IEEE Journal of Selected Topics in Quantum Electronics最新文献

{"title":"Editorial Interview: Recent Industrial Applications and Outlook of Hollow-Core Optical Fibers","authors":"Patrick Uebel","doi":"10.1109/JSTQE.2024.3500232","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3500232","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-3"},"PeriodicalIF":4.3,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10774075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial: Advances and Applications of Hollow-Core Fibers","authors":"Michael H. Frosz;Thomas D. Bradley;Md. Selim Habib;Christos Markos;John Travers;Yingying Wang","doi":"10.1109/JSTQE.2024.3494952","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494952","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 6: Advances and Applications of Hollow-Core Fibers","pages":"1-1"},"PeriodicalIF":4.3,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10767107","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Sergey Troshkov;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3503724","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3503724","url":null,"abstract":"We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al\u0000_0.2\u0000Ga\u0000_0.8\u0000As/Al\u0000_0.9\u0000Ga\u0000_0.1\u0000As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142821240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Coupled Wave Theory for Triangular Lattice TM-Polarised Photonic Crystal Surface Emitting Lasers","authors":"Matthew N Robinson;Stephen John Sweeney;Richard A Hogg","doi":"10.1109/JSTQE.2024.3502794","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3502794","url":null,"abstract":"This paper presents a coupled-wave analysis of triangular-lattice photonic crystal surface emitting lasers (PCSELs) with transverse magnetic polarization. Six plane waves coupled by Bragg diffraction describe the two-dimensional optical coupling. Resonant mode frequencies are calculated for a lattice of circular holes at various fill factors and compared to the plane-wave expansion method. Analytical equations for coupling constants and mode frequencies are derived, and mode degeneracy as a function of fill factor is examined. Comparison to a square lattice TM mode PCSEL shows improved in-plane 2D coupling. The general equations for arbitrary unit cell dielectric functions are discussed, with predictions of the lasing mode supported by finite device calculations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications","authors":"Priyanka Petluru;Christopher R. Allemang;Shang Liu;Jifeng Liu;Tzu-Ming Lu","doi":"10.1109/JSTQE.2024.3499859","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3499859","url":null,"abstract":"Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm\u0000²\u0000/Vs and 2.05 cm\u0000²\u0000/Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. This work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of the Waveguide Integrated GeSn PDs on a SiN Platform in $2,mathrm{mu m}$ Wavelength Band","authors":"Mingming Li;Jun Zheng;Zhigang Song;Wanhua Zheng","doi":"10.1109/JSTQE.2024.3493913","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493913","url":null,"abstract":"Silicon Nitride (SiN) platform, as an integrated photonics platform compatible with CMOS technology, is increasingly competitive. However, active devices on SiN platform, such as 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photodetector(PD), remain relatively scarce. In this work, 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band SiN waveguide GeSn PDs based on the SiN process platform were designed, including passive SiN waveguides, tapers, and GeSn PDs. The incident light's optical field propagating in the SiN waveguide couples downward into the GeSn absorption layer in the form of an evanescent wave, achieving efficient light transmission and absorption. The Maxwell's equations are solved using the finite difference method to obtain the field distribution of the electromagnetic components on the cross-section of the waveguide, determining the dimensions of the SiN waveguide and taper for single-mode transmission. Additionally, a taper structure gradually narrowing from the input end to the output end is employed to connect the waveguide above the active layer. This structure achieves a bandwidth of 75 GHz and a responsivity of 1 A/W at 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 for the Ge\u0000<inline-formula><tex-math>${_{0.86}}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>${_{0.14}}$</tex-math></inline-formula>\u0000 PD by simulation. The design of waveguide integrated GeSn PD on SiN platform provides meaningful guidance for the preparation of 2\u0000<inline-formula><tex-math>$,mathrm{mu m}$</tex-math></inline-formula>\u0000 wavelength band photonic integrated circuits (PIC).","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Maria Tchernycheva;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3494245","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494245","url":null,"abstract":"A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simplified Designs of Ge1-ySny/Si(100) Diodes for Facile Integration With Si Technologies: Synthesis, Electrical Performance and Modeling Studies","authors":"Dhruve A. Ringwala;Matthew A. Mircovich;Manuel A. Roldan;John Kouvetakis;José Menéndez","doi":"10.1109/JSTQE.2024.3494541","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3494541","url":null,"abstract":"This paper describes the properties of \u0000<italic>pin</i>\u0000 Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000 diodes (\u0000<italic>y</i>\u0000 = 4.4-10% Sn) grown directly on Si(100) wafers as a way to investigate the impact of eliminating the Ge buffer layers used conventionally for the integration of GeSn devices on Si. The technology offers a simplified and potentially lower-cost alternative for SWIR-LWIR applications. Two device designs are discussed. The first design adopts a layer sequence \u0000<italic>n</i>\u0000-Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000/\u0000<italic>i</i>\u0000-Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000/\u0000<italic>p</i>\u0000-Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000/Si, featuring a single defected bottom interface between the \u0000<italic>p</i>\u0000 layer and the Si wafer. This was followed by an even simpler \u0000<italic>n</i>\u0000-Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000/\u0000<italic>i</i>\u0000-Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000 /\u0000<italic>p</i>\u0000-Si heterostructure design. In both cases, the top \u0000<italic>i</i>\u0000/\u0000<italic>n</i>\u0000 interface is pseudomorphic and potentially defect-free. The Ge\u0000_1-y\u0000Sn\u0000_y\u0000 layers are produced by CVD reactions of Ge\u0000₃\u0000H\u0000₈\u0000 and SnH\u0000₄\u0000 at temperatures ranging from 290 °C to 300 °C. The \u0000<italic>n</i>\u0000-type electrodes in the samples were doped with As using As(SiH\u0000₃\u0000)\u0000₃\u0000, and the \u0000<italic>p</i>\u0000-type GeSn layers were doped using diborane as the source of B-atoms. All samples were characterized by XRD, RBS, IR-ellipsometry, AFM and TEM. The layers were found to be monocrystalline single-phase alloys exhibiting mostly relaxed strain states and top surfaces devoid of the cross-hatch surface patterns that are typical of Ge\u0000_1-\u0000<italic>_y</i>\u0000Sn\u0000<italic>_y</i>\u0000 films grown on Ge buffers. Current-voltage \u0000<italic>I-V</i>\u0000 curves of fabricated devices over the 4.4-10% Sn range of interest showed that rectifying behavior is readily attained. It appears that the effect of eliminating the Ge-buffer is an increase of only one order magnitude in the density of defects responsible for the dark current, together with an increase in residual doping in the nominally intrinsic layer. The results suggest that these deleterious effects may be further reduced with improved sample designs, particularly at high Sn-concentrations, opening up new alternatives for the effective integration of GeSn- and Si technologies.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Formal Scheme of Fault Injection on Coherent Integrated Photonic Neural Networks","authors":"Ye Su;Xiao Jiang;Fang Xu;Yichen Ye;Zhuang Chen;Simi Lu;Weichen Liu;Yiyuan Xie","doi":"10.1109/JSTQE.2024.3493857","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3493857","url":null,"abstract":"Based on Mach-Zehnder interferometers (MZIs) coherent integrated photonic neural networks (PNNs) may provide a promising solution for the realization of deep learning with low power consumption, low latency, and ultra-high speed. Adversarial attacks have been widely confirmed to be a serious threat to deep learning. This has led to a large amount of studies in this direction of the electronic domain, including input attacks and inject faults for weights. In this paper, focusing on the phases in the linear operation unit of PNNs, a phase gradient attack (PGA) scheme based on the phase gradient sorting of the MZI-arrays and injecting disturbances along the gradient direction is proposed for the first time. The simulation results indicate that even with weak-intensity PGA, it is almost impossible for PNNs to perform the classification inference. Furthermore, taking into account the effects of fabrication-process variations (FPV) and thermal crosstalk in MZI-arrays that lead to tuning phase deviation in practical application, we systematically analyzed the validity of proposed scheme on the PNNs with phase uncertainties. Specifically, we tested the impact of injecting faults by compressing the number of attacked phase angles to 3, 5, and 7, respectively. The experiment results show that injection attack based using PGA on PNNs trained with Gaussian datasets would reduce classification accuracy to 27.97%, 15.47%, and 8.91% for corresponding cases.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum-Squeezing-Engineered Third-Order Kerr Nonlinearity and Optical High-Order Sideband Comb in a Composite Resonator-Atom System","authors":"Chang Gao;Fei-Fei Liu;Ze-Qiang Fan;Ling Fan;Ru Zhang;Cong Cao","doi":"10.1109/JSTQE.2024.3492261","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3492261","url":null,"abstract":"Optical microresonators can greatly enhance light-matter interactions and reduce the power necessary to observe nonlinear optical effects. Manipulation and application of atom-resonator-coupling-induced strong nonlinearity have received much attention in recent years. Here, we present a scheme to realize quantum-squeezing-engineered third-order Kerr nonlinearity and optical high-order sideband comb in a composite system consisting of a two-level atom and two directly coupled whispering-gallery-mode optical microresonators. By quantum squeezing one of two coupled resonator modes in this system, the effective resonator-resonator and atom-resonator coupling rates as well as the frequency of the squeezed resonator mode can be effectively controlled. Based on this mechanism, we show that the Kerr nonlinearity of the composite system can be effectively engineered by using the resonator-mode squeezing when the system is monochromatically driven beyond the weak-excitation limit. On the other hand, when the composite system is bichromatically driven, the optical high-order sideband combs formed in the transmission spectra of the system can also be effectively engineered by the resonator-mode squeezing. Therefore, our scheme provides a novel mechanism to control the physical properties of composite resonator-atom systems for various applications, and demonstrates that optical nonlinear effects induced by the atom-resonator coupling can be effectively engineered via quantum squeezing.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}