2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)最新文献_第9页

Asymmetric Bragg mirror design for organic microcavity light emitting diodes 有机微腔发光二极管的非对称布拉格反射镜设计

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237259

A. Djurišić, A. Rakić, M. L. Majewski

引用次数: 1

Micro fluxgate sensor using solenoid driving and sensing coils 微磁通门传感器采用电磁驱动和感应线圈

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237236

D. Shim, Hae-Seok Park, K. Na, Wonseo Choi, Jun-sik Hwang, Sang-on Choi

{"title":"Micro fluxgate sensor using solenoid driving and sensing coils","authors":"D. Shim, Hae-Seok Park, K. Na, Wonseo Choi, Jun-sik Hwang, Sang-on Choi","doi":"10.1109/COMMAD.2002.1237236","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237236","url":null,"abstract":"This paper describes a MEMS-based micro-fluxgate magnetic sensor composed of solenoid driving coil, sensing coil and rectangular-ring shaped magnetic core. Solenoid coils and magnetic core were separated by benzocyclobutene (BCB) having high resistivity and good planarization characteristics. To take advantage of low cost, small size and low power consumption, MEMS technology was used to fabricate micro fluxgate sensor. Copper coil with 20 /spl mu/m width and 3.5/spl mu/m thickness was electroplated on Cr (300/spl Aring/)/Au (1500/spl Aring/) films for driving and sensing coils. We designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. Permalloy (NiO/sub 0.8/Fe/sub 0.2/) film with the thickness of 2 /spl mu/m was electroplated under 2000 gauss to induce magnetic anisotropy. The magnetic core had the high DC effective permeability of /spl sim/1,100 and coercivity of /spl sim/0.1 Oe. The fabricated fluxgate sensor had the sensitivity of /spl sim/650 V/T and power consumption of 40 mW at the driving frequency of 2 MHz and the driving voltage of 5 Vp-p.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114151276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

X-ray photoelectron spectroscopy of Al/sub x/Ga/sub 1-x/Sb grown by metalorganic chemical vapour deposition 金属有机化学气相沉积Al/sub -x/ Ga/sub - 1-x/Sb的x射线光电子能谱

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237214

A. H. Ramelan, K. Butcher, E. Goldys

{"title":"X-ray photoelectron spectroscopy of Al/sub x/Ga/sub 1-x/Sb grown by metalorganic chemical vapour deposition","authors":"A. H. Ramelan, K. Butcher, E. Goldys","doi":"10.1109/COMMAD.2002.1237214","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237214","url":null,"abstract":"The extent of oxidation and growth derived oxygen contamination for Al/sub 0.05/Ga/sub 0.95/Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d/sub 5/2/ and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al/sub 2/O/sub 3/, Sb/sub 2/O/sub 2/ and Ga/sub 2/O/sub 5/) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al/sub 0.05/Ga/sub 0.95/Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127233236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Properties of Ga-Zn based mixed oxides for gas sensing applications 气敏应用中Ga-Zn基混合氧化物的性质

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237233

A. Trinchi, K. Galatsis, Y.X. Li, W. Wlodarski, S. Russo, J. du Plesis, B. Rout

引用次数: 1

Recombination via discrete defect levels with application to semiconductor material characterisation 通过离散缺陷水平重组与半导体材料表征的应用

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237261

D. Debuf, R. Corkish

引用次数: 0

Towards a compact model for Schottky-barrier nanotube FETs 肖特基势垒纳米管场效应管的紧凑模型

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237251

L. C. Castro, D. L. John, D. Pulfrey

引用次数: 22

Thick-film doped-oxide deposition processes for applications in planar lightwave circuit fabrication 厚膜掺杂氧化物沉积工艺在平面光波电路制造中的应用

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237285

S. Lee, G. Ditmer, N. Singh, C. Hodson, A. Goodyear, M. Cooke

{"title":"Thick-film doped-oxide deposition processes for applications in planar lightwave circuit fabrication","authors":"S. Lee, G. Ditmer, N. Singh, C. Hodson, A. Goodyear, M. Cooke","doi":"10.1109/COMMAD.2002.1237285","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237285","url":null,"abstract":"Plasma enhanced chemical vapour deposition (PECVD) was used in the development of silica layers for use in planar lightwave circuit fabrication. These high-rate (>200 nm/min) processes are tailored specifically for the thick-film (5/spl sim/15 /spl mu/m) films required for these applications A GeH/sub 4/ addition to the process was used to deposit the core layer, controlling the core-clad refractive index (RI) difference in the range of 0.2%-1.65%. Undoped SiO/sub 2/ and Ge-doped SiO/sub 2/ films up to 10 /spl mu/m have been deposited on to 4\" Si <100> wafers. The 'as deposited' and 'annealed' film properties: film uniformity, RI, RI uniformity and stress have been compared. The upper cladding layer in an optical planar waveguide is typically formed using boron and phosphorus doped films (BPSG) which provides the necessary reflow characteristics. Refractive index uniformity of /spl plusmn/0.0003 across 4\" silicon wafers was achieved on all films after annealing. The core layer was shown to be capable of producing optical losses of <0.1 dB/cm when processed into a waveguide.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130118391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Evaluation of diffusion barrier layers in Cu interconnects 铜互连中扩散势垒层的评价

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237268

K. Prasad, X. Yuan, C. Li, R. Kumar

引用次数: 5

Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes InGaAs/GaAs/AlGaAs高功率脊波导激光二极管无扭结工作的改进

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237180

M. Buda, H. Tan, L. Fu, L. Josyula, C. Jagadish

引用次数: 1

Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs 无杂质无序p型砷化镓中快速扩散器的原子重定位

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI: 10.1109/COMMAD.2002.1237298

V. Coleman, P. Deenapanray, H. Tan, C. Jagadish

引用次数: 0