A. Arias, P. Rowell, J. Bergman, M. Urteaga, K. Shinohara, X. Zheng, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, E. Ahmadi, S. Keller, U. Mishra
{"title":"10GHz时OIP3/Pdc ~ 12dB的高性能n极GaN hemt","authors":"A. Arias, P. Rowell, J. Bergman, M. Urteaga, K. Shinohara, X. Zheng, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, E. Ahmadi, S. Keller, U. Mishra","doi":"10.1109/CSICS.2017.8240456","DOIUrl":null,"url":null,"abstract":"X-band power performance of N-polar GaN HEMTs is reported, including 2-tone results at 10GHz that demonstrate an OIP3/PDC linearity figure of merit of 12dB at a drain voltage of 20V, utilizing tuning of fundamental, second and third harmonic terminations. Compared to available linearity results of GaN HEMTs at 10GHz, the device technology presented here demonstrates the best such ratio reported at 10GHz for any GaN HEMT to date. The N-polar HEMT device exhibits very low 3rd order intermodulation distortion as well as single-tone high power-added efficiency (PAE) of ∼65% with an associated power density of 3W/mm that scales favorably with a drain voltage of 15V. These results show the suitability of N-polar GaN HEMTs for high performance X-band transceiver systems.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz\",\"authors\":\"A. Arias, P. Rowell, J. Bergman, M. Urteaga, K. Shinohara, X. Zheng, H. Li, B. Romanczyk, M. Guidry, S. Wienecke, E. Ahmadi, S. Keller, U. Mishra\",\"doi\":\"10.1109/CSICS.2017.8240456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"X-band power performance of N-polar GaN HEMTs is reported, including 2-tone results at 10GHz that demonstrate an OIP3/PDC linearity figure of merit of 12dB at a drain voltage of 20V, utilizing tuning of fundamental, second and third harmonic terminations. Compared to available linearity results of GaN HEMTs at 10GHz, the device technology presented here demonstrates the best such ratio reported at 10GHz for any GaN HEMT to date. The N-polar HEMT device exhibits very low 3rd order intermodulation distortion as well as single-tone high power-added efficiency (PAE) of ∼65% with an associated power density of 3W/mm that scales favorably with a drain voltage of 15V. These results show the suitability of N-polar GaN HEMTs for high performance X-band transceiver systems.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
报道了n极GaN hemt的x波段功率性能，包括10GHz下的2音结果，在20V漏极电压下，利用基频、二次谐波和三次谐波调谐，OIP3/PDC线性系数为12dB。与现有的10GHz GaN HEMT线性度结果相比，本文介绍的器件技术展示了迄今为止任何GaN HEMT在10GHz下的最佳线性度比。n极HEMT器件具有非常低的三阶互调失真，单音高功率附加效率(PAE)为65%，相关功率密度为3W/mm，在漏极电压为15V时具有良好的缩放能力。这些结果表明n极GaN hemt适用于高性能x波段收发器系统。
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz
X-band power performance of N-polar GaN HEMTs is reported, including 2-tone results at 10GHz that demonstrate an OIP3/PDC linearity figure of merit of 12dB at a drain voltage of 20V, utilizing tuning of fundamental, second and third harmonic terminations. Compared to available linearity results of GaN HEMTs at 10GHz, the device technology presented here demonstrates the best such ratio reported at 10GHz for any GaN HEMT to date. The N-polar HEMT device exhibits very low 3rd order intermodulation distortion as well as single-tone high power-added efficiency (PAE) of ∼65% with an associated power density of 3W/mm that scales favorably with a drain voltage of 15V. These results show the suitability of N-polar GaN HEMTs for high performance X-band transceiver systems.
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