LDMOS手指和器件宽度对栅极反馈电荷的影响分析

P. S. Permata, M. S. Anwar, M. Siddiqui, Shao-Ming Yang, J. Tsai, G. Sheu
{"title":"LDMOS手指和器件宽度对栅极反馈电荷的影响分析","authors":"P. S. Permata, M. S. Anwar, M. Siddiqui, Shao-Ming Yang, J. Tsai, G. Sheu","doi":"10.1109/ICOOM.2012.6316329","DOIUrl":null,"url":null,"abstract":"In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device's power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of LDMOS for effect of finger and device-width on gate feedback charge\",\"authors\":\"P. S. Permata, M. S. Anwar, M. Siddiqui, Shao-Ming Yang, J. Tsai, G. Sheu\",\"doi\":\"10.1109/ICOOM.2012.6316329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device's power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文通过栅极电荷测试电路仿真,模拟分析了手指、器件宽度和主电源(Vdd)对LDMOS栅极反馈电荷(Qgd)和开关时间的影响。栅极反馈电荷是填充栅极漏极“米勒”电容所需的电荷。面积越小,电荷和开关时间越短。在我们的模拟中可以看到,栅极反馈电荷(Qgd)和开关时间随着器件宽度的增加而线性增加,而不是没有。手指和主电源(Vdd)。我们成功地模拟了通过增加面积来提高器件的功率,多指设计优于宽度扩展,因为栅极反馈电荷更低,开关时间更快。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of LDMOS for effect of finger and device-width on gate feedback charge
In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device's power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.
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