IEEE Microwave and Wireless Components Letters最新文献_第5页

Guidelines for Accurate in-House Electroplating and 3-D-Printing Processes Applied to mm-Wave Devices 应用于毫米波器件的精确内部电镀和3d打印工艺指南

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3182868

A. Tamayo-Domínguez, P. Sánchez-Olivares, A. Camacho-Hernandez, J. Fernández-González

{"title":"Guidelines for Accurate in-House Electroplating and 3-D-Printing Processes Applied to mm-Wave Devices","authors":"A. Tamayo-Domínguez, P. Sánchez-Olivares, A. Camacho-Hernandez, J. Fernández-González","doi":"10.1109/LMWC.2022.3182868","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182868","url":null,"abstract":"This letter details the metallization process of 3-D-printed WR-28 and WR-10 waveguides using electroplating. The 3-D printing technique is stereolithography, so the printed parts are plastic-based. A two-step metallization process is followed: a premetallization with nickel spray to make the part conductive and a subsequent electroplating process, emphasizing the chemical compounds and quantities needed to improve the result obtained, as well as the metallization times and currents applied on the parts. In addition, manufacturing deviations are measured and compensated. The results obtained are compared with simulations and commercial waveguide sections. Measurements show <inline-formula> <tex-math notation=\"LaTeX\">$S_{11}$ </tex-math></inline-formula> below −33 and −21 dB for WR-28 and WR-10, respectively. Measured average losses are around 1 dB/m for WR-28 and 4 dB/m for WR-10, which is equivalent to copper with an effective surface roughness lower than <inline-formula> <tex-math notation=\"LaTeX\">$0.4~mu text{m}$ </tex-math></inline-formula>.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1267-1270"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46674747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Vertically Printable Evanescent Mode Filters 可垂直打印的渐逝模式滤波器

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3187781

Lucas Polo‐López, S. Sirci, Antoine Calleau, S. Capdevila, G. Toso, E. Menargues, M. García-Vigueras

引用次数: 7

A New Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method for Electromagnetics 一种新的电磁学显隐混合间断Galerkin时域方法

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3178377

Xing Li, Li Xu, Zhongkun Yang, Bin Li

引用次数: 2

Low-Cost Third-Harmonic Mixer for -Band Retrodirective System Applications 用于频带反向系统的低成本三次谐波混频器

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3184627

Jiang-jie Zeng, X. Lin, Yihong Su, Yong Yang, Peng Mei, Zhongbo Zhu

引用次数: 3

-Band Class-B VCO in 22 nm FD-SOI With Inductive Source Degeneration of the Tail Current Source -22nm FD-SOI中带B类VCO的电感源尾流源退化

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3178916

Farhad Bozorgi, Elham Rahimi, Mengqi Cui, P. Sen

{"title":"-Band Class-B VCO in 22 nm FD-SOI With Inductive Source Degeneration of the Tail Current Source","authors":"Farhad Bozorgi, Elham Rahimi, Mengqi Cui, P. Sen","doi":"10.1109/LMWC.2022.3178916","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178916","url":null,"abstract":"In this work, a voltage-controlled oscillator (VCO) in the <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band has been introduced that uses the proposed technique named “inductive source degeneration of the tail current source.” The contribution of this work is that the auxiliary resonator is placed differently than the conventional works so that it leads to a more compact solution without affecting the phase noise (PN). Based on the simulation results, for the same device sizes and power consumption, the proposed Class-B method reduces the PN by 1.5 dB than the conventional one at 1 MHz offset from 24 GHz center frequency. VCO has been fabricated on a die area of 0.026 mm2 in the 22 nm fully depleted silicon on insulator (FD-SOI) technology. The measurement was done in the free-running mode, and the results show a PN of −122.4 dBc/Hz at 10 MHz offset from the center frequency of 23.8 GHz. The power consumption of the VCO core is 14.4 mW with 1 V supply voltage. According to the measurement results, this work achieves <inline-formula> <tex-math notation=\"LaTeX\">${text {FoM}_{A}}$ </tex-math></inline-formula>, a figure of merit which considers the VCO core area, of −194.2 dBc/Hz at 10 MHz offset from the center frequency, featuring state-of-the-art among the CMOS VCOs in the <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1351-1354"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41774800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Broadband Contactless 90° Waveguide Transition With a U-Shaped Choke Groove 带U形扼流槽的宽带90°非接触波导过渡

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3177897

Bo Zhang, Yong Zhang, Fei Xiao

引用次数: 4

A Broadband Power Amplifier With Multifrequency Impedance Matching 一种多频阻抗匹配宽带功率放大器

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3187998

Hui Wang, J. Nan, Mifang Cong, Jianwei Ren

{"title":"A Broadband Power Amplifier With Multifrequency Impedance Matching","authors":"Hui Wang, J. Nan, Mifang Cong, Jianwei Ren","doi":"10.1109/LMWC.2022.3187998","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3187998","url":null,"abstract":"This letter proposes a multifrequency impedance matching broadband power amplifier (PA) design, which is different from the traditional PA impedance value changes with the change in the operating frequency. This method selects the impedance value of the transistor device through the load–pulling system. Then, matching networks composed of a cascade of microstrip lines are used to match the device impedance to 50 $Omega $ . The matching networks are optimized to provide the desired impedance transfer characteristic at multiple frequencies. This design approach effectively reduces the amplifiers’ output impedance variation over the covered frequency range. The overall structure of the PA is simple, and the bandwidth is expanded while ensuring performance. Based on this method, a broadband PA was designed and fabricated using the self-developed laterally-diffused metal-oxide semiconductor (LDMOS) transistor of the Institute of Microelectronics of the Chinese Academy of Sciences. The measurement results show that the saturated output power of the designed PA in the range of 0.5–2.3 GHz is greater than 41 dBm. The drain efficiency is 43.62%–55.38%. When the average output power is 34.3 dBm, the adjacent channel leakage ratio (ACLR) is also better than −31.58 dBc.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1339-1342"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41630884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A 135–150 GHz High-Power Frequency Tripler With Filtering Matching Network 带滤波匹配网络的135 - 150ghz大功率三倍频器

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3177252

Cheng Guo, Xiaozhu Wen, Zixian Wu, Yang Yu, Wenxuan Wu, A. Zhang, Xubo Song, S. Liang, Zhihong Feng

引用次数: 4

A Broadband Coaxial Line-to-SIW Transition Using Aperture-Coupling Method 利用孔径耦合方法实现宽带同轴线到SIW的转换

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3182933

Anil Kumar Nayak, I. Filanovsky, K. Moez, A. Patnaik

引用次数: 2

Modeling Microwave Connectors Used as Signal Launchers for Microstrip Lines of Different Widths 用于不同宽度微带线信号发射器的微波连接器建模

IF 3 2区工程技术

IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3179927

Yojanes Rodríguez-Velásquez, R. Murphy‐Arteaga, R. Torres‐Torres

引用次数: 1