IEEE Journal of Selected Topics in Quantum Electronics最新文献_第5页

Classification of Children With Developmental Language Disorder Using Task fNIRS Data and Convolutional Neural Network 基于任务近红外光谱和卷积神经网络的发展性语言障碍儿童分类

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-18 DOI: 10.1109/JSTQE.2024.3519572

Aimin Liang;Zhijun Cui;Jin Ding;Bingxun Lu;Chunyan Qu;Shijie Li;Mengya Yin;Xiaolin Ning;Jiancheng Fang

{"title":"Classification of Children With Developmental Language Disorder Using Task fNIRS Data and Convolutional Neural Network","authors":"Aimin Liang;Zhijun Cui;Jin Ding;Bingxun Lu;Chunyan Qu;Shijie Li;Mengya Yin;Xiaolin Ning;Jiancheng Fang","doi":"10.1109/JSTQE.2024.3519572","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3519572","url":null,"abstract":"Developmental language disorder (DLD) presents significant clinical challenges and has lasting impacts on children. This study aims to develop a classification model for young children with DLD based on their brain function signals. Children aged 3.0 to 7.0 years participated in this study, including 21 children with DLD and 43 controls. All participants completed functional near-infrared spectroscopy (fNIRS) tasks designed to assess word expression ability (report task) and word comprehension ability (point task). General linear model (GLM) analysis was conducted to compare activation differences across fNIRS channels between the two groups. For DLD classification, a one-dimensional Convolutional Neural Network (CNN) was applied to hemoglobin oxygenation (HbO) signals from three regions of interest (ROIs), which included the bilateral inferior frontal gyrus (encompassing Broca's area), the bilateral temporo-parietal junction (encompassing Wernicke's area), and the bilateral motor cortex. Using HbO signal features the bilateral inferior frontal gyrus during the word expression task, the CNN model achieved a validation F1 score of 72.89%. Similarly, using HbO signal features from from the bilateral temporo-parietal junction during the word comprehension task, the CNN model achieved a validation F1 score of 71.81%. Additionally, children with DLD showed atypical activation in the right temporo-parietal junction area and left inferior frontal gyrus during both tasks. Our findings demonstrate that brain signals recorded during language tasks can effectively differentiate young children with DLD, highlighting the potential of task-based fNIRS as a valuable adjunct in the clinical diagnosis of DLD.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-9"},"PeriodicalIF":4.3,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10806560","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Fabrication of Orthogonal Lattice Waveguide With Partial Air Cladding Layers for Circular Defect in 2-Dimensional Photonic Crystal Laser Diode

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-17 DOI: 10.1109/JSTQE.2024.3519611

Y. Kudo;K. Sato;H. Kubota;Y. Adachi;H. Ye;R. Zuo;M. Morifuji;H. Kajii;A. Maruta;T. Yagi;M. Kondow

{"title":"Design and Fabrication of Orthogonal Lattice Waveguide With Partial Air Cladding Layers for Circular Defect in 2-Dimensional Photonic Crystal Laser Diode","authors":"Y. Kudo;K. Sato;H. Kubota;Y. Adachi;H. Ye;R. Zuo;M. Morifuji;H. Kajii;A. Maruta;T. Yagi;M. Kondow","doi":"10.1109/JSTQE.2024.3519611","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3519611","url":null,"abstract":"Circular defect in 2-dimensional photonic crystal (CirD) microcavities hold great promise for wavelength division multiplexing (WDM), allowing intra-chip optical communications. This paper proposes and explores a structure with air cladding layers only in the orthogonal lattice waveguide (OLW) region to achieve a wide bandwidth of over 20 nm and the high output power required for WDM. Band calculations confirmed a wider bandwidth in the air cladding structure than in the AlOx cladding. Furthermore, 3-dimensional finite-difference time-domain simulations reveal approximately five times higher output compared to conventional structures. Experiments were conducted to fabricate the OLW structure with air cladding layers. Optimization of the etching conditions using buffered hydrogen fluoride etchant successfully removed the AlOx cladding layers and achieved the desired structure. The output lights from the fabricated samples were measured under photo-pumping excitations, confirming increased output intensity due to the air cladding structure. These results demonstrate significant potential for the application of CirD lasers for WDM integrated devices.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Dynamic Range Superconducting Nanowire Single Photon Detectors 高动态范围超导纳米线单光子探测器

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-16 DOI: 10.1109/JSTQE.2024.3518598

Xiaoqing Zheng;Tianzhu Zhang;Ying Chen;Hui Zhou;Hao Li;Lixing You

{"title":"High Dynamic Range Superconducting Nanowire Single Photon Detectors","authors":"Xiaoqing Zheng;Tianzhu Zhang;Ying Chen;Hui Zhou;Hao Li;Lixing You","doi":"10.1109/JSTQE.2024.3518598","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3518598","url":null,"abstract":"Superconducting nanowire single-photon detectors (SNSPDs) play a prominent role in sparse photon detection, but they tend to exhibit latching or saturation issues when confronted with high flux photons, which is commonly observed in applications such as deep space communication, LiDAR and passive imaging. Therefore, expanding the dynamic range of SNSPDs becomes indispensable. Inspired by the photoreceptor cells on human retina, this study conducted a biomimetic design of SNSPDs. The arrangement of pixels imitated the distribution of cone and rod cells, and the photosensitivity of these two different cells to the incident photons was altered by adjusting parameters such as linewidth, polarization, photosensitive area, and bias current. This design significantly enhances the overall dynamic range of the device, facilitating a linear response to incident photon flux ranging from 10\u00003\u0000 photons/s to 1.16×10\u000014\u0000 photons/s, and the dynamic range is 110.64 dB. Furthermore, imaging experiments using digital micromirror device (DMD) were performed to simulate high dynamic scenes. Combined with compressive sensing single pixel imaging strategy, imaging of incident light within a 90 dB range was achieved, demonstrating the functionality of the device over an extremely wide dynamic range.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Directional-Emission GeSn Multi-Quantum-Well Light-Emitting Diodes on Si 硅基定向发射GeSn多量子阱发光二极管的设计

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-11 DOI: 10.1109/JSTQE.2024.3515048

Qimiao Chen;Weijie Mao;Lin Zhang;Chuan Seng Tan

{"title":"Design of Directional-Emission GeSn Multi-Quantum-Well Light-Emitting Diodes on Si","authors":"Qimiao Chen;Weijie Mao;Lin Zhang;Chuan Seng Tan","doi":"10.1109/JSTQE.2024.3515048","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3515048","url":null,"abstract":"Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scopes. Despite the potential of GeSn-based LEDs for short-wave infrared (SWIR) and mid-wave infrared (MIR) applications due to their CMOS compatibility and direct bandgap, these devices suffer from low directionality and light extraction efficiency. This study proposes a novel approach by integrating a dielectric metasurface with GeSn MQW LEDs to achieve directional light emission. We numerically demonstrate that this integration reduces the full width at half-maximum (FWHM) angle of the far-field emission from 60 to 10 degrees and enhances the emission intensity by a factor of 26 at normal incidence. These improvements suggest that metasurface-integrated GeSn LEDs hold significant promise for applications that require high brightness and precise directionality.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxyhemoglobin Measurements Using 1064 nm Light 氧合血红蛋白测量使用1064nm光

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-09 DOI: 10.1109/JSTQE.2024.3512776

Laura Di Sieno;Alessandro Bossi;Francesco Sangalli;Alessandro Torricelli;Ilias Tachtsidis;Turgut Durduran;Antonio Pifferi;Alberto Dalla Mora

{"title":"Oxyhemoglobin Measurements Using 1064 nm Light","authors":"Laura Di Sieno;Alessandro Bossi;Francesco Sangalli;Alessandro Torricelli;Ilias Tachtsidis;Turgut Durduran;Antonio Pifferi;Alberto Dalla Mora","doi":"10.1109/JSTQE.2024.3512776","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3512776","url":null,"abstract":"While standard optical oximetry systems make use of two/more wavelengths across the isosbestic point of oxy/deoxy-hemoglobin and between 650 and 900 nm, this work explores the possibility to use only light at 1064 nm wavelength to detect the absolute oxyhemoglobin concentration in tissues using time-domain diffuse optics. Furthermore, the possibility to exploit a 1064 nm wavelength coupled with wavelengths of classical approaches is also discussed. Our findings demonstrate a reasonable overlap of the new approaches as compared to the standard one, with confined discrepancies potentially linked to a not established agreement in the scientific community on the exact value of extinction coefficients of tissue constituents beyond 1000 nm, as well as to an increased penetration depth in the tissue at 1064 nm due to a lower scattering coefficient as compared to the visible range. These findings open the way to further studies in the field, also given the increasing advancements in lasers and detectors at 1064 nm.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 4: Adv. in Neurophoton. for Non-Inv. Brain Mon.","pages":"1-6"},"PeriodicalIF":4.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quasi PT-Symmetric Edge-Emitting Lasers Outperform PT-Symmetric Ones 准pt对称边缘发射激光器优于pt对称激光器

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-09 DOI: 10.1109/JSTQE.2024.3513458

Babak Olyaeefar;Enes Şeker;Ramy El-Ganainy;Abdullah Demir

{"title":"Quasi PT-Symmetric Edge-Emitting Lasers Outperform PT-Symmetric Ones","authors":"Babak Olyaeefar;Enes Şeker;Ramy El-Ganainy;Abdullah Demir","doi":"10.1109/JSTQE.2024.3513458","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3513458","url":null,"abstract":"In recent years, engineering the spatial distribution of optical gain and loss has emerged as a new paradigm for tailoring light transport, trapping, and its interaction with matter. In this regard, it was shown that the notion of PT-symmetry can be employed to build new on-chip laser devices that operate in single longitudinal/transverse mode. Until recently, however, obtaining realistic power output and beam qualities from these systems was impossible. A recent study on quasi-PT-symmetric (q-PTS) lasers has changed this landscape by demonstrating up to 0.5 W output power with a high-quality Gaussian beam profile. In that work, PTS was implemented only for the higher-order mode in what can be considered a two-mode supersymmetric laser. Encouraged by these results and to present a clear roadmap for building practical chip-scale lasers with high performance, here we present a detailed comparison between the performance of PTS and q-PTS lasers in terms of power, mode filtering, and beam quality. Our experimental results, which are also supported by theoretical analysis, indicate that both q-PTS and PTS lasers scale similarly in terms of output power levels as a function of the pump current. However, when it comes to mode filtering and beam quality, our results clearly indicate that quasi-PTS lasers outperform PTS counterpart devices by a large margin. This can be explained by noting that while PTS geometry provides modal filtering for the higher order modes in the lasing cavity, it introduces side lobe contribution from the passive cavity which degrades the far-field emission pattern.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Journal of Selected Topics in Quantum Electronics Publication Information IEEE量子电子学专题杂志出版信息

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JSTQE.2024.3499575

引用次数: 0

IEEE Journal of Selected Topics in Quantum Electronics Information for Authors IEEE量子电子信息专题杂志

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JSTQE.2024.3499579

引用次数: 0

IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics IEEE量子电子学主题代码和主题选刊

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JSTQE.2024.3499581

引用次数: 0

Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers 高温GeSn和GeC/GeCSn激光器的约束和阈值建模

IF 4.3 2区工程技术

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-04 DOI: 10.1109/JSTQE.2024.3511716

Md. Shamim Reza;Tuhin Dey;Augustus W. Arbogast;Qian Meng;Seth R. Bank;Mark A. Wistey

引用次数: 0