气敏应用中Ga-Zn基混合氧化物的性质

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237233

A. Trinchi, K. Galatsis, Y.X. Li, W. Wlodarski, S. Russo, J. du Plesis, B. Rout

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引用次数: 1

摘要

采用溶胶-凝胶法制备了镓锌混合金属氧化物，并在氧气环境下进行了测试。这些薄膜沉积在带有数字间电极的氧化铝换能器上用于气敏测量，并沉积在单晶硅衬底上用于微表征。x射线光电子能谱(XPS)和卢瑟福后向散射光谱(RBS)结果表明，在制备的溶液中，Ga-Zn氧化物薄膜中的实际浓度随退火温度的变化而不同于标称值。Zn的浓度随退火温度的升高而降低。结果表明，随着传感器膜中Zn含量的增加，工作温度降低，基极电阻降低。

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Properties of Ga-Zn based mixed oxides for gas sensing applications

Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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