Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献_第2页

Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy 利用分子束外延生长的掺杂碳受体峰的GaAs平面掺杂势垒探测二极管的性能和可靠性特性

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303102

R. Malik, Y. Anand, M. Micovic, M. Geva, R. Ryan

引用次数: 0

High speed monolithically integrated pin-MODFET transimpedance photoreceivers 高速单片集成引脚modfet跨阻光电接收机

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303111

A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock

引用次数: 0

Broadband optoelectronic wafer probing 宽带光电晶圆探测

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303122

M. Feuer, S. Shunk, P.R. Smith, H. H. Law, C. Burrus, M. Nuss

{"title":"Broadband optoelectronic wafer probing","authors":"M. Feuer, S. Shunk, P.R. Smith, H. H. Law, C. Burrus, M. Nuss","doi":"10.1109/CORNEL.1993.303122","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303122","url":null,"abstract":"Optoelectronic S-parameter measurements offer the bandwidth needed to characterize today's state-of-the-art transistors, but have not yet achieved the throughput or accuracy provided by a vector network analyzer with microwave probes. In this paper, we discuss a new approach in which movable optoelectronic probes, calibrated by testing simple standard devices, are stepped around the wafer to provide accurate, high-throughput S-parameter measurements. Sub-picosecond laser pulses drive photoconductive switches on the probe tips, to generate electrical stimulus pulses and define sampling intervals, and signals are transferred to and from the wafer under test by coplanar waveguide transmission lines and plated contact bumps. The probes provide electrical pulses as short as 3 psec (FWHM), while maintaining a broadband 50 ohm termination to ensure stability of the device under test. Since probe flexure under contact significantly disturbs alignment of free-space beams, fiber-optic input is used to improve reproducibility. Analysis by vector error correction in the frequency domain removes systematic errors and separates the incident and reflected pulses without subjective time-window gating. We have demonstrated precise measurement of the complex reflection coefficient S/sub 11/ at frequencies up to 175 GHz. Noise simulations have been performed to investigate the effect of various system parameters on the measurement uncertainty and useful bandwidth for S-parameter tests.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122202141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Millimeter-wave network analysis using nonlinear transmission lines 用非线性传输线分析毫米波网络

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303061

M. Rodwell, R. Yu, M. Reddy, J. Pusl, S. Allen, M. Case, U. Bhattacharya

引用次数: 1

Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz 频率在100ghz以上的GaAs TUNNETT和MITATT设备的结构和仿真

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303087

Chien-Chung Chen, R. Mains, G. Haddad, H. Eisele

{"title":"Structure and simulation of GaAs TUNNETT and MITATT devices for frequencies above 100 GHz","authors":"Chien-Chung Chen, R. Mains, G. Haddad, H. Eisele","doi":"10.1109/CORNEL.1993.303087","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303087","url":null,"abstract":"A numerical simulation program for two-terminal transit-time devices based on the energy-momentum transport model, with valence band to conduction band tunneling phenomena incorporated, has been developed. This program can deliver accurate TUNNETT and MITATT device simulation results in the millimeter and submillimeter range, and therefore provides a useful tool for high frequency device structure design and optimization. Simulation results for GaAs TUNNETT and MITATT devices for frequencies above 100 GHz are presented. As simulation results show, the negative resistance of the device decreases rapidly as the operating frequency increases. Under such circumstances, the contact resistance severely degrades the device's RF performance. When a diode's negative resistance becomes lower than the contact resistance, no RF power can be generated. To overcome this difficulty, device structures using no ohmic contacts are investigated. In these devices, ohmic contacts are replaced by Schottky contacts, and also p-n junctions are replaced by Schottky junctions for single-drift structures. Since the metal-semiconductor contact resistance is eliminated or greatly reduced in such devices, they are very promising as RF power sources at extremely high frequencies.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2020 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133161068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

High temperature operation of n-type 6H-SiC and p-type diamond MESFETs n型6H-SiC和p型金刚石mesfet的高温工作

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303116

M. Shin, G. Bilbro, R. Trew

引用次数: 5

InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE) 化学束外延生长高击穿电压InAlAs/InGaAs(P)双异质结双极晶体管

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303069

J. Cowles, W. Chen, G. Munns, G. Haddad

引用次数: 1

p/sup +/-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As and Ga/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As MODFETs p/sup +/-薄表面层肖特基势垒增强高速伪晶Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As和Ga/sub 0.5/In/sub 0.5/ p/ In/sub 0.15/Ga/sub 0.85/As modfet

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303127

J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser

引用次数: 0

High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors 自对准InGaP/GaAs异质结双极晶体管的高微波功率性能

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303067

L.W. Yang, S. Fu, B. Clark, R.S. Brozovich, H. Lin, S. Liu, P. Chao, F. Ren, C. Abernathy, S. Pearton, J. Lothian, P. Wisk, T.R. Fullowan, T. Chiu, S. Pei

{"title":"High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors","authors":"L.W. Yang, S. Fu, B. Clark, R.S. Brozovich, H. Lin, S. Liu, P. Chao, F. Ren, C. Abernathy, S. Pearton, J. Lothian, P. Wisk, T.R. Fullowan, T. Chiu, S. Pei","doi":"10.1109/CORNEL.1993.303067","DOIUrl":"https://doi.org/10.1109/CORNEL.1993.303067","url":null,"abstract":"The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process technology have shown excellent device characteristics with low collector offset voltage (<150 mV) and low knee voltage (<0.7 V), and excellent high-frequency responses well into the millimeter-wave range. The FET-like device topology provides a means to preserve the power gain in device scaling for large emitter area. At X-band (10 GHz), an 8-cell common-base (CB) power transistor with emitter area of 240 /spl mu/m/sup 2/ demonstrated 17.2-17.5 dB gain. The 12-cell (360 /spl mu/m/sup 2/) common-emitter (CE) HBTs with a breakdown voltage (BV/sub ceo/) of 11 V delivered 0.53 W output power with 57% power added efficiency (P.A.E.) and 11.3 dB power gain at 4 GHz. Peak power of 0.68 W, P.A.E. of 52%, and 10.3 dB power gain also was achieved at a collector current density of 5.5/spl times/10/sup 4/ A/cm/sup 2/.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125175237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Quasi-optical frequency conversion arrays 准光变频阵列

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI: 10.1109/CORNEL.1993.303121

R. York, Rajeev J Ram

引用次数: 0