Design of Directional-Emission GeSn Multi-Quantum-Well Light-Emitting Diodes on Si

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-11 DOI:10.1109/JSTQE.2024.3515048

Qimiao Chen;Weijie Mao;Lin Zhang;Chuan Seng Tan

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引用次数: 0

Abstract

Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scopes. Despite the potential of GeSn-based LEDs for short-wave infrared (SWIR) and mid-wave infrared (MIR) applications due to their CMOS compatibility and direct bandgap, these devices suffer from low directionality and light extraction efficiency. This study proposes a novel approach by integrating a dielectric metasurface with GeSn MQW LEDs to achieve directional light emission. We numerically demonstrate that this integration reduces the full width at half-maximum (FWHM) angle of the far-field emission from 60 to 10 degrees and enhances the emission intensity by a factor of 26 at normal incidence. These improvements suggest that metasurface-integrated GeSn LEDs hold significant promise for applications that require high brightness and precise directionality.

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硅基定向发射GeSn多量子阱发光二极管的设计

红外发光二极管（IR led）对各种技术至关重要，包括通信、传感和医疗诊断。最近的进展是引入了定向发射红外led，它提供了更好的光方向控制，提高了效率，扩大了应用范围。尽管基于gsn的led由于其CMOS兼容性和直接带隙而具有短波红外（SWIR）和中波红外（MIR）应用的潜力，但这些器件的方向性和光提取效率较低。本研究提出了一种将介电超表面与GeSn MQW led集成以实现定向发光的新方法。数值计算表明，该积分将远场发射的半最大角全宽度从60度减小到10度，并将发射强度提高了26倍。这些改进表明，超表面集成的GeSn led在需要高亮度和精确定向的应用中具有重要的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.