G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak
{"title":"氧化镓技术及应用","authors":"G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak","doi":"10.1109/CSICS.2017.8240464","DOIUrl":null,"url":null,"abstract":"In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga<inf>2</inf>O<inf>3</inf>. MOSFETs formed by homoepitaxial growth of β-Ga<inf>2</inf>O<inf>3</inf> films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Gallium oxide technologies and applications\",\"authors\":\"G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, S. Tetlak\",\"doi\":\"10.1109/CSICS.2017.8240464\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga<inf>2</inf>O<inf>3</inf>. MOSFETs formed by homoepitaxial growth of β-Ga<inf>2</inf>O<inf>3</inf> films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240464\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Ω·mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.
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