IEEE Microwave and Wireless Components Letters最新文献

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Miniaturized Dual-Band Filter Using Dual-Mode Dielectric Waveguide Resonator 采用双模介质波导谐振器的小型双频带滤波器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3193424
Zuo Xu, Yongle Wu, Qingxiang Dong, Weimin Wang
{"title":"Miniaturized Dual-Band Filter Using Dual-Mode Dielectric Waveguide Resonator","authors":"Zuo Xu, Yongle Wu, Qingxiang Dong, Weimin Wang","doi":"10.1109/LMWC.2022.3193424","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3193424","url":null,"abstract":"This letter presents a novel miniaturized dual-band bandpass filter (BPF) using a dual-mode dielectric waveguide resonator (DWR). The DWR is a cylinder dielectric block with the surface being silver-coated. The two modes are TM010 and TM011 modes, which are used to construct the two passbands. The frequency of them can be adjusted by changing the radius and the height of the cylinder DWR and the frequency space can be controlled independently. The BPF is composed of three cylindrical cavities, which are arranged in an equilateral triangle. The three cavities construct a cascaded trisection (CT) unit, which creates a transmission zero (TZ) at the upper side of the two passbands. Finally, a dual-band BPF using DWR is simulated, manufactured, and measured to exhibit the feasibility of the proposed design. Their results are in good agreement, showing good performance, such as miniaturization, good return loss (RL), and upper stopband selectivity.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1411-1414"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47607648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 39-GHz Phase-Inverting Variable Gain Power Amplifier in 65-nm CMOS for 5G Communication 用于5G通信的65纳米CMOS 39 ghz反相变增益功率放大器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3180999
Xuexue Zhang, Xiaokang Niu, Qin Chen, Xin Chen, Depeng Cheng, Jing Feng, Jun Feng, Lianming Li
{"title":"A 39-GHz Phase-Inverting Variable Gain Power Amplifier in 65-nm CMOS for 5G Communication","authors":"Xuexue Zhang, Xiaokang Niu, Qin Chen, Xin Chen, Depeng Cheng, Jing Feng, Jun Feng, Lianming Li","doi":"10.1109/LMWC.2022.3180999","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3180999","url":null,"abstract":"This letter presents a 39-GHz phase-inverting variable gain power amplifier (VGPA) for 5G communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the VGPA realized the dB-linear gain control characteristic as well as 180° phase inversion. At 0°/180° phase states, the 39-GHz VGPA achieves the maximum gain of 38.7/38.9 dB with gain tuning range of 5.6/5.2 dB, respectively. Over 38–43 GHz, the phase inversion error is limited within 5.9°, and the rms phase error is less than 3.6°/2.2°. Meanwhile, with the metal interleaving coplanar transformer matching network, this VGPA achieves 17.7/17.6-dBm Psat and 13.2/13.36-dBm OP1 dB, with the power added efficiency (PAE) of 35%/34.5% and 13.6%/14.4% at the saturation and 1-dB compression points, respectively. Over the gain control states, the OP1 dB fluctuation is less than 0.3 dB. Implemented in a 65-nm CMOS process, the proposed VGPA consumes 150 mW with a chip area of 0.3 mm2.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1303-1306"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48784304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Coaxial to Air-Filled Substrate Integrated Waveguide Transition With Near-Octave Bandwidth 近倍频宽的同轴到充气基板集成波导跃迁
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3179641
S. Choudhury, A. Mohan, M. Bozzi
{"title":"A Coaxial to Air-Filled Substrate Integrated Waveguide Transition With Near-Octave Bandwidth","authors":"S. Choudhury, A. Mohan, M. Bozzi","doi":"10.1109/LMWC.2022.3179641","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179641","url":null,"abstract":"In this letter, a wideband coaxial to air-filled waveguide transition is proposed, which has been realized by the substrate integrated waveguide (SIW) technology. The present design incorporates several air-filled vias of varying hole diameter to efficiently match the impedance over a wide operating bandwidth in the dominant TE10 mode, hence replacing the need for dielectric taper or larger footprint. A transition prototype has been designed and tested to validate the results. The measured return loss is better than 15 dB and insertion loss of 1 ± 0.1 dB over the band of interest (9.5–15 GHz), hence portraying a near-octave bandwidth from the proposed design.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1275-1278"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47210835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Tangent Approximation Coefficient Extraction Method for Instantaneous Sample Indexed Magnitude-Selective Affine Behavioral Model 一种瞬时样本索引幅度选择仿射行为模型的切线近似系数提取方法
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3186036
Zhuang Xu, Jianfeng Zhai, Kai Wang, Jiawen Liu, Xuefa Zhai, Yan Guo, Chao Yu
{"title":"A Tangent Approximation Coefficient Extraction Method for Instantaneous Sample Indexed Magnitude-Selective Affine Behavioral Model","authors":"Zhuang Xu, Jianfeng Zhai, Kai Wang, Jiawen Liu, Xuefa Zhai, Yan Guo, Chao Yu","doi":"10.1109/LMWC.2022.3186036","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186036","url":null,"abstract":"The coefficients of digital predistortion (DPD) models are often extracted by the least square (LS) method, which has high computational complexity because of the operations of the large matrix. In this letter, a low complexity coefficient extraction method for instantaneous sample indexed magnitude-selective affine (I-MSA) model is proposed. The proposed method uses the tangent of the midpoint of the piecewise function to fit the curve. Therefore, the LS coefficient extraction only needs a small amount of data near the midpoint, rather than using all the data in the segmented region. Simulation and experimental results have confirmed that compared with the original LS method, the proposed method has similar modeling accuracy and linearization performance, but the computational complexity of coefficient extraction is greatly reduced.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1375-1378"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42906613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2-Bit Voltage-Controlled Oscillator (VCO) for Multiband Wireless Applications 用于多波段无线应用的2位压控振荡器(VCO)
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3182020
S. Hamidi, D. Dawn
{"title":"A 2-Bit Voltage-Controlled Oscillator (VCO) for Multiband Wireless Applications","authors":"S. Hamidi, D. Dawn","doi":"10.1109/LMWC.2022.3182020","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182020","url":null,"abstract":"This letter presents a fully-integrated 2-bit CMOS voltage-controlled oscillator (VCO) along with a 2-bit buffer, which delivers the highest RF output power among recently reported state-of-the-art to the best of the authors’ knowledge. The proposed 2-bit VCO is designed and fabricated in a <inline-formula> <tex-math notation=\"LaTeX\">$0.18-mu text{m}$ </tex-math></inline-formula> CMOS process with a die size of 1.2 mm <inline-formula> <tex-math notation=\"LaTeX\">$times$ </tex-math></inline-formula> 1.2 mm, which covers four frequency bands of interest. Fine-tuning at each of the four frequency bands is also obtained by utilizing two varactors. The proposed 2-bit VCO delivers a single-ended output power of 6.5/6.8/10.6/12.5 dBm at 0.930/1.157/1.436/1.917 GHz, respectively. This 2-bit VCO can cover frequency ranges of 930–1005, 1046–1157, 1248–1436, and 1540–1917 MHz, thus providing a total frequency bandwidth of 751 MHz. The proposed 2-bit VCO at each frequency band demonstrates −99, −93, −90, and −86 dBc/Hz for phase noise, and −150, −150, −160, and −168 dBc/Hz for figure-of-merit (FOM), respectively.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1307-1310"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43444815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 208–233-GHz Frequency Doubler With 1.1% Power-Added Efficiency in 28-nm CMOS 208–233 GHz倍频器,在28 nm CMOS中具有1.1%的功率添加效率
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3180082
Hai-Hong Fu, Kai Li, Kaixue Ma
{"title":"A 208–233-GHz Frequency Doubler With 1.1% Power-Added Efficiency in 28-nm CMOS","authors":"Hai-Hong Fu, Kai Li, Kaixue Ma","doi":"10.1109/LMWC.2022.3180082","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3180082","url":null,"abstract":"This letter presents a fully integrated frequency doubler in the TSMC 28-nm CMOS technology. MOS transistor capacitor neutralization is introduced in the differential driving amplifier, which shows better robustness than MOM capacitor neutralization under PVT variations. Besides, a stacked transformer-based balun is designed to achieve good balance performance. The effect of dummy metal on the performance of the proposed balun is also discussed. The measured results show that the 3-dB bandwidth is 25 GHz (208–233 GHz) and the peak power-added efficiency is 1.1% with a dc power consumption of 26.4 mW at 222 GHz. The peak conversion gain is −7.2 dB and the variation in conversion gain is less than 1 dB within −7- to 1-dBm input power range. Moreover, the chip size is $492times 412,,mu text{m}^{2}$ , including GSG and DC pads.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1311-1314"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49169521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
5.85-mW 3.1–23.7-GHz Two-Stage CMOS VGA With 2.53-dB NF Using Concurrent Current Steering 5.85 mw 3.1 - 23.7 ghz两级CMOS VGA与2.53 db NF使用并发电流转向
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3189593
Jin-Fa Chang, Yo‐Sheng Lin
{"title":"5.85-mW 3.1–23.7-GHz Two-Stage CMOS VGA With 2.53-dB NF Using Concurrent Current Steering","authors":"Jin-Fa Chang, Yo‐Sheng Lin","doi":"10.1109/LMWC.2022.3189593","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3189593","url":null,"abstract":"A low-power and low noise-figure (NF) 3.1–23.7-GHz CMOS variable-gain amplifier (VGA) is presented. The VGA composes of a complimentary common-source (CCS) first stage, followed by a common-source (CS) second stage. Low power and NF and wideband <inline-formula> <tex-math notation=\"LaTeX\">$S_{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula> are achieved due to the current-reused CCS input stage with multiple inductive impedance matching and gain compensation. A large gain tuning range (with low NF) is achieved due to the concurrent gate–voltage tuning (or current steering) of the first and the second stages. The VGA consumes 5.85 mW (at <inline-formula> <tex-math notation=\"LaTeX\">$V_{mathrm {ctrl}}$ </tex-math></inline-formula> of 1 V) and achieves excellent 3-dB bandwidth (<inline-formula> <tex-math notation=\"LaTeX\">$f_{3,mathrm {dB}}$ </tex-math></inline-formula>) of 20.6 GHz (3.1–23.7 GHz), maximum <inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula> of 11.9 dB, minimum NF (NFmin) of 2.53 dB, average NF (NFavg) of 3.97 dB, small group delay (GD) variation of ±16.5 ps, and input third-order intercept point (IIP3) of −6.5 dBm. Moreover, the VGA achieves a decent gain tuning range of 23.4 dB (−5.4 to 18 dB) for <inline-formula> <tex-math notation=\"LaTeX\">$V_{mathrm {ctrl}}$ </tex-math></inline-formula> of 0.6–1.6 V. The chip area is 0.364 mm2.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1331-1334"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48509057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Wide-Range Frequency and Bandwidth Reconfigurable Filter 一种紧凑型宽频带可重构滤波器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3178722
Mingen Tian, Zhihe Long, Lijun Feng, Leilei He, Tianliang Zhang
{"title":"A Compact Wide-Range Frequency and Bandwidth Reconfigurable Filter","authors":"Mingen Tian, Zhihe Long, Lijun Feng, Leilei He, Tianliang Zhang","doi":"10.1109/LMWC.2022.3178722","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178722","url":null,"abstract":"This letter proposes a wide-range reconfigurable bandpass filter (WRBPF) based on the cross-shape triple-mode resonator. Varactor diodes and switching diodes are utilized at the ends of the resonator and the positions of external coupling, which combines the two working modes of the low-frequency band and high-frequency band, greatly broaden the tunable range of the center frequency (<inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula>). When the 3-dB bandwidth of WRBPF is 180 MHz, <inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula> can be adjusted from 0.78 to 1.93 GHz, and the relative adjustment range is 84.9%. When <inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula> is 1.355 GHz, the absolute bandwidth can be adjusted from 110 to 950 MHz, and the relative bandwidth adjustment range is 8.1%–70.1%. Moreover, the circuit size of WRBPF is only <inline-formula> <tex-math notation=\"LaTeX\">$0.29,,lambda g,,times 0.22,,lambda g$ </tex-math></inline-formula>. The experimental results show that WRBPF has not only a simple structure but also an excellent performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1283-1286"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42024341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at - and -Band 带和带多层LCP膜带方向滤波器的频分复用器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3177606
Mengfa Wang, Baoqing Zhang, Zhaolin Li, Yiming Wang, Qinglei Guo, Weihong Liu, Y. Yashchyshyn, Aimin Song, Yifei Zhang
{"title":"Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at - and -Band","authors":"Mengfa Wang, Baoqing Zhang, Zhaolin Li, Yiming Wang, Qinglei Guo, Weihong Liu, Y. Yashchyshyn, Aimin Song, Yifei Zhang","doi":"10.1109/LMWC.2022.3177606","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3177606","url":null,"abstract":"A quasi-reflectionless frequency division multiplexer (FDM) with directional filters (DFs) in multilayer liquid crystal polymer (LCP) substrates is proposed for <inline-formula> <tex-math notation=\"LaTeX\">$E$ </tex-math></inline-formula>- and <inline-formula> <tex-math notation=\"LaTeX\">$W$ </tex-math></inline-formula>-band applications. The in-series cascaded DFs are designed at 74, 84, and 94 GHz, each of which comprises two microstrip lines in the first layer, two pairs of coupling slots in the second layer, and loop resonators in the third layer. The distance between DFs is optimized for suppressing reflection and insertion losses, and the asymmetric distribution of DFs is designed to obtain a low profile. The experimental data demonstrate a 3-dB passband of 8.3%, 8.8%, and 9.7% centered at 74, 84, and 94 GHz, respectively, for the proposed FDM, showing a good match with the simulation. The corresponding insertion loss is measured as 3.63, 3.4, and 2.72 dB at 74, 84, and 94 GHz, respectively. The proposed device may find many applications in multiband and ultrawideband communication and radar systems.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"21 2","pages":"1287-1290"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41306191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low-Resolution Direct Digital Synthesis Transmitter Architecture Using Dithering for Multiband 5G NR Mobile Applications 一种用于多频带5G NR移动应用的低分辨率直接数字合成发射机结构
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3182662
You-Huei Chen, Shu-Chen Lin, Jui-Hsin Hung, Hao-Shun Yang, Jau-Horng Chen, Y. Chen
{"title":"A Low-Resolution Direct Digital Synthesis Transmitter Architecture Using Dithering for Multiband 5G NR Mobile Applications","authors":"You-Huei Chen, Shu-Chen Lin, Jui-Hsin Hung, Hao-Shun Yang, Jau-Horng Chen, Y. Chen","doi":"10.1109/LMWC.2022.3182662","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182662","url":null,"abstract":"This letter presents a low-resolution multiband transmitter architecture using direct digital synthesis (DDS) with dithering. Modern modulated signals constructed by a low-resolution digital-to-analog converter (DAC) suffer from quantization errors and distortions. The proposed technique reduces the quantization problems with the use of a proper oversampling ratio (OSR) and the dithering technique. This technique has lower cost and lower complexity compared to conventional transmitters while maintaining linearity performance. A 50-MHz 5G NR 256-quadratic-amplitude modulation (QAM) signal is used for concept validation at bands n1, n40, and n50. The proposed work achieved the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of under −30 dBc and 3.5%, respectively. A single 3-bit 10-GS/s radio frequency (RF) DAC is used where the performance is similar to a conventional transmitter using a pair of 5-bit baseband in-phase and quadrature (IQ) DACs.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1359-1362"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47828607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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