IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Corrections to “High-Performance Modulators Employing Organic Electro-Optic Materials on the Silicon Platform”","authors":"Wolfgang Freude;Alexander Kotz;Hend Kholeif;Adrian Schwarzenberger;Artem Kuzmin;Carsten Eschenbaum;Adrian Mertens;Sidra Sarwar;Peter Erk;Stefan Bräse;Christian Koos","doi":"10.1109/JSTQE.2025.3546113","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3546113","url":null,"abstract":"We apologize for transferring an outdated version of our internal table to the published document [1]. The following entries are to be corrected in Table II: •Row 5 (Strip-WG MZM) ○Column 2: Replace “line rate 110 Gbit/s” by “112 Gbit/s” ○Column 7 and 8: Remove entries at “a” and “UπLa” ○Column 10: Replace “Tg = 185 °C” by “194 °C” •Row 7 (Slot-WG MZM) ○Column 7: Replace “a = 9.3 dB/mm” by “3.9 dB/mm” ○Column 8: Replace “UπLa = 7.4 VdB” by “1.2 VdB” •Row 8 (Strip-WG MZM…) ○Column 1: Replace “Strip-WG MZM (Si/InP hybrid)” by “Slot-WG MZM (EO/InP hybrid)” ○Column 7: Remove entry at “a” •Row 10 (POH IQ-M) ○Column 7 and 8: Remove entries at “a” and “UπLa” •(Last) Row 11 (POH MZM) ○Column 2: Replace “(16%)” by “(19%)” ○Column 5: Replace “UπL = 0.162 Vmm” by “0.12 Vmm” ○Column 7 and 8: Remove entries at “a” and “UπLa”","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10931836","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Confluence of Photonics and Artificial Intelligence","authors":"Young-Kai Chen","doi":"10.1109/JSTQE.2025.3552430","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3552430","url":null,"abstract":"Over the past decades, significant advances have been made in the fields of photonic technologies, artificial intelligence, and machine learning techniques. Recent AI progress in language models, perception and self-learning capability has had a significant impact on a wide range of communities. The new photonics enhances AI with faster data processing, reduced energy consumption, and improved interconnects, enabling more efficient and powerful AI systems. In this paper, we will highlight the synchroneity of these advances from performance enhancement of AI processing by photonics and advanced photonics with AI processing, leading to new photonic neural networks for future photonic AI processors.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-14"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143927356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling-Based Optimization of a Single-Photon Avalanche Diode: Towards Integrated Quantum Photonics Devices Operating at Room-Temperature","authors":"Eo-Jin Kim;Hyun-Seung Choi;Doyoon Eom;Joo-Hyun Kim;Ping Zheng;Eng-Huat Toh;Elgin Quek;Deepthi Kandasamy;Yew Tuck Chow;Woo-Young Choi;Myung-Jae Lee","doi":"10.1109/JSTQE.2025.3552673","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3552673","url":null,"abstract":"Single-photon avalanche diodes (SPADs) are emerging as a cost-effective and practical alternative to superconducting nanowire single-photon detectors (SNSPDs), especially for integrated quantum photonics. While SNSPDs exhibit excellent performance such as fast response time and high detection efficiency, their reliance on a cryogenic cooling system results in high cost and power consumption as well as limited suitability for portable devices. In contrast, SPADs can operate at room temperature, eliminating the need for a bulky cooling system and significantly reducing the overall cost. Compared to SNSPDs, however, further optimization of SPAD performance is highly required. In this paper, the SPAD guard-ring (GR) structure is optimized with accurate SPAD device modeling and TCAD simulation, aiming to enhance their suitability for integrated quantum photonics applications. It is demonstrated that the GR-optimized SPAD can reduce internal series resistance and extend its avalanche multiplication region. As a result, the avalanche multiplication region is expanded by approximately 20%, and the peak photon detection probability at a wavelength of 425 nm is increased by 48% . This improvement is achieved while maintaining a low dark count rate of 3.9 cps/μm² at an excess bias voltage of 3 V. Additionally, the reduced series resistance enables an increase in current gain and a faster slew rate, which results in much lower timing jitter.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10930770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lateral Quantum-Confined Stark Effect for Integrated Quantum Dot Electroabsorption Modulators","authors":"Tommy Murphy;Christopher A. Broderick;Frank H. Peters;Eoin P. O'Reilly","doi":"10.1109/JSTQE.2025.3552024","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3552024","url":null,"abstract":"Advances in III-V on Si quantum dot (QD) growth have enabled monolithic integration of high-performance electrically-pumped lasers on Si, as an enabling component for Si photonics. Another critical component is the electroabsorption modulator (EAM), which exploits the quantum-confined Stark effect (QCSE) to achieve high-speed modulation of laser signals. Conventional quantum well (QW) EAMs exploit a “vertical” QCSE via top and bottom electrical contacts. Rapid advancements in planar photonic integrated circuit technology motivate development of laterally-contacted EAMs, which offer benefits including reduced parasitic capacitance. The QCSE cannot be achieved via a lateral field in a QW, but can in a QD due to the three-dimensional carrier confinement. Here, theoretical analysis of the lateral-field QCSE in 1.3 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m In<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>Ga<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>As/GaAs QDs is undertaken. Comparing the QCSE produced by vertical and lateral electric fields for realistic QD morphology a robust lateral-field QCSE is demonstrated, with the optical absorption edge redshifting more rapidly vs. field strength than in a conventional QW-EAM. It is shown that lateral-field QD-EAM performance is expected to be strongly sensitive to the spectral linewidth of the band edge absorption, and can also depend upon the in-plane orientation of the lateral electric field. The impact of QD morphology – the base shape, aspect ratio and composition profile – is also quantified. It is demonstrated that In<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>Ga<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>As/GaAs QDs possessing high aspect ratios and low absorption linewidths are well-suited to develop lateral-field QD-EAMs. This suggests leveraging III-V on Si epitaxy to integrate EAMs with lasers or single-photon sources to realize high-speed Si photonic integrated circuits for applications in datacomms and linear optical quantum computing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10930521","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143848813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AI Networking Challenges – A System Perspective","authors":"Siamak Amiralizadeh;Jonathan K. Doylend","doi":"10.1109/JSTQE.2025.3570941","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3570941","url":null,"abstract":"The advent and adoption of AI/ML has led to a demand for increased computing power and the hardware and network architectures to support them. Photonics is emerging as a promising technology to address this demand; however, to do so it must reinvent itself to meet the unique challenges of the hyperscale AI cluster, and these requirements will vary for different applications within the cluster architecture. This work analyzes some of the requirements for optical interconnects and their adoption within the cluster.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144178895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the Conduction Mechanism in Si-Based Light-Initiated Multi-Gate Semiconductor Switches","authors":"Huiru Sha;Chongbiao Luan;Longfei Xiao;Hongwei Liu;Jianqiang Yuan;Xun Sun;Yangfan Li;Jian Jiao;Biao Yang;Deqiang Li;Xiufang Chen;Xiangang Xu;Hongtao Li","doi":"10.1109/JSTQE.2025.3570698","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3570698","url":null,"abstract":"In this paper, software is used to simulate the conduction characteristics of silicon-based light-initiated multi-gate semiconductor switches. The switching processes of silicon-based light-initiated single-gate semiconductor switches and multi-gate semiconductor switches are compared. The transient state distribution characteristics of carriers during the switching process are analyzed, and the transport mechanism of carriers in the switches is investigated. The electron–hole pairs generated by a laser in the P-base region undergo both transverse diffusion and longitudinal transmission. The light-initiated multi-gate semiconductor switches exhibit shorter carrier transverse diffusion times and larger opening areas, resulting in increased maximum current and the current response speed after switch conduction. Moreover, we analyze the influence of different laser energies and distributions modes on the light-initiated multi-gate semiconductor switch. Lower laser energy activates the J₁ junction but cannot trigger the J₃ junction of the switch. Consequently, the carrier concentration remains low, and the switch does not fully open. Compared with a 980 nm laser diode (with a pulse width of 200 ns), a 980 nm Gaussian laser (with a half-peak width of 10 ns) enables faster switch activation.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144178894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Re-Configurable, Photonic-Wire-Bonded Integrated Circuit for Degenerate and Non-Degenerate Photon Pair Generation","authors":"Abdelrahman E. Afifi;Malcolm Haynes;Sudip Shekhar;Lukas Chrostowski;Jeff F. Young","doi":"10.1109/JSTQE.2025.3570453","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3570453","url":null,"abstract":"A fundamental challenge associated with parametric sources is the fact that the conversion efficiency from the pump field to the quantum field is typically quite low, such that the residual pump light must be effectively filtered from the channels that carry the quantum photonic states. Here, we present an integrated silicon photonic circuit that can perform parametric generation, pump rejection, and wavelength de-multiplexing (WDM) of quantum correlated (both degenerate and non-degenerate) photon pairs at telecommunication wavelengths. The circuit utilizes an all-pass micro-ring resonator (MRR) as the photon pair source, and three separate 4-port contra-directional couplers (CDCs) as filters. One of the three filters acts as a pump reject filter, and the other two as WDM filters. The WDM filters have two different center wavelengths and two heaters attached to them for tuning. The chip is connected on opposite sides to two fiber arrays using photonic wire bonds to facilitate alignment-free operation using four distinct filter configurations for generating both degenerate and non-degenerate photon pairs. The best coincidence-to-accidental ratio (CAR) for the non-degenerate pairs is 1070 at an estimated pair generation rate (PGR) of 2.1 kHz at the output of the MRR. The maximum CAR for the degenerate photon pairs is 348 at an estimated on-chip PGR of 6.8 kHz.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Imaging of Microvascular Function in the Brain","authors":"Kazuto Masamoto","doi":"10.1109/JSTQE.2025.3550356","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3550356","url":null,"abstract":"Maintaining adequate cerebral blood flow is essential for normal brain function. Cerebral arteries are responsible for providing sufficient blood supply, which is dependent on systemic blood pressure and thus cardiac output. Cerebral capillaries play a critical role in delivering blood to meet the local needs of neural activity. Their narrow lumen interacts with blood cells, creating resistance to blood flow in the parenchymal tissue. Therefore, the relationship between arterial blood pressure and capillary resistance is critical in determining blood perfusion in the brain. However, the regulatory mechanism of capillary resistance has received less attention compared to the management of arterial blood pressure in maintaining healthy cerebral perfusion. This article summarizes the methodological contributions of optical imaging to the characterization of capillary resistances by microvascular function in the brain, including: i) three-dimensional imaging and quantification methods used in preclinical studies to determine spatial variations in microvascular structures in the cortex, ii) fluorescence imaging techniques for mapping the temporal dynamics of microvascular flow, and iii) understanding microvascular function in response to global changes induced by systemic physiology and local variations in neural network activities. Finally, potential technical advances in optical tools for diagnosis of brain microvascular function are discussed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Passive Daytime Radiative Cooling: From Sole Function to Multifunctionality","authors":"Yang Liu;Yi Zheng","doi":"10.1109/JSTQE.2025.3548551","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3548551","url":null,"abstract":"Passive daytime radiative cooling (PDRC), simultaneously reflecting sunlight and emitting infrared radiation heat to the cold outer, offers a promising alternative to traditional mechanical-based cooling in current electricity-intensive world. The continuously upgraded functional PDRC materials have further promoted the application of radiation cooling technology in real-world applications. This review explores the design evolution of PDRC materials, structures, and systems from sole-function to multifunctional designs, emphasizing their potential to achieve both high solar reflectance and strong thermal emittance for optimal cooling performance. Among them, multifunctional PDRC materials or systems with self-cleaning, fire-resistant, switchable, and evaporated-coupled characteristics are presented. Future challenges and opportunities for advancing PDRC materials are also discussed, aiming to guide the development of scalable solutions that can facilitate the large-scale production and application of this sustainable cooling technology.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 6: Photon. for Climate Chng. Mitigation and Adapt.","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessing Radiative Cooling Textiles for Extreme Thermal Conditions","authors":"Diya Patel;Pranto Karua;Kai Zhou;Lili Cai","doi":"10.1109/JSTQE.2025.3567021","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3567021","url":null,"abstract":"Global warming necessitates energy-efficient thermal management solutions, and radiative cooling has emerged as a promising strategy for buildings and wearable applications. Despite significant advancements, the efficacy of these materials under extreme heat conditions remains underexplored. Here, we present passive radiative daytime cooling (PDRC) -coated high-performance textiles based on glass fiber (GF), carbon fiber (CF), and Kevlar (KV), integrating superior optical, thermal, and mechanical properties. Our experiments demonstrate that these textiles achieve high solar reflectivity (93--97%) and infrared emissivity (95--96%), enabling an average of 8.3 °C of cooling under sunlight compared to cotton. Additionally, these coated textiles offer exceptional durability, maintaining performance under various environmental stressors with minimal degradation. Analytical modeling, combined with experimental testing, further underscores the critical role of high near infrared reflectance in high-temperature environments like fire, providing important insights for extending their applicability to personal protective equipment, emergency wearables, and structural thermal management in extreme conditions.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 6: Photon. for Climate Chng. Mitigation and Adapt.","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10985781","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144139938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}