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2012 International Conference on Optoelectronics and Microelectronics最新文献

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Study on the characteristics of VCSEL with new electrode structure 新型电极结构的VCSEL特性研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316221
Peng Li, Li Xu, Yuan Feng, Xiaomao Song, Jianwei Shi, Yun Deng, Chunyu Tian, Y. Hao, Ying-jie Zhao, C. Yan
{"title":"Study on the characteristics of VCSEL with new electrode structure","authors":"Peng Li, Li Xu, Yuan Feng, Xiaomao Song, Jianwei Shi, Yun Deng, Chunyu Tian, Y. Hao, Ying-jie Zhao, C. Yan","doi":"10.1109/ICOOM.2012.6316221","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316221","url":null,"abstract":"The traditional VCSEL has the problem of uneven current injection. In order to solve this problem, we designed a new electrode structure. Then we used ANSYS to simulate the thermal characteristics of VCSEL. The results showed that VCSEL with the new electrode structure had a better cooling effect than the traditional electrode structure.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114333641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of high-performance fourth-order single-loop sigma-delta modulator for inertial sensor 用于惯性传感器的高性能四阶单回路sigma-delta调制器设计
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316315
Q. Fu, Jian Yang, Liang Liu, P. Wang, Weiping Chen, Xiaowei Liu
{"title":"Design of high-performance fourth-order single-loop sigma-delta modulator for inertial sensor","authors":"Q. Fu, Jian Yang, Liang Liu, P. Wang, Weiping Chen, Xiaowei Liu","doi":"10.1109/ICOOM.2012.6316315","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316315","url":null,"abstract":"In this paper, a design of high-performance fourth-order single-loop modulator applied in inertial sensor is described. This design employs the structure of feed-forward summation to reduce the output of the integrators and make the system more stable. Meanwhile, the modulator uses local feedback for zero optimization to improve the shaping capacity of the modulator noise within the signal bandwidth. In this sigma delta modulator, over-sampling rate is 256 and the signal bandwidth is 500 Hz, while sampling clock frequency is 250 KHz. By the Simulink simulation of MATLAB, the SNR is 145.6 dB and the Effective Number of Bits is 23.89. Transistorlevel circuit can be realized by single-end switched-capacitor circuits. A operational amplifier in the modulator, a dynamic comparator and a clock generation circuit are designed. The modulator has been implemented in CMOS 0.6 μm process and simulated in Cadence. Transistor-level circuit simulation result shows that SNR is 126.6 dB, the Effective Number of Bits is 20.7, and nonlinearity of the single-end circuit generates circuit harmonic.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115117509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on neutral sulphur passivation of gallium antimonide surface 锑化镓表面中性硫钝化的研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316207
Ning An, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Xian Gao, Y. Zou, Mei Li, Xiao-hui Ma
{"title":"Study on neutral sulphur passivation of gallium antimonide surface","authors":"Ning An, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Xian Gao, Y. Zou, Mei Li, Xiao-hui Ma","doi":"10.1109/ICOOM.2012.6316207","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316207","url":null,"abstract":"We here report a new passivation method, with neutral sulphur, (NH4)2S, to modify the GaSb surface. The optical and chemical properties of GaSb surface before and after neutral passivation are investigated using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) mapping. Neutral (NH4)2S passivation led to 20 times enhancement in photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than the untreated sample. The passivtion effect results from the significant reduction in surface states due to the formation of Ga and Sb sulfide species. Compared to the regular alkaline (NH4)2S treatment, surface passivation intensity and homogeneity are both improved. Our studies also indicate the neutral sulphur passivation treated surface is much more stable in air for at least 48h.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116224306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study on heat sink and solder of C-Mount packaged semiconductor laser C-Mount封装半导体激光器的散热器及焊料研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316218
Daoming Xi, Y. Zou, Xiao-hui Ma, Yang Li, Zibin Yang, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang
{"title":"Study on heat sink and solder of C-Mount packaged semiconductor laser","authors":"Daoming Xi, Y. Zou, Xiao-hui Ma, Yang Li, Zibin Yang, Li Xu, Wei Zhao, Qingxue Sui, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316218","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316218","url":null,"abstract":"The selection of semiconductor laser package materials including heat sink and solder has an important impact to the cooling and life of the laser, and thus performing related studies is very important. A C-Mount package semiconductor laser model was established in this paper, and thermal characteristic of different kinds of heat sink materials was simulated by the finite element software ANSYS. The temperature distribution of semiconductor laser was subsequently simulated. Then Cu was selected as heat sink, and In or AuSn was used as a solder, and the thermal stress distribution and thermal deformation of different solder materials were analyzed. The distribution of thermal stress of the semiconductor laser has also been investigated.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132987531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real-time moving object tracking in video 视频中实时运动物体跟踪
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316342
A. M. Kodjo, Yang Jinhua
{"title":"Real-time moving object tracking in video","authors":"A. M. Kodjo, Yang Jinhua","doi":"10.1109/ICOOM.2012.6316342","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316342","url":null,"abstract":"Identifying moving objects from a video sequence is a fundamental and critical task in many computer vision applications. After the images are captured they must be processed and then sent to the server. This paper describes an implementation of a real time object tracking system in a video. Real tracking is achieved using a simple and fast motion detection method based on frame substation. The image processing algorithm is explained. Experimental results shown that any kind of moving object can be detected under unconstrained scenes.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123454616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Scattering of resonant radiation in an expanding sphere 膨胀球体中的共振辐射散射
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316286
N. Shaparev
{"title":"Scattering of resonant radiation in an expanding sphere","authors":"N. Shaparev","doi":"10.1109/ICOOM.2012.6316286","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316286","url":null,"abstract":"The radiative transfer in a freely expanding gaseous sphere, illuminated by external radiation, has been studied numerically. The absorption coefficient, spectral and spatial characteristics of the absorbed and scattered radiation, the radial dependences of excited atomic concentration have been determined, the influence of the optical thickness and the atomic radial expansion velocity on them have been investigated.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126003150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated structure-control simulation method for fast steering mirror system 快速转向后视镜系统结构控制集成仿真方法
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316314
Yafei Lu, D. Fan, Zhiyong Zhang
{"title":"Integrated structure-control simulation method for fast steering mirror system","authors":"Yafei Lu, D. Fan, Zhiyong Zhang","doi":"10.1109/ICOOM.2012.6316314","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316314","url":null,"abstract":"An integrated structure-control simulation method (ISCS) was developed in this paper to enable designer to better assess the final control performance in the design study phase for a two-axis fast steering mirror (FSM) system. Basic idea of ISCS method and principle of FSM were introduced and proceeding of ISCS method was conduced in detail for a given two-axis FSM. Experimental results impacted the general validity of the work or concept presented in this paper.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of PDMS microfluidic chip used in Ultraviolet integrated biological chip 紫外集成生物芯片中PDMS微流控芯片的研制
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316336
Shuai Yu, Y. Qu, Te Li, Zhibin Zhao, Hao Yang, Lei Liu, C. Tian, Donghan Wei
{"title":"Fabrication of PDMS microfluidic chip used in Ultraviolet integrated biological chip","authors":"Shuai Yu, Y. Qu, Te Li, Zhibin Zhao, Hao Yang, Lei Liu, C. Tian, Donghan Wei","doi":"10.1109/ICOOM.2012.6316336","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316336","url":null,"abstract":"Use polydimethylsiloxane(PDMS) fabricate a microfluidic chip as the sample channel in Ultraviolet integrated biological chip, By re-molding method using the PDMS of the ratio of matrix and curing agent is 10:1 fabricate the substrate of microfluidic chip, using the PDMS of the ratio of matrix and curing agent is 5:1 fabricate the cover sheet and complete the seal of the microfluidic chip. Fabricate the microfluidic chip with the channel width is 100μm, 50μm, 1mm and 2mm.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124211230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure 构建电解质/硅太阳能电池结构的单场效应表面钝化研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316302
W. Liu, J. Guan, J. Bian, Y. Zhao, Y. H. Liu, B. Zhang, A. Liu
{"title":"Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure","authors":"W. Liu, J. Guan, J. Bian, Y. Zhao, Y. H. Liu, B. Zhang, A. Liu","doi":"10.1109/ICOOM.2012.6316302","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316302","url":null,"abstract":"The electrolyte/Si solar cell structure is proposed to investigate single field-effect surface passivation. The electrolyte-induced extra electrostatic field under the surface of Si solar cell can be controlled by adjusting voltages between the electrolyte and the surfaces of Si solar cell. Under positive gate voltages, an electron accumulation layer was formed under the electrolyte/Si interface leading to surface passivation of Si solar cell. Our results indicate that the proposed electrolyte/Si solar cell structure made it feasible to investigate single field-effect surface passivation because other interference factor could be eliminated, such as interfacial stress, surface defects and inter diffusion. With single field-effect surface passivation scheme, an increment in short-circuit current of Si solar cell from 6.1 mA to 6.37 mA was achieved.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130082547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coupling characteristic of tapered optical fiber based on ZEMAX 基于ZEMAX的锥形光纤耦合特性研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316219
Peng Fu, Y. Zou, Ling Wang, Fei Yu, Jie Li, Henan Chen, Xiao-hui Ma, Qingxue Sui, Wei Zhao, Zhimin Zhang
{"title":"Coupling characteristic of tapered optical fiber based on ZEMAX","authors":"Peng Fu, Y. Zou, Ling Wang, Fei Yu, Jie Li, Henan Chen, Xiao-hui Ma, Qingxue Sui, Wei Zhao, Zhimin Zhang","doi":"10.1109/ICOOM.2012.6316219","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316219","url":null,"abstract":"The coupling application of tapered optical fiber and semiconductor laser has great practical value. The beam shaping effect of the tapered area is analyzed based on the principle of geometrical optics. The coupling model of the semiconductor laser and the tapered fiber is built with ZEMAX. The influence of the coupling efficiency caused by the different working distance between the source and the tapered fiber tip, and the variation of the end diameter of the tapered fiber are explored. The results are researched by the practical experiment.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126441008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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