Haipeng Wang;Wei Zhang;Xule Wang;Haihua Huang;Jing Qiu;Jieping Luo;Shijie Deng;Haizhi Song
{"title":"Modeling and Improvement of Single-Layer MoS2/Multilayer MoS2 Field Effect Transistor Photodetectors","authors":"Haipeng Wang;Wei Zhang;Xule Wang;Haihua Huang;Jing Qiu;Jieping Luo;Shijie Deng;Haizhi Song","doi":"10.1109/JSTQE.2025.3557583","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3557583","url":null,"abstract":"The single-layer MoS<sub>2</sub> and multilayer MoS<sub>2</sub> field-effect transistor photodetector models were simulated and analyzed by ATLAS device simulator of Silvaco. The spectral response, responsivity and transfer characteristics of the two field-effect transistor photodetector models were analyzed, respectively. We show that the photocurrent generated by a single-layer MoS<sub>2</sub> phototransistor depends solely on the illumination optical power at constant drain or gate voltage. And it shows good stability and photoresponse characteristics. In contrast, the modeled multilayer MoS<sub>2</sub> phototransistor exhibits better photovoltaic performance than the single-layer MoS<sub>2</sub> phototransistor, including wider spectral response and higher responsivity. These simulation results are basically consistent with the previous experimental data. These works are of great significance for the design and development of transition metal dichalcogenide-based advanced photodetectors.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Piezoplasmonic System for Enhanced Photonic Spin Hall Effect for Applications in Optical Refractive Index Sensing","authors":"Vinit Kumar;Jitendra Bahadur Maurya;Yogendra Kumar Prajapati","doi":"10.1109/JSTQE.2025.3556890","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3556890","url":null,"abstract":"The interplay of intense spin-orbit interactions (SOIs) with plasmonic and piezoelectric surfaces offers a promising solution for precise control over polarization states and wavefront shaping. Reconfigurable beam manipulation, driven by variable voltage and SOIs, has emerged as a key focus in advancing optical systems. Despite this potential, the mechanical rigidity of piezoelectric materials and their inherently static optical properties post-fabrication present significant challenges, restricting their adaptability and dynamic functionality. This study explores the integration of plasmonic and piezoelectric materials to overcome these limitations, enabling voltage-controlled modulation of refractive index and thickness for tunable SOIs. In this manuscript, the photonic spin Hall effect (PSHE), arising from the SOI of light, is demonstrated in a layered structure consisting of silver (Ag), the piezoelectric material PMN-PT, and an additional Ag layer. By applying a voltage bias (<italic>V<sub>B</sub></i>) of –5.874 V, left-hand circular polarization achieves a maximum conventional spin dependent shift (CSDS) of 143.357 μm for a PMN-PT layer thickness of 387 nm, outperforming previously reported PSHE studies. Further, the proposed PSHE framework demonstrates potential for antigen or complementary DNA detection, owing to the exceptional tunability of PMN-PT. A spin-dependent sensitivity of 610430.50 μm/RIU is achieved at a refractive index change of Δn = 1 × 10<sup>-3</sup> under a voltage bias of –5.874 V for complementary DNA sensing. Furthermore, the proposed sensor design (str-3) exhibits an extraordinary limit of detection (<inline-formula><tex-math>${bm{Lo}}{{{bm{D}}}_{{bm{sd}}}}$</tex-math></inline-formula>) of 1.638 × 10<sup>-9</sup> degree. RIU/μm, marking a significant advancement in precision optical sensing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
William Fraser;Radovan Korček;Daniel Benedikovič;Cameron Horvath;Shurui Wang;Martin Vachon;Rubin Ma;Jens H. Schmid;Pavel Cheben;Winnie N. Ye
{"title":"Single-Etch Silicon Nitride Grating Couplers for Multiband Applications in Quantum and Fiber Communications","authors":"William Fraser;Radovan Korček;Daniel Benedikovič;Cameron Horvath;Shurui Wang;Martin Vachon;Rubin Ma;Jens H. Schmid;Pavel Cheben;Winnie N. Ye","doi":"10.1109/JSTQE.2025.3574059","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3574059","url":null,"abstract":"Silicon nitride (Si<sub>3</sub>N<sub>4</sub>) is an attractive alternative to the silicon-on-insulator platform due to its broad spectral transparency window, low waveguide losses, and negligible two-photon absorption. However, the moderate refractive index contrast between the Si<sub>3</sub>N<sub>4</sub> waveguide core and the cladding presents challenges, including limiting the efficiency and performance of surface grating fiber-chip coupling devices. Addressing this issue is crucial to fully leveraging the advantages offered by the silicon nitride platform. While various strategies have been developed to enhance the performance of surface grating couplers, they often come with increasingly complex fabrication requirements. In this work, we present a set of high-efficiency silicon nitride grating couplers using standard single-etch fabrication processes. The devices are designed for three spectral regions: 950 nm, 1310 nm, and 1550 nm. Uniform grating couplers demonstrated experimental coupling efficiencies between −5.9 dB and −3.1 dB. Record-breaking performance was achieved using subwavelength metamaterial apodization and beam focalization, resulting in fiber-chip coupling losses as low as −2.5 dB, all achieved through a straight-forward single-etch fabrication process.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144279075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Concise Primer on Solid-State Quantum Emitters","authors":"Shicheng Yu;Xiaojie Zhang;Xia Lei;Liang Zhai","doi":"10.1109/JSTQE.2025.3573986","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3573986","url":null,"abstract":"Quantum emitters serve as essential on-demand photonic resources, generating quantum states of light such as single photons and entangled photon pairs while serving as interfaces between light and matter. Buried in the solid state, quantum emitters enable a straightforward adoption of advanced nanofabrication techniques, facilitating precise engineering of their photonic environment for scalable quantum technologies. In this review, we introduce the fundamentals of quantum emitters and the key metrics characterising their performance. We highlight three material platforms: quantum dots, defect centres in diamond, and defect centres in silicon carbide. We summarise the recent developments of these platforms and discuss their advancements in quantum applications, including quantum communication, computation, and sensing. Finally, we provide a comparison across the three platforms, along with an outlook on future directions and potential challenges.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-16"},"PeriodicalIF":4.3,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144680910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Editorial: Advancing Semiconductor Lasers: Scaling Power and Efficiency for Next-Generation Sensing Applications","authors":"Amirhossein Ghods","doi":"10.1109/JSTQE.2025.3549483","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549483","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-4"},"PeriodicalIF":4.3,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10944525","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Neural Responses to Fat Talk Depend on Body Weight: An fNIRS Study in Natural Conversations","authors":"Yinying Hu;Xiaojun Cheng;Yuqi Liu;Yafeng Pan;Xiangping Gao","doi":"10.1109/JSTQE.2025.3573919","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3573919","url":null,"abstract":"Fat talk—self-critical comments about weight or body—is common, especially among young women. It leads to body image issues like body surveillance and dissatisfaction, but individuals might recover by disengaging from fat talk. This study aims to investigate the neural mechanisms underlying fat talk, with particular emphasis on the moderating role of body weight. A total of 116 participants took part in a fat talk session, which was preceded and followed by discussions on non-body-related topics, such as sharing travel experiences or discussing room decor. These discussions were referred to as the pre-test and post-test talks, respectively. Brain activity in the frontal and parietal regions was continuously recorded using fNIRS throughout all phases. Results showed that participants with higher Body Mass Index (BMI) reported increased body surveillance following the fat talk, which subsided after the post-test talk; this pattern was not observed in participants with lower BMI. Neuroimaging findings revealed that higher BMI was associated with decreased functional connectivity among brain regions involved in body-related cognitive control during the fat talk, and increased connectivity in regions associated with emotional regulation during the post-test talk. In contrast, participants with lower BMI exhibited enhanced connectivity in cognitive control regions related to body surveillance both during and after the fat talk. These findings suggest distinct neural and regulatory responses to fat talk based on body weight.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"980 nm QW Micro-Lasers With Ultra-Low Threshold","authors":"Qi Lin;Ying Xue;Jie Huang;Wen Gu;Kei May Lau","doi":"10.1109/JSTQE.2025.3573291","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3573291","url":null,"abstract":"980 nm lasers, critical for pumping erbium-doped fiber amplifiers (EDFAs) in optical communication systems, are also gaining traction in emerging biological applications. To achieve dense integration and low power consumption, we developed high-performance 980 nm micro-lasers on both GaAs and Si substrates. This work combines quantum well (QW) active regions with micro-cavities, including micro-ring lasers (MRLs) and micro-disk lasers (MDLs) with optimized metal designs. Advanced passivation techniques were applied to suppress sidewall surface recombination, significantly improving laser performance. Here, we report the first room-temperature continuous-wave (CW) operation of electrically pumped QW micro-lasers at 980 nm. Achieving a low CW threshold current of 2.4 mA and operation at elevated temperatures exceeding 95 °C (measurement setup limit), the lasers also demonstrated sub-milliamp thresholds in pulsed mode. The optimized micro-lasers exhibited little degradation over six months of storage, showing stability. We discuss the limitations of QW micro-lasers, corresponding solutions, and the underlying physics. With their small footprint, low thresholds, and stable performance under preliminary tests, QW micro-lasers are promising on-chip light sources for dense photonic circuit integration.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Numerical Modeling of Integrated Coherent Ising Machine Using Spatially Multiplexed Silicon Nitride Microresonators","authors":"Menglong He;Kambiz Jamshidi","doi":"10.1109/JSTQE.2025.3571522","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3571522","url":null,"abstract":"In this paper, we present mathematical modeling and numerical analysis of an integrated coherent Ising machine (CIM) consisting of a network of coupled add-drop microring resonators. The proposed CIM exploits dual-pumped degenerate optical parametric oscillators (DOPOs) in silicon nitride (SiN), as a CMOS-compatible material, combined with all-optical reconfigurable spatial multiplexing. This approach benefits from the potential of on-chip all-optic computing to solve large-scale NP-hard computational problems, paving the way for a scalable and programmable photonic-based CIMs. We provide design considerations for the optimal phase-sensitive parametric amplifiers by using SiN-based DOPOs to implement a photonic Ising spin as the fundamental building block for CIMs. The binary coherent states of each spin can be optimized by controlling the power of both pumps and their detunings. We also explore the parameter space of optical coupler structures to realize ferromagnetic and antimagnetic coupling between DOPOs, which is required for mapping quadratic unconstrained binary optimization problems (QUBO) to the integrated Ising machine composed of a network of coupled DOPOs. Furthermore, the balanced and unbalanced coupling scenarios between spins are compared for improving spin-state homogeneity. Finally, the time evolution of sixteen coupled microresonators during ground-state search has been investigated as a proof-of-concept under different coupling schemes.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144255719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Continuous-Variable Source-Independent Quantum Random Number Generator With Phase-Insensitive Detection","authors":"Hongyi Zhou","doi":"10.1109/JSTQE.2025.3552899","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3552899","url":null,"abstract":"Quantum random number generators (QRNGs) harness quantum mechanical unpredictability to produce true randomness, which is crucial for cryptography and secure communications. Among various QRNGs, source-independent QRNGs (SI-QRNGs) relax the trust on the quantum source, allowing for flexible use of advanced detectors to achieve high randomness generation rates. Continuous-variable (CV) SI-QRNGs, in particular, hold promise for practical deployment due to their simplicity and randomness generation rates comparable to trusted-device QRNGs. In this work, we propose a novel CV-SI-QRNG scheme based on phase-insensitive detections, and provide security proof based on semi-definite programming (SDP). We introduce a dimension reduction technique, which rigorously reduces an infinite-dimensional SDP problem to a finite-dimensional one, enabling efficient computation while maintaining valid randomness lower bound. We further validate our method through simulations. These results demonstrate the feasibility of our framework, paving the way for practical and simple SI-QRNG implementations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143792878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soumyajit Sarkar;Murali K;Anindita Chandra;Susweta Das;Hari M Varma
{"title":"Spatio-Temporal Simulation of Laser Speckles Using Stochastic Differential Equations","authors":"Soumyajit Sarkar;Murali K;Anindita Chandra;Susweta Das;Hari M Varma","doi":"10.1109/JSTQE.2025.3571385","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3571385","url":null,"abstract":"Laser speckle imaging modalities are receiving considerable attention for applications in both superficial and deep tissue imaging. This growing interest arises from their straightforward and cost-effective instrumentation, as well as the ease of computational implementation. Recent developments in this field require the calibration of devices, which often necessitates the simulation of dynamic laser speckles in tissue. Previous simulation models have predominantly relied on statistical tools such as copulas or Fourier transform methods based on diffraction theory. In our recent work, we introduced the use of Stochastic Differential Equations (SDEs) to model the temporal evolution of speckles, utilizing a predetermined probability density function and temporal autocorrelation. We further extended this simulation to create a calibrating phantom by inputting the stochastic time series data generated by SDEs into a piezo actuator. In the previous studies, the time evolution of each pixel was modeled independently using multiple SDEs. In the current work, we introduce a method for generating spatio-temporal dynamics of speckles characterized by predefined spatial and temporal correlation structures. This approach integrates SDE with Cholesky decomposition and inverse sampling method to achieve the desired spatial correlation profiles. The simulation results are obtained for practically feasible experimental parameters, effectively generating speckles that closely approximate the values observed in experimental settings.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}