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2012 International Conference on Optoelectronics and Microelectronics最新文献

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An aerial camera focusing system of wide range and high dynamic 一种大范围、高动态的航空相机对焦系统
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316269
Junfeng Zhang, S. Tong, Yanyu Dong, Han Yang, Xin Hu
{"title":"An aerial camera focusing system of wide range and high dynamic","authors":"Junfeng Zhang, S. Tong, Yanyu Dong, Han Yang, Xin Hu","doi":"10.1109/ICOOM.2012.6316269","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316269","url":null,"abstract":"According to the project, this paper introduces an aerial camera focusing system. The system uses the screw to achieve horizontal movement of the lens, and turn the actuator. The connection of the system is coaxial connector, which can avoid the error of the gear mechanism. It is going to use Kepler telescope optical system to get larger divergence angle changes with smaller stroke of lens. When the system is working, we only need to control the space of the focus optical system to complete focusing. The system completes wide range and high dynamic focal length adjustment finally by modifying the transfer function and control parameters constantly. Comparing with the traditional methods of focus length adjustment, the system solves the problem of small adjustment range, poor dynamic characteristics, poor linearity and multi-level cascade, at the same time, the system has a simple structure, high stability, low cost of manufacture. We show the conclusions getting from the data.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115894358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the noise suppression of Brillouin amplification for weak Stokes signals 弱Stokes信号布里渊放大噪声抑制研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316259
Weiming He, Hongbo Liu, W. Hasi, Zhiwei Lu
{"title":"Investigation on the noise suppression of Brillouin amplification for weak Stokes signals","authors":"Weiming He, Hongbo Liu, W. Hasi, Zhiwei Lu","doi":"10.1109/ICOOM.2012.6316259","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316259","url":null,"abstract":"For weak Stokes Brillouin amplification, the speckle noise of the amplified spontaneous Brillouin scattering (ABS) of pump laser limits the signal to noise ratio (SNR). This paper introduces the design of a double signal Brillouin amplification scheme, it can improve the SNR for weak signal Brillouin amplification. The experimental results show that the non-collinear strong Stokes Brillouin amplification can reduce ABS noise by more than two orders of magnitude, the collinear weak Stokes signal optical magnification decreases only one order of magnitude, nJ collinear weak signal can still get 105 magnification. Double signal Brillouin amplification scheme can substantially in the amplified signal, at the same time, can effectively improve the optical SNR, and improve the reliability of signal measurement.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117065790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radius selection method for point-based data integration in 3D model reconstruction from ladar range images 基于点数据集成的雷达距离图像三维模型重建的半径选择方法
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316253
Lv Dan, Sun Jianfeng, Li Qi, Wang Qi
{"title":"Radius selection method for point-based data integration in 3D model reconstruction from ladar range images","authors":"Lv Dan, Sun Jianfeng, Li Qi, Wang Qi","doi":"10.1109/ICOOM.2012.6316253","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316253","url":null,"abstract":"A method called local point density approach is presented for solving the difficulty of radius selection for point-based data integration in 3D model reconstruction by Ladar (laser radar) range images. After data integration, a set of points is properly selected for point density computing by setting the radius with different values. An optimal radius can be obtained when the variance of the point density is minimum. The algorithm is easy to adopt. The experimental results demonstrate the efficiency of the proposed approach.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115260663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation and analysis of 980nm intracavity-contacted VCSEL 980nm腔内接触VCSEL仿真与分析
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316234
L. Wan, Yuan Feng, Peng Xu, G. Jin, Ying-jie Zhao, Yusi Zhao
{"title":"Simulation and analysis of 980nm intracavity-contacted VCSEL","authors":"L. Wan, Yuan Feng, Peng Xu, G. Jin, Ying-jie Zhao, Yusi Zhao","doi":"10.1109/ICOOM.2012.6316234","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316234","url":null,"abstract":"In this paper, optical and electrical properties of the traditional and intracavity-contacted structures of 980nm VCSELs were simulated in the case of the same epitaxial growth by Crosslight PICS3D. Threshold current of the traditional structure device was 8.76mA and the one of intracavity-contacted structure device was 6.23mA. When operating current was 25 mA, the output power of the traditional structure device was 5.6mW and the one of intracavity-contacted structure device was 7mW. Compared with the traditional structure, the threshold current of intracavity-contacted structure device was reduced by 2.53mA, the output power was increased to 1.25 times, optical and electrical properties of the device were improved.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123329121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD 锑环境对MOCVD生长在GaAs衬底上的GaSb薄膜界面错配位错阵列的影响
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316202
Jie Wu, Shaobin Liu, Wei Zhou, Wu Tang, K. Lau
{"title":"Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD","authors":"Jie Wu, Shaobin Liu, Wei Zhou, Wu Tang, K. Lau","doi":"10.1109/ICOOM.2012.6316202","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316202","url":null,"abstract":"The crystal quality and structural properties of GaSb thin films grown on a semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using triethylgallium and trimethylantimony were characterized by high-resolution X-ray diffraction and high-resolution transmission electron microscopy. The nucleation of the interfacial misfit dislocations (IMF) array in the GaSb/GaAs interface, which is dependent on the antimony ambience, was investigated by varying the V/III ratio. Our experiment results showed that the IMF array and threading dislocation density are modified in the GaSb epilayer with different antimony ambiences. The GaSb thin film grown by the IMF mode on GaAs was confirmed under our optimal growth condition, and the hole density and mobility of GaSb thin films were found to be 5.27 × 1016 cm-3 (1.20 × 1016) and 553 cm2/V-s (2340) at RT (77 K) from Hall measurements. We suggest that the IMF growth mode can also be applied to fabricate the GaSb film on GaAs by MOCVD for application in microelectronic devices.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128273816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of LDMOS for effect of finger and device-width on gate feedback charge LDMOS手指和器件宽度对栅极反馈电荷的影响分析
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316329
P. S. Permata, M. S. Anwar, M. Siddiqui, Shao-Ming Yang, J. Tsai, G. Sheu
{"title":"Analysis of LDMOS for effect of finger and device-width on gate feedback charge","authors":"P. S. Permata, M. S. Anwar, M. Siddiqui, Shao-Ming Yang, J. Tsai, G. Sheu","doi":"10.1109/ICOOM.2012.6316329","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316329","url":null,"abstract":"In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device's power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116604557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on characteristics of CU substrate giant magnetostrictive thin film based in the direction of hard magnetization axis 基于硬磁化轴方向的CU基超磁致伸缩薄膜特性研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316306
Fuji Wang, Zhenyuan Jia, W. Liu
{"title":"Study on characteristics of CU substrate giant magnetostrictive thin film based in the direction of hard magnetization axis","authors":"Fuji Wang, Zhenyuan Jia, W. Liu","doi":"10.1109/ICOOM.2012.6316306","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316306","url":null,"abstract":"High driving frequency of magnetic field is one of the key factors which restrict the popularization and application of giant magnetostrictive thin film device. The research on how to reduce the magnetic field driving frequency of giant magnetostrictive thin film device has great significance to the popularization and application of this kind of device. In this paper, the fundamental reason which causes giant magnetostrictive thin film existing anisotropy is analyzed deeply. Based on this, combining with the motion mechanism of magnetic domains in the magnetostriction process of thin film, a new idea that as long as it is able to overcome the demagnetizing field existing in giant magnetostrictive thin film, better dynamic characteristics can be obtained in the direction of hard magnetization axis under the action of magnetic field with low driving frequency is proposed. An experimental system of giant magnetostrictive film is established and an experiment is carried out in the system. The results show that demagnetizing field can be overcome through applying an appropriate bias magnetic field, and thin film may generate excellent superharmonic resonance in hard magnetization axis direction. The experimental results provide a new way for the development of giant magnetostrictive thin film device with low driving frequency.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121340056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The high sensitivity gaseous hydrocarbon sensing device based on the improved signal processing circuit 基于改进信号处理电路的高灵敏度气态烃传感装置
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316313
Chaofan Lin, Weixi Wang, Zhihao Zhu
{"title":"The high sensitivity gaseous hydrocarbon sensing device based on the improved signal processing circuit","authors":"Chaofan Lin, Weixi Wang, Zhihao Zhu","doi":"10.1109/ICOOM.2012.6316313","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316313","url":null,"abstract":"In order to improve the gas sensitivity, selectivity and the expansion of the gas detection components, we presents a kind of gaseous hydrocarbon sensor with optimization electronic circuit which is able to be easily carried and have a high sensitivity. The system obtained by gas acquisition and processing module and the gas sensor feedback signal to the electronic circuit processing module, then accurately display data to the computer. The sensor can directly measure the quantities of the gaseous hydrocarbon in the sample. The detection limit is 10-10g. It not only can be used to explore the gas and oil in sea, but also can be used to test the other over-trace gas.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129593521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on the transmission characteristic of angle tuning F-P etalon 角度调谐F-P标准子的传输特性研究
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316245
D. Ren, Zhenlei Chen, Jun Du, W. Zhao, Y. Qu
{"title":"Research on the transmission characteristic of angle tuning F-P etalon","authors":"D. Ren, Zhenlei Chen, Jun Du, W. Zhao, Y. Qu","doi":"10.1109/ICOOM.2012.6316245","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316245","url":null,"abstract":"The dualistic transmission model of F-P etalon for angle and frequency has been built to analysis and build the relationship of transmission variation with angle and frequency. In the experiment, the transmission variations with frequency under different angles have been researched with the frequency rapid tunable fiber laser to gain the peak transmission, full width at half height, and relative sensitivity of transmission spectra. By comparing the experimental results and theory analysis, the uniformity of above parameters has been proved. The result of this paper can be used to design F-P etalon.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130906595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin 用于检测NAPDH和核黄素光致发光的Si PIN二极管
2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI: 10.1109/ICOOM.2012.6316337
Hao Yang, Y. Qu, Te Li, Zhibin Zhao, Shuai Yu, Lei Liu, C. Tian, Donghan Wei
{"title":"Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin","authors":"Hao Yang, Y. Qu, Te Li, Zhibin Zhao, Shuai Yu, Lei Liu, C. Tian, Donghan Wei","doi":"10.1109/ICOOM.2012.6316337","DOIUrl":"https://doi.org/10.1109/ICOOM.2012.6316337","url":null,"abstract":"In some emergency situation such as to Detect Contamination biochemistry. There is a need for utilizing Si PIN diodes to detect the photoluminescence of NAPDH (nicotinamide adenine dinucleotide) and riboflavin. NAPDH has a absorption peak at about 340nm and emission fluorescence at about 460nm. And riboflavin has a absorption peak at about 385nm and emission fluorescence at about 510nm. This paper is currently investigating the feasibility of using silicon PIN photodiodes to detecting photoluminescence of NAPDH and riboflavin. To screening the uv ray which will to interference the detecting the fluorescence we were growth a 6H-SiC layer by magnetron sputtering.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133814979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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