铜互连中扩散势垒层的评价

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237268

K. Prasad, X. Yuan, C. Li, R. Kumar

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引用次数: 5

摘要

在本文中，我们比较了含氧或含氮SiC (SiCO或SiCN)与常规SiN作为封盖层的适用性，以防止Cu扩散到典型的Cu基互连结构中的层间介电层(ILD)。除了降低势垒的介电常数(k)值外，SiCN和SiCO在阻止Cu扩散以及提供良好的介电击穿强度方面表现出相当的性能。

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Evaluation of diffusion barrier layers in Cu interconnects

In this paper, we compare the experimental results on the suitability of oxygen or nitrogen containing SiC (SiCO or SiCN) with conventional SiN as a capping layer to prevent Cu diffusion into interlevel dielectric (ILD) layer in a typical Cu based interconnect structure. In addition to reducing the dielectric constant (k) value of the barrier, SiCN and SiCO show comparable performance in terms of preventing the Cu diffusion as well as offering good dielectric breakdown strength.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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