IEEE Journal of Selected Topics in Quantum Electronics最新文献_第7页

Laser-Induced Dewetting of Gold Thin Films on Optically Engineered Substrates 光学工程衬底上金薄膜的激光诱导脱湿

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-23 DOI: 10.1109/JSTQE.2026.3665139

Elias A. Anwar;Vanessa N. Peters;Thejaswi U. Tumkur;Mikhail A. Noginov

引用次数: 0

Hybrid InGaAsP/SiC Fabry-Perot Laser on Low Thermal Impedance SiC Substrate via Adhesive Wafer Bonding Technique 低热阻SiC衬底上的InGaAsP/SiC法布里-珀罗混合激光器

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-18 DOI: 10.1109/JSTQE.2026.3666229

Wei-Cheng Feng;Yang-Jeng Chen;Chung-Wei Hsiao;Bo-Hong Chen;Jing-Ya Chiu;Lu-Kuan Du;Zong-Ting Wang;Chih-Min Liao;Yi-Jen Chiu

{"title":"Hybrid InGaAsP/SiC Fabry-Perot Laser on Low Thermal Impedance SiC Substrate via Adhesive Wafer Bonding Technique","authors":"Wei-Cheng Feng;Yang-Jeng Chen;Chung-Wei Hsiao;Bo-Hong Chen;Jing-Ya Chiu;Lu-Kuan Du;Zong-Ting Wang;Chih-Min Liao;Yi-Jen Chiu","doi":"10.1109/JSTQE.2026.3666229","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3666229","url":null,"abstract":"Herein, a new approach of semiconductor laser is developed by integrating a vertical 1500-nm ridge-type InGaAsP P-i-N heterojunction Fabry–Pérot laser structure onto a SiC substrate via BCB adhesive wafer bonding technique. By taking advantage of a high thermal conductivity SiC substrate and thin <50 nm BCB, the whole laser structure with a low thermal impedance (TI) of 19.7 K/W was observed by measuring the wavelength shift, overall dissipated power, and substrate temperature, which could thus yield a high continuous wave output power of 30.4 mW. The laser exhibited a higher optical power level and a lower threshold current density than two other lasers with the same active regions but with InP and silicon-on-insulator (SOI) substrates, confirming that the low TI of the SiC substrate contributed to the laser performance enhancement. By simulating TI in structures with different substrate, it shows that the high thermal conductivity in SiC substrate with thin BCB can still be beneficial to the overall TI. The luminescent peak wavelength of the laser with the SiC substrate exhibited a strong blue-shift phenomenon, even at current densities above the threshold current density, indicating that the low TI of the substrate considerably reduced laser self-heating caused by current injection. A III–V material heterogeneously integrated into a SiC substrate scheme using the wafer bonding technique could have wide applications in high-performance, low-cost, process-facilitated photonic integrated circuits.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-9"},"PeriodicalIF":5.1,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Analysis of Bioassays Based on Microlaser Ensembles 基于微激光系统的生物检测理论分析

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-17 DOI: 10.1109/JSTQE.2026.3665681

Weishu Wu;Xudong Fan

{"title":"Theoretical Analysis of Bioassays Based on Microlaser Ensembles","authors":"Weishu Wu;Xudong Fan","doi":"10.1109/JSTQE.2026.3665681","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3665681","url":null,"abstract":"We present a bioassay platform based on microlaser ensembles, offering a sensitive assay method with a high dynamic range. In this platform, microlasers are functionalized to capture analytes. The captured analytes introduce quenchers, thus increasing microlasers’ lasing thresholds and even turning off microlaser emission. We develop a theoretical model to count the number of quenchers and hence the number of captured analytes for microlasers by measuring their lasing thresholds. A statistical model is established to link the distribution of captured analytes to the lasing fraction of microlasers. Fundamentally different from digital ELISA, in which a microunit (such as a microbead) saturates when more than one analyte is present, the microlaser-based method can perform multiple quantized signal readouts by scanning the external pump across the lasing threshold. Therefore, this platform does not require the average number of analytes per microlaser be much lower than one, thus achieving a higher dynamic range. The detection limit and the factors that may affect the detection limit are also discussed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 4: Adv. Biophoton. in Emerg. Biomed. Tech. and Dev","pages":"1-10"},"PeriodicalIF":5.1,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Micro-Transfer Printing of SiGe BiCMOS Electronic Chiplets on Silicon 硅上SiGe BiCMOS电子小片的微转移印刷

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-13 DOI: 10.1109/JSTQE.2026.3664420

He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens

{"title":"Micro-Transfer Printing of SiGe BiCMOS Electronic Chiplets on Silicon","authors":"He Li;Tinus Pannier;Ye Gu;Prasanna Ramaswamy;Ruggero Loi;Patrick Heise;Mesut Inac;Alex Farrell;Antonio Jose Trindade;Alin Fecioru;Kristof Dhaenens;Toon De Baere;Nishant Singh;Laurens Bogaert;Senbiao Qin;Biwei Pan;Jing Zhang;Geert Van Steenberge;Peter Ossieur;Günther Roelkens","doi":"10.1109/JSTQE.2026.3664420","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3664420","url":null,"abstract":"We demonstrate micro-transfer printing (<inline-formula><tex-math>$mu$</tex-math></inline-formula>TP) and post-printing metallization of thin electronic chiplets on silicon, with a view to heterogeneously integrate electronic integrated circuits (EICs) with photonic integrated circuits (PICs). <inline-formula><tex-math>$mu$</tex-math></inline-formula>TP decouples the fabrication of EICs and PICs, and simultaneously enables their tight integration with high-throughput, small form-factor and on wafer-scale. In this study, we successfully established the process flow for releasing and printing 300 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m × 200 <inline-formula><tex-math>$mu$</tex-math></inline-formula>m SiGe BiCMOS electronic driver chiplets and electrically connecting these chiplets using a polymer ramp to overcome the 20-<inline-formula><tex-math>$mu$</tex-math></inline-formula> m chiplet thickness, providing a gain of 14 dB and bandwidth of over 35 GHz with low-parasitic interconnections. The proposed methodology provides a practical and mass-producible solution to realize the stacking of EICs on silicon photonic wafers for emerging applications such as co-packaged optics (CPO).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-8"},"PeriodicalIF":5.1,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum-Dot Surface-Emitting Lasers: Micropillar Cavities Grown by Molecular-Beam Epitaxy 量子点表面发射激光器：分子束外延生长的微柱腔

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-09 DOI: 10.1109/JSTQE.2026.3662809

Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Yakov Kovach;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil’ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov

引用次数: 0

40 nm/40 nm 3D-Stacked SPAD Pixels With Sub-10 μm Pitch and 2 ns Dead Time 40 nm/40 nm 3d堆叠SPAD像素，间距低于10 μm，死区时间为2 ns

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-04 DOI: 10.1109/JSTQE.2026.3661028

Hyo-Sung Park;Hyun-Seung Choi;Eunsung Park;Woo-Young Choi;Myung-Jae Lee

{"title":"40 nm/40 nm 3D-Stacked SPAD Pixels With Sub-10 μm Pitch and 2 ns Dead Time","authors":"Hyo-Sung Park;Hyun-Seung Choi;Eunsung Park;Woo-Young Choi;Myung-Jae Lee","doi":"10.1109/JSTQE.2026.3661028","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3661028","url":null,"abstract":"We present a comprehensive comparative study of passive quenching active recharge (PQAR) and active quenching active recharge (AQAR) analog front-ends (AFEs) designed for 64 × 64 pixel arrays of single-photon avalanche diode (SPAD) pixels. These AFEs were fabricated using a back-side illuminated (BSI) 3D-stacked 40 nm/40 nm CMOS image sensor process. While configured as an array, initial verification was conducted at the pixel level, comparing both AFE types. To enable a truly fair and direct performance evaluation, which was often difficult in prior independent studies due to the use of different devices, processes, architectures, or assumptions, both AFE types were fabricated under identical process, wafer, and layout conditions on the same die. The SPADs exhibit a breakdown voltage of 22.5 V, a low dark count rate (5.1 cps/μm2 at 2 V excess voltage), and a high photon detection probability (25.1% at 850 nm at 2 V excess voltage). The AQAR pixel occupies a larger area (88.56 μm2) compared to the PQAR pixel (55.75 μm2), reflecting an area-performance trade-off. We analyzed methodologies for defining SPAD dead time, adopting inter-arrival time histogram analysis under intensive light. Experimental results demonstrate precise dead time control for both AFEs, achieving a minimum dead time of 2 ns and confirming maximum count rates up to near 500 Mcps. Moreover, this study experimentally verifies the effectiveness of active quenching in afterpulse suppression, leading to reduced noise and consequently contributing to an improved signal-to-noise ratio. The results of this study provide useful information on the design trade-offs and performance of PQAR and AQAR AFEs for various high-performance single-photon detection applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 2: 3-D Horizons in Photonics: Integrated Circuits","pages":"1-11"},"PeriodicalIF":5.1,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11371710","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable Few-Mode Laser Source Based on a WRC-FPLD Coupled With a Microring Resonator 基于WRC-FPLD耦合微环谐振器的可重构少模激光源

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-03 DOI: 10.1109/JSTQE.2026.3660839

Ziyi Kang;Qiupin Wang;Junqi Liu;Chaotao He;Yanfei Zheng;Maorong Zhao;Pu Ou;Dan Lu;Guangqiong Xia;Zhengmao Wu

{"title":"Reconfigurable Few-Mode Laser Source Based on a WRC-FPLD Coupled With a Microring Resonator","authors":"Ziyi Kang;Qiupin Wang;Junqi Liu;Chaotao He;Yanfei Zheng;Maorong Zhao;Pu Ou;Dan Lu;Guangqiong Xia;Zhengmao Wu","doi":"10.1109/JSTQE.2026.3660839","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3660839","url":null,"abstract":"We propose and experimentally demonstrate a reconfigurable few-mode laser source through coupling a weak-resonant-cavity Fabry-Perot laser diode (WRC-FPLD) to a microring resonator (MRR), in which the MRR is utilized as an external cavity to implement self-injection. For such a scheme, when the feedback strength from the MRR to the WRC-FPLD is strong enough, the laser can enter a stable single-mode self-injection locking (SIO) state. Continuously increasing the feedback strength, two-mode and three-mode lasing states can be realized. Furthermore, the wavelength of few-mode lasing can be adjusted within dozens of GHz by varying the temperature of the MRR. Additionally, under relatively weak feedback strength, the laser exhibits an unlocked single-mode lasing state, which undergoes quasi-periodic bifurcation to a chaotic state, and finally reaches SIO with the increase of feedback strength. Under an optimized feedback strength, the effective bandwidth of the chaotic state arrives at 12.81 GHz. Such a reconfigurable few-mode laser source possesses some advantages, such as miniaturization, stability, and tunability, and it has application prospects in many fields, including mode-division multiplexing, optical sensing, and on-chip signal processing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 5: Self-Injection Locked Lasers and Assoc. Sys.","pages":"1-7"},"PeriodicalIF":5.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and In-Orbit Performance of a 1U 1 Gbit/s Optical Communication Terminal 一种1U 1gbit /s光通信终端的设计与在轨性能

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-02 DOI: 10.1109/JSTQE.2026.3655556

Niek Doelman;Gert Witvoet;Dick de Bruijn;Arjo Bos;Arnoud Delissen;Dong-Nhat Nguyen;Loes Scheers;Hedser van Brug;Robbert Voorhoeve;Kristiaan Broekens;Cornelis Willem Korevaar;Floris van Kempen

{"title":"Design and In-Orbit Performance of a 1U 1 Gbit/s Optical Communication Terminal","authors":"Niek Doelman;Gert Witvoet;Dick de Bruijn;Arjo Bos;Arnoud Delissen;Dong-Nhat Nguyen;Loes Scheers;Hedser van Brug;Robbert Voorhoeve;Kristiaan Broekens;Cornelis Willem Korevaar;Floris van Kempen","doi":"10.1109/JSTQE.2026.3655556","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3655556","url":null,"abstract":"A CubeSat-compatible optical communication terminal (CubeCAT) has been designed, manufactured, and tested in orbit. It achieves 1 Gbit/s data rate in downlink at low bit-error-rate (<inline-formula><tex-math>${leq ! 10^{-6}}$</tex-math></inline-formula>), has a 1U volume, <inline-formula><tex-math>$1.0 ,mathrm{k}mathrm{g}$</tex-math></inline-formula> mass and <inline-formula><tex-math>$10.8 ,mathrm{W}$</tex-math></inline-formula> power consumption. It is based on a compact and efficient optical architecture, a low mass and stable mechanical structure, a high performing and robust pointing control strategy and designed to be compliant with the CCSDS O3K standard, with Reed-Solomon 223/255 coding. For launch survival a dedicated enveloping suspension module has been realized. Being launched and onboard the NorSat-TD satellite, the CubeCAT terminal has established various successful in-orbit communication downlinks. Data from the optical ground stations TNO (The Hague, Netherlands), MeO (Grasse, France) and Izaña (Tenerife, Spain) have been analyzed and verify the CubeCAT design.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 1: Advances in Free Space Laser Communications","pages":"1-16"},"PeriodicalIF":5.1,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11370639","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emission in Closely Packed Eu (TTA)3(DPT) and Opportunities for Magnetic Dipole Enhancement 致密Eu (TTA)3（DPT）的发射和磁偶极子增强的机会

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-02-02 DOI: 10.1109/JSTQE.2026.3660572

Ashleigh K. Wilson;John Munga;Chi Yang;Tigran V Shahbazyan;Ezekiel Mills III;Terence Baker;Md. G.R. Chowdhury;Mikhail A. Noginov;Natalia Noginova

引用次数: 0

Full-Wave Simulation of Kerr Comb Generation Using FDTD 利用时域有限差分法模拟克尔梳的全波生成

IF 5.1 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2026-01-29 DOI: 10.1109/JSTQE.2026.3659816

Chenchen Wang;Qingyi Zhou;Zongfu Yu

{"title":"Full-Wave Simulation of Kerr Comb Generation Using FDTD","authors":"Chenchen Wang;Qingyi Zhou;Zongfu Yu","doi":"10.1109/JSTQE.2026.3659816","DOIUrl":"https://doi.org/10.1109/JSTQE.2026.3659816","url":null,"abstract":"The rapid development of optical frequency comb technology has enabled its application in various fields. Kerr frequency combs, based on third-order Kerr nonlinearity and high-Q microresonators, offer advantages including compactness and high efficiency. The generation of Kerr frequency combs involves complex nonlinear dynamics and is often modeled using the nonlinear Schrödinger equation or coupled-mode equations. However, these methods become challenging when faced with complex geometric and dispersive conditions or when the underlying physical assumptions no longer hold. In this work, we present a simulation study of the Kerr comb generation using the finite-difference time-domain (FDTD) method. We demonstrate that by utilizing over 1 billion grid points and millions of time steps, our FDTD simulation framework can accurately capture the spatiotemporal details of Kerr comb formation. This first-principles approach inherently incorporates various geometric and dispersion structures without relying on specific physical assumptions, providing a unified and comprehensive modeling perspective.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"32 3: Nanophotonics, Metamaterials and Plasmonics","pages":"1-7"},"PeriodicalIF":5.1,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146175963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0