IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Composition Quantification of SiGeSn Alloys Through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation With Atom Probe Tomography","authors":"Haochen Zhao;Shang Liu;Suho Park;Xu Feng;Zhaoquan Zeng;James Kolodzey;Shui-Qing Yu;Jifeng Liu;Yuping Zeng","doi":"10.1109/JSTQE.2024.3456439","DOIUrl":"10.1109/JSTQE.2024.3456439","url":null,"abstract":"Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful technique for elemental compositional analysis and depth profiling of materials. However, it encounters the problem of matrix effects that hinder its application. In this work, we introduce a pioneering ToF-SIMS calibration method tailored for SixGeySnz ternary alloys. SixGe1-x and Ge1-zSnz binary alloys with known compositions are used as calibration reference samples. Through a systematic SIMS quantification study of SiGe and GeSn binary alloys, we unveil a linear correlation between secondary ion intensity ratio and composition ratio for both SiGe and GeSn binary alloys, effectively mitigating the matrix effects. Extracted relative sensitivity factor \u0000<italic>(RSF)</i>\u0000 value from SixGe1-x (0.07 < x < 0.83) and Ge1-zSnz (0.066 < z < 0.183) binary alloys are subsequently applied to those of SixGeySnz (0.011 < x < 0.113, 0.863 < y < 0.935 and 0.023 < z < 0.103) ternary alloys for elemental compositions quantification. These values are cross-checked by Atom Probe Tomography (APT) analysis, an indication of the great accuracy and reliability of as-developed ToF-SIMS calibration process. The proposed method and its reference sample selection strategy in this work provide a low-cost as well as simple-to-follow calibration route for SiGeSn composition analysis, thus driving the development of next-generation multifunctional SiGeSn-related semiconductor devices.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon Carbide Soliton Microcomb Generation for Narrow-Grid Optical Communications","authors":"Jingwei Li;Ruixuan Wang;Haipeng Zheng;Zhensheng Jia;Qing Li","doi":"10.1109/JSTQE.2024.3455548","DOIUrl":"10.1109/JSTQE.2024.3455548","url":null,"abstract":"A soliton microcomb can play a crucial role in narrow-grid optical communications by replacing many independently operated lasers in wavelength-division multiplexing systems. In this work, we designed and demonstrated power-efficient soliton microcombs with 100-GHz free spectral range in an integrated 4H-SiC platform. The combination of enabling technologies, including efficient fiber coupling (3 dB insertion loss), high-quality-factor microrings (intrinsic quality factors up to 5.7 million), and the employment of the Raman effect for adiabatic accessing of the soliton state, has enabled the demonstration of soliton pump power as low as 6 mW while supporting comb powers above −20 dBm per line near the pump wavelength.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Future of Optical Modulation","authors":"Di Liang;Mengyue Xu;Long Chen;Haisheng Rong;Andreas Bechtolsheim","doi":"10.1109/JSTQE.2024.3448914","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3448914","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 4: Adv. Mod. and Int. beyond Si and InP-based Plt.","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10666944","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142143665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transmission Electron Microscopy Studies of Bufferless Epitaxial GeSn on (0001) Sapphire","authors":"Jiechao Jiang;Nonso Martin Chetuya;Joseph H Ngai;Gordon J. Grzybowski;Efstathios I. Meletis","doi":"10.1109/JSTQE.2024.3454954","DOIUrl":"10.1109/JSTQE.2024.3454954","url":null,"abstract":"Epitaxial growth of GeSn films directly on (0001) sapphire substrates, has not been considered as a feasible task. Here, an ultra-thin and a 1 μm thick Ge\u0000_1-x\u0000Sn\u0000_x\u0000 (x≤0.1) film were deposited on (0001) sapphire substrates at 475 °C and 367 °C, respectively, through remote plasma-enhanced chemical vapor deposition (RPECVD). The ultra-thin Ge\u0000_1-x\u0000Sn\u0000_x\u0000 film (deposited at 475 °C) exhibits a distinct epitaxial/twin mushroom-like island morphology with a height ranging from 30-45 nm and a lateral width ranging from 40 - 200 nm. The Ge\u0000_1-x\u0000Sn\u0000_x\u0000 islands are covered by a ∼4 nm thick surface layer of Sn-rich amorphous material and present an atomically sharp and robust interface with the substrate. The epitaxial Ge\u0000_1-x\u0000Sn\u0000_x\u0000 lattices coherently join with the Al layer of the sapphire substrate. The 1 μm thick Ge\u0000_1-x\u0000Sn\u0000_x\u0000 film (deposited at 367 °C) consists of a thin epitaxial/twin layer below a nanocrystalline columnar layer. The nanocrystalline grains have varying Sn content that exceeds that in the epitaxial structure. The epitaxial/twin layer in this film has an ∼1 nm thick highly disrupted near amorphous layer at the interface. Quasiperiodic, two-dimensional hexagonal networks of misfit dislocations are formed at the interfaces of both films to accommodate the misfit strain. The dislocation periodic length was 13.3 Å and 13.1 Å for the films deposited at 475 °C and 367 °C, respectively. The epitaxial structures in both films have an identical orientation relationship of (111)\u0000_GeSn\u0000//(0001)\u0000_Sapphire\u0000, \u0000<inline-formula><tex-math>$[ {1bar{1}0} ]$</tex-math></inline-formula>\u0000_GeSn\u0000//\u0000<inline-formula><tex-math>$[ {2bar{1}bar{1}0} ]$</tex-math></inline-formula>\u0000_Sapphire\u0000, \u0000<inline-formula><tex-math>$[ {21bar{1}} ]$</tex-math></inline-formula>\u0000_GeSn\u0000//\u0000<inline-formula><tex-math>$[ {1bar{1}00} ]$</tex-math></inline-formula>\u0000_Sapphire\u0000 with the substrate, exhibiting lattice mismatches of ∼15% between the (220) GeSn and the \u0000<inline-formula><tex-math>$( {11bar{2}0} )$</tex-math></inline-formula>\u0000 Al\u0000₂\u0000O\u0000₃\u0000 along the interface plane and -24% between the (111) GeSn and the (0003) Al\u0000₂\u0000O\u0000₃\u0000 planes along the film growth direction. The observed microstructures provide valuable feedback that can be used to optimize the RPECVD process for better quality epitaxial GeSn on (0001) sapphire substrates with no buffer layer required.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 $rm mu$m","authors":"Marco Gaulke;Maximilian C. Schuchter;Nicolas Huwyler;Matthias Golling;Benjamin Willenberg;Christopher R. Phillips;Ursula Keller","doi":"10.1109/JSTQE.2024.3454521","DOIUrl":"10.1109/JSTQE.2024.3454521","url":null,"abstract":"Vertical emitting optically pumped semiconductor laser technology in the GaSb material system, operating in the short-wave infrared (SWIR) regime, has made significant advancements recently. This paper reviews the key achievements leading to the first demonstration of a passively modelocked optically pumped thin-disk semiconductor laser, where both the saturable absorber and the gain quantum wells are integrated into a single semiconductor chip, known as the Modelocked Integrated eXternal-cavity Surface Emitting Laser (MIXSEL). This GaSb-based MIXSEL operates at a center wavelength of 2 \u0000<inline-formula><tex-math>$rm mu$</tex-math></inline-formula>\u0000m, supporting both single and dual-comb operations, with an average output power of 30 to 50 mW, pulse repetition rates of approximately 4 GHz, and picosecond pulse durations. It enables initial proof-of-principle dual-comb spectroscopy measurements. For this, we optimized continuous wave (cw) Vertical External Cavity Surface Emitting Laser (VECSEL) operation at 2 \u0000<inline-formula><tex-math>$rm mu$</tex-math></inline-formula>\u0000m without an intracavity heatspreader, enhanced group delay dispersion (GDD) compensation, and introduced an additional pump mirror integration. Compared to previous results, we achieved a significant performance increase with pump-DBR 2-\u0000<inline-formula><tex-math>$rm mu$</tex-math></inline-formula>\u0000m VECSEL with an average output power of 6 W, an optical pump efficiency of 30% and a reduced thermal resistance of 1.9 K/W. Additionally, the better GDD compensation improved modelocking at 2 \u0000<inline-formula><tex-math>$rm mu$</tex-math></inline-formula>\u0000m with a SESAM (Semiconductor Saturable Absorber Mirror), producing near-transform-limited femtosecond pulses with a duration of 331 fs, an average power of 30 mW at a pulse repetition rate of 2.77 GHz. Successful integration of the saturable absorber within the MIXSEL chip required matching of the cavity mode sizes on both the SESAM and the VECSEL chip. This paper details the optimization processes and resulting performance enhancements that mark a significant milestone in the development of GaSb-based thin disk laser technology.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-14"},"PeriodicalIF":4.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10664454","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Mode VCSELs With Zn-Diffusion Apertures for Applications in Co-Packaged Optics Systems","authors":"Cheng-Wei Lin;Zhe-Wei Hsu;Jian-Wei Tung;Xin Chen;Chia-Hsuan Wang;Dong Hao;Jia-Liang Yen;J.-J. Liu;Ming-Jun Li;Jin-Wei Shi","doi":"10.1109/JSTQE.2024.3454318","DOIUrl":"10.1109/JSTQE.2024.3454318","url":null,"abstract":"High-speed vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (SM) output power and strong immunity to optical feedback play a vital role in further improving the package density in co-packaged optics (CPO) systems. Here, by optimizing the structure of VCSEL cavities with Zn-diffusion apertures inside, we can simultaneously improve the SM output power and speed of 850 nm VCSELs. With this novel structure we can achieve a record-high SM output power of 16 mW and a wide 3-dB electrical-to-optical (E-O) bandwidth of 18 GHz. Furthermore, excellent VCSEL performance can be obtained by varying the aperture size for high-speed operations, such as wide E-O bandwidth (27 GHz), high SM power (6.7 mW), low-RIN (−137 dB/Hz), and invariant 56 Gbps eye patterns under strong optical feedback (−6 dB). Error-free transmission can be achieved at around 48 Gbit/sec through 500 and 200 m multi-mode and single-mode fibers, respectively, without the use of equalizers in the transmission channels.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power Scalability of 1.55-μm-Wavelength InP-Based Double-Lattice Photonic-Crystal Surface-Emitting Lasers With Stable Continuous-Wave Single-Mode Lasing","authors":"Yuhki Itoh;Takeshi Aoki;Kosuke Fujii;Hiroyuki Yoshinaga;Naoki Fujiwara;Makoto Ogasawara;Yusuke Sawada;Rei Tanaka;Kenichi Machinaga;Hideki Yagi;Masaki Yanagisawa;Masahiro Yoshida;Takuya Inoue;Menaka De Zoysa;Kenji Ishizaki;Susumu Noda","doi":"10.1109/JSTQE.2024.3454202","DOIUrl":"10.1109/JSTQE.2024.3454202","url":null,"abstract":"This paper reports on the power scalability of 1.55-μm-wavelength photonic crystal surface emitting lasers (PCSELs) utilizing the design flexibility of the double-lattice photonic crystal. By controlling in-plane optical coupling, we have achieved single-mode continuous-wave lasing with various device sizes ranging from 100 μm to 300 μm in diameter. The output power exceeds 500 mW for a device size of 300 μm, and wall-plug efficiencies of all fabricated devices exceed 18%. Highly stable single-mode lasing with a side-mode suppression ratio over 60 dB is obtained even at the maximum output powers. Narrow circular beams are obtained, and the divergence angles decrease with increasing device size, ranging from 0.55 degrees to 0.23 degrees in FWHM for device sizes from 100 μm and 300 μm, respectively.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wavelength-Stabilized Multi-Active Region DBR and DFB Broad-Area and Ridge-Waveguide Lasers for High Peak-Power Pulsed Operation","authors":"Heike Christopher;Nor Ammouri;Maximilian Beier;Jörg Fricke;Arnim Ginolas;Jan-Philipp Koester;Armin Liero;Andre Maaßdorf;Sonja Nozinic;Hans Wenzel;Andrea Knigge","doi":"10.1109/JSTQE.2024.3454353","DOIUrl":"10.1109/JSTQE.2024.3454353","url":null,"abstract":"For LiDAR applications, compact, robust, and mass-producible light sources generating high-peak power nanosecond-long pulses are essential. This paper presents an investigation of power scaling in semiconductor lasers via the number of epitaxially stacked active regions in a single vertical waveguide supporting a higher order mode, chip length, output aperture width, and lateral waveguide design. All devices are wavelength-stabilized using surface gratings integrated either as a passive section at the rear facet of the diode laser as a distributed-Bragg-reflector (DBR) or along the full length of the chip in a distributed feedback (DFB) design. A 4 mm long broad-area (BA) DBR laser with a stripe width of 200 μm and five active regions delivered approximately 171 W at 80 A, a factor of 6.6 more peak pulse power than the standard 6 mm long single active region DBR laser with 50 μm stripe width. A corresponding 3 mm long 3-active region DFB-BA laser achieved more than 125 W at 129 A. These BA lasers have a lateral beam propagation ratio M\u0000<inline-formula><tex-math>$^{2}approx$</tex-math></inline-formula>\u0000 30. In contrast, weakly tapered ridge waveguide (TRW) lasers were found to generate more than 20 W with an M\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000 of about 3 and an excellent lateral brightness of 24 W\u0000<inline-formula><tex-math>$cdot$</tex-math></inline-formula>\u0000 mm\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000mrad\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers","authors":"Soumava Ghosh;Guo-En Chang","doi":"10.1109/JSTQE.2024.3453252","DOIUrl":"10.1109/JSTQE.2024.3453252","url":null,"abstract":"GeSn lasers have emerged as a promising solution for on-chip lasers in silicon photonics. This study systematically investigated the threshold characteristics of electrically-driven Ge\u0000_1–<i>x</i>\u0000Sn\u0000_<i>x</i>\u0000 lasers on Si operating at room temperature, focusing on Sn content and defect density. Theoretical models were developed to calculate band structure, carrier occupation, free-carrier absorption (FCA), and threshold current density. The results indicate that at low Sn contents, where the GeSn active layer is an indirect bandgap material, increasing Sn content decreases the energy difference (Δ\u0000<italic>E</i>\u0000_ΓL\u0000) between indirect and direct conduction band edges, thereby reducing transparent carrier density. Conversely, when the GeSn active layer is transformed into a direct bandgap material with a sufficiently high Sn content, the transparent hole density is minimally affected by further Sn increases. Additionally, increasing defect densities increases FCA, suppressing net gain, highlighting the need for high material quality in Ge\u0000_1–<i>x</i>\u0000Sn\u0000_<i>x</i>\u0000 with defect densities below \u0000<bold>1</b>\u0000×\u0000<bold>10⁷cm</b>\u0000⁻\u0000<bold>²</b>\u0000 for efficient lasing. Moreover, while increasing Sn content initially reduces threshold current density, further increments lead to higher Auger recombination current at longer lasing wavelengths, limiting continuous decrease. Therefore, an optimal Sn content of 13% achieves the lowest threshold current density. This study provides valuable guidelines for developing efficient electrically-driven Ge\u0000_1–<i>x</i>\u0000Sn\u0000_<i>x</i>\u0000 lasers for practical room-temperature applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarization-Stabilized 1130 nm VCSEL Arrays: Performance and Scalability","authors":"Andrea Ott;Daniela Stange;Johanna Kolb;Alexander van der Lee;Tobias Pusch;Negar Gheshlaghi;Benjamin Gronau;Stephan Gronenborn;Roman Körner","doi":"10.1109/JSTQE.2024.3453489","DOIUrl":"10.1109/JSTQE.2024.3453489","url":null,"abstract":"This paper presents an in-depth evaluation of 1130 nm VCSEL devices, including single emitters and arrays produced using industrial III-V semiconductor fabrication processes. The study focuses on electro-optical performance and device longevity, revealing wall plug efficiencies of approximately 32% at 25 °C for single junction devices. A detailed comparison between polarization-stabilized and non-stabilized devices highlights that polarization-stabilized VCSELs maintain a consistent polarization extinction ratio of around −15 dB, regardless of their modal behavior. Additionally, we introduce a model predicting the scaling of arrays to achieve watt-level power outputs, optimizing optical aperture, pitch, and mesa count for specific applications. This analysis underlines the potential of these devices for advanced sensing and data transmission applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}