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IEEE Transactions on Terahertz Science and Technology最新文献

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Editorial Special Issue on Selected Emerging Trends in Terahertz Science and Technology 太赫兹科学与技术的若干新趋势》编辑特刊
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-09-09 DOI: 10.1109/TTHZ.2024.3442446
Taylor Zachary;Frank Hegmann
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引用次数: 0
IEEE Transactions on Terahertz Science and Technology Information for Authors 太赫兹科学与技术》（IEEE Transactions on Terahertz Science and Technology）作者须知
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-09-09 DOI: 10.1109/TTHZ.2024.3450173
{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2024.3450173","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3450173","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"661-662"},"PeriodicalIF":3.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669853","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Women in Engineering 电气和电子工程师学会工程界妇女
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-09-09 DOI: 10.1109/TTHZ.2024.3450769
{"title":"IEEE Women in Engineering","authors":"","doi":"10.1109/TTHZ.2024.3450769","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3450769","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"664-664"},"PeriodicalIF":3.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669944","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Terahertz Science and Technology Information for Authors 太赫兹科学与技术》（IEEE Transactions on Terahertz Science and Technology）作者须知
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-09-09 DOI: 10.1109/TTHZ.2024.3450149
{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2024.3450149","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3450149","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 5","pages":"779-780"},"PeriodicalIF":3.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669951","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Tricoupled Resonant-Based Terahertz Switch Utilizing Tail-Transmission-Line with Ultra-Low Insertion Loss and Intrinsic ESD-Protection 一种基于三耦合谐振的太赫兹开关，利用具有超低插入损耗和固有 ESD 保护功能的尾部传输线
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-29 DOI: 10.1109/TTHZ.2024.3451625
Nengxu Zhu;Yiting Zhang;Fanyi Meng
{"title":"A Tricoupled Resonant-Based Terahertz Switch Utilizing Tail-Transmission-Line with Ultra-Low Insertion Loss and Intrinsic ESD-Protection","authors":"Nengxu Zhu;Yiting Zhang;Fanyi Meng","doi":"10.1109/TTHZ.2024.3451625","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3451625","url":null,"abstract":"This letter presents a cell-based single-pole single-throw (SPST) switch adopting tricoupled resonant topology. Due to the inherent characteristics of the physically isolated structure and the introduction of isolation-enhanced tail-transmission-lines, the switch features low insertion loss (IL), high linearity, and electrostatic discharge (ESD) self-protection. Implemented in 0.13-\u0000<italic>μ</i>\u0000m SiGe BiCMOS process, the switch achieves a minimum IL of 1.35 dB @ 228 GHz, 17–23 dB isolation from 200 to 250 GHz, and >8 kV HBM ESD pulse, which is suitable for millimeter-wave and terahertz wireless communication and imaging systems. The chip occupies a core area of 0.0078 mm\u0000<sup>2</sup>\u0000 and exhibits the highest figure of merit among similar SPST switches.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"884-887"},"PeriodicalIF":3.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Polarization Effect on Terahertz-Enhanced Air Plasma Acoustic Emission 太赫兹增强空气等离子体声发射的极化效应研究
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-26 DOI: 10.1109/TTHZ.2024.3450196
Guoyang Wang;Bodong Yang;Rui Zhang;Minghao Zhang;Wen Xiao;Weihao Zhang;Haixu Zhao;Cunlin Zhang;Liangliang Zhang
{"title":"Investigation of Polarization Effect on Terahertz-Enhanced Air Plasma Acoustic Emission","authors":"Guoyang Wang;Bodong Yang;Rui Zhang;Minghao Zhang;Wen Xiao;Weihao Zhang;Haixu Zhao;Cunlin Zhang;Liangliang Zhang","doi":"10.1109/TTHZ.2024.3450196","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3450196","url":null,"abstract":"Terahertz (THz)-enhanced air plasma acoustic emission has been used to investigate plasma dynamics and detect THz pulses. Here, we report the laser polarization dependence of air plasma acoustic wave under THz field illumination. The angular distribution of plasma acoustic emission is systematically characterized. The THz-enhanced acoustic efficiency for laser pulse with circular polarization is obviously higher than that with linear polarization, although the acoustic pressure induced by circularly polarized laser pulse is smaller. We attribute this effect to THz-driven electron acceleration and subsequent electron–molecule collision, while the electron densities and THz wave absorptions in plasma are significantly distinct for different laser polarizations due to multiphoton ionization in air. Our findings provide useful information for THz–plasma interaction and hold potential to further strengthen the THz detection capability through “listening” to the plasma.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"851-856"},"PeriodicalIF":3.9,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of E-Plane Misalignment on THz Diagonal Horn Antennas
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-26 DOI: 10.1109/TTHZ.2024.3449792
Divya Jayasankar;Andre Koj;Jeffrey Hesler;Jan Stake
{"title":"Impact of E-Plane Misalignment on THz Diagonal Horn Antennas","authors":"Divya Jayasankar;Andre Koj;Jeffrey Hesler;Jan Stake","doi":"10.1109/TTHZ.2024.3449792","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3449792","url":null,"abstract":"A key challenge in developing terahertz front-ends is achieving high coupling efficiency between the waveguide feed horn and the optical beam. In this article, we have quantified the alignment requirements for the widely used E-plane split diagonal horn antenna through theoretical analysis, electromagnetic simulation, and experimental validation within the 325–500 GHz frequency range. The results from our analytical models, simulations, and measurements are consistent and shows good agreement. They reveal that even minor geometric asymmetries can cause significant increases in fractional power radiated to the cross-polar component due to amplitude and phase imbalances in the TE<inline-formula><tex-math>$_{10}$</tex-math></inline-formula> and TE<inline-formula><tex-math>$_{01}$</tex-math></inline-formula> modes. Furthermore, a misalignment of approximately 8% of the wavelength was observed to result in a 3-dB degradation in the optical coupling to a Gaussian beam in middle of the waveguide band. These findings highlight the critical importance of precise alignment and feed horn machining for the successful implementation of terahertz front-end systems.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 2","pages":"143-150"},"PeriodicalIF":3.9,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143553160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Frequency Response in Coherent Photoconductive Pulsed Sources Using Leaky Wave Connected Arrays 利用漏波连接阵列增强相干光电导脉冲源的频率响应
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-23 DOI: 10.1109/TTHZ.2024.3449123
Martijn D. Huiskes;Juan Bueno;Huasheng Zhang;Paolo Maria Sberna;Nuria Llombart;Andrea Neto
{"title":"Enhanced Frequency Response in Coherent Photoconductive Pulsed Sources Using Leaky Wave Connected Arrays","authors":"Martijn D. Huiskes;Juan Bueno;Huasheng Zhang;Paolo Maria Sberna;Nuria Llombart;Andrea Neto","doi":"10.1109/TTHZ.2024.3449123","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3449123","url":null,"abstract":"Current time-domain systems based on photoconductive antennas relate their performance to the amount of THz power that they can generate as well as to their dynamic range. Although these are important parameters to characterize such systems, the quality of the beam patterns generated by them, and their spectral response are usually not taken into consideration during the design. This results in high dispersion or low radiation efficiency due to the poor coupling between the transmitter and receiver PCAs over the large bandwidth at which they operate. Photoconductive connected array (PCCA) sources have previously shown to enable THz radiation with mW power level and clean beam patterns. In this article, we present the design, fabrication, and characterization of a novel PCCA design, where a leaky wave cavity is added to the structure to further increase the bandwidth of operation. The performance of the leaky enhanced design is improved with respect to the previous design.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"843-850"},"PeriodicalIF":3.9,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigating Performance Enhancement of CMOS Terahertz Detectors With Different Topological Structures at 2.58 THz 研究具有不同拓扑结构的 CMOS 太赫兹探测器在 2.58 太赫兹频率下的性能提升情况
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-21 DOI: 10.1109/TTHZ.2024.3447154
Xin Zhang;Haipeng Fu;Kaixue Ma;Ningning Yan;Yaxuan Liu;Jiancheng Huang
{"title":"Investigating Performance Enhancement of CMOS Terahertz Detectors With Different Topological Structures at 2.58 THz","authors":"Xin Zhang;Haipeng Fu;Kaixue Ma;Ningning Yan;Yaxuan Liu;Jiancheng Huang","doi":"10.1109/TTHZ.2024.3447154","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3447154","url":null,"abstract":"In this study, we designed a terahertz (THz) detector chip based on field-effect transistors utilizing a standard 55-nm complementary metal–oxide–semiconductor process. The chip includes eight different detector structures to explore the impact of various factors on detector performance. Each detector, characterized by its unique structural design, exhibited varying levels of parasitic capacitance, port impedance matching, and asymmetry, all impacting the detector's responsivity (\u0000<italic>R<sub>v</sub></i>\u0000). Building on the previous nonquasi-static model, this research introduced a comprehensive THz detector model by incorporating plasma wave detection theory, antenna impedance, parasitic effects of the detector, port impedance, and load effects. We also derived the mathematical expression for \u0000<italic>R<sub>v</sub></i>\u0000 in the nonresonant mode. The multiple different structures detectors integrated with antenna-on-chip achieved the maximum \u0000<italic>R<sub>v</sub></i>\u0000 of 437.6V/W and the minimum noise-equivalent power (NEP) of 119 pW/Hz\u0000<sup>1/2</sup>\u0000 at 2.58 THz. We then conducted scanning imaging on a paper envelope containing a screw. The appearance of the screw and the details of creases at various thicknesses on the envelope were clearly visible. Analysis indicated that the detector's \u0000<italic>R<sub>v</sub></i>\u0000 and NEP are closely linked to several factors, including the match between the antenna and the detector, the parasitic capacitance at the THz wave coupling site, the maximization of THz wave energy coupled to the detector, the appropriate size of the detector, and the asymmetry between the source and drain.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"808-822"},"PeriodicalIF":3.9,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linearity of Fast and Highly Sensitive LiTaO$_{3}$ Pyroelectric Detectors in the Terahertz Range 太赫兹范围内快速、高灵敏度 LiTaO$_{3}$ 热释电探测器的线性度
IF 3.9 2区 工程技术
IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-19 DOI: 10.1109/TTHZ.2024.3445603
Ashutosh Sharma;Vineet Gupta;Joon-Gon Son;Abhishek Gupta;János Bohus;József A. Fülöp;Thomas Gebert
{"title":"Linearity of Fast and Highly Sensitive LiTaO$_{3}$ Pyroelectric Detectors in the Terahertz Range","authors":"Ashutosh Sharma;Vineet Gupta;Joon-Gon Son;Abhishek Gupta;János Bohus;József A. Fülöp;Thomas Gebert","doi":"10.1109/TTHZ.2024.3445603","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3445603","url":null,"abstract":"In response to single-cycle THz pulses, we measured the linearity parameter of lithium tantalate pyroelectric detectors, over nearly three orders of magnitude in pulse energy, up to 2 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000J. The response was linear up to 1 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000J pulse energy and 25 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000J/cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000 energy flux, and sublinear at higher irradiations. This finding shows the importance of characterizing the detector response linearity for accurate THz metrology. The detectors had high sensitivity in single-pulse detection mode up to 10 kHz repetition rate.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 6","pages":"823-829"},"PeriodicalIF":3.9,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638827","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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