IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Call for Papers: Special issue on Advances in Semiconductor Surface-emitting Lasers: VCSELs and PCSELs","authors":"","doi":"10.1109/JSTQE.2025.3549283","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549283","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"9800102-9800103"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965828","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers: Special Issue on Advances in High-Speed Intensity Modulation and Direct Detection Technologies","authors":"","doi":"10.1109/JSTQE.2025.3555316","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3555316","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"9800104-9800105"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965863","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Role of Counter Electrode in Perovskite Solar Cell on Silicon Substrate to Enhance Power Conversion Efficiency for CMOS-Compatible Applications","authors":"Eman Sawires;Sameh Abdellatif","doi":"10.1109/JSTQE.2025.3560119","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3560119","url":null,"abstract":"This study investigates the impact of various counter-electrode materials on the overall power conversion efficiency (PCE) of perovskite solar cells (PSCs) fabricated on silicon substrates. We examined four distinct configurations using fluorine-doped tin oxide (FTO) as bare cell, copper (Cu), aluminum (Al), and highly p-doped silicon wafers as counter electrodes. The results indicate that the PSCs with Cu achieved the highest short-circuit current density (<inline-formula><tex-math>${{J}_{SC}}$</tex-math></inline-formula>) of 17.11 mA/cm², while the p-doped silicon and aluminum showed lower <inline-formula><tex-math>${{J}_{SC}}$</tex-math></inline-formula> values of 16.19 mA/cm² and 16.51 mA/cm², respectively. Open-circuit voltage (<inline-formula><tex-math>${{V}_{OC}}$</tex-math></inline-formula>) values remained competitive across all cells, with FTO achieving a <inline-formula><tex-math>${{V}_{OC}}$</tex-math></inline-formula> of 0.98 V. Additionally, the maximum power conversion efficiency (PCE) was highest for Cu at 11.98%, while p-doped silicon achieved a PCE of 11.05%. Notably, the hysteresis index was consistent across all configurations, averaging around 15% to 16%. This comprehensive analysis contributes valuable insights toward developing high-efficiency, CMOS-compatible perovskite solar cells for integration into self-powered lab-on-chip systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 6: Photon. for Climate Chng. Mitigation and Adapt.","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cryogenic High-Speed Vertical-Cavity Surface-Emitting Lasers for Quantum Computing: A Review","authors":"Anjin Liu;Bo Yang;Wanhua Zheng","doi":"10.1109/JSTQE.2025.3558915","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3558915","url":null,"abstract":"Cryogenic computing such as superconducting computing and quantum computing is a promising alternative to handle the bottlenecks of computing power and power efficiency in classical high-performance computing systems. The high-speed energy-efficient data transfer between cryogenic temperature and room temperature for the superconducting quantum computing is a critical issue. The current electrical interconnect is difficult to meet the stringent requirements in the future quantum computing application with millions of qubits. The optical interconnect based on the fiber is a promising solution because the optical fiber data link has a higher modulation bandwidth, ultralow signal loss, and lower heat load. The cryogenic vertical-cavity surface-emitting lasers (VCSELs) with high modulation speed and low power consumption are the potential sources for the cryogenic optical interconnect. This paper reviews the progresses on cryogenic VCSELs, including the properties of semiconductors at cryogenic temperature, structure optimization, and static and dynamic performance.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electro-Thermal Analysis of Dynamically Phase Controlled GST-Based Metasurfaces Enhanced by Graphene's Plasmonic Effect","authors":"Seyed Asad Amirhosseini;Daniyal Khosh Maram","doi":"10.1109/JSTQE.2025.3558713","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3558713","url":null,"abstract":"The study presents a method for dynamically adjusting metasurfaces by manipulating the phase of incident light within the structure. Local heaters constructed from graphene are employed to perform this manipulation. Controlling the bias voltages applied to graphene can regulate the crystallization levels of phase-change materials, thus changing the metasurface's behavior. The plasmonic effect of graphene, which is caused by surface plasmon polaritons, is utilized to increase absorbance rates by adjusting structural parameters. The dynamic range of the proposed metasurface is achieved between <inline-formula><tex-math>$0^circ$</tex-math></inline-formula> and <inline-formula><tex-math>$300^circ$</tex-math></inline-formula> for the phase of reflected waves at <inline-formula><tex-math>$lambda = 1.55$</tex-math></inline-formula> μm wavelength. The simulation has been done by emphasizing the inclusion of Four nonlinear factors that link temperature and electric current, which include the electrical conductivity <inline-formula><tex-math>$sigma (T(t))$</tex-math></inline-formula> of graphene and Ge <inline-formula><tex-math>$_{2}$</tex-math></inline-formula> Sb<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>Te<inline-formula><tex-math>$_{5}$</tex-math></inline-formula> (GST) material, the thermal conductivity <inline-formula><tex-math>$kappa (T(t))$</tex-math></inline-formula>, and the crystallinity percentage <inline-formula><tex-math>$L_{c}(T(t))$</tex-math></inline-formula> of GST material at different temperatures. As temperature distribution throughout the GST material is non-uniform, making it difficult to predict the crystalline percentage uniformly, Two scenarios have been adopted in this work to simulate the crystalline percentage as accurately as possible. Furthermore, we demonstrate the metasurface's efficacy as a beam steering and LiDAR device, emphasizing its enhanced thermal isolation between unit cells and the synergistic integration of graphene's plasmonic effects to achieve superior absorption and reconfigurable functionality.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Calibrating Intelligent OCT-SLO System","authors":"Mayank Goswami","doi":"10.1109/JSTQE.2025.3557860","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3557860","url":null,"abstract":"A unique sample-independent 3D self-calibration methodology is tested on a unique optical coherence tomography and multi-spectral scanning laser ophthalmoscope (OCT-SLO) hybrid system. Operators’ visual cognition is replaced by computer vision using the proposed novel fully automatic AI-driven system design. Sample-specific automatic contrast adjustment/focusing of the beam is achieved on the pre-instructed region of interest. The AI model dedicates infrared, fluorescence, and visual spectrum optical alignment by quantitatively estimating pre-instructed features. The tested approach, however, is flexible enough to utilize any apt AI model. Relative comparison with classical signal-to-noise-driven automation is shown to be ∼200% inferior and ∼130% slower than the AI-driven approach. The best spatial resolution of the system is found to be: (a) 2.41 microns in glass bead eye phantom, 0.76 <inline-formula><tex-math>$ pm $</tex-math></inline-formula> 0.46 microns in the mouse retina in the axial direction, and (b) better than 228-line pair per millimeter (lp/mm) or 2 microns for all three spectrums, i.e., 488 nm, 840 nm, and 520–550 nm emission in coronal/frontal/x-y plane. Intelligent automation reduces the possibility of developing cold cataracts (especially in mouse imaging) and patient-associated discomfort due to delay during manual alignment by facilitating easy handling for swift ocular imaging and better accuracy. The automatic novel tabletop compact system provides <italic>true</i> functional 3D images in three different spectrums for dynamic sample profiles. This is especially useful for photodynamic imaging treatment.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-14"},"PeriodicalIF":4.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and Improvement of Single-Layer MoS2/Multilayer MoS2 Field Effect Transistor Photodetectors","authors":"Haipeng Wang;Wei Zhang;Xule Wang;Haihua Huang;Jing Qiu;Jieping Luo;Shijie Deng;Haizhi Song","doi":"10.1109/JSTQE.2025.3557583","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3557583","url":null,"abstract":"The single-layer MoS₂ and multilayer MoS₂ field-effect transistor photodetector models were simulated and analyzed by ATLAS device simulator of Silvaco. The spectral response, responsivity and transfer characteristics of the two field-effect transistor photodetector models were analyzed, respectively. We show that the photocurrent generated by a single-layer MoS₂ phototransistor depends solely on the illumination optical power at constant drain or gate voltage. And it shows good stability and photoresponse characteristics. In contrast, the modeled multilayer MoS₂ phototransistor exhibits better photovoltaic performance than the single-layer MoS₂ phototransistor, including wider spectral response and higher responsivity. These simulation results are basically consistent with the previous experimental data. These works are of great significance for the design and development of transition metal dichalcogenide-based advanced photodetectors.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezoplasmonic System for Enhanced Photonic Spin Hall Effect for Applications in Optical Refractive Index Sensing","authors":"Vinit Kumar;Jitendra Bahadur Maurya;Yogendra Kumar Prajapati","doi":"10.1109/JSTQE.2025.3556890","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3556890","url":null,"abstract":"The interplay of intense spin-orbit interactions (SOIs) with plasmonic and piezoelectric surfaces offers a promising solution for precise control over polarization states and wavefront shaping. Reconfigurable beam manipulation, driven by variable voltage and SOIs, has emerged as a key focus in advancing optical systems. Despite this potential, the mechanical rigidity of piezoelectric materials and their inherently static optical properties post-fabrication present significant challenges, restricting their adaptability and dynamic functionality. This study explores the integration of plasmonic and piezoelectric materials to overcome these limitations, enabling voltage-controlled modulation of refractive index and thickness for tunable SOIs. In this manuscript, the photonic spin Hall effect (PSHE), arising from the SOI of light, is demonstrated in a layered structure consisting of silver (Ag), the piezoelectric material PMN-PT, and an additional Ag layer. By applying a voltage bias (<italic>V_B</i>) of –5.874 V, left-hand circular polarization achieves a maximum conventional spin dependent shift (CSDS) of 143.357 μm for a PMN-PT layer thickness of 387 nm, outperforming previously reported PSHE studies. Further, the proposed PSHE framework demonstrates potential for antigen or complementary DNA detection, owing to the exceptional tunability of PMN-PT. A spin-dependent sensitivity of 610430.50 μm/RIU is achieved at a refractive index change of Δn = 1 × 10^-3 under a voltage bias of –5.874 V for complementary DNA sensing. Furthermore, the proposed sensor design (str-3) exhibits an extraordinary limit of detection (<inline-formula><tex-math>${bm{Lo}}{{{bm{D}}}_{{bm{sd}}}}$</tex-math></inline-formula>) of 1.638 × 10^-9 degree. RIU/μm, marking a significant advancement in precision optical sensing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial: Advancing Semiconductor Lasers: Scaling Power and Efficiency for Next-Generation Sensing Applications","authors":"Amirhossein Ghods","doi":"10.1109/JSTQE.2025.3549483","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549483","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-4"},"PeriodicalIF":4.3,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10944525","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Continuous-Variable Source-Independent Quantum Random Number Generator With Phase-Insensitive Detection","authors":"Hongyi Zhou","doi":"10.1109/JSTQE.2025.3552899","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3552899","url":null,"abstract":"Quantum random number generators (QRNGs) harness quantum mechanical unpredictability to produce true randomness, which is crucial for cryptography and secure communications. Among various QRNGs, source-independent QRNGs (SI-QRNGs) relax the trust on the quantum source, allowing for flexible use of advanced detectors to achieve high randomness generation rates. Continuous-variable (CV) SI-QRNGs, in particular, hold promise for practical deployment due to their simplicity and randomness generation rates comparable to trusted-device QRNGs. In this work, we propose a novel CV-SI-QRNG scheme based on phase-insensitive detections, and provide security proof based on semi-definite programming (SDP). We introduce a dimension reduction technique, which rigorously reduces an infinite-dimensional SDP problem to a finite-dimensional one, enabling efficient computation while maintaining valid randomness lower bound. We further validate our method through simulations. These results demonstrate the feasibility of our framework, paving the way for practical and simple SI-QRNG implementations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143792878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}