IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Electrically Pumped GeSn Micro-Ring Lasers","authors":"Teren Liu;Lukas Seidel;Omar Concepción;Vincent Reboud;Alexei Chelnokov;Giovanni Capellini;Michael Oehme;Detlev Grützmacher;Dan Buca","doi":"10.1109/JSTQE.2024.3489712","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3489712","url":null,"abstract":"Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2024.3470357","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470357","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736572","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2024.3470351","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470351","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736526","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2024.3470355","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3470355","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736525","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial The Future of Microresonator Frequency Comb Technologies","authors":"Lute Maleki","doi":"10.1109/JSTQE.2024.3482528","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482528","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10735259","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers","authors":"Subhashree Seth;Kevin J. Reilly;Fatih F. Ince;Akhil Kalapala;Chhabindra Gautam;Thomas J. Rotter;Alexander Neumann;Sadhvikas Addamane;Bradley Thompson;Ricky Gibson;Weidong Zhou;Ganesh Balakrishnan","doi":"10.1109/JSTQE.2024.3486672","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3486672","url":null,"abstract":"Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. The epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-Dependent Dielectric Response, Index of Refraction, and Absorption Coefficient of GeSn Films up to 8.4% Sn","authors":"Amanda N. Lemire;Kevin A. Grossklaus;Thomas E. Vandervelde","doi":"10.1109/JSTQE.2024.3486025","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3486025","url":null,"abstract":"Three Ge\u0000_(1-x)\u0000Sn\u0000_x\u0000 films were measured by spectroscopic ellipsometry to extract their optical properties. The Sn contents of the films were 3.6%, 6.5%, and 8.4%, and all were fully strained to a Ge (001) substrate. Optical constants were collected from 0.39–4.116 eV, at temperatures between 78 K and 475 K. Critical point energies in the band structure were red-shifted with increasing Sn content and increasing temperatures. An extra critical point appears between E\u0000₀\u0000+Δ and E\u0000₁\u0000 transitions in GeSn samples that does not appear in Ge.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-5"},"PeriodicalIF":4.3,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers","authors":"Paul Crump;Anisuzzaman Boni;Mohamed Elattar;S. K. Khamari;Igor P. Marko;Stephen J. Sweeney;Seval Arslan;Ben King;Md. Jarez Miah;Dominik Martin;Andrea Knigge;Pietro Della Casa;Günther Tränkle","doi":"10.1109/JSTQE.2024.3484669","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3484669","url":null,"abstract":"Current progress in the scaling of continuous wave optical output power and conversion efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in the 900…1000 nm wavelength range is presented. Device research and engineering efforts have ensured that BALs remain the most efficient of all light sources, so that in the past 10 years, power conversion efficiency at 20 W continuous wave (CW) output power from BA lasers with a 90…100 μm wide stripe has increased 1.5-fold to 57% (via epitaxial layer design developments), whilst peak CW power per single emitter has increased around 3-fold to 70 W (via scaling of device size), with further scaling underway, for example via use of multi-junction designs. However, the peak achievable CW power conversion efficiency and CW specific output power (defined here as peak output power from a 100 μm stripe diode lasers with a single p-n junction) has changed remarkably little, remaining around 70% and 25 W, respectively, for the past decade. Fortunately, research to understand the limits to peak efficiency and specific output power has also shown progress. Specifically, recent studies indicate that spatial non-uniformity in optical field and temperature play a major role in limiting both power and conversion efficiency. Technological efforts motivated by these discoveries to flatten lateral and longitudinal temperature profiles have successfully increased both power and efficiency. In addition, epitaxial layer designs with very high modal gain successfully reduce threshold current and increase slope at 25 °C to values comparable to those observed at 200 K, offering a path toward the 80% conversion efficiency range currently seen only at these cryogenic temperatures. Overall, whilst operating efficiency and power continue to scale rapidly, a technological path for increased specific power and peak efficiency is also emerging.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142587529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanostructured Semiconductor Lasers","authors":"Jesper Mørk;Meng Xiong;Kristian Seegert;Mathias Marchal;Gaoneng Dong;Evangelos Dimopoulos;Elizaveta Semenova;Kresten Yvind;Yi Yu","doi":"10.1109/JSTQE.2024.3483900","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3483900","url":null,"abstract":"Developments in semiconductor nanotechnology have allowed the experimental realization of a new generation of semiconductor lasers with cavity sizes on the scale of the optical wavelength or smaller. Such semiconductor nanolasers present new opportunities in information technology with extremely low energy consumption, e.g. for on-chip optical communications. As the characteristic dimensions of the laser shrink to the nanoscale, assumptions that hold well for macroscopic semiconductor lasers must be revisited. The paper presents recent progress on semiconductor nanolasers, specifically emphasizing three topics: photonic crystal nanolasers with ultra-low threshold, semiconductor lasers with deep subwavelength light confinement, and semiconductor Fano lasers.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-17"},"PeriodicalIF":4.3,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723791","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection","authors":"Justin Rudie;Sylvester Amoah;Xiaoxin Wang;Rajesh Kumar;Grey Abernathy;Steven Akwabli;Perry C. Grant;Jifeng Liu;Baohua Li;Wei Du;Shui-Qing Yu","doi":"10.1109/JSTQE.2024.3482257","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3482257","url":null,"abstract":"We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}