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Nanostructured Semiconductor Lasers 纳米结构半导体激光器
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-21 DOI: 10.1109/JSTQE.2024.3483900
Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu
{"title":"Nanostructured Semiconductor Lasers","authors":"Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu","doi":"10.1109/JSTQE.2024.3483900","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3483900","url":null,"abstract":"Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-17"},"PeriodicalIF":4.3,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723791","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection 开发用于红外探测的硅基单片锗锡雪崩光电二极管
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3482257
Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu
{"title":"Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection","authors":"Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu","doi":"10.1109/JSTQE.2024.3482257","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482257","url":null,"abstract":"We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Advances in Photonic Crystal Surface Emitting Lasers 光子晶体表面发射激光器的最新进展
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-16 DOI: 10.1109/JSTQE.2024.3481451
Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou
{"title":"Recent Advances in Photonic Crystal Surface Emitting Lasers","authors":"Mingsen Pan;Chhabindra Gautam;Yudong Chen;Thomas Rotter;Ganesh Balakrishnan;Weidong Zhou","doi":"10.1109/JSTQE.2024.3481451","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3481451","url":null,"abstract":"In recent decades, photonic crystal surface-emitting lasers (PCSELs), a novel design of semiconductor light sources, have shown huge performance improvement. Based on compact semiconductor heterostructures, PCSELs have not only achieved near diffraction limit beam divergence but have also realized single-mode lasing from a broad emission area. Thanks to its planar cavity design, PCSEL cavities can integrate confinement structures laterally, which can potentially achieve performances otherwise unachievable in the current semiconductor lasers. This paper reviews recent advances in PCSELs, including the high-power PCSELs, laterally confined PCSEL design, PCSEL cavity size scaling for high speed, narrow laser linewidth, and coherent PCSEL arrays.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aging Mechanisms of Broad Area ∼800 nm Laser Diodes 宽域 ∼800 nm 激光二极管的老化机制
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3466169
Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty
{"title":"Aging Mechanisms of Broad Area ∼800 nm Laser Diodes","authors":"Elaine D. McVay;Robert J. Deri;Salmaan H. Baxamusa;William E. Fenwick;Jiang Li;Joel B. Varley;Daniel E. Mittelberger;Luyang Wang;Kevin P. Pipe;Matthew C. Boisselle;Laina V. Gilmore;Rebecca B. Swertfeger;Mark T. Crowley;Prabhu Thiagarajan;Jiyon Song;Gerald T. Thaler;Christopher F. Schuck;Adam Dusty","doi":"10.1109/JSTQE.2024.3466169","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3466169","url":null,"abstract":"This work presents a comprehensive study of early aging behavior (<500>15</sup>\u0000 cm\u0000<sup>−3</sup>\u0000 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 10\u0000<sup>15</sup>\u0000 cm\u0000<sup>−3</sup>\u0000 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Enhancement Reservoir Computing System Based on Combination of VCESL Optical Feedback and Mutual Injection Structure 基于 VCESL 光反馈和互注结构组合的性能增强型水库计算系统
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-14 DOI: 10.1109/JSTQE.2024.3480455
Pengjin Zhu;Hongxiang Wang;Yuefeng Ji
{"title":"Performance Enhancement Reservoir Computing System Based on Combination of VCESL Optical Feedback and Mutual Injection Structure","authors":"Pengjin Zhu;Hongxiang Wang;Yuefeng Ji","doi":"10.1109/JSTQE.2024.3480455","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3480455","url":null,"abstract":"In this paper, a novel performance enhancement reservoir computing (RC) system based on the combination of vertical-cavity surface emitting laser (VCSEL) optical feedback and mutual injection (OFAI) structure is proposed and demonstrated numerically. By simultaneously introducing optical feedback and mutual injection structures into the proposed RC system, the nonlinear and high-dimensional mapping capabilities are significantly improved. The proposed system exhibits the best performance in both single task processing mode and parallel processing mode compared to the other 4 RC systems. Specifically, the minimum NMSE of Santa-Fe time series prediction, waveform classification and NARMA-10 task are 0.0011, 1.058\u0000<inline-formula><tex-math>$times 10^{-8}$</tex-math></inline-formula>\u0000 and 0.101 respectively. Furthermore, since two linear polarization modes coexist in VCSELs, the parallel-polarized and orthogonal-polarized configuration is considered. Numerical results show that in all benchmark tasks, the performance of the orthogonal-polarized configuration is generally better than the parallel-polarized configuration in single task processing mode, and the conclusion is opposite in parallel processing mode, which is related to the coupling mechanism between the two polarization modes. Finally, the effect of different parameters on the system performance is explored in detail. In summary, the proposed system is interesting and valuable in the field of high-speed and low-power neuromorphic photonics.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research Progress of GeSn Photodetectors for Infrared Application 红外应用 GeSn 光电探测器的研究进展
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-08 DOI: 10.1109/JSTQE.2024.3476178
Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng
{"title":"Research Progress of GeSn Photodetectors for Infrared Application","authors":"Jun Zheng;Xiangquan Liu;Jinlai Cui;Qinxin Huang;Zhi Liu;Yuhua Zuo;Buwen Cheng","doi":"10.1109/JSTQE.2024.3476178","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3476178","url":null,"abstract":"Silicon platform is the foundation of the modern information industry. Silicon-based semiconductor materials are compatible with the complementary metal-oxide semiconductor (CMOS) process of silicon, which can extend the application of silicon from electronic integrated circuit chips to optoelectronic integrated circuit chips. Germanium tin (GeSn), as a silicon-based narrow bandgap material, has received widespread attention in the past decade, which can provide new functions for silicon optoelectronic integrated circuit chips. By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared. Here, we focus on the latest developments in GeSn detectors, for infrared detection, imaging and high-speed detectors. In addition to review the state of the art work, we also propose some research directions for infrared applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Down-Scaling of GaN-Based Laser Diodes for High-Speed Modulation Characteristics 缩小氮化镓基激光二极管的规模以实现高速调制特性
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-04 DOI: 10.1109/JSTQE.2024.3474797
Leihao Sun;Junfei Wang;Chaowen Guan;Songke Fang;Zengxin Li;Junhui Hu;Yue Wang;Boon S. Ooi;Jianyang Shi;Ziwei Li;Junwen Zhang;Nan Chi;Chao Shen
{"title":"Down-Scaling of GaN-Based Laser Diodes for High-Speed Modulation Characteristics","authors":"Leihao Sun;Junfei Wang;Chaowen Guan;Songke Fang;Zengxin Li;Junhui Hu;Yue Wang;Boon S. Ooi;Jianyang Shi;Ziwei Li;Junwen Zhang;Nan Chi;Chao Shen","doi":"10.1109/JSTQE.2024.3474797","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3474797","url":null,"abstract":"Recently, the surging need for greater bandwidth in the post-5G and 6G eras has prompted scientists to research visible light communications (VLC). VLC not only addresses the foreseeable limited radio frequency (RF) spectrum resources but also serves as a reliable solution for underwater wireless optical communication (UWOC). For high-speed VLC systems, GaN-based laser diodes have shown excellent potential over LEDs as emitting components. Downscaling laser diodes is considered an effective approach for high modulation bandwidth LDs, which has yet to be well studied in III-nitride material systems. In this work, we studied the key device design parameters, including cavity length, quantum well thickness, ridge waveguide width, and PN-junction distance. We analyzed the internal parameters of such high-speed InGaN/GaN double quantum well LDs and experimentally investigated their impact on the modulation bandwidth of LDs. As a result, a modulation bandwidth of 4.47 GHz (−3 dB) has been achieved. Our work provides valuable guidance for subsequent high-speed laser designs, paving the path for energy-efficient VLC systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers AlInGaAs 二极管激光器在高电流密度下的斜率效率和电压降低率
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-10-02 DOI: 10.1109/JSTQE.2024.3472458
Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler
{"title":"Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers","authors":"Robert J. Deri;William E. Fenwick;Jiang Li;David L. Pope;Matthew C. Boisselle;David M. Dutra;Logan Martin;Mark T. Crowley;Prabhu Thiagarajan;Gerald T. Thaler","doi":"10.1109/JSTQE.2024.3472458","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3472458","url":null,"abstract":"The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser 基于氮化镓的谐振腔发光二极管走向垂直腔表面发射激光器
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-27 DOI: 10.1109/JSTQE.2024.3469978
Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang
{"title":"GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser","authors":"Chuanjie Li;Meixin Feng;Jiaqi Liu;Wei Liu;Xiujian Sun;Jianxun Liu;Zhiwei Sun;Gangyi Zhu;Shuming Zhang;Qian Sun;Hui Yang","doi":"10.1109/JSTQE.2024.3469978","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3469978","url":null,"abstract":"The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n\u0000<sup>++</sup>\u0000-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142452681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarized Frequency Combs in a Mode-Locked VECSEL 模式锁定 VECSEL 中的偏振频梳
IF 4.3 2区 工程技术
IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-09-27 DOI: 10.1109/JSTQE.2024.3470227
Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi
{"title":"Polarized Frequency Combs in a Mode-Locked VECSEL","authors":"Krassimir Panajotov;Andrei G. Vladimirov;Mustapha Tlidi","doi":"10.1109/JSTQE.2024.3470227","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470227","url":null,"abstract":"We present a detailed and rigorous derivation of the delay differential equations of the spin-flip model for vertical external cavity lasers with a semiconductor saturable absorption mirror. This model describes mode-locked semiconductor lasers in the ring-resonator geometry with unidirectional lasing. This contribution completes a previous communication [Vladimirov et al. \u0000<italic>Opt. Lett.</i>\u0000, 45, 252 (2020)]. Furthermore, we present a comprehensive analytical derivation that considers phase and amplitude anisotropies, as well as the different delay times for orthogonal linear polarizations. Our findings demonstrate the coexistence of two linearly polarized frequency combs generation with slightly different repetition rates, which can be attributed to the birefringence-induced time-of-flight difference.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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