IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Call for Papers: Special issue on Advanced Biophotonics in Emerging Biomedical Technologies and Devices","authors":"","doi":"10.1109/JSTQE.2025.3555318","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3555318","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"9800106-9800107"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965862","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Publication Information","authors":"","doi":"10.1109/JSTQE.2025.3549256","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549256","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"C2-C2"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics","authors":"","doi":"10.1109/JSTQE.2025.3549262","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549262","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"C4-C4"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965600","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143839908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers: Special issue on Advances in Semiconductor Surface-emitting Lasers: VCSELs and PCSELs","authors":"","doi":"10.1109/JSTQE.2025.3549283","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549283","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"9800102-9800103"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965828","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Selected Topics in Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JSTQE.2025.3549260","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3549260","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"C3-C3"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965815","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143839866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers: Special Issue on Advances in High-Speed Intensity Modulation and Direct Detection Technologies","authors":"","doi":"10.1109/JSTQE.2025.3555316","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3555316","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"9800104-9800105"},"PeriodicalIF":4.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10965863","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Role of Counter Electrode in Perovskite Solar Cell on Silicon Substrate to Enhance Power Conversion Efficiency for CMOS-Compatible Applications","authors":"Eman Sawires;Sameh Abdellatif","doi":"10.1109/JSTQE.2025.3560119","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3560119","url":null,"abstract":"This study investigates the impact of various counter-electrode materials on the overall power conversion efficiency (PCE) of perovskite solar cells (PSCs) fabricated on silicon substrates. We examined four distinct configurations using fluorine-doped tin oxide (FTO) as bare cell, copper (Cu), aluminum (Al), and highly p-doped silicon wafers as counter electrodes. The results indicate that the PSCs with Cu achieved the highest short-circuit current density (<inline-formula><tex-math>${{J}_{SC}}$</tex-math></inline-formula>) of 17.11 mA/cm², while the p-doped silicon and aluminum showed lower <inline-formula><tex-math>${{J}_{SC}}$</tex-math></inline-formula> values of 16.19 mA/cm² and 16.51 mA/cm², respectively. Open-circuit voltage (<inline-formula><tex-math>${{V}_{OC}}$</tex-math></inline-formula>) values remained competitive across all cells, with FTO achieving a <inline-formula><tex-math>${{V}_{OC}}$</tex-math></inline-formula> of 0.98 V. Additionally, the maximum power conversion efficiency (PCE) was highest for Cu at 11.98%, while p-doped silicon achieved a PCE of 11.05%. Notably, the hysteresis index was consistent across all configurations, averaging around 15% to 16%. This comprehensive analysis contributes valuable insights toward developing high-efficiency, CMOS-compatible perovskite solar cells for integration into self-powered lab-on-chip systems.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 6: Photon. for Climate Chng. Mitigation and Adapt.","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cryogenic High-Speed Vertical-Cavity Surface-Emitting Lasers for Quantum Computing: A Review","authors":"Anjin Liu;Bo Yang;Wanhua Zheng","doi":"10.1109/JSTQE.2025.3558915","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3558915","url":null,"abstract":"Cryogenic computing such as superconducting computing and quantum computing is a promising alternative to handle the bottlenecks of computing power and power efficiency in classical high-performance computing systems. The high-speed energy-efficient data transfer between cryogenic temperature and room temperature for the superconducting quantum computing is a critical issue. The current electrical interconnect is difficult to meet the stringent requirements in the future quantum computing application with millions of qubits. The optical interconnect based on the fiber is a promising solution because the optical fiber data link has a higher modulation bandwidth, ultralow signal loss, and lower heat load. The cryogenic vertical-cavity surface-emitting lasers (VCSELs) with high modulation speed and low power consumption are the potential sources for the cryogenic optical interconnect. This paper reviews the progresses on cryogenic VCSELs, including the properties of semiconductors at cryogenic temperature, structure optimization, and static and dynamic performance.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electro-Thermal Analysis of Dynamically Phase Controlled GST-Based Metasurfaces Enhanced by Graphene's Plasmonic Effect","authors":"Seyed Asad Amirhosseini;Daniyal Khosh Maram","doi":"10.1109/JSTQE.2025.3558713","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3558713","url":null,"abstract":"The study presents a method for dynamically adjusting metasurfaces by manipulating the phase of incident light within the structure. Local heaters constructed from graphene are employed to perform this manipulation. Controlling the bias voltages applied to graphene can regulate the crystallization levels of phase-change materials, thus changing the metasurface's behavior. The plasmonic effect of graphene, which is caused by surface plasmon polaritons, is utilized to increase absorbance rates by adjusting structural parameters. The dynamic range of the proposed metasurface is achieved between <inline-formula><tex-math>$0^circ$</tex-math></inline-formula> and <inline-formula><tex-math>$300^circ$</tex-math></inline-formula> for the phase of reflected waves at <inline-formula><tex-math>$lambda = 1.55$</tex-math></inline-formula> μm wavelength. The simulation has been done by emphasizing the inclusion of Four nonlinear factors that link temperature and electric current, which include the electrical conductivity <inline-formula><tex-math>$sigma (T(t))$</tex-math></inline-formula> of graphene and Ge <inline-formula><tex-math>$_{2}$</tex-math></inline-formula> Sb<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>Te<inline-formula><tex-math>$_{5}$</tex-math></inline-formula> (GST) material, the thermal conductivity <inline-formula><tex-math>$kappa (T(t))$</tex-math></inline-formula>, and the crystallinity percentage <inline-formula><tex-math>$L_{c}(T(t))$</tex-math></inline-formula> of GST material at different temperatures. As temperature distribution throughout the GST material is non-uniform, making it difficult to predict the crystalline percentage uniformly, Two scenarios have been adopted in this work to simulate the crystalline percentage as accurately as possible. Furthermore, we demonstrate the metasurface's efficacy as a beam steering and LiDAR device, emphasizing its enhanced thermal isolation between unit cells and the synergistic integration of graphene's plasmonic effects to achieve superior absorption and reconfigurable functionality.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Calibrating Intelligent OCT-SLO System","authors":"Mayank Goswami","doi":"10.1109/JSTQE.2025.3557860","DOIUrl":"https://doi.org/10.1109/JSTQE.2025.3557860","url":null,"abstract":"A unique sample-independent 3D self-calibration methodology is tested on a unique optical coherence tomography and multi-spectral scanning laser ophthalmoscope (OCT-SLO) hybrid system. Operators’ visual cognition is replaced by computer vision using the proposed novel fully automatic AI-driven system design. Sample-specific automatic contrast adjustment/focusing of the beam is achieved on the pre-instructed region of interest. The AI model dedicates infrared, fluorescence, and visual spectrum optical alignment by quantitatively estimating pre-instructed features. The tested approach, however, is flexible enough to utilize any apt AI model. Relative comparison with classical signal-to-noise-driven automation is shown to be ∼200% inferior and ∼130% slower than the AI-driven approach. The best spatial resolution of the system is found to be: (a) 2.41 microns in glass bead eye phantom, 0.76 <inline-formula><tex-math>$ pm $</tex-math></inline-formula> 0.46 microns in the mouse retina in the axial direction, and (b) better than 228-line pair per millimeter (lp/mm) or 2 microns for all three spectrums, i.e., 488 nm, 840 nm, and 520–550 nm emission in coronal/frontal/x-y plane. Intelligent automation reduces the possibility of developing cold cataracts (especially in mouse imaging) and patient-associated discomfort due to delay during manual alignment by facilitating easy handling for swift ocular imaging and better accuracy. The automatic novel tabletop compact system provides <italic>true</i> functional 3D images in three different spectrums for dynamic sample profiles. This is especially useful for photodynamic imaging treatment.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-14"},"PeriodicalIF":4.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}