IEEE Journal of Selected Topics in Quantum Electronics最新文献_第10页

Editorial: SiGeSn Infrared Photonics and Quantum Electronics 红外光子学与量子电子学

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-02-07 DOI: 10.1109/JSTQE.2025.3531744

Jifeng Liu;Bruce “Chip” Claflin;Wei Du;Jay Mathews;Jose Menendez

引用次数: 0

Distribution of GHz Sequential Time-Bin Entanglement in a Metropolitan Fiber Network 城域光纤网络中GHz顺序时间盒纠缠的分布

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-02-06 DOI: 10.1109/JSTQE.2025.3539921

Martin Achleitner;Alessandro Trenti;Philip Walther;Hannes Huebel

{"title":"Distribution of GHz Sequential Time-Bin Entanglement in a Metropolitan Fiber Network","authors":"Martin Achleitner;Alessandro Trenti;Philip Walther;Hannes Huebel","doi":"10.1109/JSTQE.2025.3539921","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3539921","url":null,"abstract":"Efficient generation and high-quality distribution of entanglement is becoming increasingly more relevant in the field of quantum technologies, with important applications such as multiparty computation as well as quantum key distribution (QKD) on the rise. Quantum communication protocols based on entanglement offer an inherent quantum based randomness for key generation and provide in general higher security compared to prepare and measure implementations. Moreover, the future quantum internet will also be based on the distribution of entanglement for securely connecting quantum computers in a network. In this work we show the feasibility of using sequential time-bin entangled states for quantum key distribution in metropolitan networks using off-the-shelf components. The time-bin encoding ensures high fidelity distribution robust against random polarisation fluctuations occuring in optical fibers. Modulated laser pulses in the GHz frequency range are used to generate time-bin entangled photon pairs. The entangled photons are then sent over an about 30 km long (9.5 dB loss) fiber link within the Vienna fiber network, showing high degree of distributed entanglement with a measured 93% quantum visibility.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Photonics and Electronics for Optical Transceivers Supporting AI/ML Applications 支持AI/ML应用的光收发器集成光子学和电子学

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-02-06 DOI: 10.1109/JSTQE.2025.3539379

Peter Ossieur;Bart Moeneclaey;Gertjan Coudyzer;Joris Lambrecht;Jan Craninckx;Ewout Martens;Joris Van Driessche;Cedric Bruynsteen;Jonas De Busscher;Jakob Declercq;Ye Gu;Shengpu Niu;Tinus Pannier;Nishant Singh;Lucas Van Severen;Laurens Bogaert;Dennis Maes;Tom Vanackere;Ewoud Vissers;Jing Zhang;Sulakshna Kumari;Ruud Oldenbeuving;Xuebing Zhang;Gijs Van Elzakker;Joris Van Campenhout;Philippe Absil;Bart Kuyken;Xin Yin;Guy Torfs;Jeroen Missinne;Geert Van Steenberge;Gunther Roelkens;Johan Bauwelinck

{"title":"Integrated Photonics and Electronics for Optical Transceivers Supporting AI/ML Applications","authors":"Peter Ossieur;Bart Moeneclaey;Gertjan Coudyzer;Joris Lambrecht;Jan Craninckx;Ewout Martens;Joris Van Driessche;Cedric Bruynsteen;Jonas De Busscher;Jakob Declercq;Ye Gu;Shengpu Niu;Tinus Pannier;Nishant Singh;Lucas Van Severen;Laurens Bogaert;Dennis Maes;Tom Vanackere;Ewoud Vissers;Jing Zhang;Sulakshna Kumari;Ruud Oldenbeuving;Xuebing Zhang;Gijs Van Elzakker;Joris Van Campenhout;Philippe Absil;Bart Kuyken;Xin Yin;Guy Torfs;Jeroen Missinne;Geert Van Steenberge;Gunther Roelkens;Johan Bauwelinck","doi":"10.1109/JSTQE.2025.3539379","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3539379","url":null,"abstract":"The recent proliferation of artificial intelligence and machine learning applications relying on large language models is fueling unprecedented demand for compute capacity. Associated with this is a need to scale capacities of short-reach optical transceivers towards multiplex Terabit/s, while maintaining integration density (frontpanel or beachfront density) and energy efficiency (pJ/bit). One option to scale transceiver capacity is to increase the bandwidth per lane from today's 200 G to 400 G or even higher: coherent transceiver technology is then expected to play an ever more important role. Photonics and electronics with higher bandwidths beyond 100 GHz will play a crucial role. Integration of thin-film LiNbO3 modulator onto a Silicon Photonics platform is shown to be a viable option to meet the needs for new generations of optical transceivers. Front-end electronics such as linear modulator drivers and transimpedance amplifiers can rely on traveling-wave design approaches to allow continued bandwidth scaling despite (relative) slowing transistor speeds. Novel wireline data converter architectures can be used to overcome limitations of existing implementations. Maintaining signal integrity from photonics and electronics can be facilitated using both 2.5D and 3D integration approaches. While the introduction of novel materials and architectures will require time to further mature, optical transceivers operating at baudrates up to and beyond 200 Gbaud are now just beyond the horizon.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-16"},"PeriodicalIF":4.3,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Technological Approaches Addressing Reliable Output Power Limits in High Power Edge-Emitting Lasers 解决高功率边缘发射激光器可靠输出功率限制的技术途径

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-02-03 DOI: 10.1109/JSTQE.2025.3533568

Abdullah Demir;Ali Kaan Sünnetçioğlu;Kaveh Ebadi;Babak Olyaeefar

{"title":"Technological Approaches Addressing Reliable Output Power Limits in High Power Edge-Emitting Lasers","authors":"Abdullah Demir;Ali Kaan Sünnetçioğlu;Kaveh Ebadi;Babak Olyaeefar","doi":"10.1109/JSTQE.2025.3533568","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3533568","url":null,"abstract":"High-power edge-emitting lasers are essential in numerous applications due to their energy-efficient lasing and compact size. However, their reliable output power is often limited by catastrophic optical mirror damage (COMD), primarily caused by self-heating and elevated facet temperatures. Despite advancements in material growth, facet passivation, epitaxial design, and packaging, reliability remains a significant issue. This study introduces two innovative waveguide designs to mitigate self-heating and enhance reliable output power: a 2-section waveguide and a distributed waveguide (DWG). Both designs separate the heat-generating lasing region from the output facet by incorporating a passive section that is electrically isolated but optically connected to the laser section. The 2-section design places a long passive section near the facet, significantly reducing its temperature, while the DWG design employs periodic lasing and passive sections to enhance heat dissipation along an extended cavity length. Experimental results show that both designs effectively lower facet temperatures below the laser body temperature, enabling higher power operation. The 2-section lasers achieve COMD-free operation under high power, thereby improving reliability. These results demonstrate that advanced waveguide structures can significantly enhance the reliability of the laser output facet and pave the way for semiconductor lasers with significantly increased lifetime.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing External Cavity Laser Diode Performance Through Optimized Fano Spectrum Feedback Configuration 通过优化Fano光谱反馈配置增强外腔激光二极管性能

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-30 DOI: 10.1109/JSTQE.2025.3536449

Hongbo Qiao;Yunxiang Sun;Zhibiao Hao;Changzheng Sun;Lai Wang;Bing Xiong;Jian Wang;Hongtao Li;Yanjun Han;Lin Gan;Yi Luo

{"title":"Enhancing External Cavity Laser Diode Performance Through Optimized Fano Spectrum Feedback Configuration","authors":"Hongbo Qiao;Yunxiang Sun;Zhibiao Hao;Changzheng Sun;Lai Wang;Bing Xiong;Jian Wang;Hongtao Li;Yanjun Han;Lin Gan;Yi Luo","doi":"10.1109/JSTQE.2025.3536449","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3536449","url":null,"abstract":"Laser diodes with narrow linewidth are essential for optical communication, spectral analysis, and precision measurement. This study reinterprets the linewidth narrowing mechanism in external-cavity diode lasers (ECDLs) from a perspective that the noise-induced frequency fluctuations are suppressed by the rapidly varying phase in frequency domain introduced by the external cavity. We highlight the importance of the localized high slope in the rising edge of the feedback spectrum in forming stable narrow linewidth laser modes. Based upon this understanding, we introduce an alternative to traditional Lorentzian optical feedback. We demonstrated that asymmetric lineshapes, such as Fano, can serve as the optical feedback of ECDLs with enhanced performance. Theoretical analysis and numerical simulations reveal that Fano-based external cavity lasers, benefiting from a feedback spectrum with a steeper local slope than Lorentz-based cavities, can achieve superior linewidth narrowing under the same fabrication conditions. This study offers a novel approach for the design and application of narrow linewidth laser diodes.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143465729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Generative Inverse Approach Towards Silicon-Based Nano-Photonic Power Splitter Design Generation 一种基于硅基纳米光子功率分路器设计生成的生成逆方法

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-28 DOI: 10.1109/JSTQE.2025.3535573

Mahmud Elahi Akhter;Ibraheem Muhammad Moosa;Lubaba Tazrian Rahman;Mohammad Atiqul Islam;Sharnali Islam;Khaleda Ali

{"title":"A Novel Generative Inverse Approach Towards Silicon-Based Nano-Photonic Power Splitter Design Generation","authors":"Mahmud Elahi Akhter;Ibraheem Muhammad Moosa;Lubaba Tazrian Rahman;Mohammad Atiqul Islam;Sharnali Islam;Khaleda Ali","doi":"10.1109/JSTQE.2025.3535573","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3535573","url":null,"abstract":"In recent years, the design of chip-based photonic systems has significantly moved towards Artificial Intelligence-assisted data-driven methods instead of conventional intuition and simulation-based ones. The time-consuming nature of traditional chip-design methods, coupled with their insufficient flexibility to accommodate rapidly evolving integrated circuit requirements, contributes to this situation. In this work, we propose a novel generative model for the inverse design of nanophotonic power splitters. Our proposed model generates power splitters from arbitrary response spectra from 1.46 to 1.63 μm with a central wavelength of 1.55 μm. The model employs machine learning and a quadratic programming solver, which consists of a linear regressor and a mixed integer quadric programming solver. It is deterministic due to its generator being a quadratic programming solver. We empirically show that the generated structures have error margins within 10-4% and 2×10-4% for any given arbitrary response spectra. Furthermore, we also show that the model is capable of handling and generating Out-of-Distribution responses and their associated devices. Our code and dataset are available here.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143446310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Leveraging Continuously Differentiable Activation for Learning in Analog and Quantized Noisy Environments 利用连续可微激活在模拟和量化噪声环境中学习

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-27 DOI: 10.1109/JSTQE.2025.3534636

Vivswan Shah;Nathan Youngblood

{"title":"Leveraging Continuously Differentiable Activation for Learning in Analog and Quantized Noisy Environments","authors":"Vivswan Shah;Nathan Youngblood","doi":"10.1109/JSTQE.2025.3534636","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3534636","url":null,"abstract":"Real-world analog systems, such as photonic neural networks, intrinsically suffer from noise that can impede model convergence and accuracy for a variety of deep learning models. In the presence of noise, some activation functions behave erratically or even amplify the noise. Specifically, ReLU, an activation function used ubiquitously in digital deep learning systems, not only poses a challenge to implement in analog hardware but has also been shown to perform worse than continuously differentiable activation functions. In this paper, we demonstrate that GELU and SiLU enable robust propagation of gradients in analog hardware because they are continuously differentiable functions. To analyze this cause of activation differences in the presence of noise, we used functional interpolation between ReLU and GELU/SiLU to perform analysis and training of convolutional, linear, and transformer networks on simulated analog hardware with different interpolated activation functions. We find that in ReLU, errors in the gradient due to noise are amplified during backpropagation, leading to a significant reduction in model performance. However, we observe that error amplification decreases as we move toward GELU/SiLU, until it is non-existent at GELU/SiLU demonstrating that continuously differentiable activation functions are <inline-formula><tex-math>$sim 100times$</tex-math></inline-formula> more noise-resistant than conventional rectified activations for inputs near zero. Our findings provide guidance in selecting the appropriate activations to realize reliable and performant photonic and other analog hardware accelerators in several domains of machine learning, such as computer vision, signal processing, and beyond.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin Mechanisms in Gd-Doped GaN Implanted With Oxygen/Carbon at Room Temperature 室温下氧/碳注入gd掺杂GaN的自旋机制

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-27 DOI: 10.1109/JSTQE.2025.3534663

Vishal Saravade;Amirhossein Ghods;Chuanle Zhou;Ian Ferguson

{"title":"Spin Mechanisms in Gd-Doped GaN Implanted With Oxygen/Carbon at Room Temperature","authors":"Vishal Saravade;Amirhossein Ghods;Chuanle Zhou;Ian Ferguson","doi":"10.1109/JSTQE.2025.3534663","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3534663","url":null,"abstract":"Gadolinium-doped gallium nitride implanted with oxygen and carbon show carrier-mediated spin mechanisms at room temperature. As-grown Gd-doped GaN grown by metal-organic chemical vapor deposition using a tris(cyclopentadienyl) gadolinium precursor shows Ordinary Hall Effect and no ferromagnetism at room temperature. Upon O or C implantation in Gd-doped GaN, Anomalous Hall Effect that is indicative of carrier-mediated spin and ferromagnetism is observed. A good crystal quality is maintained even after implantation. O and C favor interstitial sites and occupy deep-level acceptor-type states in Gd-doped GaN. Room-temperature spin and ferromagnetism that is induced by gadolinium in Gd-doped GaN is activated by O and C that occupy interstitial sites. Carrier-mediated mechanism for spin functionalities shows potential for the control and manipulation of spin as a quantum state in gallium nitride. This makes GaGdN:O/C a potential semiconductor material base of interest for room temperature spintronics and quantum information science applications. In this paper, doping of O and C in Gd-doped GaN using ion implantation, structural characterization using X-ray diffraction, and spin-related measurement using Advanced Hall Effect are investigated, and corresponding discussions are made.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Thinned-Skull Cranial Window on Monitoring Cerebral Blood Flow Using Laser Speckle Contrast Imaging 薄颅窗在激光散斑造影监测脑血流中的作用

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-27 DOI: 10.1109/JSTQE.2025.3533950

Nadezhda Golubova;Ivan Ryzhkov;Konstantin Lapin;Evgeniya Seryogina;Andrey Dunaev;Viktor Dremin;Elena Potapova

{"title":"Effect of Thinned-Skull Cranial Window on Monitoring Cerebral Blood Flow Using Laser Speckle Contrast Imaging","authors":"Nadezhda Golubova;Ivan Ryzhkov;Konstantin Lapin;Evgeniya Seryogina;Andrey Dunaev;Viktor Dremin;Elena Potapova","doi":"10.1109/JSTQE.2025.3533950","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3533950","url":null,"abstract":"Studies on laboratory animals are a crucial step in a wide range of fundamental and applied scientific investigations. In addition to ensuring that research methods are chosen correctly, it is also necessary to use them properly in order to obtain the maximum amount of reliable information. In this study, we analyze and compare laser speckle contrast imaging (LSCI) data obtained simultaneously from the intact skull area and from the thinned skull area of the young laboratory rat (1.5-months-old), while additionally introducing a physiological challenge in the form of blood loss. We describe the experimental setup and materials used and also outline the signal processing approach. Finally, we present the results obtained and provide a discussion comparing our findings with studies conducted by other researchers, as well as addressing both the highlights and limitations of the study. In summary, the investigations conducted indicate that a cranial preparation is needed to record reliable LSCI data for cerebral perfusion, and it is also found that moderate blood loss does not reduce cerebral blood flow to the level of its autoregulation impairment.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CMOS Design of Ge-on-Si Single-Photon Avalanche Diode With Ultralow Noise and Jitter 具有超低噪声和抖动的硅基单光子雪崩二极管的 CMOS 设计

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2025-01-20 DOI: 10.1109/JSTQE.2025.3531878

Jau Yang Wu;Chi-En Chen;Chao-Hsin Wu;Gong-Ru Lin

{"title":"CMOS Design of Ge-on-Si Single-Photon Avalanche Diode With Ultralow Noise and Jitter","authors":"Jau Yang Wu;Chi-En Chen;Chao-Hsin Wu;Gong-Ru Lin","doi":"10.1109/JSTQE.2025.3531878","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3531878","url":null,"abstract":"We have proposed a modified structure called the “charge focusing” design of a single-photon avalanche diode, based on our previous work using TSMC's 0.18 μm HV CMOS technology. We have demonstrated that this modified structure can improve the electric field distribution in the photon absorption layer, which previously resulted in worse jitter performance. This modification enhances carrier collection efficiency and detector timing resolution, leading to better performance in various applications where the pre-modified structure had been used. Furthermore, we propose that the modified structure can also be combined with the Separate Absorption and Charge Multiplication (SACM) structure to achieve high photon detection efficiency at infrared wavelengths, by adding a Germanium (Ge) epitaxy layer on top of the silicon layer. Our simulations show that the charge focusing design brings many advantages, most notably reducing the electric field at the edge of the Ge layer in the SACM structure, which is commonly used in silicon photonic and CMOS technologies.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0