用于下一代相干发射机的超高带宽InP IQ调制器

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240423

Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, H. Tanobe, S. Nakano, H. Yamazaki, T. Fujii, E. Yamada, N. Nunoya, N. Kikuchi

{"title":"用于下一代相干发射机的超高带宽InP IQ调制器","authors":"Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, H. Tanobe, S. Nakano, H. Yamazaki, T. Fujii, E. Yamada, N. Nunoya, N. Kikuchi","doi":"10.1109/CSICS.2017.8240423","DOIUrl":null,"url":null,"abstract":"We present recently developed ultra-high bandwidth and low V„ InP-based in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The IQ modulator itself exhibits up to 120-Gbaud rate IQ modulations without optical pre equalization. Furthermore, we examined a low-power dissipation IQ modulator co-assembled with a 495-mW/2ch CMOS differential driver IC, and successfully demonstrated a 64-Gbaud/16QAM operation.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ultra-high bandwidth InP IQ modulators for next generation coherent transmitter\",\"authors\":\"Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, H. Tanobe, S. Nakano, H. Yamazaki, T. Fujii, E. Yamada, N. Nunoya, N. Kikuchi\",\"doi\":\"10.1109/CSICS.2017.8240423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present recently developed ultra-high bandwidth and low V„ InP-based in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The IQ modulator itself exhibits up to 120-Gbaud rate IQ modulations without optical pre equalization. Furthermore, we examined a low-power dissipation IQ modulator co-assembled with a 495-mW/2ch CMOS differential driver IC, and successfully demonstrated a 64-Gbaud/16QAM operation.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240423\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们最近开发了一种基于n-i-p-n异质结构和电容负载行波电极的超高带宽和低V " inp的同相/正交(IQ)调制器。极低的电光损耗结构提高了超过67 GHz的3db电光带宽，而不会降低驱动电压和光损耗等其他性能。IQ调制器本身显示高达120 gbaud率IQ调制没有光学预均衡。此外，我们测试了与495 mw /2ch CMOS差分驱动IC共同组装的低功耗IQ调制器，并成功演示了64-Gbaud/16QAM操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ultra-high bandwidth InP IQ modulators for next generation coherent transmitter

We present recently developed ultra-high bandwidth and low V„ InP-based in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The IQ modulator itself exhibits up to 120-Gbaud rate IQ modulations without optical pre equalization. Furthermore, we examined a low-power dissipation IQ modulator co-assembled with a 495-mW/2ch CMOS differential driver IC, and successfully demonstrated a 64-Gbaud/16QAM operation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量