Hao Yang, Y. Qu, Te Li, Zhibin Zhao, Shuai Yu, Lei Liu, C. Tian, Donghan Wei
{"title":"用于检测NAPDH和核黄素光致发光的Si PIN二极管","authors":"Hao Yang, Y. Qu, Te Li, Zhibin Zhao, Shuai Yu, Lei Liu, C. Tian, Donghan Wei","doi":"10.1109/ICOOM.2012.6316337","DOIUrl":null,"url":null,"abstract":"In some emergency situation such as to Detect Contamination biochemistry. There is a need for utilizing Si PIN diodes to detect the photoluminescence of NAPDH (nicotinamide adenine dinucleotide) and riboflavin. NAPDH has a absorption peak at about 340nm and emission fluorescence at about 460nm. And riboflavin has a absorption peak at about 385nm and emission fluorescence at about 510nm. This paper is currently investigating the feasibility of using silicon PIN photodiodes to detecting photoluminescence of NAPDH and riboflavin. To screening the uv ray which will to interference the detecting the fluorescence we were growth a 6H-SiC layer by magnetron sputtering.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin\",\"authors\":\"Hao Yang, Y. Qu, Te Li, Zhibin Zhao, Shuai Yu, Lei Liu, C. Tian, Donghan Wei\",\"doi\":\"10.1109/ICOOM.2012.6316337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In some emergency situation such as to Detect Contamination biochemistry. There is a need for utilizing Si PIN diodes to detect the photoluminescence of NAPDH (nicotinamide adenine dinucleotide) and riboflavin. NAPDH has a absorption peak at about 340nm and emission fluorescence at about 460nm. And riboflavin has a absorption peak at about 385nm and emission fluorescence at about 510nm. This paper is currently investigating the feasibility of using silicon PIN photodiodes to detecting photoluminescence of NAPDH and riboflavin. To screening the uv ray which will to interference the detecting the fluorescence we were growth a 6H-SiC layer by magnetron sputtering.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin
In some emergency situation such as to Detect Contamination biochemistry. There is a need for utilizing Si PIN diodes to detect the photoluminescence of NAPDH (nicotinamide adenine dinucleotide) and riboflavin. NAPDH has a absorption peak at about 340nm and emission fluorescence at about 460nm. And riboflavin has a absorption peak at about 385nm and emission fluorescence at about 510nm. This paper is currently investigating the feasibility of using silicon PIN photodiodes to detecting photoluminescence of NAPDH and riboflavin. To screening the uv ray which will to interference the detecting the fluorescence we were growth a 6H-SiC layer by magnetron sputtering.