Simulation and analysis of 980nm intracavity-contacted VCSEL

Abstract

In this paper, optical and electrical properties of the traditional and intracavity-contacted structures of 980nm VCSELs were simulated in the case of the same epitaxial growth by Crosslight PICS3D. Threshold current of the traditional structure device was 8.76mA and the one of intracavity-contacted structure device was 6.23mA. When operating current was 25 mA, the output power of the traditional structure device was 5.6mW and the one of intracavity-contacted structure device was 7mW. Compared with the traditional structure, the threshold current of intracavity-contacted structure device was reduced by 2.53mA, the output power was increased to 1.25 times, optical and electrical properties of the device were improved.