internal parasitics in combination with antenna-detector co-design aspects, a simplified nonlinear high-frequency detector model was applied for the devices operating in the forward-active and saturation region (cold operation). The complete detector was implemented in a modern high-speed 130 nm SiGe HBT technology with \u0000<inline-formula><tex-math>$f_{t}/f_{text{max}}$</tex-math></inline-formula>\u0000 of 470/650 GHz. It comprises two orthogonal polarization paths within a single dual-polarization lens-coupled on-chip antenna to operate with unpolarized passive illumination. Due to an efficient antenna-circuit co-design, a close-to-optimum detector performance in a near-THz fractional bandwidth was achieved, as experimentally verified in free-space measurements with frequency-tunable coherent CW sources. The detector optical NEP for each polarization path was measured across 200–1000 GHz reporting state-of-the-art values of 2.3–23 pW/\u0000<inline-formula><tex-math>$mathrm{sqrt{Hz}}$</tex-math></inline-formula>\u0000 (forward-active) and 4.3–45 pW/\u0000<inline-formula><tex-math>$mathrm{sqrt{Hz}}$</tex-math></inline-formula>\u0000 (saturation). This, combined with the de-embedded equivalent noise bandwidth of 512 GHz around 430 GHz, allowed to demonstrate a 1-Hz defined NETD of 0.86 K and 2 K with a focussed cavity black-body standard chopped mechanically at 1.5 kHz. By dual-channel operation, the NETD scaled down to 0.64 K, indicating near-zero noise correlation between both polarization paths.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"632-651"},"PeriodicalIF":3.9,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10607950","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-Wafer Capacitor Characterization Including Uncertainty Estimates Up to 1.0 THz","authors":"Rob D. Jones;Jerome Cheron;Benjamin F. Jamroz;William R. Deal;Miguel Urteaga;Dylan F. Williams;Ari D. Feldman;Peter H. Aaen;Christian J. Long;Nathan D. Orloff","doi":"10.1109/TTHZ.2024.3431190","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3431190","url":null,"abstract":"In this article, we extract the capacitance of shunt and series metal-insulator-metal capacitors from on-wafer S-parameter measurements in the WR1.0 (0.75–1.1 THz) waveguide band. These capacitors were fabricated in two different state-of-the-art terahertz semiconductor processes and measured with two different designs of via-stitched grounded coplanar waveguide calibration kits. We investigate the measurement uncertainty of extracting a shunt capacitance in the presence of probe positioning uncertainty, calibration kit process variation, and vector network analyzer electrical repeatability. We find that these uncertainty sources result in a large prediction interval that is 30.2% of the capacitor's value (14.9 ± 4.5 fF) at 900 GHz with the uncertainty from probe positioning as the largest contributor. This is the first time that an extensive uncertainty analysis has been performed on characterizing on-wafer devices at 1 THz. We quantify the precision of current calibration techniques and measurement equipment.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"734-744"},"PeriodicalIF":3.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Metric for the Comparison of Permittivity Models in Terahertz Time-Domain Spectroscopy","authors":"Melanie Lavancier;Nabil Vindas-Yassine;Juliette Vlieghe;Theo Hannotte;Jean-François Lampin;François Orieux;Romain Peretti","doi":"10.1109/TTHZ.2024.3431202","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3431202","url":null,"abstract":"Wepresent a robust method, as well as a new metric, for the comparison of permittivity models in terahertz time-domain spectroscopy (THz-TDS). In this article, we show that the signal is perturbed by a deterministic part that has to be either modeled or removed. Therefore, we perform an extensive perturbation/noise analysis of a THz-TDS system, remove and model the unwanted deterministic perturbation/noises and implement them into our fitting process. This new method has now been implemented in our open-source software, Fit@TDS. This article is the first step toward the derivation of uncertainties, and therefore the use of error bars. We hope that this will lead to performing analytical analysis with THz-TDS, as results obtained from different setups will be comparable. Finally, we apply this protocol to the study of a \u0000<inline-formula><tex-math>$alpha$</tex-math></inline-formula>\u0000-lactose monohydrate pellet in order to give more insight on the molecular dynamics behind the absorption peaks. The comparison with simulation results is made easier thanks to the probabilities derived from the metric.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"725-733"},"PeriodicalIF":3.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}