Laurens F. E. Beijnen;Martijn D. Huiskes;Andrea Neto;Paolo Maria Sberna
{"title":"Drude’s Parameters of Heated Crystalline Silicon From Reflection THz-TDS Measurements","authors":"Laurens F. E. Beijnen;Martijn D. Huiskes;Andrea Neto;Paolo Maria Sberna","doi":"10.1109/TTHZ.2026.3670501","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3670501","url":null,"abstract":"The spectroscopic properties of crystalline silicon wafers are investigated experimentally as a function of the temperature. To this goal, samples of phosphorus-doped silicon are characterized using terahertz time-domain spectroscopy (THz-TDS) in reflection. Four different samples span resistivities from <inline-formula><tex-math>$sim 0.04 - 50, {rm{Omega cm}}$</tex-math></inline-formula>, for temperatures ranging from room temperature to <inline-formula><tex-math>${{200}^{mathrm{o}}}{rm{ C}}$</tex-math></inline-formula>. The measurements confirm that the widely used Drude’s theory is adequate also to model the dispersion of silicon at higher temperatures. When comparing the corresponding scattering times obtained here using THz TDS pulses with the scattering time derived from the well accepted DC based empirical model of the mobility, differences emerge depending on the doping level. The scattering times predicted and measured are on the same order of magnitude and the anticipated reduction of the scattering time with increasing temperature has also been confirmed by the high frequency measurements. The absorptivity of the samples is also estimated accurately as a function of the frequency up to 1 THz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 5","pages":"502-514"},"PeriodicalIF":3.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147734708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Graphene-Integrated Metasurface Terahertz Sensor Based on Toroidal Dipole Resonance for Ultrasensitive Pesticide Detection","authors":"Wenjing Zheng;Xiangyuan Meng;Qiyu Ying;Yilong Xin;Ziqi Li;Mingyao Wang;Changshun Wu;Li Wang;Tongling Wang;Maosheng Yang;Xiuwei Yang;Jianquan Yao","doi":"10.1109/TTHZ.2025.3641786","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3641786","url":null,"abstract":"Terahertz (THz) technology provides a label-free and nondestructive approach, making it particularly suitable for pesticide residue detection. In this article, we integrate chemical vapor deposition (CVD) graphene with a four-gap square ring metasurface to design an ultrasensitive THz sensor, where the specific current loop distribution and magnetic field confinement induce toroidal dipole resonance, resulting in a resonance peak in the transmission spectrum. By taking advantage of the ability of CVD graphene to shift its Fermi level toward the Dirac point under slight external stimulation, the proposed graphene-integrated toroidal dipole metasurface sensor achieves a detection limit of 126 pg/mL for prochloraz. Moreover, we employ a continuous wavelet transform to convert time-domain signals into 2-D wavelet coefficient intensity maps, enabling a more intuitive comparison of sensing performance with that of traditional 1-D methods. Meanwhile, we extract the maximum wavelet coefficient from the intensity maps and combine it with two 1-D parameters to construct a triangular-pyramid chart (TP-chart) for multidimensional analysis of sensing performance. This work provides an effective approach for trace-level detection, facilitating the application of terahertz technology in pesticide residue analysis.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 5","pages":"538-546"},"PeriodicalIF":3.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147734722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 6 × 6 Stitched Array of 320 GHz CMOS Active Pixel Detectors","authors":"Edoh Shaulov;Eran Socher","doi":"10.1109/TTHZ.2026.3664225","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3664225","url":null,"abstract":"This article details the design and characterization of a 6x6 detector array fabricated with 65 nm complementary metal-oxide-semiconductor (CMOS), where the pixels in the array are stitched together with wirebonds as opposed to monolithic integration. Each pixel contains an on-chip loop antenna and baseband chopper amplifier with 32 dB gain. The design focuses on maintaining detector performance under array scaling and baseband integration. Measurement results of the chopper breakout, standalone pixel, and array are presented, where the standalone pixel achieves an <italic>R<sub>V</sub></i> (voltage responsivity) of 120 kV/W and record noise-equivalent power of 6 pW/√Hz with the baseband amplifier; and the mean array <italic>R<sub>V</sub></i> is 80 kV/W. The chip pixel area is 950 <italic>μ</i>m × 600 <italic>μ</i>m.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 5","pages":"583-596"},"PeriodicalIF":3.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147734737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"3D-Printed Subterahertz High-Scanning-Rate Leaky-Wave Antenna Based on Metallic Spoof Surface Plasmon Polaritons","authors":"Zheliang Liu;Yilin Gao;Hongda Lu;Lu Qian;Yong Liu;Steven Gao","doi":"10.1109/TTHZ.2026.3668344","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3668344","url":null,"abstract":"This letter proposes a 3D-printed subterahertz fully metallic frequency-scanning (FS) periodic leaky-wave antenna (LWA) based on a spoof surface plasmon polariton (SSPP) transmission line. Glide symmetry is introduced into the conventional domino-type SSPP transmission line to increase dispersion, thereby enabling a higher scanning rate. An asymmetric periodic modulation structure is designed to excite leaky-wave radiation while suppressing the open stopband effect without extra elements. A gap waveguide (GWG) is utilized as the feeding structure, which mitigates energy leakage from potential assembly gaps and significantly reduces fabrication difficulty and assembly complexity. The SSPPs and GWG structures are monolithically fabricated using high-precision 3-D printing and surface-metallized via magnetron sputtering of gold. Experimental measurements of a prototype demonstrate continuous beam scanning from -29<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula> to +49<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula> within the frequency range from 180 to 220 GHz, achieving a scanning rate of 3.9<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>/%BW. The peak gain varies between 11.13 and 16.53 dBi. This work provides a cost-effective, high-performance, and feasible solution for metallic FS LWAs, with promising applications in terahertz imaging and radar systems.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 5","pages":"601-606"},"PeriodicalIF":3.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147734747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Microwave Theory and Techniques Society Information","authors":"","doi":"10.1109/TTHZ.2026.3662942","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3662942","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 3","pages":"C2-C2"},"PeriodicalIF":3.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11400616","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146216608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Expand Your Network","authors":"","doi":"10.1109/TTHZ.2026.3663186","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3663186","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 3","pages":"356-356"},"PeriodicalIF":3.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11400614","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146216633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2026.3662944","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3662944","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 3","pages":"352-353"},"PeriodicalIF":3.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11400618","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146216642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Terahertz Science and Technology Publication Information","authors":"","doi":"10.1109/TTHZ.2026.3662946","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3662946","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 3","pages":"C3-C3"},"PeriodicalIF":3.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11400615","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146216639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Women in Engineering","authors":"","doi":"10.1109/TTHZ.2026.3663184","DOIUrl":"https://doi.org/10.1109/TTHZ.2026.3663184","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 3","pages":"354-354"},"PeriodicalIF":3.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11400613","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146216647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}