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A 120–140-GHz LNA in 250-nm InP HBT 250nm InP HBT中的120 - 140 ghz LNA
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3189607
Vikas Chauhan, N. Collaert, P. Wambacq
{"title":"A 120–140-GHz LNA in 250-nm InP HBT","authors":"Vikas Chauhan, N. Collaert, P. Wambacq","doi":"10.1109/LMWC.2022.3189607","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3189607","url":null,"abstract":"This letter presents a $D$ -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors’ knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1315-1318"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42561492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers 一个低温cmos低噪声放大器2.3至8.5 K噪声温度在20 K高集成射电天文接收机
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3178579
A. Sheldon, L. Belostotski
{"title":"A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers","authors":"A. Sheldon, L. Belostotski","doi":"10.1109/LMWC.2022.3178579","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178579","url":null,"abstract":"This letter presents a 0.9–1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 ± 2.4 dB gain (<inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula>) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and <inline-formula> <tex-math notation=\"LaTeX\">$| S_{11}| < -10$ </tex-math></inline-formula> dB.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1319-1322"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42646818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Behavioral Model With Multiple States Based on Deep Neural Network for Power Amplifiers 基于深度神经网络的功率放大器多状态行为模型
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3186062
Xin Hu, Shubin Xie, Xin Ji, Xuming Chang, Yi Qiu, Bo Li, Zhijun Liu, Weidong Wang
{"title":"Behavioral Model With Multiple States Based on Deep Neural Network for Power Amplifiers","authors":"Xin Hu, Shubin Xie, Xin Ji, Xuming Chang, Yi Qiu, Bo Li, Zhijun Liu, Weidong Wang","doi":"10.1109/LMWC.2022.3186062","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186062","url":null,"abstract":"Digital predistortion is widely used to compensate the nonlinear distortion of power amplifiers (PAs). Among the digital predistortion methods, the polynomial or deep neural networks (DNNs) models are only adopted with one specific state. When the operating conditions of PAs change, it is necessary to retrain and update the coefficients of the PA model. The generalization ability of the DNN models cannot be presented. To address this issue, this letter proposes one new modeling method that can build one generalized PA model with multiple states based on DNN. This method embeds a set of coding vectors representing corresponding states to build the generalized model. Compared with the traditional DNN model, experimental results show that the proposed method can construct the PA model containing multiple states while ensuring good modeling performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1363-1366"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48827000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Low Running Complexity Model for Digital Predistortion of RF Power Amplifiers 射频功率放大器数字预失真的低运行复杂度模型
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3181204
Renlong Han, W. Qiao, Chengye Jiang, Lei Su, Guichen Yang, Jing-tao Tan, Falin Liu
{"title":"A Low Running Complexity Model for Digital Predistortion of RF Power Amplifiers","authors":"Renlong Han, W. Qiao, Chengye Jiang, Lei Su, Guichen Yang, Jing-tao Tan, Falin Liu","doi":"10.1109/LMWC.2022.3181204","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181204","url":null,"abstract":"In this letter, two basis function multiplexing-based behavioral modeling methods for digital predistortion (DPD) of RF power amplifiers (PAs) are proposed to reduce the running complexity of DPD. The proposed full basis-propagating selection (FBPS) model and reduced-complexity FBPS (RC-FBPS) model give two reasonable ways to multiplex even-order basis functions, extending the basis-propagating selection (BAPS) model which only uses basis function delay and odd-order basis functions. The experimental results confirm that both the proposed FBPS and RC-FBPS models can achieve a good tradeoff between running complexity and performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1371-1374"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42534532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Contactless Air-Filled Mode Selective Transmission Line 非接触充气式选择性输电线路
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3179872
Xiao-he Cheng, Tingting Xie, Yuan Yao, Yaohui Yang, Ting Zhang, Junsheng Yu, Xiao-dong Chen
{"title":"Contactless Air-Filled Mode Selective Transmission Line","authors":"Xiao-he Cheng, Tingting Xie, Yuan Yao, Yaohui Yang, Ting Zhang, Junsheng Yu, Xiao-dong Chen","doi":"10.1109/LMWC.2022.3179872","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179872","url":null,"abstract":"An air-filled mode selective transmission line (AF-MSTL) consisting of an opened groove gap waveguide (GWG) and an inverted coplanar waveguide (CPW) is proposed in this letter. By using the electromagnetic band gap (EBG) structure, the electrical contacts of AF-MSTL are not required during the assembly process. To verify the design, the AF-MSTL prototype, connected to two designed grounded-CPW (GCPW) to AF-MSTL transitions to build a back-to-back structure, has been fabricated and measured. A measured insertion loss of 0.2857 dB/mm at 110 GHz is achieved, which is lower than the dielectric filled (DF) MSTL of 0.5012 dB/mm at 110 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1291-1294"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43069402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficient and Compact Tri-Band Rectifier With Large Frequency Ratio for WPT 用于WPT的高效紧凑的大频率比三频整流器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3182059
Zhen Yue, Xin Xu, Shun Li, Yu Zhu, X. Lin
{"title":"Efficient and Compact Tri-Band Rectifier With Large Frequency Ratio for WPT","authors":"Zhen Yue, Xin Xu, Shun Li, Yu Zhu, X. Lin","doi":"10.1109/LMWC.2022.3182059","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182059","url":null,"abstract":"In this letter, an efficient and compact tri-band rectifier with large frequency ratio is proposed, which adopts a novel low-cost direct current (dc)-pass filter structure in the design. Three large frequency ratio rectifiers are combined together by using diode arrays with a frequency-selective topology without additional impedance matching networks. The dc-pass filter is composed of microstrip line structures cascaded low-cost lumped components, which can effectively suppress the high-order harmonics at high- and low-frequency points while reducing the circuit size and costs of large frequency ratio. For validation, the proposed rectifier working at 0.915, 2.45, and 5.8 GHz is fabricated with the dimensions of 29.5 mm $times21.3$ mm. The measured results show that the RF-dc power conversion efficiency (PCE) reaches 72.6%, 71.8%, and 73.5% at 0.915, 2.45, and 5.8 GHz, respectively, when the input power is 19 dBm. Compared with traditional multiband rectifiers, the proposed topology exhibits merits of compact size, high efficiency, and large frequency ratio.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1355-1358"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48662311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
220–320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology 基于先进130纳米BiCMOS技术的220 - 320 ghz j波段4路功率放大器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3181407
Eissa Mohamed, G. Fischer, Thomas Mausolf, H. Rücker, A. Malignaggi, G. Kahmen
{"title":"220–320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology","authors":"Eissa Mohamed, G. Fischer, Thomas Mausolf, H. Rücker, A. Malignaggi, G. Kahmen","doi":"10.1109/LMWC.2022.3181407","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181407","url":null,"abstract":"A power combined wideband power amplifier (PA) covering the <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band (220–320 GHz) is presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 power splitters with amplification stages in-between. The four split signals drive four output stages, which have their outputs combined within a 4-way zero-degree combiner. The splitting and combining networks also incorporate impedance matching. After de-embedding the I/O pads and baluns of 2 dB loss at each side, the PA achieves a gain of 20 dB at the middle of the band and a minimum gain of 17 dB at 320 GHz with I/O return losses below −5 dB. The PA records a saturated output power ranging from 9.5 to 14.5 dBm across the <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band. It consumes 710 mW from a 3 V supply which corresponds to a drain efficiency (<inline-formula> <tex-math notation=\"LaTeX\">$eta _{d}$ </tex-math></inline-formula>) of 3.15% at 270 GHz. The presented PA achieves twice better bandwidth with 1.5 times better <inline-formula> <tex-math notation=\"LaTeX\">$eta _{d}$ </tex-math></inline-formula> than the state-of-the-art silicon-based amplifiers above 200 GHz. To the authors’ knowledge, this is the first PA covering the whole <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band in silicon technologies.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1335-1338"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45840837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Equivalent Circuit-Based Coupling Modeling of Double Bond Ribbons Interconnection Variation in Electronic Packaging 基于等效电路的电子封装中双键带互连变化的耦合建模
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3181058
Jun Tian, Yucheng Teng, Ruining Li, Yijiang Zhou, Daxing Zhang, S. Liu, Song Xue, Kabin Lin, Meng Wang, G. Leng, Congsi Wang
{"title":"Equivalent Circuit-Based Coupling Modeling of Double Bond Ribbons Interconnection Variation in Electronic Packaging","authors":"Jun Tian, Yucheng Teng, Ruining Li, Yijiang Zhou, Daxing Zhang, S. Liu, Song Xue, Kabin Lin, Meng Wang, G. Leng, Congsi Wang","doi":"10.1109/LMWC.2022.3181058","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181058","url":null,"abstract":"A method for modeling the interconnection and signal transmission performance of double bond ribbons with configuration variation has been proposed. Arc interval function parameterization has been used to define the geometry of bond ribbons. The coupling model was created using the equivalent circuit approach, taking into account the mutual coupling between two ribbons. The average relative error of return loss is 9.21%, and the average relative error of insertion loss is 0.23%. The accuracy of the model has been verified, and the envelope interval of the signal transmission performance considering the variation of the interconnection configuration has been calculated.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1367-1370"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45311360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 19.1–25.5-GHz Compact Dual-Mode Rotary Traveling-Wave Oscillator With 195.4-dBc/Hz FoM 19.1 - 25.5 ghz紧凑型双模旋转行波振荡器，195.4 dbc /Hz FoM
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3183446
Hongkun Li, Yiyang Shu, Changting Pi, Xun Luo
{"title":"A 19.1–25.5-GHz Compact Dual-Mode Rotary Traveling-Wave Oscillator With 195.4-dBc/Hz FoM","authors":"Hongkun Li, Yiyang Shu, Changting Pi, Xun Luo","doi":"10.1109/LMWC.2022.3183446","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3183446","url":null,"abstract":"In this letter, a dual-mode rotary traveling-wave oscillator (RTWO) is proposed to achieve wide operation bandwidth and multiple phases. Two twisted differential transmission lines are coupled together to form the dual-mode traveling-wave resonator. Sixteen pairs of back-to-back inverters and capacitors are connected to the resonators to introduce the multicore multi-phase operation. The mode switches are used to control the coupling direction and select the desired mode without degrading the quality factor. Verified in a 40-nm CMOS process, the proposed dual-mode RTWO exhibits a dual-mode frequency range from 19.1 to 25.5 GHz with the core size of 0.08 mm $^{textbf {2}}$ . The measured 10-MHz phase noise at 25.30 and 22.12 GHz is −129.6 and −131.5 dBc/Hz, respectively. The best FoM and FoMT are 186.2 and 195.4 dBc/Hz, respectively.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1347-1350"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43289221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe 0.13-μm硅锗四路组合的A波段功率放大器
IF 3 2区 工程技术
IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI: 10.1109/LMWC.2022.3178933
Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy
{"title":"A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe","authors":"Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy","doi":"10.1109/LMWC.2022.3178933","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178933","url":null,"abstract":"This letter presents a four-way power combined <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band power amplifier (PA) in 0.13-<inline-formula> <tex-math notation=\"LaTeX\">$mu text{m}$ </tex-math></inline-formula> SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1343-1346"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46827480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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