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Ultra-high bandwidth InP IQ modulators for next generation coherent transmitter 用于下一代相干发射机的超高带宽InP IQ调制器
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240423
Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, H. Tanobe, S. Nakano, H. Yamazaki, T. Fujii, E. Yamada, N. Nunoya, N. Kikuchi
{"title":"Ultra-high bandwidth InP IQ modulators for next generation coherent transmitter","authors":"Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, H. Tanobe, S. Nakano, H. Yamazaki, T. Fujii, E. Yamada, N. Nunoya, N. Kikuchi","doi":"10.1109/CSICS.2017.8240423","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240423","url":null,"abstract":"We present recently developed ultra-high bandwidth and low V„ InP-based in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The IQ modulator itself exhibits up to 120-Gbaud rate IQ modulations without optical pre equalization. Furthermore, we examined a low-power dissipation IQ modulator co-assembled with a 495-mW/2ch CMOS differential driver IC, and successfully demonstrated a 64-Gbaud/16QAM operation.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127517925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gallium oxide technologies and applications 氧化镓技术及应用
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240464
G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak
{"title":"Gallium oxide technologies and applications","authors":"G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak","doi":"10.1109/CSICS.2017.8240464","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240464","url":null,"abstract":"In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga<inf>2</inf>O<inf>3</inf>. MOSFETs formed by homoepitaxial growth of β-Ga<inf>2</inf>O<inf>3</inf> films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124382141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hybrid CMOS System-on-Chip/InP MMIC systems for deep-space planetary exploration at mm-Wave and THz 用于毫米波和太赫兹深空行星探测的混合CMOS片上系统/InP MMIC系统
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240419
A. Tang, T. Reck
{"title":"Hybrid CMOS System-on-Chip/InP MMIC systems for deep-space planetary exploration at mm-Wave and THz","authors":"A. Tang, T. Reck","doi":"10.1109/CSICS.2017.8240419","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240419","url":null,"abstract":"This paper discusses the applicability of hybrid CMOS/InP-MMIC mm-Wave systems to remote sensing instrumentation for space exploration in Earth and Planetary science. We review the need for lower power and lighter weight instruments to accommodate the limited payload resources of exploration spacecraft, and then demonstrate how hybrid systems can address these challenges. An example hybrid 65nm CMOS-InP radiometer operating at 100 GHz is discoursed in detail including circuit & system design, interfacing and packaging techniques. Measurements are presented showing that the hybrid approach does not compromise instrument sensitivity.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"50 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124976590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of substrate-induced low frequency oscillations in GaAs HBT devices and circuits GaAs HBT器件和电路中衬底诱导低频振荡的特性
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240441
M. Iwamoto, C. Hutchinson, B. Luk, T. Low, D. D'Avanzo
{"title":"Characteristics of substrate-induced low frequency oscillations in GaAs HBT devices and circuits","authors":"M. Iwamoto, C. Hutchinson, B. Luk, T. Low, D. D'Avanzo","doi":"10.1109/CSICS.2017.8240441","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240441","url":null,"abstract":"Spurious oscillations in the low frequency region (below 100kHz) were investigated in InGaP/GaAs HBT devices and circuits. These low frequency oscillations (LFOs) are predominantly activated by the field across the semi-insulating GaAs substrate located between the subcollector and backside metal (of an emitter-up device). Several experiments were conducted to control and eliminate LFOs by floating the backside potential or applying a voltage to the backside metal. In both cases, the electric field across the GaAs substrate is minimized, thereby reducing the mechanism of the field-enhanced capture of electrons by traps in this region.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131535306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High speed data converters and their applications in optical communication system 高速数据转换器及其在光通信系统中的应用
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240455
D. Cui, Jun Cao, A. Nazemi, Tim He, Guansheng Li, B. Çatli, Kangmin Hu, Heng Zhang, Ben Rhew, Shiwei Sheng, Y. Shim, Bo Zhang, A. Momtaz
{"title":"High speed data converters and their applications in optical communication system","authors":"D. Cui, Jun Cao, A. Nazemi, Tim He, Guansheng Li, B. Çatli, Kangmin Hu, Heng Zhang, Ben Rhew, Shiwei Sheng, Y. Shim, Bo Zhang, A. Momtaz","doi":"10.1109/CSICS.2017.8240455","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240455","url":null,"abstract":"The rapid growth of data center traffic, driven by cloud technology adoption, has propelled the development of a variety of spectrally efficient modulation formats, such as 4-level pulse amplitude modulation (PAM4), quadrature phase shift keying (QPSK) and quadrature amplitude modulation (QAM). High speed CMOS DSP-based transceivers provide complex equalization scheme to compensate for the channel loss as well as the nonlinearity impairments introduced by chromatic and polarization dispersion. The recent development of ultra-high speed data converters has been a key enabling technology converting data signal between analog and digital domain, which has shaped the traditional communication transceiver systems. This paper covers the advancement of CMOS data converter technology and its wide application, as well as the future development and trend.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115001577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A compact, 37% fractional bandwidth millimeter-wave phase shifter using a wideband lange coupler for 60-GHz and E-band systems 一种紧凑的37%分数带宽毫米波移相器，采用宽带耦合器，适用于60 ghz和e波段系统
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240476
Navid Hosseinzadeh, J. Buckwalter
{"title":"A compact, 37% fractional bandwidth millimeter-wave phase shifter using a wideband lange coupler for 60-GHz and E-band systems","authors":"Navid Hosseinzadeh, J. Buckwalter","doi":"10.1109/CSICS.2017.8240476","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240476","url":null,"abstract":"A wideband 57.7–84.2 GHz Phase Shifter is presented using a compact Lange coupler to generate in-phase and quadrature signal. The Lange coupler is followed by two balun transformers that provide the IQ vector modulation with differential I and Q signals. The implemented Phase Shifter demonstrates an average 6-dB insertion loss and 5-dB gain variation. The measured average rms phase and gain errors are 7 degrees and 1 dB, respectively. The phase shifter is implemented in GlobalFoundries 45-nm SOI CMOS technology using a trap-rich substrate. The chip area is 385 μm × 285 μm and the Phase Shifter consumes less than 17 mW. To the best of authors knowledge, this is the first phase shifter that covers both 60 GHz band and E-band frequencies with a fractional bandwidth of 37%.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122947218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Design techniques for 32.75Gb/s and 56Gb/s wireline transceivers in 16nm FinFET 16nm FinFET中32.75Gb/s和56Gb/s有线收发器的设计技术
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240462
D. Turker, P. Upadhyaya, J. Im, S. Chen, Y. Frans, Ken Chang
{"title":"Design techniques for 32.75Gb/s and 56Gb/s wireline transceivers in 16nm FinFET","authors":"D. Turker, P. Upadhyaya, J. Im, S. Chen, Y. Frans, Ken Chang","doi":"10.1109/CSICS.2017.8240462","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240462","url":null,"abstract":"This paper describes circuit techniques for high speed transceivers used in FPGA applications. Three architectures in 16nm FinFET encompassing NRZ and PAM4 modulation are discussed. First, a 0.5–32.75Gb/s flexible reach NRZ transceiver achieves BER <10−15 over 30dB loss backplane at 32.75Gb/s while consuming 577mW. It features 3 stages of CTLE including a gain segmented AGC, 15 tap DFE, 2 LC PLLs and a ring PLL to offer continuous frequency range over both long and short reach channels. Secondly, a 40–56Gb/s PAM4 receiver with analog front end achieves BER<10−10 over a 10dB loss channel at 56Gb/s with crosstalk and consumes 230mW. It uses a direct feedback 10-tap DFE for power efficiency. Lastly, a 40–56Gb/s ADC based PAM4 transceiver achieves BER<10−8 over a 31dB loss channel at 56Gb/s with crosstalk. It features a 4 stage CTLE, an 8-bit SAR ADC, a 14 tap FFE and a 1 tap DFE to achieve long reach operation.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"350 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127344284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz 10GHz时OIP3/Pdc ~ 12dB的高性能n极GaN hemt
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240456
A. Arias, P. Rowell, J. Bergman, M. Urteaga, K. Shinohara, X. Zheng, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, E. Ahmadi, S. Keller, U. Mishra
{"title":"High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz","authors":"A. Arias, P. Rowell, J. Bergman, M. Urteaga, K. Shinohara, X. Zheng, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, E. Ahmadi, S. Keller, U. Mishra","doi":"10.1109/CSICS.2017.8240456","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240456","url":null,"abstract":"X-band power performance of N-polar GaN HEMTs is reported, including 2-tone results at 10GHz that demonstrate an OIP3/PDC linearity figure of merit of 12dB at a drain voltage of 20V, utilizing tuning of fundamental, second and third harmonic terminations. Compared to available linearity results of GaN HEMTs at 10GHz, the device technology presented here demonstrates the best such ratio reported at 10GHz for any GaN HEMT to date. The N-polar HEMT device exhibits very low 3rd order intermodulation distortion as well as single-tone high power-added efficiency (PAE) of ∼65% with an associated power density of 3W/mm that scales favorably with a drain voltage of 15V. These results show the suitability of N-polar GaN HEMTs for high performance X-band transceiver systems.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126411196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A novel two-dimensional changeover GaN MMIC switch for electrically selectable SPDT multifunctional device 一种用于电可选SPDT多功能器件的新型二维转换GaN MMIC开关
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240443
H. Mizutani, R. Ishikawa, K. Honjo
{"title":"A novel two-dimensional changeover GaN MMIC switch for electrically selectable SPDT multifunctional device","authors":"H. Mizutani, R. Ishikawa, K. Honjo","doi":"10.1109/CSICS.2017.8240443","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240443","url":null,"abstract":"This paper presents a novel frequency/amplitude two-dimensional change-over gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) switch. A frequency/amplitude two-dimensional changeover switch is an essential function block for electrically selectable single-pole-double-throw (SPDT) multifunctional devices in reconfigurable radio frequency (RF) front-end, which can change its function to SPDT switch, diplexer, duplexer, and so on. The demonstrated two-stage GaN MMIC indicates two-dimensional switching characteristics not only of changing the amplitude for ON/OFF states as the conventional switch but also of switching two frequency pass-bands between around 8-GHz and around 26-GHz. The insertion losses of lower than 1.6 dB and the isolations with higher than 13.3 dB are obtained for both pass-bands. The presented two-dimensional changeover switch function block promises to realize electrically selectable SPDT multifunctional devices for reconfigurable broadband RF front-end with low costs.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116845913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A CW 20W Ka-band GaN high power MMIC amplifier with a gate pitch designed by using one-finger large signal models 采用单指大信号模型设计了一种带门距的连续波20W ka波段GaN高功率MMIC放大器
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240422
Y. Yamaguchi, J. Kamioka, M. Hangai, S. Shinjo, K. Yamanaka
{"title":"A CW 20W Ka-band GaN high power MMIC amplifier with a gate pitch designed by using one-finger large signal models","authors":"Y. Yamaguchi, J. Kamioka, M. Hangai, S. Shinjo, K. Yamanaka","doi":"10.1109/CSICS.2017.8240422","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240422","url":null,"abstract":"This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output power as MMIC amplifier under CW operation. As a result, 21.7W output power under CW operation was successfully achieved with power added efficiency (PAE) of 19.8% at Ka-band by a single-ended MMIC. To the best of authors' knowledge, this output power is state-of-the-art for GaN MMIC amplifiers under CW operation at Ka-band.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130880124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
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