IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Design of the Waveguide Integrated GeSn PDs on a SiN Platform in $2,mathrm{mu m}$ Wavelength Band","authors":"Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng","doi":"10.1109/JSTQE.2024.3493913","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493913","url":null,"abstract":"Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photodetector(PD), remain relatively scarce. In this work, 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 for the Ge\u0000<inline-formula><tex-math>${_{0.86}}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>${_{0.14}}$</tex-math></inline-formula>\u0000 PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photonic integrated circuits (PIC).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Maria Tchernycheva;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3494245","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494245","url":null,"abstract":"A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Formal Scheme of Fault Injection on Coherent Integrated Photonic Neural Networks","authors":"Ye Su;Xiao Jiang;Fang Xu;Yichen Ye;Zhuang Chen;Simi Lu;Weichen Liu;Yiyuan Xie","doi":"10.1109/JSTQE.2024.3493857","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493857","url":null,"abstract":"Based on Mach-Zehnder interferometers (MZIs) coherent integrated photonic neural networks (PNNs) may provide a promising solution for the realization of deep learning with low power consumption, low latency, and ultra-high speed. Adversarial attacks have been widely confirmed to be a serious threat to deep learning. This has led to a large amount of studies in this direction of the electronic domain, including input attacks and inject faults for weights. In this paper, focusing on the phases in the linear operation unit of PNNs, a phase gradient attack (PGA) scheme based on the phase gradient sorting of the MZI-arrays and injecting disturbances along the gradient direction is proposed for the first time. The simulation results indicate that even with weak-intensity PGA, it is almost impossible for PNNs to perform the classification inference. Furthermore, taking into account the effects of fabrication-process variations (FPV) and thermal crosstalk in MZI-arrays that lead to tuning phase deviation in practical application, we systematically analyzed the validity of proposed scheme on the PNNs with phase uncertainties. Specifically, we tested the impact of injecting faults by compressing the number of attacked phase angles to 3, 5, and 7, respectively. The experiment results show that injection attack based using PGA on PNNs trained with Gaussian datasets would reduce classification accuracy to 27.97%, 15.47%, and 8.91% for corresponding cases.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrically Pumped GeSn Micro-Ring Lasers","authors":"Teren Liu;Lukas Seidel;Omar Concepción;Vincent Reboud;Alexei Chelnokov;Giovanni Capellini;Michael Oehme;Detlev Grützmacher;Dan Buca","doi":"10.1109/JSTQE.2024.3489712","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3489712","url":null,"abstract":"Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3470357","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470357","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736572","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3470351","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470351","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736526","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3470355","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470355","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736525","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial The Future of Microresonator Frequency Comb Technologies","authors":"Lute Maleki","doi":"10.1109/JSTQE.2024.3482528","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482528","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10735259","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers","authors":"Subhashree Seth;Kevin J. Reilly;Fatih F. Ince;Akhil Kalapala;Chhabindra Gautam;Thomas J. Rotter;Alexander Neumann;Sadhvikas Addamane;Bradley Thompson;Ricky Gibson;Weidong Zhou;Ganesh Balakrishnan","doi":"10.1109/JSTQE.2024.3486672","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3486672","url":null,"abstract":"Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. The epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers","authors":"Paul Crump;Anisuzzaman Boni;Mohamed Elattar;S. K. Khamari;Igor P. Marko;Stephen J. Sweeney;Seval Arslan;Ben King;Md. Jarez Miah;Dominik Martin;Andrea Knigge;Pietro Della Casa;Günther Tränkle","doi":"10.1109/JSTQE.2024.3484669","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3484669","url":null,"abstract":"Current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900…1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90…100 μm wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 μm stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 °C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. Overall, whilst operating efficiency and power continue to scale rapidly, a technological path for increased specific power and peak efficiency is also emerging.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142587529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}