- 179 dBc/Hz FoM的65nm CMOS 225 ghz耦合谐振子

IF 3.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yue Liang;Jing Feng;Qin Chen;Xu Wu;Xiangning Fan;Lianming Li
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引用次数: 0

摘要

这封信介绍了一个225 ghz耦合二次谐波振荡器。单端振荡器核心采用带相位因子的分段线性模型来分析大信号基波($\bm {f}_{\bm{0}}$)电压对次谐波($\bm {2f}_{\bm{0}}$)电流的影响,从而能够选择最佳晶体管条件,以实现高效的$\bm {f}_{\bm{0}}$振荡和$\bm {2f}_{\bm{0}}$产生。为了获得良好的相位噪声和输出功率性能,提出了不需要额外元件抑制多余模式的八振芯耦合方案。该耦合振荡器采用65纳米CMOS工艺制造,在0.75 v电源电压下产生0.407 mW输出功率,而功耗为40.5 mW。测量到振荡器的dc- rf效率为1%,相位噪声为- 88 dBc/Hz,在1mhz偏移时,其优值为- 179 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 225-GHz Coupled Harmonic Oscillator With −179 dBc/Hz FoM in 65-nm CMOS
This letter presents a 225-GHz coupled second harmonic oscillator. The single-ended oscillator core utilizes a piecewise linear model with a phase factor to analyze the impact of the large-signal fundamental ($\bm {f}_{\bm {0}}$) voltages on the second-harmonic ($\bm {2f}_{\bm {0}}$) current, enabling the selection of optimal transistor conditions for efficient $\bm {f}_{\bm {0}}$ oscillation and $\bm {2f}_{\bm {0}}$ generation. To achieve good phase noise and output power performance, the coupling scheme of eight oscillator cores is proposed without extra components to suppress unwanted modes. Fabricated in a 65-nm CMOS process, the coupled oscillator generates 0.407-mW output power while consuming 40.5 mW from a 0.75-V power supply voltage. The measured dc-to-RF efficiency of the oscillator is 1% and the phase noise is −88 dBc/Hz at 1 MHz offset, resulting in a figure of merit of −179 dBc/Hz.
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来源期刊
IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS
CiteScore
7.10
自引率
9.40%
发文量
102
期刊介绍: IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.
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