IEEE Journal of Selected Topics in Quantum Electronics最新文献_第2页

High Detection Rate Self-Powered Ultraviolet Photodetector Based on the Mixed-Dimensional BP/n-GaN Heterojunction 基于混维BP/n-GaN异质结的高检出率自供电紫外探测器

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-03-11 DOI: 10.1109/JSTQE.2026.3672974

Jiahui Wang;Shufang Ma;Shuai Zhang;Liping Ding;Qiheng Ma;Yanren Tang;Hongbin Zhai;Xiaodong Hao;Bin Han;Bingshe Xu

{"title":"High Detection Rate Self-Powered Ultraviolet Photodetector Based on the Mixed-Dimensional BP/n-GaN Heterojunction","authors":"Jiahui Wang;Shufang Ma;Shuai Zhang;Liping Ding;Qiheng Ma;Yanren Tang;Hongbin Zhai;Xiaodong Hao;Bin Han;Bingshe Xu","doi":"10.1109/JSTQE.2026.3672974","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3672974","url":null,"abstract":"In recent years, mixed-dimensional p-n heterojunctions have exhibited promising optoelectronic properties. With the advancement of optoelectronic devices, unbiased (self-powered) photodetectors can better meet the requirements of specific scenarios. However, under zero-bias operation, the photocurrent is typically small, resulting in limited detectivity. To address this issue, this paper constructed a BP/n-GaN heterojunction photodetector through mechanical exfoliation, successfully increasing the performance of the GaN photodetector by 4-6 orders of magnitude. First, black phosphorus (BP) was synthesized via chemical vapor transport (CVT) and subsequently transferred onto an /n-GaN film to construct a BP/n-GaN heterojunction. Then, the I-V characteristics, light response and other key performances of the self-powered ultraviolet photoelectric detector based on the BP/n-GaN heterostructure were investigated. It was found that under no external bias and 365 nm illumination, the heterostructure device exhibits good rectification behavior, with a responsivity of 0.023 A/W and a detectivity is 2.9 × 1011 Jones. Compared to the GaN photoelectric detector fabricated in this paper, the performance of the heterostructure device has improved by 4 orders of magnitude in terms of detection rate and response rate. Moreover, the UPS, ultraviolet-visible absorption spectroscopy tests and theoretical calculations determined the type II band alignment of the BP/n-GaN heterojunction, which can effectively separate photogenerated carriers. This study indicates that this BP/n-GaN heterojunction photodetector leverages the high carrier mobility of black phosphorus to enhance carrier transport and collection under zero bias, providing an emerging low-power UV photodetection platform relevant to nanophotonics-oriented UV sensing and communication.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147696181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gapped Silicon Dimer Metasurface for High-Sensitivity Dual-Mode Terahertz Chiral Sensing 用于高灵敏度双模太赫兹手性传感的间隙硅二聚体超表面

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-03-09 DOI: 10.1109/JSTQE.2026.3671593

Qing Liu;Jingxing Zhong;Yixuan Chai;Longfang Ye

{"title":"Gapped Silicon Dimer Metasurface for High-Sensitivity Dual-Mode Terahertz Chiral Sensing","authors":"Qing Liu;Jingxing Zhong;Yixuan Chai;Longfang Ye","doi":"10.1109/JSTQE.2026.3671593","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3671593","url":null,"abstract":"Terahertz sensing is emerging as a powerful tool in various domains like analytical chemistry and biomedicine, attracting increasing attention due to its unique properties and growing range of applications. Chirality is a geometric property that refers to an object’s asymmetry and inability to be superimposed with its mirror image. The weak nature of chirality in molecules typically requires long light paths and high concentrations for detection. Metasurfaces can produce highly localized chiral fields, enhancing light-molecule interactions near their surfaces. This study demonstrates a dielectric metasurface based on symmetrically gapped silicon dimers for terahertz chiral sensing, which avoids introducing background chiral signals. The metasurface supports accessible superchiral hotspots in the dimer gap under both circularly and linearly polarized terahertz excitations. The bare metasurface achieves a volume-average terahertz circular dichroism (TCD) <italic>CE_av of 190 under circularly polarized light (CPL) and 200 under linearly polarized light (LPL). Notably, when a 5-μm-thick chiral biolayer is applied to the metasurface, a volume-averaged <italic>CE_av_bio of 85 (CPL) and 105 (LPL) is achieved. These findings are significant for advancing TCD spectroscopy in the terahertz range.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Simultaneous Beam Steering and Compressing Device Based on Subwavelength Protrusion Metallic Tunnels 基于亚波长金属隧道的宽带同步光束导向压缩装置

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-03-06 DOI: 10.1109/JSTQE.2026.3671324

Dongguo Zhang;Fei Sun;Qin Liao;Yichao Liu;Donguk Nam

{"title":"Broadband Simultaneous Beam Steering and Compressing Device Based on Subwavelength Protrusion Metallic Tunnels","authors":"Dongguo Zhang;Fei Sun;Qin Liao;Yichao Liu;Donguk Nam","doi":"10.1109/JSTQE.2026.3671324","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3671324","url":null,"abstract":"Beam steering and beamwidth compressing play a role in steering the beam and narrowing its half-power beamwidth, respectively, which are both widely applied in extending the effective operational range of 6G communications, IoT devices, and antenna systems. However, research on wave manipulation devices capable of simultaneously achieving both functionalities remains limited, despite their great potential for system miniaturization and functional integration. In this study, we design and realize a broadband device capable of simultaneously steering and compressing the TM-polarized EM waves using subwavelength protrusion metallic tunnels. The underlying physical mechanisms are quantitatively explained through wave optics and optical surface transformation, indicating the size ratio between the incident and output surface governs both the steering angle and the compression ratio. Numerical simulations demonstrate that under a steering angle of 40° and a compression ratio of 0.4, the averaged energy transmittance across 3-12 GHz is above 0.8. The experiments further validate its effectiveness by measuring the magnetic field distributions of the output beam at various frequencies. The excellent beam steering and compressing effects make the proposed device highly promising for next-generation multifunctional wave manipulation in advanced communication systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147558088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast Laser-Fabricated Three-Dimensional Photonic Chips Empowering Diverse Applications 超快激光制造三维光子芯片支持多种应用

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-03-02 DOI: 10.1109/JSTQE.2026.3669125

Jian Wang;Jue Wang;Chengkun Cai;Kangrui Wang;Shiao Ding

{"title":"Ultrafast Laser-Fabricated Three-Dimensional Photonic Chips Empowering Diverse Applications","authors":"Jian Wang;Jue Wang;Chengkun Cai;Kangrui Wang;Shiao Ding","doi":"10.1109/JSTQE.2026.3669125","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3669125","url":null,"abstract":"Three-dimensional (3D) photonic integration is becoming a key enabler for future optical technologies, driven by the need for greater functionality, higher compactness, and superior interconnect density. In response to these demands, ultrafast laser processing has emerged as a powerful technique for realizing 3D photonic chips with enhanced design and fabrication flexibility—while avoiding the complexity of mask-based or cleanroom-dependent fabrication. This review begins by outlining the fundamental mechanisms of femtosecond laser–matter interactions, which enable precise energy deposition and spatially confined material modification. It then delineates three primary processing routes—direct modification, additive processing, and subtractive processing—alongside essential beam-shaping strategies. The compatibility of various material systems and structural platforms, including glasses, polymers, crystals, bulk substrates, thin-film layers, and optical fibers, is further discussed. Subsequently, the review details how these 3D laser-fabricated photonic structures underpin a wide range of applications, such as optical field manipulation, optical communications, optical interconnects, optical computing and processing, optical data storage, quantum information, nonlinear optics, optical trapping, and imaging. Finally, it concludes with a perspective on the prevailing challenges and future trends toward scalable, multifunctional, and hybrid-integrated photonic systems enabled by ultrafast laser microfabrication.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-26"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D Electronic-Photonic Heterogeneous Interconnect Platforms Enabling Energy-Efficient Scalable Architectures for Future HPC Systems 3D电子-光子异构互连平台为未来的高性能计算系统实现节能可扩展架构

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-03-13 DOI: 10.1109/JSTQE.2026.3674145

Anirban Samanta;Shun-Hung Lee;Chun-Yi Cheng;Samuel Palermo;S. J. Ben Yoo

{"title":"3D Electronic-Photonic Heterogeneous Interconnect Platforms Enabling Energy-Efficient Scalable Architectures for Future HPC Systems","authors":"Anirban Samanta;Shun-Hung Lee;Chun-Yi Cheng;Samuel Palermo;S. J. Ben Yoo","doi":"10.1109/JSTQE.2026.3674145","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3674145","url":null,"abstract":"3D interconnects have emerged as a solution to address the scaling issues of interconnect bandwidth and the memory wall problem in high-performance computing (HPC), such as High-Bandwidth Memory (HBM). However, the copper-based electrical interconnect retains fundamental limitations. Dense I/O for high-speed signals lead to degraded signal quality for end-to-end links, necessitating additional circuits to mitigate signal impairments and resulting in poor energy efficiency. We propose a 3D chiplet stacking electronic-photonic interconnect (EPIC) platform, which offers a solution by moving the high-speed data communication interface to the optical domain across the 3D stack by using Through Silicon Optical Vias (TSOV), while retaining the functionality of electrical TSVs and 2.5D interconnects for power delivery and short-reach low-latency communications. We then benchmark the proposed model against state-of-the-art 3D electrical interconnects to demonstrate our 3D EPIC platform beating the 3D electrical interconnects to >10 TB/s/mm2 bandwidth density. We present a pathway to extend our demonstrated, industry-ready design to achieving <inline-formula><tex-math>$leq$</tex-math></inline-formula>100 fJ/bit high-speed communication.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-14"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11434907","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147606196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rainbow Trapping on Plasmonic Surface Gratings and Beyond 等离子体表面光栅上的彩虹俘获及其他

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-03-01 Epub Date: 2026-02-12 DOI: 10.1109/JSTQE.2026.3664350

Jietao Liu;P.V. Karthik Yadav;Murali Gedda;Qiaoqiang Gan

{"title":"Rainbow Trapping on Plasmonic Surface Gratings and Beyond","authors":"Jietao Liu;P.V. Karthik Yadav;Murali Gedda;Qiaoqiang Gan","doi":"10.1109/JSTQE.2026.3664350","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3664350","url":null,"abstract":"On-chip rainbow trapping enables precise light manipulation for slow light, photonics trapping, absorption, and sensing in advanced photonic devices. Although metallic graded grating nanostructures facilitate efficient rainbow trapping, broadband plasmonic trapping remains challenging. Over the past decades, metamaterials, microstructures, and nanostructures have been extensively studied and surface-trapped rainbows have been incorporated in novel applications. This review examines the key achievements, challenges, and practical applications of rainbow trapping, focusing on broadband light control through plasmonic surface gratings. We discuss the fundamental mechanisms of rainbow trapping through simulations and experimental demonstrations across various geometries, especially those of graded gratings. In addition, we explore advanced fabrication techniques and emerging applications of rainbow trapping in optical sensing, communication, and light absorption, highlighting new possibilities for multi-spectrum and broadband light manipulation. Finally, we highlight the challenges and future perspectives of this emerging technology.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-13"},"PeriodicalIF":5.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147557419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser-Induced Dewetting of Gold Thin Films on Optically Engineered Substrates 光学工程衬底上金薄膜的激光诱导脱湿

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-23 DOI: 10.1109/JSTQE.2026.3665139

Elias A. Anwar;Vanessa N. Peters;Thejaswi U. Tumkur;Mikhail A. Noginov

引用次数: 0

Hybrid InGaAsP/SiC Fabry-Perot Laser on Low Thermal Impedance SiC Substrate via Adhesive Wafer Bonding Technique 低热阻SiC衬底上的InGaAsP/SiC法布里-珀罗混合激光器

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-18 DOI: 10.1109/JSTQE.2026.3666229

Wei-Cheng Feng;Yang-Jeng Chen;Chung-Wei Hsiao;Bo-Hong Chen;Jing-Ya Chiu;Lu-Kuan Du;Zong-Ting Wang;Chih-Min Liao;Yi-Jen Chiu

{"title":"Hybrid InGaAsP/SiC Fabry-Perot Laser on Low Thermal Impedance SiC Substrate via Adhesive Wafer Bonding Technique","authors":"Wei-Cheng Feng;Yang-Jeng Chen;Chung-Wei Hsiao;Bo-Hong Chen;Jing-Ya Chiu;Lu-Kuan Du;Zong-Ting Wang;Chih-Min Liao;Yi-Jen Chiu","doi":"10.1109/JSTQE.2026.3666229","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3666229","url":null,"abstract":"Herein, a new approach of semiconductor laser is developed by integrating a vertical 1500-nm ridge-type InGaAsP P-i-N heterojunction Fabry–Pérot laser structure onto a SiC substrate via BCB adhesive wafer bonding technique. By taking advantage of a high thermal conductivity SiC substrate and thin <50 nm BCB, the whole laser structure with a low thermal impedance (TI) of 19.7 K/W was observed by measuring the wavelength shift, overall dissipated power, and substrate temperature, which could thus yield a high continuous wave output power of 30.4 mW. The laser exhibited a higher optical power level and a lower threshold current density than two other lasers with the same active regions but with InP and silicon-on-insulator (SOI) substrates, confirming that the low TI of the SiC substrate contributed to the laser performance enhancement. By simulating TI in structures with different substrate, it shows that the high thermal conductivity in SiC substrate with thin BCB can still be beneficial to the overall TI. The luminescent peak wavelength of the laser with the SiC substrate exhibited a strong blue-shift phenomenon, even at current densities above the threshold current density, indicating that the low TI of the substrate considerably reduced laser self-heating caused by current injection. A III–V material heterogeneously integrated into a SiC substrate scheme using the wafer bonding technique could have wide applications in high-performance, low-cost, process-facilitated photonic integrated circuits.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-9"},"PeriodicalIF":5.1,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Analysis of Bioassays Based on Microlaser Ensembles 基于微激光系统的生物检测理论分析

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-17 DOI: 10.1109/JSTQE.2026.3665681

Weishu Wu;Xudong Fan

{"title":"Theoretical Analysis of Bioassays Based on Microlaser Ensembles","authors":"Weishu Wu;Xudong Fan","doi":"10.1109/JSTQE.2026.3665681","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3665681","url":null,"abstract":"We present a bioassay platform based on microlaser ensembles, offering a sensitive assay method with a high dynamic range. In this platform, microlasers are functionalized to capture analytes. The captured analytes introduce quenchers, thus increasing microlasers’ lasing thresholds and even turning off microlaser emission. We develop a theoretical model to count the number of quenchers and hence the number of captured analytes for microlasers by measuring their lasing thresholds. A statistical model is established to link the distribution of captured analytes to the lasing fraction of microlasers. Fundamentally different from digital ELISA, in which a microunit (such as a microbead) saturates when more than one analyte is present, the microlaser-based method can perform multiple quantized signal readouts by scanning the external pump across the lasing threshold. Therefore, this platform does not require the average number of analytes per microlaser be much lower than one, thus achieving a higher dynamic range. The detection limit and the factors that may affect the detection limit are also discussed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 4: Adv. Biophoton. in Emerg. Biomed. Tech. and Dev","pages":"1-10"},"PeriodicalIF":5.1,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Micro-Transfer Printing of SiGe BiCMOS Electronic Chiplets on Silicon 硅上SiGe BiCMOS电子小片的微转移印刷

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-13 DOI: 10.1109/JSTQE.2026.3664420

He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens

{"title":"Micro-Transfer Printing of SiGe BiCMOS Electronic Chiplets on Silicon","authors":"He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens","doi":"10.1109/JSTQE.2026.3664420","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3664420","url":null,"abstract":"We demonstrate micro-transfer printing (<inline-formula><tex-math>$mu$</tex-math></inline-formula>TP) and post-printing metallization of thin electronic chiplets on silicon, with a view to heterogeneously integrate electronic integrated circuits (EICs) with photonic integrated circuits (PICs). <inline-formula><tex-math>$mu$</tex-math></inline-formula>TP decouples the fabrication of EICs and PICs, and simultaneously enables their tight integration with high-throughput, small form-factor and on wafer-scale. In this study, we successfully established the process flow for releasing and printing 300 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m × 200 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m SiGe BiCMOS electronic driver chiplets and electrically connecting these chiplets using a polymer ramp to overcome the 20-<inline-formula><tex-math>$mu$</tex-math></inline-formula> m chiplet thickness, providing a gain of 14 dB and bandwidth of over 35 GHz with low-parasitic interconnections. The proposed methodology provides a practical and mass-producible solution to realize the stacking of EICs on silicon photonic wafers for emerging applications such as co-packaged optics (CPO).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0