IEEE Journal of Selected Topics in Quantum Electronics最新文献_第9页

IEEE Journal of Selected Topics in Quantum Electronics Information for Authors IEEE 量子电子学选题期刊作者须知

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3438635

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IEEE Journal of Selected Topics in Quantum Electronics Publication Information IEEE 量子电子学选题期刊》出版信息

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IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3438631

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Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers 带有 ITO 和纳米多孔 GaN 包层的 InGaN 基蓝色激光二极管的结构设计

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3464530

Jinbin Yang;Meixin Feng;Xiujian Sun;Shuming Zhang;Masao Ikeda;Qian Sun;Hui Yang

{"title":"Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers","authors":"Jinbin Yang;Meixin Feng;Xiujian Sun;Shuming Zhang;Masao Ikeda;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3464530","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3464530","url":null,"abstract":"AlGaN is usually used as the cladding layers for GaN-based laser diodes, but it features a low refractive index difference and large lattice mismatch with GaN, resulting in weak optical confinement and large tensile stress, and hence greatly affecting the laser performance. In response, indium tin oxide (ITO) and nanoporous GaN (NP-GaN) with low refractive indices have emerged as promising alternatives. In this study, we conducted simulations to assess the impact of the ITO and NP-GaN thicknesses on device performance through the finite-difference time-domain method. Furthermore, we investigated the influence of nanopore distribution within the NP-GaN, finding that the nanopore size and arrangement near the waveguide layer play key roles. Based on these insights, we propose a novel laser structure with ITO and NP-GaN cladding layers, achieving an 18% increase in the optical confinement factor, along with reductions of 13% in absorption loss and 14% in threshold gain compared to conventional laser diodes utilizing AlGaN cladding layers. It is of great interest to the III-nitride semiconductors and semiconductor laser communities.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Call for Papers: Advances in Neurophotonics for Monitoring Brain Function 征集论文：用于监测大脑功能的神经光子学研究进展

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3463889

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Discrete Mode Laser Diodes: Design Equations and Applications in Nonlinear Optics 离散模式激光二极管：非线性光学中的设计方程与应用

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-19 DOI: 10.1109/JSTQE.2024.3465349

Trevor J. Stirling;Bilal Janjua;Amr S. Helmy

{"title":"Discrete Mode Laser Diodes: Design Equations and Applications in Nonlinear Optics","authors":"Trevor J. Stirling;Bilal Janjua;Amr S. Helmy","doi":"10.1109/JSTQE.2024.3465349","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3465349","url":null,"abstract":"Frequency selective structures, in particular gratings, are useful to create single-mode laser diodes, however they introduce losses which can be detrimental for many applications. A theoretical framework to design Discrete Mode Laser Diodes (DMLDs) using gratings with the lowest loss possible while still achieving single-mode operation, is developed. A version of DMLDs using surface gratings is then designed and fabricated in Bragg reflection lasers (BRLs), which support second order nonlinear conversion within the laser cavity. These DMLDs show single mode operation with \u0000<inline-formula><tex-math>$>$</tex-math></inline-formula>\u000040 dB SMSR, and 0.22 nm/mA, and 0.49 nm/\u0000<inline-formula><tex-math>$^circ$</tex-math></inline-formula>\u0000C current and temperature tunability. Difference frequency generation with 59.8%W \u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000 cm\u0000<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula>\u0000 efficiency is then performed to demonstrate the ability of the DMLD to support parametric optical processes within diode laser cavities.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142376948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Editorial Advanced Modulators and Integration Beyond Traditional Platforms 编辑本段先进调制器和集成超越传统平台

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-17 DOI: 10.1109/JSTQE.2024.3454781

Patrick Lo Guo Qiang;Alan Wang;Juerg Leuthold;Haisheng Rong;Tingyi Gu;Anna Lena;Xi Xiao;Bruce Wessels

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Parallel On-Chip Physical Random Number Generator Based on Self-Chaotic Dynamics of Free-Running Broad-Area VCSEL Array 基于自由运行宽域 VCSEL 阵列自恰动力学的并行片上物理随机数发生器

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-16 DOI: 10.1109/JSTQE.2024.3462489

Hang Lu;Omar Alkhazragi;Yue Wang;Tien Khee Ng;Boon S. Ooi

{"title":"Parallel On-Chip Physical Random Number Generator Based on Self-Chaotic Dynamics of Free-Running Broad-Area VCSEL Array","authors":"Hang Lu;Omar Alkhazragi;Yue Wang;Tien Khee Ng;Boon S. Ooi","doi":"10.1109/JSTQE.2024.3462489","DOIUrl":"10.1109/JSTQE.2024.3462489","url":null,"abstract":"Random numbers, as a cornerstone in the interconnected digital world, are used in secure cryptographic protocols for commercial transactions, computing, and communications. Instead of the traditional deterministic pseudorandom numbers, physical random number generation (RNG) is currently being investigated by leveraging the chaotic dynamics of semiconductor lasers for improved security, speed, and compactness. However, those RNG approaches suffer from discrete and expensive components with limited scalability due to the enormous footprint imposed by the edge-emitting configuration, which increases the cost and impedes practical use in integrated devices. Herein, we demonstrated a parallel chip-scale RNG by first harnessing the self-chaotic dynamics of free-running broad-area vertical-cavity surface-emitting lasers (BA-VCSELs). The intense mode interaction within the broad-area cavity provides a robust foundation for ultrafast dynamics, allowing for high-security and high-speed RNG. Comparative analysis with a small-area quasi-single-mode VCSEL (QSM-VCSEL) confirms the efficacy of achieving high-speed RNG with hundreds of Gb/s from a single BA-VCSEL channel and 2 Tb/s from four channels as a proof-of-concept device. Given the easy fabrication and high scalability of VCSELs, this finding opens avenues for low-cost, massively parallel high-speed RNG chips with photodetector integration, unveiling opportunities for fields demanding unprecedented RNG rates and high levels of cybersecurity.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10681270","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Optimization of Combined Coherent Gain-Switch Pulsing in a Large Array of Semiconductor Lasers 优化大型半导体激光器阵列中的相干增益开关脉冲组合

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-13 DOI: 10.1109/JSTQE.2024.3460738

Olivier Spitz;Luis E. Maldonado-Castillo;Mark A. Berrill;Yehuda Braiman

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Ion Implantation Damage Recovery in GeSn Thin Films GeSn 薄膜中的离子注入损伤恢复

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-10 DOI: 10.1109/JSTQE.2024.3457154

Shangda Li;Shang Liu;Hryhorii Stanchu;Grey Abernathy;Baohua Li;Shui-Qing Yu;Xiaoxin Wang;Jifeng Liu

{"title":"Ion Implantation Damage Recovery in GeSn Thin Films","authors":"Shangda Li;Shang Liu;Hryhorii Stanchu;Grey Abernathy;Baohua Li;Shui-Qing Yu;Xiaoxin Wang;Jifeng Liu","doi":"10.1109/JSTQE.2024.3457154","DOIUrl":"10.1109/JSTQE.2024.3457154","url":null,"abstract":"Germanium-tin (GeSn) alloys are promising materials for infrared photonics due to their tunable direct bandgap and compatibility with silicon technology. However, implantation doping of GeSn layers to achieve more sophisticated doping profiles faces challenges, particularly in restoring crystallinity after ion implantation. In this work, we investigate the recrystallization of ion-implanted GeSn thin films through rapid thermal annealing (RTA) and laser annealing. We propose a model for Sn diffusion pathways that lead to surface segregation based on distinct surface segregation patterns in GeSn layers with varying degrees of amorphization. Our results demonstrate that RTA at 400 °C effectively restores the crystallinity for GeSn thin films with up to 10.7 at.% Sn composition, despite a small amount of Sn surface segregation, while 532 nm wavelength CW laser annealing at a threshold power density above 52 kW/cm\u0000<sup>2</sup>\u0000 also achieves recrystallization without Sn segregation. These findings contribute to understanding Sn segregation mechanisms and optimizing recrystallization conditions for GeSn after implantation, advancing its potential for infrared photonics applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Modeling and Simulation of Electrostatics of Ge$_{text{1-x}}$Sn$_{text{x}}$ Layers Grown on Ge Substrates 在 Ge 基底上生长的 Ge1-xSnx 层的静电建模与仿真

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-09 DOI: 10.1109/JSTQE.2024.3456590

Siddhant Gangwal;Shunda Chen;Tianshu Li;Tzu-Ming Lu;Dragica Vasileska

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